Abstract: The present invention is directed to a magnetic structure including a first seed layer, which is made of a first transition metal, formed on top of a second seed layer comprising cobalt, iron, and boron; and a magnetic fixed layer structure formed on top of the first seed layer and having a first invariable magnetization direction substantially perpendicular to a layer plane thereof. The magnetic fixed layer structure includes layers of a first magnetic material interleaved with layers of a second transition metal. The first transition metal may be chromium or iridium. The second transition metal may be nickel, platinum, palladium, or iridium. The second seed layer which comprises cobalt, iron, and boron, may have a noncrystalline structure. Moreover, the second seed layer may be non-magnetic or superparamagnetic. The magnetic structure may further includes a third seed layer, which may comprise tantalum, formed adjacent to the second seed layer opposite the first seed layer.

Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween; a second magnetic reference layer made of a material comprising cobalt and formed adjacent to the first magnetic reference layer opposite the insulating tunnel junction layer; an iridium layer formed adjacent to the second magnetic reference layer opposite the first magnetic reference layer; and a magnetic fixed layer formed adjacent to the iridium layer. The magnetic free layer has a variable magnetization direction substantially perpendicular to the layer plane thereof. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof.

Abstract: The present invention is directed to a magnetic structure, which includes a magnetic fixed layer structure formed on top of a seed layer structure. The seed layer structure includes one or more layers of a first transition metal, which may be platinum, palladium, nickel, or iridium, interleaved with one or more layers of a second transition metal, which may be tantalum, titanium, vanadium, molybdenum, chromium, tungsten, zirconium, hafnium, or niobium. The magnetic fixed layer structure has a first invariable magnetization direction substantially perpendicular to a layer plane thereof and includes layers of a first magnetic material interleaved with layers of the first transition metal. The first magnetic material may be made of cobalt.

Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure including one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a magnesium perpendicular enhancement layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the anti-ferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.

Abstract: The present invention is directed to a magnetic structure including a first seed layer, which is made of a first transition metal, formed on top of a second seed layer comprising cobalt, iron, and boron; and a magnetic fixed layer structure formed on top of the first seed layer and having a first invariable magnetization direction substantially perpendicular to a layer plane thereof. The magnetic fixed layer structure includes layers of a first magnetic material interleaved with layers of a second transition metal. The first transition metal may be chromium or iridium. The second transition metal may be nickel, platinum, palladium, or iridium. The second seed layer which comprises cobalt, iron, and boron, may have a noncrystalline structure. Moreover, the second seed layer may be non-magnetic or superparamagnetic. The magnetic structure may further includes a third seed layer, which may comprise tantalum, formed adjacent to the second seed layer opposite the first seed layer.

Abstract: The present invention is directed to a memory device that includes an array of memory cells. Each of the memory cells includes a memory element connected to a two-terminal selector element. The two-terminal selector element includes a first electrode and a second electrode with a volatile switching layer interposed therebetween. The second electrode is deposited on top of the volatile switching layer during fabrication. The first electrode has a composition comprising a metal element and the second electrode has a composition comprising the metal element and aluminum element. The metal element may be silver, copper, or nickel. The volatile switching layer may have a composite structure comprising a plurality of conductive particles embedded in an insulating matrix. Alternatively, the volatile switching layer may have a multilayer structure comprising one or more conductive layers interleaved with two or more insulating layers. The memory element may include a magnetic tunnel junction.

Abstract: A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.

Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; a non-magnetic metal layer formed adjacent to the magnetic free layer structure; an oxide layer formed adjacent to the non-magnetic metal layer; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the non-magnetic metal layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.

Abstract: The present invention is directed to a magnetic structure, which includes a magnetic fixed layer structure formed on top of a seed layer structure. The seed layer structure includes one or more layers of a first transition metal, which may be platinum, palladium, nickel, or iridium, interleaved with one or more layers of a second transition metal, which may be tantalum, titanium, vanadium, molybdenum, chromium, tungsten, zirconium, hafnium, or niobium. The magnetic fixed layer structure has a first invariable magnetization direction substantially perpendicular to a layer plane thereof and includes layers of a first magnetic material interleaved with layers of the first transition metal. The first magnetic material may be made of cobalt.

Abstract: The present invention is directed to a magnetic tunnel junction (MTJ) memory element including a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer; a magnesium oxide layer formed adjacent to the magnetic fixed layer; and a metal layer comprising nickel and chromium formed adjacent to the magnesium oxide layer. The magnetic reference layer structure includes a first and a second magnetic reference layers with a first perpendicular enhancement layer (PEL) interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction opposite to the first invariable magnetization direction.

Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an oxide layer formed adjacent to the magnetic free layer structure; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the oxide layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.

Abstract: The present invention is directed to an MTJ memory element, which comprises a magnetic fixed layer structure formed on top of a seed layer structure that includes a first seed layer and a second seed layer. The first seed layer includes one or more layers of nickel interleaved with one or more layers of a transition metal, which may be tantalum, titanium, or vanadium. The second seed layer is made of an alloy or compound comprising nickel and another transition metal, which may be chromium, tantalum, or titanium. The magnetic fixed layer structure has a first invariable magnetization direction substantially perpendicular to a layer plane thereof and includes layers of a first type material interleaved with layers of a second type material with at least one of the first and second type materials being magnetic. The first and second type materials may be cobalt and nickel, respectively.

Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof.

Abstract: The present invention is directed to an MTJ memory element, which includes a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; a tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure formed adjacent to the tunnel junction layer and having a first invariable magnetization direction perpendicular to a layer plane thereof; an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure; and a magnetic fixed layer structure formed adjacent to the anti-ferromagnetic coupling layer and having a second invariable magnetization direction that is perpendicular to a layer plane thereof and is opposite to the first invariable magnetization direction. The magnetic fixed layer structure includes multiple stacks of a trilayer unit structure, which includes three layers of different materials with at least one of the three layers of different materials being magnetic.

Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween; a second magnetic reference layer made of a material comprising cobalt and formed adjacent to the first magnetic reference layer opposite the insulating tunnel junction layer; an iridium layer formed adjacent to the second magnetic reference layer opposite the first magnetic reference layer; and a magnetic fixed layer formed adjacent to the iridium layer. The magnetic free layer has a variable magnetization direction substantially perpendicular to the layer plane thereof. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof.

Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an oxide layer formed adjacent to the magnetic free layer structure; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the oxide layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.

Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof.

Abstract: The present invention is directed to an MRAM device comprising a plurality of MTJ memory elements. Each of the memory elements includes a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween; a second magnetic reference layer formed adjacent to the first magnetic reference layer opposite the insulating tunnel junction layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the first magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic free layer has a variable magnetization direction substantially perpendicular to the layer plane thereof. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof.

Abstract: The present invention is directed to an MRAM device comprising a plurality of MTJ memory elements. Each of the memory elements includes a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween; a second magnetic reference layer formed adjacent to the first magnetic reference layer opposite the insulating tunnel junction layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the first magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic free layer has a variable magnetization direction substantially perpendicular to the layer plane thereof. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof.

Abstract: The present invention is directed to an MTJ memory element, which comprises a magnetic fixed layer structure formed on top of a seed layer structure that includes a first seed layer and a second seed layer. The first seed layer includes one or more layers of nickel interleaved with one or more layers of a transition metal, which may be tantalum, titanium, or vanadium. The second seed layer is made of an alloy or compound comprising nickel and another transition metal, which may be chromium, tantalum, or titanium. The magnetic fixed layer structure has a first invariable magnetization direction substantially perpendicular to a layer plane thereof and includes layers of a first type material interleaved with layers of a second type material with at least one of the first and second type materials being magnetic. The first and second type materials may be cobalt and nickel, respectively.