Abstract: A method of fabricating an image sensor includes forming a pixel array in an imaging region of a semiconductor substrate and forming a trench in a peripheral region of the semiconductor substrate after forming the pixel array. The peripheral region is on a perimeter of the imaging region. The trench is filled with an insulating material. An interconnect layer is formed after filling the trench with insulating material. A first wafer is bonded to a second wafer. The first wafer includes the interconnect layer and the semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the insulating material. A via cavity is formed through the insulating material. The via cavity extends down to a second interconnect layer of the second wafer. The via cavity is filled with a conductive material to form a via. The insulating material insulates the conductive material from the semiconductor substrate.

Abstract: An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.

Abstract: A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an M×N set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the crosstalk spectrum that is not filtered from light incident on the color filter array by the plurality of imaging filters. Other embodiments are disclosed and claimed.

Abstract: A computer-implemented method for remotely providing fonts for an electronic document comprises receiving a request to access an electronic document from a user terminal; locating an original version of the electronic document; selecting a code point encoding scheme from a plurality of code point encoding schemes based on a parameter in the request to access the electronic document; converting the original version of the electronic document to a second version of the electronic document based on the selected code point encoding scheme; and providing the second version of the electronic document to the user terminal.

Abstract: A color image sensor includes a plurality of pixel cells arranged in a pixel array. A plurality of color filters is arranged in a color filter array disposed over the pixel array. Each color filter is aligned with a corresponding underlying pixel cell. An optical isolation grid is disposed over the color filter array such that incident light is directed through the optical isolation grid prior to be being directed through the color filter array to the pixel array. The optical isolation grid includes a plurality of sidewalls arranged to define a plurality of openings in the optical isolation grid. Each opening is aligned with a corresponding color filter such that each color filter is optically isolated by the optical isolation grid to receive incident light only through a corresponding aligned one of the plurality of openings.

Abstract: An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.

Abstract: A magnetic disk drive device for rotary driving a magnetic disk may be provided. The magnetic disk drive device may include a drive motor for rotary driving the magnetic disk. The drive motor may include a motor hub which has motor hub support portion with a screw-type motor hub engaging portion, and a motor hub support surface for supporting the magnetic disk. The magnetic disk drive device may also include a clamp disk including a clamp disk support portion with a screw-type clamp disk engaging portion complementary to the motor hub engaging portion, and a clamp disk support surface for supporting the magnetic disk.

Abstract: A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element.

Abstract: An apparatus of one aspect includes a photodetector array, and a peripheral region at a periphery of the photodetector array. A thinner interconnect line corresponding to the photodetector array is disposed within one or more insulating layers. A thicker interconnect line corresponding to the peripheral region is disposed within the one or more insulating layers. Other apparatus, methods, and systems are also disclosed.

Abstract: A dual pixel-size color image sensor, including an imaging surface, for imaging of incident light, and a plurality of color pixels, each color pixel including (a) four large photosites, including two large first-color photosites sensitive to a first color of the incident light, and (b) four small photosites including two small first-color photosites sensitive to the first color of the incident light. The large and small first-color photosites are arranged such that connected regions of the imaging surface, not associated with large and/or small first-color photosites, are not continuous straight lines. A method for manufacturing a color filter array on an imaging surface of a dual pixel-size image sensor includes forming a first-color coating on first portions of the imaging surface to form large and small first-color photosites sensitive to a first color, wherein connected portions of the imaging surface, different from the first portions, are not continuous straight lines.

Abstract: An image sensor includes a pixel array with a plurality of pixels arranged in a semiconductor layer. A color filter array including a plurality of groupings of filters is disposed over the pixel array. Each filter is optically coupled to a corresponding one of the plurality pixels. Each one of the plurality of groupings of filters includes a first, a second, a third, and a fourth filter having a first, a second, the second, and a third color, respectively. A metal layer is disposed over the pixel array and is patterned to include a metal mesh having mesh openings with a size and pitch to block incident light having a fourth color from reaching the corresponding pixel. The metal layer is patterned to include openings without the metal mesh to allow the incident light to reach the other pixels.

Abstract: An image sensor includes a plurality of photosensitive devices arranged in a semiconductor substrate. A planar layer is disposed over the plurality of photosensitive devices in the semiconductor substrate. A plurality of first microlenses comprised of a lens material is arranged in first lens regions on the planar layer. A plurality of lens barriers comprised of the lens material is arranged on the planar layer to provide boundaries that define second lens regions on the planar layer. A plurality of second microlenses comprised of the lens material is formed within the boundaries provided by the plurality of lens barriers that define the second lens regions on the planar layer. The plurality of lens barriers are integrated with respective second microlenses after a reflow process of the plurality of second microlenses.

Abstract: An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.

Abstract: A backside illuminated image sensor includes a semiconductor layer having a back-side surface and a front-side surface. The semiconductor layer includes a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface of the semiconductor layer. The semiconductor layer also includes a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes that borders the pixel array region. The peripheral circuit elements emit photons. The peripheral circuit region also includes a doped semiconductor region positioned to absorb the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons.

Abstract: A dual pixel-size color image sensor, including an imaging surface, for imaging of incident light, and a plurality of color pixels, each color pixel including (a) four large photosites, including two large first-color photosites sensitive to a first color of the incident light, and (b) four small photosites including two small first-color photosites sensitive to the first color of the incident light. The large and small first-color photosites are arranged such that connected regions of the imaging surface, not associated with large and/or small first-color photosites, are not continuous straight lines. A method for manufacturing a color filter array on an imaging surface of a dual pixel-size image sensor includes forming a first-color coating on first portions of the imaging surface to form large and small first-color photosites sensitive to a first color, wherein connected portions of the imaging surface, different from the first portions, are not continuous straight lines.

Abstract: A backside illuminated image sensor includes a semiconductor layer having a back-side surface and a front-side surface. The semiconductor layer includes a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface of the semiconductor layer. The semiconductor layer also includes a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes that borders the pixel array region. The peripheral circuit elements emit photons. The peripheral circuit region also includes a doped semiconductor region positioned to absorb the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons.

Abstract: Embodiments of a pixel including a photosensitive region formed in a surface of a substrate and an overflow drain formed in the surface of the substrate at a distance from the photosensitive area, an electrical bias of the overflow drain being variable and controllable. Embodiments of a pixel including a photosensitive region formed in a surface of a substrate, a source-follower transistor coupled to the photosensitive region, the source-follower transistor including a drain, and a doped bridge coupling the photosensitive region to the drain of the source-follower transistor.

Abstract: An integrated circuit system includes a first device wafer having a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer having a second semiconductor layer proximate to a second metal layer including a second conductor is disposed within a second metal layer oxide. A frontside of the first device wafer is bonded to a frontside of the second device wafer at a bonding interface. A conductive path couples the first conductor to the second conductor through the bonding interface. A first metal EMI shield is disposed in one of the first metal oxide layer and second metal layer oxide layer. The first EMI shield is included in a metal layer of said one of the first metal oxide layer and the second metal layer oxide layer nearest to the bonding interface.

Abstract: Embodiments of a process including depositing a sacrificial layer on the surface of a substrate over a photosensitive region, over the top surface of a transfer gate, and over at least the sidewall of the transfer gate closest to the photosensitive region, the sacrificial layer having a selected thickness. A layer of photoresist is deposited over the sacrificial layer, which is patterned and etched to expose the surface of the substrate over the photosensitive region and at least part of the transfer gate top surface, leaving a sacrificial spacer on the sidewall of the transfer gate closest to the photosensitive region. The substrate is plasma doped to form a pinning layer between the photosensitive region and the surface of the substrate. The spacing between the pinning layer and the sidewall of the transfer gate substantially corresponds to a thickness of the sacrificial spacer. Other embodiments are disclosed and claimed.

Abstract: A magnetic disk drive device for rotary driving a magnetic disk may be provided. The magnetic disk drive device may include a drive motor for rotary driving the magnetic disk. The drive motor may include a motor hub which has motor hub support portion with a screw-type motor hub engaging portion, and a motor hub support surface for supporting the magnetic disk. The magnetic disk drive device may also include a clamp disk including a clamp disk support portion with a screw-type clamp disk engaging portion complementary to the motor hub engaging portion, and a clamp disk support surface for supporting the magnetic disk.