Abstract: A stand-up paddleboard exercise assembly having a paddle member with a proximal end and a distal end and a support assembly with an upper support surface with a left edge and a right edge, a frame separating the upper support surface from a ground surface, a following arm having a proximal end coupled to the support assembly, a distal end opposite the proximal end, and operable to rotate from a first position where the distal end is closer to the left edge of the upper support surface to a second position where the distal end is closer to the right edge of the upper support surface, the support assembly also having a resistance-producing assembly physically coupled, through a cable, to the distal end of the paddle member, the cable being slidably coupled to the following arm.

Abstract: A method for forming devices in an oxide layer over a substrate, wherein a metal containing layer forms at least either an etch stop layer below the oxide layer or a patterned mask above the oxide layer, wherein a patterned organic mask is above the oxide layer is provided. The substrate is placed in a plasma processing chamber. The oxide layer is etched through the patterned organic mask, wherein metal residue from the metal containing layer forms metal residue on sidewalls of the oxide layer. The patterned organic mask is stripped. The metal residue is cleaned by the steps comprising providing a cleaning gas comprising BCl3 and forming a plasma from the cleaning gas. The substrate is removed from the plasma processing chamber.

Abstract: Methods of patterning low-k dielectric films are described. For example, a method includes forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Exposed portions of the low-k dielectric layer are modified with a plasma process. The modified portions of the low-k dielectric layer are removed selective to the mask layer and unmodified portions of the low-k dielectric layer.

Abstract: A method for etching a dielectric layer disposed below a patterned organic mask with features, with hardmasks at bottoms of some of the organic mask features is provided. An etch gas is provided. The etch gas is formed into a plasma. A bias RF with a frequency between 2 and 60 MHz is provided that provides pulsed bias with a pulse frequency between 10 Hz and 1 kHz wherein the pulsed bias selectively deposits on top of the organic mask with respect to the dielectric layer.

Abstract: Methods of patterning low-k dielectric films are described.

Abstract: A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes is provided. The patterned organic mask is treated by flowing a treatment gas comprising H2. A plasma is formed from the treatment gas. The patterned via holes are rounded to form patterned rounded via holes by exposing the patterned via holes to the plasma. The flow of the treatment gas is stopped. The plurality of patterned rounded via holes are transferred into the etch layer.

Abstract: A ski-simulation assembly includes a vertical member with a first portion coupled to a base and a second portion extending upwardly from the base, a first cable portion slidably engaged with the vertical member at the second portion of the vertical member, a second cable portion slidably engaged with the vertical member at the second portion of the vertical member, and a resistance-producing assembly physically coupled to the first cable portion and the second cable portion, where the resistance-producing assembly operable to apply a selective resistance to the first cable portion independent of movement of the second cable portion and apply a selective resistance to the second cable portion independent of movement of the first cable portion.

Abstract: Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric layer is surface-conditioned with a second plasma process. The surface-conditioning removes the fluorocarbon polymer and forms an Si—O-containing protecting layer on the low-k dielectric layer. The Si—O-containing protecting layer is removed with a third plasma process.

Abstract: A mobile terminal is provided as a solution to a problem in which ease use is low. Display part 1A is provided on casing A, while display part 1B is provided on casing B. Detector 2 detects the attitude of at least one of casings A and B and the opening/closing angle between casings A and B. Execution section 3 executes an application. Controller 4 displays a view of the application on at least one of display parts 1A and 1B in a display style according to detection results detected by detector 2.

Abstract: Methods of patterning low-k dielectric films are described.

Abstract: Methods of patterning low-k dielectric films are described. For example, a method includes forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Exposed portions of the low-k dielectric layer are modified with a plasma process. The modified portions of the low-k dielectric layer are removed selective to the mask layer and unmodified portions of the low-k dielectric layer.

Abstract: Methods of removing photoresists from low-k dielectric films are described. For example, a method includes forming and patterning a photoresist layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Trenches are formed in the exposed portions of the low-k dielectric layer. A plurality of process cycles is performed to remove the photoresist layer. Each process cycle includes forming a silicon source layer on surfaces of the trenches of the low-k dielectric layer, and exposing the photoresist layer to an oxygen source to form an Si—O-containing layer on the surfaces of the trenches of the low-k dielectric layer and to remove at least a portion of the photoresist layer.

Abstract: Methods of multiple patterning of low-k dielectric films are described. For example, a method includes forming and patterning a first mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. A second mask layer is formed and patterned above the first mask layer. A pattern of the second mask layer is transferred at least partially into the low-k dielectric layer by modifying first exposed portions of the low-k dielectric layer with a first plasma process and removing the modified portions of the low-k dielectric layer. Subsequently, a pattern of the first mask layer is transferred at least partially into the low-k dielectric layer by modifying second exposed portions of the low-k dielectric layer with a second plasma process and removing the modified portions of the low-k dielectric layer.

Abstract: A portable information terminal includes: a first housing including display section; a second housing connected to the first housing, an open angle that is an angle formed by the second housing and a plane of display section being changeable; angle detection section whose output value changes according to a operation in which the first housing and the second housing are opened or closed; and control section that causes display section to execute a first display process if the output value of angle detection section is equal to or greater than a threshold and to execute a second display process if the output value is less than the threshold. One of the first display process and the second display process includes a process that causes information displayed on display section to become illegible compared to information displayed on display section that executes the other display process.

Abstract: A significantly improved low-k dielectric patterning method is described herein using plasma comprising an oxygen radical source and a silicon source to remove the photo-resist layer.

Abstract: A ski-simulation assembly includes a vertical member with a first portion coupled to a base and a second portion extending upwardly from the base, a first cable portion slidably engaged with the vertical member at the second portion of the vertical member, a second cable portion slidably engaged with the vertical member at the second portion of the vertical member, and a resistance-producing assembly physically coupled to the first cable portion and the second cable portion, where the resistance-producing assembly operable to apply a selective resistance to the first cable portion independent of movement of the second cable portion and apply a selective resistance to the second cable portion independent of movement of the first cable portion.

Abstract: A portable information terminal includes display (1) equipped with a touch panel capable of detecting a touch; and controller (2) that executes a process corresponding to a user interface component when a touch to the user interface component displayed on display (1) is detected. When the touch operation to display (1) is a specific touch operation and the user interface component specified by the touch operation is a specific user interface component undetermined as to whether or not to execute the corresponding process, controller (2) does not execute the process corresponding to the specified user interface component.

Abstract: Methods of patterning low-k dielectric films are described.

Abstract: Methods for etching silicon-based antireflective layers are provided herein. In some embodiments, a method of etching a silicon-based antireflective layer may include providing to a process chamber a substrate having a multiple-layer resist thereon, the multiple-layer resist comprising a patterned photoresist layer defining features to be etched into the substrate disposed above a silicon-based antireflective coating; and etching the silicon-based antireflective layer through the patterned photoresist layer using a plasma formed from a process gas having a primary reactive agent comprising a chlorine-containing gas. In some embodiments, the chlorine-containing gas is chlorine (Cl2).

Abstract: The present invention proposes a two-eye adaptive optical visual perception training apparatus, comprising: left and right eye wave aberration measurement sub-systems for measuring eye wave aberrations of the left and right eyes of a person to be tested; left and right eye wave aberration correction sub-systems for driving and controlling the wavefront corrector to correct the wave aberrations of the left and right eyes of the person to be tested based on the measured wave aberrations of the left and right eyes of the tested person; and a two-eye visual perception training sub-system for processing and displaying sighting targets of different spatial frequencies and different contrasts and presenting the sighting targets to the tested person, to conduct a two-eye visual function measurement process and a visual perception training process.