Patents by Inventor Yin Wang

Yin Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240093070
    Abstract: An adhesive composition is provided. The adhesive composition comprises the following components: (a) a polyacid polymer aqueous dispersion, wherein the polyacid polymer contains 50%˜100% by weight of one or more ethylenically unsaturated mono- or dicarboxylic acid/anhydrides; (b) a hydroxyl group-containing acrylic copolymer emulsion, wherein the hydroxyl group-containing acrylic copolymer is obtained from polymerizing a monomer mixture which contains 0.1-10% hydroxyl group-containing monomer, 0.1% to 20% weight unsaturated carboxylic acid and 30%-90% acrylic monomer, wherein the solid weight ratio of the above components (a) and (b) is 0.1:100 to 10:100, based on the solids of the components (a) and (b).
    Type: Application
    Filed: November 13, 2019
    Publication date: March 21, 2024
    Inventors: Yin Xue, Xinhong Wang, Zhenbing Chen, Zhaohui Qu
  • Patent number: 11933724
    Abstract: Disclosed are a device of complex gas mixture detection based on optical-path-adjustable spectrum detection and a method therefor, and the device includes: a light source configured for generating an incident beam and emitting the incident beam into an optical gas cell; the optical gas cell, including a cavity configured for accommodating a gas sample, and a reflection module group configured for reflecting the incident beam and a track arranged in the cavity, where the track is consistent with a light path of the light beam in the cavity; a detector module that is connected with the track in a relatively movable manner and is configured for receiving light beams and obtaining spectral data, where an optical path is changed by moving the detector module relative to the track; and a data acquisition unit that is configured for acquiring the spectral data obtained by the detector module.
    Type: Grant
    Filed: December 1, 2023
    Date of Patent: March 19, 2024
    Assignee: Hubei University of Technology
    Inventors: Yin Zhang, Xiaoxing Zhang, Ran Zhuo, Zhiming Huang, Guozhi Zhang, Dibo Wang, Shuangshuang Tian, Mingli Fu, Yunjian Wu, Yan Luo, Shuo Jin, Jinyu Pu, Yalong Li
  • Publication number: 20240083994
    Abstract: Provided are a cell strain for producing a biosimilar drug of Ustekinumab and a production method therefor. Specifically, provided is a Chinese hamster ovary cell S cell strain. The cell strain expresses a full human monoclonal antibody directed against the P40 subunit shared by human IL-12 and human IL-23. The fully human monoclonal antibody directed against the P40 subunit shared by human IL-12 and human IL-23 is a biosimilar drug of Ustekinumab, which not only exhibits high consistency with Ustekinumab in pre-clinical research, but also passes pharmacokinetic bioequivalence and safety similarity evaluation in clinical research. The biosimilar drug of Ustekinumab is the first one that has entered clinical trials in China, is the only one that has completed the I stage clinical trial, and is also one of the biosimilar drugs of Ustekinumab, which has the fastest progress in new drug application in the world.
    Type: Application
    Filed: March 23, 2021
    Publication date: March 14, 2024
    Applicant: QYUNS THERAPEUTICS CO., LTD.
    Inventors: Zhengxue XU, Tao LI, Yin CHEN, Wenjun HUANG, Yi WANG, Huaiyao QIAO, Min FANG, Yiliang WU, Mengdan ZHANG
  • Publication number: 20240084575
    Abstract: An architectural fiducial structure and a construction method using the same are provided. The construction method includes: providing a first fiducial structure, wherein the fiducial structure has a first portion extending along a first direction, a second portion extending along a second direction and a precasting column structure, and wherein the first direction and the second direction forms an angle; providing a first shear wall extending along the first direction and connecting a first end of the first shear wall to the first portion of the first fiducial structure; and providing a second shear wall extending along the second direction and connecting a first end of the second shear wall to the second portion of the first fiducial structure.
    Type: Application
    Filed: September 1, 2023
    Publication date: March 14, 2024
    Inventors: Samuel YIN, Jui-Chen WANG, Jhih-Syuan CHEN
  • Publication number: 20240088225
    Abstract: A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.
    Type: Application
    Filed: November 14, 2023
    Publication date: March 14, 2024
    Inventors: Su-Hao Liu, Wen-Yen Chen, Li-Heng Chen, Li-Ting Wang, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo, Ying-Lang Wang
  • Publication number: 20240077479
    Abstract: A detection system and method for the migrating cell is provided. The system is configured to detect a migrating cell combined with an immunomagnetic bead. The system includes a platform, a microchannel, a magnetic field source, a coherent light source and an optical sensing module. The microchannel is configured to allow the migrating cell to flow in it along a flow direction. The magnetic field source is configured to provide magnetic force to the migrating cell combined with the immunomagnetic bead. The magnetic force includes at least one magnetic force component and the magnetic force component is opposite to the flow direction of the microchannel. The coherent light source is configured to provide the microchannel with the coherent light. The optical sensing module is configured to receive the interference light caused by the coherent light being reflected by the sample inside the microchannel.
    Type: Application
    Filed: August 10, 2023
    Publication date: March 7, 2024
    Applicant: DeepBrain Tech. Inc
    Inventors: Han-Lin Wang, Chia-Wei Chen, Yao-Wen Liang, Ting-Chun Lin, Yun-Ting Kuo, You-Yin Chen, Yu-Chun Lo, Ssu-Ju Li, Ching-Wen Chang, Yi-Chen Lin
  • Publication number: 20240081157
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.
    Type: Application
    Filed: November 6, 2023
    Publication date: March 7, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Publication number: 20240076187
    Abstract: The present invention provides a preparation method of a battery composite material, wherein a precursor with the chemical formula FePO4 is formed by introducing air or oxygen during calcination. The precursor is then reacted with a first reactant containing lithium atoms and a carbon source to form a battery composite material with the chemical formula LiFePO4.
    Type: Application
    Filed: August 29, 2023
    Publication date: March 7, 2024
    Inventors: KUAN-YIN FU, Jing-Xuan Wang, An-Feng Huang
  • Publication number: 20240079239
    Abstract: A method includes implanting impurities in a semiconductor substrate to form an etch stop region within the semiconductor substrate; forming a transistor structure on a front side of the semiconductor substrate; forming a front-side interconnect structure over the transistor structure; performing a thinning process on a back side of the semiconductor substrate to reduce a thickness of the semiconductor substrate, wherein the thinning process is slowed by the etch stop region; and forming a back-side interconnect structure over the back side of the semiconductor substrate.
    Type: Application
    Filed: January 10, 2023
    Publication date: March 7, 2024
    Inventors: Bau-Ming Wang, Liang-Yin Chen, Wei Tse Hsu, Jung-Tsan Tsai, Ya-Ching Tseng, Chunyii Liu
  • Publication number: 20240072128
    Abstract: A method of forming a semiconductor device includes forming a source/drain region and a gate electrode adjacent the source/drain region, forming a hard mask over the gate electrode, forming a bottom mask over the source/drain region, wherein the gate electrode is exposed, and performing a nitridation process on the hard mask over the gate electrode. The bottom mask remains over the source/drain region during the nitridation process and is removed after the nitridation. The method further includes forming a silicide over the source/drain region after removing the bottom mask.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 29, 2024
    Inventors: Tsan-Chun Wang, Su-Hao Liu, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo
  • Publication number: 20240072115
    Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.
    Type: Application
    Filed: February 13, 2023
    Publication date: February 29, 2024
    Inventors: Wei-Xiang You, Wei-De Ho, Hsin Yang Hung, Meng-Yu Lin, Hsiang-Hung Huang, Chun-Fu Cheng, Kuan-Kan Hu, Szu-Hua Chen, Ting-Yun Wu, Wei-Cheng Tzeng, Wei-Cheng Lin, Cheng-Yin Wang, Jui-Chien Huang, Szuya Liao
  • Publication number: 20240074328
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 29, 2024
    Applicant: United Microelectronics Corp.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Publication number: 20240067845
    Abstract: A waterborne coating composition, comprising (a) a first polyurethane dispersion comprising a first polyurethane having a Tg of 5° C. to 20° C., (b) a second polyurethane dispersion comprising a second polyurethane having a Tg of ?40° C. to ?60° C., and (c) a polyacrylic emulsion comprising an acrylic (co) polymer having a Tg of ?40° C. to ?20° C., is provided. A method for preparing a laminated material with the waterborne coating composition, and a laminated material prepared therefrom are also provided.
    Type: Application
    Filed: February 2, 2021
    Publication date: February 29, 2024
    Inventors: Chenyan Bai, Yin Xue, Xinhong Wang, Wenxin Zhang
  • Publication number: 20240071626
    Abstract: Embodiments of the present disclosure relate to automated validation of medical data. Some embodiments of the present disclosure provide a method for medical data validation. The method comprises obtaining target medical data generated in a medical test and obtaining a machine learning model for validating medical data. The machine learning model represents an association between the medical data and validation results, the validation results indicating information about predetermined actions to be performed on the medical data. The method further comprises determining a target validation result for the target medical data by applying the target medical data to the machine learning model, the target validation result indicating information about a target action selected from the predetermined actions to be performed on the target medical data. Through the solution, it is possible to achieve automated medical data validation with high accuracy and efficiency as well as reduced manual efforts.
    Type: Application
    Filed: August 26, 2022
    Publication date: February 29, 2024
    Applicants: Roche Diagnostics Operations, Inc., Qilu Hospital of Shandong University
    Inventors: Daquan Liu, Yin Qian, Xiaojun Tao, Hongchun Wang, Weibin Xing, Chenxi Zhang, Yi Zhang, Qi Zhou
  • Publication number: 20240067782
    Abstract: An aluminum borate whisker reinforced and toughened non-metallic matrix composite is provided, which specifically includes a non-metallic material reinforced and toughened with aluminum borate whiskers. The composite exhibits a higher bending strength and fracture toughness and a higher wear resistance. A method for preparing the composite is also provided. The method includes mixing the aluminum borate whiskers and the non-metallic material to form a mixture; and sintering the mixture by a vacuum hot press method, or molding the mixture.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 29, 2024
    Inventors: Yue Shi, Bi Jia, Jinliang Shi, Zhigang Zou, Yong Zhou, Yongjiang Di, Yin Liu, Huichao He, Rong Wang, Xueyi Wang, Hao Tian, Jun Zhu, Rui Tang, Xingyu Chen, Danxia Zhang
  • Patent number: 11917923
    Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.
    Type: Grant
    Filed: April 28, 2021
    Date of Patent: February 27, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Ching-Hua Hsu, Si-Han Tsai, Shun-Yu Huang, Chen-Yi Weng, Ju-Chun Fan, Che-Wei Chang, Yi-Yu Lin, Po-Kai Hsu, Jing-Yin Jhang, Ya-Jyuan Hung
  • Publication number: 20240033317
    Abstract: The present invention relates to treating TP53-mutated AML using a Hypoxia-Inducible Factor (HIF inhibitor). The invention further relates to a new HIF inhibitor formulation with longer half-life and significantly improved therapeutic effect for TP53-mutated AML.
    Type: Application
    Filed: February 12, 2021
    Publication date: February 1, 2024
    Inventors: Yang LIU, Yin WANG, Yan LIU, Christopher BAILEY
  • Publication number: 20240014042
    Abstract: A semiconductor device includes a fin, first source/drain regions, second source/drain regions, a first nanosheet, a second nanosheet and a metal gate structure. The fin extends in a first direction and protrudes above an insulator. The first source/drain regions are over the fin. The second source/drain regions are over the first source/drain regions. The first nanosheet extends in the first direction between the first source/drain regions. The second nanosheet extends in the first direction between the second source/drain regions. The metal gate structure is over the fin and between the first source/drain regions. The metal gate structure extends in a second direction different from the first direction from a first sidewall to a second sidewall. A first distance in the second direction between the first nanosheet and the first sidewall is smaller than a second distance in the second direction between the first nanosheet and the second sidewall.
    Type: Application
    Filed: July 10, 2022
    Publication date: January 11, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Meng-Yu Lin, Chun-Fu Cheng, Cheng-Yin Wang, Yi-Bo Liao, Szuya Liao
  • Publication number: 20240002262
    Abstract: The present invention is directed at functionalized layered double hydroxides, including methods of their preparation, that are suitable for treatment of water contaminated with per- and polyfluoroalkyl substances.
    Type: Application
    Filed: June 29, 2023
    Publication date: January 4, 2024
    Inventors: Shangping Xu, Yin Wang, Jingwan Huo
  • Patent number: D1016050
    Type: Grant
    Filed: July 20, 2022
    Date of Patent: February 27, 2024
    Assignee: Beijing Xiaomi Mobile Software Co., Ltd.
    Inventors: Shanna Wang, Zhen Wang, Xu Wei, Yin Zhu