Patents by Inventor Yin-Tun Chou

Yin-Tun Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220344191
    Abstract: A wafer pod transfer assembly is provided. The wafer pod transfer assembly includes a wafer pod port to receive a wafer pod, a transfer axle coupled to the wafer pod port, a shaft receiver, a shaft coupled to the transfer axle and to the shaft receiver, a pin through the shaft receiver and through the shaft, wherein the pin comprises a first end and a second end, opposite the first end, and a pin buckle including a first loop and a second loop. The pin buckle is coupled to the pin, the first loop encircles the first end of the pin, and the second loop encircles the second end of the pin.
    Type: Application
    Filed: July 22, 2021
    Publication date: October 27, 2022
    Inventors: Chih-Wei CHOU, Sheng-Yuan Lin, Yuan-Hsin Chi, Yin-Tun Chou, Hung-Chih Wang, Yu-Chi Liu
  • Publication number: 20220301947
    Abstract: A deposition tool includes a power cable pedestal including a pedestal body with a first surface and a second surface and a guide hole that extends through the pedestal body from the first surface to the second surface, where at least a portion of a sidewall of the guide hole has a slanted surface, and where the pedestal body is formed from a first material with a melting point that is higher than a melting point of Polyoxymethylene (POM). The deposition tool includes a bushing arranged over the guide hole, where the bushing is formed from a second material with a melting point that is higher than the melting point of POM.
    Type: Application
    Filed: June 11, 2021
    Publication date: September 22, 2022
    Inventors: Chih-Wei CHOU, Yuan-Hsin CHI, Sheng-Yuan LIN, Yin-Tun CHOU, Hung-Chih WANG, Yu-Chi LIU
  • Publication number: 20220293436
    Abstract: A bonding tool includes a gas supply line that may extend directly between valves associated with one or more gas supply tanks and a processing chamber such that gas supply line is uninterrupted without any intervening valves or other types of structures that might otherwise cause a pressure buildup in the gas supply line between the processing chamber and the valves associated with the one or more gas supply tanks. The pressure in the gas supply line may be maintained at or near the pressure in the processing chamber so that gas provided to the processing chamber through the gas supply line does not cause a pressure imbalance in the processing chamber, which might otherwise cause early or premature contact between semiconductor substrates that are to be bonded in the processing chamber.
    Type: Application
    Filed: May 26, 2021
    Publication date: September 15, 2022
    Inventors: Yen-Hao HUANG, Chun-Yi CHEN, I-Shi WANG, Yin-Tun CHOU, Yuan-Hsin CHI, Sheng-Yuan LIN
  • Publication number: 20220275500
    Abstract: The present disclosure relates to exclusion rings for use in processing a semiconductor substrate in a processing chamber, such as a chemical vapor deposition chamber. The exclusion ring includes an alignment structure that cooperates with an alignment structure on a platen on which the exclusion ring will rest during processing of the wafer. The first alignment structure includes a guiding surface which promotes the reception of and positioning of the second alignment structure within the first alignment structure. Methods of utilizing the described exclusion rings are also described.
    Type: Application
    Filed: February 26, 2021
    Publication date: September 1, 2022
    Inventors: Ming-Yi SHEN, Hsin-Lin WU, Yao-Fong DAI, Pei-Yuan TAI, Chin-Wei CHEN, Yin-Tun CHOU, Yuan-Hsin CHI, Sheng-Yuan LIN
  • Publication number: 20220153574
    Abstract: A preclean process may be omitted from a eutectic bonding sequence. To remove oxide from one or more surfaces of a device wafer of a micro-electromechanical-system (MEMS) structure, a duration of an acid-based etch process in the eutectic bonding sequence may be increased relative to the duration of the acid-based etch process when the preclean process is performed. The increased duration of the acid-based etch process enables the acid-based etch process to remove the oxide from the one or more surfaces of the device wafer without the use of a preceding preclean process. This reduces the complexity and cycle time of the eutectic bonding sequence, reduces the risk of stiction between suspended mechanical components of the MEMS structure, and/or reduces the likelihood that the MEMS structure may be rendered defective or inoperable during manufacturing, which increases process yield.
    Type: Application
    Filed: November 13, 2020
    Publication date: May 19, 2022
    Inventors: Hong-Ta KUO, I-Shi WANG, Tzu-Ping YANG, Hsing-Yu WANG, Shu-Han CHAO, Hsi-Cheng HSU, Yin-Tun CHOU, Yuan-Hsin CHI, Sheng-Yuan LIN
  • Patent number: 11211354
    Abstract: In an embodiment, a system includes: a circular frame comprising a first side and a second side opposite the first side, wherein the circular frame comprises an aperture formed therethrough; an insert disposed within the aperture; a first wafer disposed over the insert; a second wafer disposed over the first wafer, wherein both the first wafer and the second wafer are configured for eutectic bonding when heated; two clamps disposed on the first side along the circular frame, wherein the two clamps are configured to contact the second wafer at respective clamp locations; and a plurality of pieces configured to secure the insert within the aperture, the plurality of pieces comprising both fixed and flexible pieces, the plurality of pieces comprising two fixed pieces disposed respectively adjacent to the clamp locations along the second side of the circular frame.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: December 28, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Hang Chang, Richard Huang, I-shi Wang, Yin-Tun Chou, Jen-Hao Liu
  • Patent number: 10957516
    Abstract: A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: March 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Han Meng, Jr-Sheng Chen, Yin-Tun Chou, Chih-Hua Chan, Lin-Ching Huang, Yu-Pei Chiang
  • Publication number: 20190164929
    Abstract: In an embodiment, a system includes: a circular frame comprising a first side and a second side opposite the first side, wherein the circular frame comprises an aperture formed therethrough; an insert disposed within the aperture; a first wafer disposed over the insert; a second wafer disposed over the first wafer, wherein both the first wafer and the second wafer are configured for eutectic bonding when heated; two clamps disposed on the first side along the circular frame, wherein the two clamps are configured to contact the second wafer at respective clamp locations; and a plurality of pieces configured to secure the insert within the aperture, the plurality of pieces comprising both fixed and flexible pieces, the plurality of pieces comprising two fixed pieces disposed respectively adjacent to the clamp locations along the second side of the circular frame.
    Type: Application
    Filed: November 28, 2018
    Publication date: May 30, 2019
    Inventors: Chih-Hang Chang, Richard Huang, I-Shi Wang, Yin-Tun Chou, Jen-Hao Liu
  • Publication number: 20180286634
    Abstract: A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.
    Type: Application
    Filed: June 5, 2018
    Publication date: October 4, 2018
    Inventors: Chin-Han Meng, Jr-Sheng Chen, Yin-Tun Chou, Chih-Hua Chan, Lin-Ching Huang, Yu-Pei Chiang
  • Patent number: 9997336
    Abstract: A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.
    Type: Grant
    Filed: April 26, 2016
    Date of Patent: June 12, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Han Meng, Jr-Sheng Chen, Yin-Tun Chou, Chih-Hua Chan, Lin-Ching Huang, Yu-Pei Chiang
  • Publication number: 20170309500
    Abstract: A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.
    Type: Application
    Filed: April 26, 2016
    Publication date: October 26, 2017
    Inventors: Chin-Han Meng, Jr-Sheng Chen, Yin-Tun Chou, Chih-Hua Chan, Lin-Ching Huang, Yu-Pei Chiang