Abstract: A semiconductor device includes a first metal layer, a second metal layer, and an inter-metal dielectric layer disposed between the first metal layer and the second metal layer. The inter-metal dielectric layer includes: a first dielectric layer disposed on the first metal layer and in direct contact with the first metal layer, wherein the first dielectric layer has a stress value less than 0; a second dielectric layer disposed on the first dielectric layer, wherein the second dielectric layer has a stress value greater than 0; and a third dielectric layer disposed on the second dielectric layer, wherein the third dielectric layer has a stress value less than 0. A thickness of the third dielectric layer is greater than a thickness of the second dielectric layer, and the thickness of the second dielectric layer is greater than a thickness of the first dielectric layer.

Abstract: A semiconductor device includes a semiconductor substrate, ground level circuitry, a plurality of stacked memory arrays and a plurality of sense amplifier units. The ground level circuitry is disposed on the semiconductor substrate. The stacked memory arrays are disposed at an elevated level over the ground level circuitry. The sense amplifier units are disposed on the semiconductor substrate and electrically coupled to the stacked memory arrays, wherein at least a portion of each of the sense amplifier units is disposed at the elevated level over the ground level circuitry.

Abstract: In method of manufacturing a semiconductor device, a source/drain epitaxial layer is formed, one or more dielectric layers are formed over the source/drain epitaxial layer, an opening is formed in the one or more dielectric layers to expose the source/drain epitaxial layer, a first silicide layer is formed on the exposed source/drain epitaxial layer, a second silicide layer different from the first silicide layer is formed on the first silicide layer, and a source/drain contact is formed over the second silicide layer.

Abstract: Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process: 0 ? ? ? T ? ? 1 T ? ? 2 ? A ? ( T ) ? dT - ? T ? ? 1 T ? ? 3 ? E ? ( T ) ? dT ? ? < 0.01 wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

Abstract: An electronic package is provided. The electronic package includes a power regulating component, an electronic component, and a circuit structure. The circuit structure separates the power regulating component and the electronic component. The circuit structure is configured to provide a first power to the power regulating component. The power regulating component is configured to provide a second power to the electronic component through the circuit structure.

Abstract: An apparatus (e.g., an access point (AP) or a non-AP station (STA)) detects a non-primary subband of an operating bandwidth comprising a primary subband and the non-primary subband to be idle. The apparatus controls a transmit power in performing transmission on at least the non-primary subband.

Abstract: A method for fabricating a semiconductor device having a substantially undoped channel region includes forming a plurality of fins extending from a substrate. In various embodiments, each of the plurality of fins includes a portion of a substrate, a portion of a first epitaxial layer on the portion of the substrate, and a portion of a second epitaxial layer on the portion of the first epitaxial layer. The portion of the first epitaxial layer of each of the plurality of fins is oxidized, and a liner layer is formed over each of the plurality of fins. Recessed isolation regions are then formed adjacent to the liner layer. The liner layer may then be etched to expose a residual material portion (e.g., Ge residue) adjacent to a bottom surface of the portion of the second epitaxial layer of each of the plurality of fins, and the residual material portion is removed.

Abstract: A plant protein-based triboelectric nanogenerator (TENG), and a fabrication method and use thereof are provided. The TENG includes a triboelectric negative layer and a protein film, where the protein film and the triboelectric negative layer are stacked surface-to-surface; and an electrode is adhered to or plated on a back surface of each of the protein film and the triboelectric negative layer, or only a back surface of either of the protein film and the triboelectric negative layer is provided with a grounded electrode. A protein powder is dissolved in water or an ethanol aqueous solution, then a plasticizing agent is added, and the protein is denatured through thermal treatment to obtain an extended structure required for film formation; and the solvent is evaporated, and a resulting product is dried to obtain the protein film with uniform texture and excellent transparency and flexibility. The TENG is used in crop growth.

Abstract: A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.

Abstract: Processes and systems are provided for aggregating whey protein including preparing a whey protein solution containing native whey protein, adjusting the pH of the whey protein solution, denaturing at least a portion of the native whey protein, separating the denatured material and processing the denatured material by shearing to form whey protein aggregates. Also provided are whey protein aggregates and uses thereof, such as in the production of dairy products or in cheesemaking.

Abstract: The disclosure discloses a layout structure of an eFuse unit, comprising pad, link, and shield, wherein: a pad is respectively disposed on both ends of the link in a length direction; the shield and the link are at the same metal layer; the shield comprises a plurality of independent metal wires; the plurality of independent metal wires are arranged on both sides of the link; the length of each independent metal wire is greater than the width thereof; and a length direction of each independent metal wire is perpendicular to the length direction of the link. The disclosure not only forms a barrier protection layer for preventing burst metal spraying from affecting other circuits, but also can prevent spayed metal from reflecting back and connecting to a broken link, so as to improve the programming reliability of the eFuse unit.

Abstract: The present invention discloses an organic polymer film and a manufacturing method thereof. The organic polymer film is mainly manufactured by the following steps. Firstly, the step (A) provides a xylene precursor and a substrate, and the step (B) places the substrate inside of a plasma equipment. After that, the step (C) evacuates the plasma equipment while introducing a carrier gas which carries vapor of the xylene precursor, and the step (D) turns on a pulse power supply system of the plasma equipment, generating a short pulse for plasma ignition. Finally, the step (E) forms the organic polymer film on the substrate. In the aforementioned steps, the frequency of the short pulse plasma is between 1 Hz˜10,000 Hz, and the pulse period of the short pulse plasma is between 1 ?s˜60 ?s.

Abstract: An augmented reality system generates computer-mediated reality on a client device. The client device has sensors including a camera configured to capture image data of an environment. The augmented reality system generates a first 3D map of the environment around the client device based on captured image data. The server receives image data captured from a second client device in the environment and generates a second 3D map of the environment. The server links the first and second 3D together in a singular 3D map. The singular 3D map may be a graphical representation of the real world using nodes that represent 3D maps generated by image data captured at client devices and edges that represent transformations between the nodes.

Abstract: The present disclosure discloses a method for quantifying a bearing capacity of foundation containing shallow-hidden spherical cavities, comprising: in Step 1, constructing a spatial axisymmetric calculation model for stability analysis of the foundation containing shallow-hidden spherical cavities; in Step 2, solving the model to obtain a general solution which reflects the spatial stress distribution of surrounding rock containing shallow-hidden spherical cavities; in Step 3, obtain a mathematical expression by derivation for calculating the bearing capacity of the foundation containing shallow-hidden spherical cavities; and in Step 4: completing the determination of the foundation bearing capacity. Benefits: This method has many advantages such as comprehensive consideration, high accuracy and reliability of calculation results, and may provide the scientific basis for the development of prevention and control against the instability of the foundation containing shallow-hidden cavities.

Abstract: The present invention provides an artificial dressing and a use of the artificial dressing for promoting wound healing. The artificial dressing includes a gelatin and a fungal extract.

Abstract: This application provides a face living body detection method performed by a computing device, the method including: obtaining a first face image of a target detection object in a first illumination condition and a second face image of the target detection object in a second illumination condition, determining a difference image according to the two images, decoupling an object reflectivity and an object normal vector corresponding to the target detection object from a feature map extracted from the difference image, and determining whether the target detection object is a living body according to the object reflectivity and the object normal vector. This method decouples texture information and depth information of a face, and performs living body detection by using decoupled information, which increases the defense capability against 3D attacks, thereby effectively defending against planar attacks and 3D attacks.

Abstract: The present application disclosures a double production line and a rapid prefabrication process of a segmental beam. The double production line including two production machine and a track system provided on the construction ground; the production machine includes a fixed end mold, two side molds, a bottom mold trolley, a middle internal mold trolley and two side internal mold trolley; two side molds are positioned on two sides of the fixed end mold respectively, the fixed end mold and two side molds together define a pouring position with an end opening, two openings of the pouring position are arranged facing each other; the track system includes a transverse track and a longitudinal track communicated with each other, two pouring positions are both positioned in the extension path of the transverse track, and the longitudinal track is positioned between two pouring positions.