Patents by Inventor Yijie Zhao

Yijie Zhao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory devices and methods of operating memory devices including applying a potential to a source and a select gate between the source and a string of memory cells while performing a program operation on a memory cell in the string
    Patent number: 9251907
    Abstract: Devices, systems and methods of biasing in memory devices facilitate memory device programming and/or erase operations. In at least one embodiment, a first string of memory cells comprising a selected memory cell and a second string of memory cells are coupled to a common data line and a common source where the data line and the source are biased to substantially the same potential during a programming and/or erase operation performed on one or more of the strings of memory cells.
    Type: Grant
    Filed: April 3, 2012
    Date of Patent: February 2, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Akira Goda, Yijie Zhao, Krishna Parat
  • Apparatuses and methods comprising a channel region having different minority carrier lifetimes
    Patent number: 9190472
    Abstract: Apparatuses, such as memory devices, memory cell strings, and electronic systems, and methods of forming such apparatuses are shown. One such apparatus includes a channel region that has a minority carrier lifetime that is lower at one or more end portions, than in a middle portion. Other apparatuses and methods are also disclosed.
    Type: Grant
    Filed: June 2, 2014
    Date of Patent: November 17, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Paolo Tessariol, Aurelio Giancarlo Mauri, Akira Goda, Yijie Zhao
  • PROGRAMMING MEMORIES AND METHODS
    Publication number: 20150170757
    Abstract: Memory devices and programming methods for memories are disclosed, such as those adapted to program a memory using an increasing channel voltage for a first portion of programming, and an increasing but reduced channel voltage for a second portion of programming.
    Type: Application
    Filed: February 27, 2015
    Publication date: June 18, 2015
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Yijie Zhao, Akira Goda
  • Programming methods and memories
    Patent number: 8982631
    Abstract: Memory devices and programming methods for memories are disclosed, such as those adapted to program a memory using an increasing channel voltage for a first portion of programming, and an increasing but reduced channel voltage for a second portion of programming.
    Type: Grant
    Filed: February 9, 2010
    Date of Patent: March 17, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Yijie Zhao, Akira Goda
  • APPARATUSES AND METHODS COMPRISING A CHANNEL REGION HAVING DIFFERENT MINORITY CARRIER LIFETIMES
    Publication number: 20140264447
    Abstract: Apparatuses, such as memory devices, memory cell strings, and electronic systems, and methods of forming such apparatuses are shown. One such apparatus includes a channel region that has a minority carrier lifetime that is lower at one or more end portions, than in a middle portion. Other apparatuses and methods are also disclosed.
    Type: Application
    Filed: June 2, 2014
    Publication date: September 18, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Paolo Tessariol, Aurelio Giancarlo Mauri, Akira Goda, Yijie Zhao
  • Sense operation in a memory device
    Patent number: 8780626
    Abstract: Methods for sensing and memory devices are disclosed. One such method for sensing determines a threshold voltage of an n-bit memory cell that is adjacent to an m-bit memory cell to be sensed. A control gate of the m-bit memory cell to be sensed is biased with a sense voltage adjusted responsive to the determined threshold voltage of the n-bit memory cell.
    Type: Grant
    Filed: February 8, 2013
    Date of Patent: July 15, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Yijie Zhao, Akira Goda, Mark A. Helm
  • Apparatuses and methods comprising a channel region having different minority carrier lifetimes
    Patent number: 8742481
    Abstract: Apparatuses, such as memory devices, memory cell strings, and electronic systems, and methods of forming such apparatuses are shown. One such apparatus includes a channel region that has a minority carrier lifetime that is lower at one or more end portions, than in a middle portion. Other apparatuses and methods are also disclosed.
    Type: Grant
    Filed: August 16, 2011
    Date of Patent: June 3, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Paolo Tessariol, Aurelio Giancarlo Mauri, Akira Goda, Yijie Zhao
  • MEMORY DEVICES AND BIASING METHODS FOR MEMORY DEVICES
    Publication number: 20130258781
    Abstract: Devices, systems and methods of biasing in memory devices facilitate memory device programming and/or erase operations. In at least one embodiment, a first string of memory cells comprising a selected memory cell and a second string of memory cells are coupled to a common data line and a common source where the data line and the source are biased to substantially the same potential during a programming and/or erase operation performed on one or more of the strings of memory cells.
    Type: Application
    Filed: April 3, 2012
    Publication date: October 3, 2013
    Inventors: Akira Goda, Yijie Zhao, Krishna Parat
  • APPARATUSES AND METHODS COMPRISING A CHANNEL REGION HAVING DIFFERENT MINORITY CARRIER LIFETIMES
    Publication number: 20130043505
    Abstract: Apparatuses, such as memory devices, memory cell strings, and electronic systems, and methods of forming such apparatuses are shown. One such apparatus includes a channel region that has a minority carrier lifetime that is lower at one or more end portions, than in a middle portion. Other apparatuses and methods are also disclosed.
    Type: Application
    Filed: August 16, 2011
    Publication date: February 21, 2013
    Applicant: Micron Technology, Inc.
    Inventors: Paolo Tessariol, Aurelio Giancarlo Mauri, Akira Goda, Yijie Zhao
  • Sense operation in a memory device
    Patent number: 8374028
    Abstract: Methods for sensing and memory devices are disclosed. One such method for sensing determines a threshold voltage of an n-bit memory cell that is adjacent to an m-bit memory cell to be sensed. A control gate of the m-bit memory cell to be sensed is biased with a sense voltage adjusted responsive to the determined threshold voltage of the n-bit memory cell.
    Type: Grant
    Filed: January 19, 2011
    Date of Patent: February 12, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Yijie Zhao, Akira Goda, Mark A. Helm
  • SENSE OPERATION IN A MEMORY DEVICE
    Publication number: 20120182797
    Abstract: Methods for sensing and memory devices are disclosed. One such method for sensing determines a threshold voltage of an n-bit memory cell that is adjacent to an m-bit memory cell to be sensed. A control gate of the m-bit memory cell to be sensed is biased with a sense voltage adjusted responsive to the determined threshold voltage of the n-bit memory cell.
    Type: Application
    Filed: January 19, 2011
    Publication date: July 19, 2012
    Inventors: Yijie Zhao, Akira Goda, Mark A. Helm
  • Dynamic pass voltage for sense operation in a memory device
    Patent number: 8144516
    Abstract: Methods for sensing and memory devices are disclosed. One such method for sensing uses a dynamic pass voltage on at least one adjacent memory cell that is adjacent to a selected memory cell for programming. If the adjacent memory cell is not programmed, the pass voltage is reduced on the adjacent memory cell. The adjacent memory cell can be on the drain side, the source side, or both drain and source sides of the selected memory cell.
    Type: Grant
    Filed: December 3, 2009
    Date of Patent: March 27, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Yijie Zhao, Akira Goda, Jian Li, Haitao Liu
  • PROGRAMMING METHODS AND MEMORIES
    Publication number: 20110194352
    Abstract: Memory devices and programming methods for memories are disclosed, such as those adapted to program a memory using an increasing channel voltage for a first portion of programming, and an increasing but reduced channel voltage for a second portion of programming.
    Type: Application
    Filed: February 9, 2010
    Publication date: August 11, 2011
    Inventors: Yijie Zhao, Akira Goda
  • DYNAMIC PASS VOLTAGE FOR SENSE OPERATION IN A MEMORY DEVICE
    Publication number: 20110134697
    Abstract: Methods for sensing and memory devices are disclosed. One such method for sensing uses a dynamic pass voltage on at least one adjacent memory cell that is adjacent to a selected memory cell for programming. If the adjacent memory cell is not programmed, the pass voltage is reduced on the adjacent memory cell. The adjacent memory cell can be on the drain side, the source side, or both drain and source sides of the selected memory cell.
    Type: Application
    Filed: December 3, 2009
    Publication date: June 9, 2011
    Inventors: Yijie Zhao, Akira Goda, Jian Li, Haitao Liu