Abstract: A method and an apparatus for depth estimate of a binocular image, wherein the method comprises: obtaining a binocular image captured by a binocular camera, the binocular image including a first image and a second image, wherein the first image includes a first region of interest and the second image includes a second region of interest, and the first region of interest and the second region of interest indicate the same object; obtaining a parallax map between the first image and the second image as a first parallax map and obtaining a parallax map between the first region of interest and the second region of interest as a second parallax map; updating the first parallax map with the second parallax map to obtain the updated first parallax map; generating, based on the updated first parallax map, a depth map corresponding to the binocular image.

Abstract: The present invention discloses a ?-transaminase mutant obtained through DNA synthetic shuffling combined mutation. The ?-transaminase mutant is obtained through point mutation of a wild type ?-transaminase from Aspergillus terrus. The amino acid sequence of the wild type ?-transaminase is shown in SEQ ID NO: 1. The mutation site of the ?-transaminase mutant is any one of: (1) F115L-H210N-M150C-M280C; (2) F115L-H210N; (3) F115L-H210N-E253A-I295V; (4) I77L-F115L-E133A-H210N-N245D; (5) I77L-Q97E-F115L-L118T-E253A-G292D; (6) I77L-E133A-N245D-G292D; and (7) H210N-N245D-E253A-G292D. According to the present invention, forward mutations obtained in the previous stage are randomly combined through a DNA synthetic shuffling combined mutation method.

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include one or more patterned features separated by exposed regions of the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor and the hydrogen-containing precursor. Forming the plasma of the silicon-containing precursor and the hydrogen-containing precursor may be performed at a plasma power of less than or about 1,000 W. The methods may include depositing a silicon-containing material on the one or more patterned features along the substrate. The silicon-containing material may be deposited on the patterned features at a rate of at least 2:1 relative to deposition on the exposed regions of the substrate.

Abstract: Exemplary methods of semiconductor processing may include providing deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may include a photoresist material overlying a silicon-containing material. The photoresist material may define an aperture. The processing region may be at least partially defined above a substrate support on which the substrate is seated. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a material on the photoresist material. The methods may include providing an etchant precursor to the processing region of the semiconductor processing chamber. A bias power may be applied to the substrate support from a bias power source. The methods may include etching a portion of the photoresist material. The etching may decrease a local critical dimension uniformity of the aperture of the photoresist material.

Abstract: Described herein is a method for etching a sample. The method includes performing a plasma etch pulse. The plasma etch pulse is performed by directing a gas flow comprising silicon tetrachloride (SiCl4) and a diluent towards the sample. While directing the gas flow, a bias power is applied to achieve a bias state for a first time period. Then, a source power is applied to achieve a source state for a second time period, and then no bias power and no source power is applied to achieve a recovery state for a third time period. The plasma etch pulse is repeated until a target amount of the sample is etched.

Abstract: An information processing system (10) comprises: an image acquisition unit (110) that acquires a face image and an iris image with respect to a registration target; a score computing unit (120) that calculates a quality-score indicating quality with respect to each of the face image and the iris image; and a selection unit (130) that selects each of the face image and the iris image for registration based on the quality-score. According to this information processing system, it is possible to register high-quality face image and iris image.

Abstract: Memory devices and methods of forming memory devices are described. Methods of forming electronic devices are described where carbon is used as the removable mold material for the formation of a DRAM capacitor. A dense, high-temperature (500° C. or greater) PECVD carbon material is used as the removable mold material, e.g., the core material, instead of oxide. The carbon material can be removed by isotropic etching with exposure to radicals of oxygen (O2), nitrogen (N2), hydrogen (H2), ammonia (NH3), and combinations thereof.

Abstract: Methods and systems for ultrahigh-speed multi-parametric photoacoustic microscopy that include an optical-acoustic combiner (OAC) configured to reflect the laser pulses into the sample and to transmit the photoacoustic signals to the transducer are disclosed.

Abstract: Described herein is a method for etching a sample. The method includes performing a plasma etch pulse. The plasma etch pulse is performed by directing a gas flow comprising silicon tetrachloride (SiCl4) and a diluent towards the sample. While directing the gas flow, a bias power is applied to achieve a bias state for a first time period. Then, a source power is applied to achieve a source state for a second time period, and then no bias power and no source power is applied to achieve a recovery state for a third time period. The plasma etch pulse is repeated until a target amount of the sample is etched.

Abstract: Provided is an electronic endoscope (1), comprising an insertion portion (2) and an operation portion (3) sequentially connected to each other. The insertion portion (2) comprises a front end portion (21) and a bending portion (22). The end face of a distal end of the front end portion (21) has an inclined surface (211). The inclined surface (211) crosses with the end face of the distal end of the front end portion (21) to form an edge line (216). The edge line (216) is parallel to a bending direction of the bending portion (22). The electronic endoscope (1) can achieve better delivery with low costs for use environments.

Abstract: The present disclosure provides a method and system for controlling a medical device. The method for controlling the medical device may include: obtaining information related to the medical device and/or information related to a target object; controlling the medical device based on the information related to the medical device and/or the information related to the target object.

Abstract: The present disclosure provides systems and methods for performing an automated scan preparation for a scan of a target subject. The automated scan preparation may include, for example, identifying a target subject to be scanned, generating a target posture model of the target subject, causing a movable component of a medical imaging device to move to its target position, controlling a light field of the medical imaging device, determining a target subject orientation, determining a dose estimation, selecting at least one target ionization chamber, determining whether the posture of the target subject needs to be adjusted, determining one or more scanning parameters (e.g., a size of a light field), performing a preparation check, or the like, or any combination thereof.

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include one or more patterned features separated by exposed regions of the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor and the hydrogen-containing precursor. Forming the plasma of the silicon-containing precursor and the hydrogen-containing precursor may be performed at a plasma power of less than or about 1,000 W. The methods may include depositing a silicon-containing material on the one or more patterned features along the substrate. The silicon-containing material may be deposited on the patterned features at a rate of at least 2:1 relative to deposition on the exposed regions of the substrate.

Abstract: In order to shorten the operation time for a registration operator to make a designation to register a subregion where a person or thing to be registered appears in a captured image, this information registration device is provided with a line-of-sight detection unit, an extraction unit and a registration unit. The line-of-sight detection unit detects the line of sight of the registration operator who is looking at the captured image which is shown on a display device. If the registration operator's detected line of sight has not moved for an attention time configured in advance, the extraction unit extracts an image of the person or object appearing in the subregion of the captured image where the registration operator's line of sight is directed. The registration unit registers the extracted image in a predetermined storage device.

Abstract: The present disclosure discloses use of a combination of an HIP-1? inhibitor and/or an AR inhibitor in inhibiting an .inflammatory cytokine storm,. treating or preventing viral pneumonia. The present disclosure finds that inhibitors HIF-1 a and AR prevent the transcription of inflammatory cytokine storm-related genes (IL6, MMP2, MMP13, ADAMTS4, ELN, VCAN. COL3A1 and VEGFA) in fibroblasts under low-oxygen environment by effectively inhibiting the interaction between HIF-1? and AR to reduce the expression quantity of the related genes, thereby influencing the activation of lung fibroblasts. Inhibition of activation of lung fibroblasts enables patients with acute respiratory distress syndrome (ARDS) due to severe respiratory tract infection to maintain the lung functions and improve clinical efficacy.

Abstract: The present invention discloses a ?-transaminase mutant obtained through DNA synthetic shuffling combined mutation. The ?-transaminase mutant is obtained through point mutation of a wild type ?-transaminase from Aspergillus terrus. The amino acid sequence of the wild type ?-transaminase is shown in SEQ ID NO: 1. The mutation site of the ?-transaminase mutant is any one of: (1) F115L-H210N-M150C-M280C; (2) F115L-H210N; (3) F115L-H210N-E253A-I295V; (4) I77L-F115L-E133A-H210N-N245D; (5) I77L-Q97E-F115L-L118T-E253A-G292D; (6) I77L-E133A-N245D-G292D; and (7) H210N-N245D-E253A-G292D. According to the present invention, forward mutations obtained in the previous stage are randomly combined through a DNA synthetic shuffling combined mutation method.

Abstract: A method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber comprises supporting the substrate on a support surface of a substrate support assembly that includes an array of independently controlled thermal control elements therein which are operable to control the spatial and temporal temperature of the support surface of the substrate support assembly to form independently controllable heater zones which are formed to correspond to a desired temperature profile across the upper surface of the semiconductor substrate. The etch rate across the upper surface of the semiconductor substrate during plasma etching depends on a localized temperature thereof wherein the desired temperature profile is determined such that the upper surface of the semiconductor substrate is planarized within a predetermined time. The substrate is plasma etched for the predetermined time thereby planarizing the upper surface of the substrate.

Abstract: A mobile terminal is provided as a solution to a problem in which ease use is low. Display part 1A is provided on casing A, while display part 1B is provided on casing B. Detector 2 detects the attitude of at least one of casings A and B and the opening/closing angle between casings A and B. Execution section 3 executes an application. Controller 4 displays a view of the application on at least one of display parts 1A and 1B in a display style according to detection results detected by detector 2.

Abstract: A method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber comprises supporting the substrate on a support surface of a substrate support assembly that includes an array of independently controlled thermal control elements therein which are operable to control the spatial and temporal temperature of the support surface of the substrate support assembly to form independently controllable heater zones which are formed to correspond to a desired temperature profile across the upper surface of the semiconductor substrate. The etch rate across the upper surface of the semiconductor substrate during plasma etching depends on a localized temperature thereof wherein the desired temperature profile is determined such that the upper surface of the semiconductor substrate is planarized within a predetermined time. The substrate is plasma etched for the predetermined time thereby planarizing the upper surface of the substrate.

Abstract: A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes is provided. The patterned organic mask is treated by flowing a treatment gas comprising H2. A plasma is formed from the treatment gas. The patterned via holes are rounded to form patterned rounded via holes by exposing the patterned via holes to the plasma. The flow of the treatment gas is stopped. The plurality of patterned rounded via holes are transferred into the etch layer.