Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for performing neural architecture search for machine learning models. In one aspect, a method comprises receiving training data for a machine learning, generating a plurality of candidate neural networks for performing the machine learning task, wherein each candidate neural network comprises a plurality of instances of a layer block composed of a plurality of layers, for each candidate neural network, selecting a respective type for each of the plurality of layers from a set of layer types that comprises, training the candidate neural network and evaluating performance scores for the trained candidate neural networks as applied to the machine learning task, and determining a final neural network for performing the machine learning task based at least on the performance scores for the candidate neural networks.

Abstract: Memory devices and methods of forming memory devices are described. Methods of forming electronic devices are described where carbon is used as the removable mold material for the formation of a DRAM capacitor. A dense, high-temperature (500° C. or greater) PECVD carbon material is used as the removable mold material, e.g., the core material, instead of oxide. The carbon material can be removed by isotropic etching with exposure to radicals of oxygen (O2), nitrogen (N2), hydrogen (H2), ammonia (NH3), and combinations thereof.

Abstract: Methods and systems for ultrahigh-speed multi-parametric photoacoustic microscopy that include an optical-acoustic combiner (OAC) configured to reflect the laser pulses into the sample and to transmit the photoacoustic signals to the transducer are disclosed.

Abstract: Described herein is a method for etching a sample. The method includes performing a plasma etch pulse. The plasma etch pulse is performed by directing a gas flow comprising silicon tetrachloride (SiCl4) and a diluent towards the sample. While directing the gas flow, a bias power is applied to achieve a bias state for a first time period. Then, a source power is applied to achieve a source state for a second time period, and then no bias power and no source power is applied to achieve a recovery state for a third time period. The plasma etch pulse is repeated until a target amount of the sample is etched.

Abstract: Provided is an electronic endoscope (1), comprising an insertion portion (2) and an operation portion (3) sequentially connected to each other. The insertion portion (2) comprises a front end portion (21) and a bending portion (22). The end face of a distal end of the front end portion (21) has an inclined surface (211). The inclined surface (211) crosses with the end face of the distal end of the front end portion (21) to form an edge line (216). The edge line (216) is parallel to a bending direction of the bending portion (22). The electronic endoscope (1) can achieve better delivery with low costs for use environments.

Abstract: The present disclosure provides a method and system for controlling a medical device. The method for controlling the medical device may include: obtaining information related to the medical device and/or information related to a target object; controlling the medical device based on the information related to the medical device and/or the information related to the target object.

Abstract: The present disclosure provides systems and methods for performing an automated scan preparation for a scan of a target subject. The automated scan preparation may include, for example, identifying a target subject to be scanned, generating a target posture model of the target subject, causing a movable component of a medical imaging device to move to its target position, controlling a light field of the medical imaging device, determining a target subject orientation, determining a dose estimation, selecting at least one target ionization chamber, determining whether the posture of the target subject needs to be adjusted, determining one or more scanning parameters (e.g., a size of a light field), performing a preparation check, or the like, or any combination thereof.

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include one or more patterned features separated by exposed regions of the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor and the hydrogen-containing precursor. Forming the plasma of the silicon-containing precursor and the hydrogen-containing precursor may be performed at a plasma power of less than or about 1,000 W. The methods may include depositing a silicon-containing material on the one or more patterned features along the substrate. The silicon-containing material may be deposited on the patterned features at a rate of at least 2:1 relative to deposition on the exposed regions of the substrate.

Abstract: In order to shorten the operation time for a registration operator to make a designation to register a subregion where a person or thing to be registered appears in a captured image, this information registration device is provided with a line-of-sight detection unit, an extraction unit and a registration unit. The line-of-sight detection unit detects the line of sight of the registration operator who is looking at the captured image which is shown on a display device. If the registration operator's detected line of sight has not moved for an attention time configured in advance, the extraction unit extracts an image of the person or object appearing in the subregion of the captured image where the registration operator's line of sight is directed. The registration unit registers the extracted image in a predetermined storage device.

Abstract: The present disclosure discloses use of a combination of an HIP-1? inhibitor and/or an AR inhibitor in inhibiting an .inflammatory cytokine storm,. treating or preventing viral pneumonia. The present disclosure finds that inhibitors HIF-1 a and AR prevent the transcription of inflammatory cytokine storm-related genes (IL6, MMP2, MMP13, ADAMTS4, ELN, VCAN. COL3A1 and VEGFA) in fibroblasts under low-oxygen environment by effectively inhibiting the interaction between HIF-1? and AR to reduce the expression quantity of the related genes, thereby influencing the activation of lung fibroblasts. Inhibition of activation of lung fibroblasts enables patients with acute respiratory distress syndrome (ARDS) due to severe respiratory tract infection to maintain the lung functions and improve clinical efficacy.

Abstract: The present invention discloses a ?-transaminase mutant obtained through DNA synthetic shuffling combined mutation. The ?-transaminase mutant is obtained through point mutation of a wild type ?-transaminase from Aspergillus terrus. The amino acid sequence of the wild type ?-transaminase is shown in SEQ ID NO: 1. The mutation site of the ?-transaminase mutant is any one of: (1) F115L-H210N-M150C-M280C; (2) F115L-H210N; (3) F115L-H210N-E253A-I295V; (4) I77L-F115L-E133A-H210N-N245D; (5) I77L-Q97E-F115L-L118T-E253A-G292D; (6) I77L-E133A-N245D-G292D; and (7) H210N-N245D-E253A-G292D. According to the present invention, forward mutations obtained in the previous stage are randomly combined through a DNA synthetic shuffling combined mutation method.

Abstract: A method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber comprises supporting the substrate on a support surface of a substrate support assembly that includes an array of independently controlled thermal control elements therein which are operable to control the spatial and temporal temperature of the support surface of the substrate support assembly to form independently controllable heater zones which are formed to correspond to a desired temperature profile across the upper surface of the semiconductor substrate. The etch rate across the upper surface of the semiconductor substrate during plasma etching depends on a localized temperature thereof wherein the desired temperature profile is determined such that the upper surface of the semiconductor substrate is planarized within a predetermined time. The substrate is plasma etched for the predetermined time thereby planarizing the upper surface of the substrate.

Abstract: A mobile terminal is provided as a solution to a problem in which ease use is low. Display part 1A is provided on casing A, while display part 1B is provided on casing B. Detector 2 detects the attitude of at least one of casings A and B and the opening/closing angle between casings A and B. Execution section 3 executes an application. Controller 4 displays a view of the application on at least one of display parts 1A and 1B in a display style according to detection results detected by detector 2.

Abstract: A method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber comprises supporting the substrate on a support surface of a substrate support assembly that includes an array of independently controlled thermal control elements therein which are operable to control the spatial and temporal temperature of the support surface of the substrate support assembly to form independently controllable heater zones which are formed to correspond to a desired temperature profile across the upper surface of the semiconductor substrate. The etch rate across the upper surface of the semiconductor substrate during plasma etching depends on a localized temperature thereof wherein the desired temperature profile is determined such that the upper surface of the semiconductor substrate is planarized within a predetermined time. The substrate is plasma etched for the predetermined time thereby planarizing the upper surface of the substrate.

Abstract: A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes is provided. The patterned organic mask is treated by flowing a treatment gas comprising H2. A plasma is formed from the treatment gas. The patterned via holes are rounded to form patterned rounded via holes by exposing the patterned via holes to the plasma. The flow of the treatment gas is stopped. The plurality of patterned rounded via holes are transferred into the etch layer.

Abstract: Methods of removing photoresists from low-k dielectric films are described. For example, a method includes forming and patterning a photoresist layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Trenches are formed in the exposed portions of the low-k dielectric layer. A plurality of process cycles is performed to remove the photoresist layer. Each process cycle includes forming a silicon source layer on surfaces of the trenches of the low-k dielectric layer, and exposing the photoresist layer to an oxygen source to form an Si—O-containing layer on the surfaces of the trenches of the low-k dielectric layer and to remove at least a portion of the photoresist layer.

Abstract: Methods of multiple patterning of low-k dielectric films are described. For example, a method includes forming and patterning a first mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. A second mask layer is formed and patterned above the first mask layer. A pattern of the second mask layer is transferred at least partially into the low-k dielectric layer by modifying first exposed portions of the low-k dielectric layer with a first plasma process and removing the modified portions of the low-k dielectric layer. Subsequently, a pattern of the first mask layer is transferred at least partially into the low-k dielectric layer by modifying second exposed portions of the low-k dielectric layer with a second plasma process and removing the modified portions of the low-k dielectric layer.

Abstract: Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric layer is surface-conditioned with a second plasma process. The surface-conditioning removes the fluorocarbon polymer and forms an Si—O-containing protecting layer on the low-k dielectric layer. The Si—O-containing protecting layer is removed with a third plasma process.

Abstract: A stand-up paddleboard exercise assembly having a paddle member with a proximal end and a distal end and a support assembly with an upper support surface with a left edge and a right edge, a frame separating the upper support surface from a ground surface, a following arm having a proximal end coupled to the support assembly, a distal end opposite the proximal end, and operable to rotate from a first position where the distal end is closer to the left edge of the upper support surface to a second position where the distal end is closer to the right edge of the upper support surface, the support assembly also having a resistance-producing assembly physically coupled, through a cable, to the distal end of the paddle member, the cable being slidably coupled to the following arm.

Abstract: A method for forming devices in an oxide layer over a substrate, wherein a metal containing layer forms at least either an etch stop layer below the oxide layer or a patterned mask above the oxide layer, wherein a patterned organic mask is above the oxide layer is provided. The substrate is placed in a plasma processing chamber. The oxide layer is etched through the patterned organic mask, wherein metal residue from the metal containing layer forms metal residue on sidewalls of the oxide layer. The patterned organic mask is stripped. The metal residue is cleaned by the steps comprising providing a cleaning gas comprising BCl3 and forming a plasma from the cleaning gas. The substrate is removed from the plasma processing chamber.