Abstract: A semiconductor package device includes a first dielectric layer, a first interconnection layer, a second interconnection layer, and a second dielectric layer. The first dielectric layer has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The first interconnection layer is within the first dielectric layer. The second interconnection layer is on the second surface of the first dielectric layer and extends from the second surface of the first dielectric layer into the first dielectric layer to electrically connect to the first interconnection layer. The second dielectric layer covers the second surface and the lateral surface of the first dielectric layer and the second interconnection layer.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: A memory device is described. Generally, the device includes a string of memory transistors, a source select transistor coupled to a first end of the string of memory transistor and a drain select transistor coupled to a second end of the string of memory transistor. Each memory transistor includes a gate electrode formed adjacent to a charge trapping layer and there is neither a source nor a drain junction between adjacent pairs of memory transistors or between the memory transistors and source select transistor or drain select transistor. In one embodiment, the memory transistors are spaced apart from adjacent memory transistors and the source select transistor and drain select transistor, such that channels are formed therebetween based on a gate fringing effect associated with the memory transistors. Other embodiments are also described.

Abstract: A method for treating wastewater containing ertriazole compounds is provided. Hypochlorous acid (HOCl) having a neutral to slightly acidic pH value is added to the wastewater containing triazole compounds for reaction, thereby effectively reacting more than 90% of triazole compounds.

Abstract: An anti-torque safety hook includes a main body, a gate member, and a detent member. The main body has a hook opening passing through the front and back sides thereof, a passage communicating to the right side of the hook opening, a female buckle arranged on the passage, a connection unit arranged below the hook opening, and an energy absorption area arranged on the left side of the hook opening. The gate member has a first end mounted on the main body and a second end comprising a male buckle, adapted for detachably coupled with the female buckle, so as to allow the gate member to open and close the passage. The detent member is coupled on the main body and maintained at a first position, so as for ensuring that the gate member closes the passage, while when the detent member is operated and switched to a second position, the safety is disarmed. The present invention mainly utilizes the detent member to ensure the gate member to close the passage.

Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.

Abstract: An integrated circuit is provided. The integrated circuit includes a three-dimensional memory device, a first word line driving circuit and a second word line driving circuit. The three-dimensional memory device includes stacking structures separately extending along a column direction. Each stacking structure includes a stack of word lines. The stacking structures have first staircase structures at a first side and second staircase structures at a second side. The word lines extend to steps of the first and second staircase structures. The first and second word line driving circuits lie below the three-dimensional memory device, and extend along the first and second sides, respectively. Some of the word lines in each stacking structure are routed to the first word line driving circuit from a first staircase structure, and others of the word lines in each stacking structure are routed to the second word line driving circuit from a second staircase structure.

Abstract: A memory device is provided, including a memory array, a driver circuit, and recover circuit. The memory array includes multiple memory cells. Each memory cell is coupled to a control line, a data line, and a source line and, during a normal operation, is configured to receive first and second voltage signals. The driver circuit is configured to output at least one of the first voltage signal or the second voltage signal to the memory cells. The recover circuit is configured to output, during a recover operation, a third voltage signal, through the driver circuit to at least one of the memory cells. The third voltage signal is configured to have a first voltage level that is higher than a highest level of the first voltage signal or the second voltage signal, or lower than a lowest level of the first voltage signal or the second voltage signal.

Abstract: A functional assembly disposed on a display device is provided. The display device has a display surface. The functional assembly includes a first bracket disposed on a back surface of the display device, a second bracket pivotally connected to the one end of the first bracket and rotatable with respect to the first rotation shaft, and a base pivotally connected to the one end of the second bracket and rotatable with respect to the second rotation shaft. One end of the first bracket has a first rotation shaft. One end of the second bracket has a second rotation shaft. One of the first and second rotation shafts is perpendicular to the display surface, and the other one is parallel to the display surface. The base can be shielded from the back surface of the display device and can be exposed on the one side of the display device.

Abstract: A ceramic dielectric band-pass filter includes a ceramic base, a first input and output electrode, and a second input and output electrode. The ceramic base includes an open surface, a short-circuit surface, and an IO surface. The ceramic base includes first resonant cavities and second resonant cavities penetrating the ceramic base. The first resonant cavities are arranged between the second resonant cavities and are arranged along a length direction of the ceramic base. The first input and output electrode and the second input and output electrode are arranged on the IO surface and extend to the open surface. The first input and output electrode, the second input and output electrode, and the first resonant cavities are coupled to form a sixth-order band-pass filter. The first input and output electrode and the second input and output electrode are coupled with the second resonant cavities to form notch filters.

Abstract: A camera assembly adaptable to a display device is provided. The camera assembly comprises a fixed base, a lifting component, an elastic element and a camera module. The fixed base is disposed in the display device and fixed with the display device. The lifting component is movably connected to the fixed base. The elastic element is connected with the lifting component and the fixed base respectively. The camera module is pivotally connected to the lifting component. The elastic element provides elastic force to drive the lifting component to raise the camera module so that the camera module is exposed from the display device, and the camera module pivots relative to the lifting component to tilt the display device.

Abstract: An anti-torque safety hook includes a main body, a gate member, and a detent member. The main body has a hook opening passing through the front and back sides thereof, a passage communicating to the right side of the hook opening, a female buckle arranged on the passage, a connection unit arranged below the hook opening, and an energy absorption area arranged on the left side of the hook opening. The gate member has a first end mounted on the main body and a second end comprising a male buckle, adapted for detachably coupled with the female buckle, so as to allow the gate member to open and close the passage. The detent member is coupled on the main body and maintained at a first position, so as for ensuring that the gate member closes the passage, while when the detent member is operated and switched to a second position, the safety is disarmed. The present invention mainly utilizes the detent member to ensure the gate member to close the passage.

Abstract: A temporary horizontal lifeline device includes a main frame, a central shaft pivotally arranged on the main frame, a drum and an external gear affixed on the central shaft, a spanner adapted for driving the central shaft to rotate, and a cable member winded around the drum. A gear groove is arranged on the periphery of the external gear. A first spring is arranged on the main frame so as to provide a force to enable the drum to retrieve the cable member. The main frame also comprises a brake element and a detent provided thereon. The brake element has a first state for restrict the gear groove and a second state for releasing the gear groove, which prevents the external gear from rotating forward and backward when the external gear is in the first state. The detent has a first position to mesh the gear groove and a second position to release the gear groove, so that the external gear is only allowed to unidirectionally rotate in the first position.

Abstract: In one example, a computing device may include an antenna, a tuning circuit to tune the antenna, a wireless local area network (WLAN) module coupled to the antenna, a system firmware to boot up the computing device, and a look-up table residing in the system firmware. The system firmware may receive channel information from the WLAN module, determine a state of the antenna corresponding to the received channel information using the look-up table, and tune a frequency of the antenna corresponding to the determined state via the tuning circuit.

Abstract: A method of forming a conductive area at a top surface of a light-emitting diode includes: preparing a substrate having a top surface with a conductive pad thereon; bonding a light-emitting diode having first and second type semiconductor layers and an active layer to the conductive pad; forming a polymer layer on the substrate such that a difference between a distance from a first surface of the polymer layer to the top surface of the substrate and a distance from a second surface of the polymer layer to a top surface of the light-emitting diode is greater than a distance from an interface between a second type semiconductor layer and an active layer to the top surface of the substrate; and etching the polymer layer till the second type semiconductor layer to expose the top surface of the light-emitting diode from the polymer layer.

Abstract: Examples associated with networking component repair are described. One example includes detecting an error associated with a networking component of a device. The networking component may be disabled and enabled to attempt to remedy the error associated with the networking component. When the disabling and enabling actions fail to remedy the error and the error is associated with a driver for controlling the networking device, a setting associated with the networking component may be repaired. The networking component may be controlled to connect to a known available network using historical connection settings.

Abstract: In examples, a non-transitory computer-readable medium stores machine-readable instructions which, when executed by a processor of an electronic device, cause the processor to receive a packet, determine a priority level of the packet, calculate a delay time based on the priority level, and transmit the packet over a network upon an expiration of the delay time.

Abstract: An electronic device housed in glass or other fragile material which is nevertheless proofed against breakage includes a shell, a battery, and a display screen formed on one side of the battery and received in the shell. The shell comprises a glass back cover and a crack-proof layer. The crack-proof layer is formed on the glass back cover. The battery abuts the crack-proof layer. The display screen is assembled beside the battery. The display screen is received in and partially exposed to the shell. The battery is electronically connected to the display screen. The electronic device is protected within the glass back cover which is itself proofed against shock and breakage when dropped or impacted. The disclosure further provides a method for manufacturing the electronic device.

Abstract: A method of forming a conductive area at a top surface of a light-emitting diode includes: preparing a substrate having a top surface with a conductive pad thereon; bonding a light-emitting diode having first and second type semiconductor layers and an active layer to the conductive pad; forming a polymer layer on the substrate such that a difference between a distance from a first surface of the polymer layer to the top surface of the substrate and a distance from a second surface of the polymer layer to a top surface of the light-emitting diode is greater than a distance from an interface between a second type semiconductor layer and an active layer to the top surface of the substrate; and etching the polymer layer till the second type semiconductor layer to expose the top surface of the light-emitting diode from the polymer layer.