Abstract: The present invention is directed to an MTJ memory element including a magnetic free layer structure which includes one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure comprising a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer with the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with the second magnetic fixed sublayer formed adjacent to the anti-ferromagnetic

Abstract: The present invention is directed to a magnetic tunnel junction (MTJ) memory element including a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer; a magnesium oxide layer formed adjacent to the magnetic fixed layer; and a metal layer comprising nickel and chromium formed adjacent to the magnesium oxide layer. The magnetic reference layer structure includes a first and a second magnetic reference layers with a first perpendicular enhancement layer (PEL) interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction opposite to the first invariable magnetization direction.

Abstract: A memory device having features of the present invention comprises a reprogrammable memory portion including therein a first plurality of magnetic tunnel junctions (MTJs) whose resistance is switchable; and a one-time-programmable (OTP) memory portion including therein a second plurality of MTJs whose resistance is switchable and a third plurality of MTJs whose resistance is fixed. Each MTJ of the first, second, and third plurality of MTJs includes a magnetic free layer having a magnetization direction substantially perpendicular to a layer plane thereof and a magnetic reference layer having a fixed magnetization direction substantially perpendicular to a layer plane thereof. The second plurality of MTJs represents one of two logical states and the third plurality of MTJs represents the other one of the two logical states.

Abstract: The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving multiple layers of a first transition metal with multiple layers of a second transition metal; and a first magnetic layer formed on top of the multilayered seed structure. The first magnetic layer has a multilayer structure formed by interleaving layers of the first transition metal with layers of a magnetic material and has a first fixed magnetization direction substantially perpendicular to a layer plane thereof. The first transition metal is platinum or palladium, while the second transition metal is selected from the group consisting of tantalum, titanium, zirconium, hafnium, vanadium, niobium, chromium, molybdenum, and tungsten.

Abstract: The present invention is directed to a memory device having a via landing pad in the peripheral circuit that minimizes the memory cell size. A device having features of the present invention comprises a peripheral circuit region and a magnetic memory cell region including at least a magnetic tunnel junction (MTJ) element. The peripheral circuit region comprises a substrate and a bottom contact formed therein; a landing pad including a first magnetic layer structure formed on top of the bottom contact and a second magnetic layer structure separated from the first magnetic layer structure by an insulating tunnel junction layer, wherein each of the insulating tunnel junction layer and the second magnetic layer structure has an opening aligned to each other; and a via partly embedded in the landing pad and directly coupled to the first magnetic layer structure through the openings.

Abstract: The present invention is directed to an MTJ memory element including a magnetic free layer structure which includes one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure comprising a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer with the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with the second magnetic fixed sublayer formed adjacent to the anti-ferromagnetic

Abstract: The present invention is directed to an MTJ memory element comprising a magnetic free layer structure including one or more magnetic free layers that have a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure including a first magnetic reference layer and a second magnetic reference layer with a perpendicular enhancement layer interposed therebetween, the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer.

Abstract: The present invention is directed to an STT-MRAM device comprising a plurality of memory elements. Each of the memory elements includes an MTJ structure that comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a first perpendicular enhancement layer (PEL) formed adjacent to the magnetic free layer structure; a magnetic dead layer formed adjacent to the first PEL; and a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by a second PEL. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.

Abstract: An STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer, causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.

Abstract: The present invention is directed to an STT-MRAM device comprising a plurality of memory elements. Each of the memory elements includes an MTJ structure that comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a first perpendicular enhancement layer (PEL) formed adjacent to the magnetic free layer structure; a magnetic dead layer formed adjacent to the first PEL; and a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by a second PEL. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.

Abstract: The present invention is directed to an MRAM element comprising a plurality of magnetic tunnel junction (MTJ) memory elements. Each of the memory elements comprises a magnetic reference layer structure, which includes a first and a second magnetic reference layers with a tantalum perpendicular enhancement layer interposed therebetween, an insulating tunnel junction layer formed adjacent to the first magnetic reference layer opposite the tantalum perpendicular enhancement layer, and a magnetic free layer formed adjacent to the insulating tunnel junction layer. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof.

Abstract: The present invention is directed to an MRAM element comprising a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic free layer structure has a variable magnetization direction substantially perpendicular to the layer plane thereof. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by a first non-magnetic perpendicular enhancement layer. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer plane thereof.

Abstract: The present invention is directed to an STT-MRAM device comprising a plurality of memory elements. Each of the memory elements includes an MTJ structure in between a seed layer and a cap layer. The MTJ structure includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; and a magnetic fixed layer separated from the magnetic reference layer structure by an anti-ferromagnetic coupling layer. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by an intermediate magnetic reference layer. The first, second, and intermediate magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.

Abstract: The present invention is directed to an MTJ memory element comprising a magnetic free layer structure including one or more magnetic free layers that have a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure including a first magnetic reference layer and a second magnetic reference layer with a perpendicular enhancement layer interposed therebetween, the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer.

Abstract: A memory device having features of the present invention comprises a reprogrammable memory portion including therein a first plurality of magnetic tunnel junctions (MTJs) whose resistance is switchable; and a one-time-programmable (OTP) memory portion including therein a second plurality of MTJs whose resistance is switchable and a third plurality of MTJs whose resistance is fixed. Each MTJ of the first, second, and third plurality of MTJs includes a magnetic free layer having a magnetization direction substantially perpendicular to a layer plane thereof and a magnetic reference layer having a fixed magnetization direction substantially perpendicular to a layer plane thereof. The second plurality of MTJs represents one of two logical states and the third plurality of MTJs represents the other one of the two logical states.

Abstract: The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving multiple layers of a first transition metal with multiple layers of a second transition metal; and a first magnetic layer formed on top of the multilayered seed structure. The first magnetic layer has a multilayer structure formed by interleaving layers of the first transition metal with layers of a magnetic material and has a first fixed magnetization direction substantially perpendicular to a layer plane thereof The first transition metal is platinum or palladium, while the second transition metal is selected from the group consisting of tantalum, titanium, zirconium, hafnium, vanadium, niobium, chromium, molybdenum, and tungsten.

Abstract: The present invention is directed to a spin transfer torque (STT) MRAM device having a perpendicular magnetic tunnel junction (MTJ) memory element. The memory element includes a perpendicular MTJ structure in between a non-magnetic seed layer and a non-magnetic cap layer. The MTJ structure comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween, an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure, and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. At least one of the magnetic free and reference layer structures includes a non-magnetic perpendicular enhancement layer, which improves the perpendicular anisotropy of magnetic layers adjacent thereto.

Abstract: The present invention is directed to a semiconductor memory device including a plurality of first level contacts arranged in a rectangular array with parallel columns directed along a first direction and parallel rows directed along a second direction. The rectangular array of the plurality of first level contacts have a first pitch and a second pitch along the first and second directions, respectively. The memory device further includes a first and second plurality of second level contacts formed on top of the first level contacts with the first plurality of second level contacts electrically connected to odd columns along the second direction of the first level contacts and the second plurality of second level contacts electrically connected to even columns of the first level contacts; and a first and second plurality of memory elements formed on top of the first and second plurality of second level contacts, respectively.

Abstract: The present invention is directed to a spin transfer torque (STT) MRAM device having a perpendicular magnetic tunnel junction (MTJ) memory element. The memory element includes a perpendicular MTJ structure in between a non-magnetic seed layer and a non-magnetic cap layer. The MTJ structure comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween, an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure, and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. At least one of the magnetic free and reference layer structures includes a non-magnetic perpendicular enhancement layer, which improves the perpendicular anisotropy of magnetic layers adjacent thereto.

Abstract: The present invention is directed to an MTJ memory element including a magnetic free layer structure which comprises one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure comprising a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer with the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with the second magnetic fixed sublayer formed adjacent to the anti-ferromagnetic