Abstract: A user equipment (UE) includes receiving circuitry configured to receive a radio resource control (RRC) message comprising first information used for indicating a maximum number of Hybrid Automatic Repeat Request (HARQ) processes for reduced capability, the maximum number being no more than 8. The receiving circuitry receives an RRC message comprising second information used for indicating limited buffer rate matching is applied to Physical Uplink Shared Channel (PUSCH) transmission for reduced capability. The receiving circuitry also receives an RRC message comprising third information used for indicating a Modulation and Coding Scheme (MCS) limitation for reduced capability. The receiving circuitry receives an RRC message comprising fourth information used for indicating a MCS table for reduced capability.

Abstract: Provided are a screenshot method, an electronic device and a storage medium. In the method, in response to a screenshot operation, a screenshot of each of multiple display windows displayed on a screen is separately acquired as a first screenshot, to obtain first screenshots of the multiple display windows. At least one second screenshot, each being a screenshot of at least two display windows of the multiple of display windows, is acquired. The first screenshot and the at least one second screenshot are displayed in a preview mode. In response to a selection operation for a target screenshot of the screenshots displayed in the preview mode, the target screenshot is saved. (FIG.

Abstract: Processes and for converting a hydrocarbon-containing feed by pyrolysis and gasification/combustion. The hydrocarbon-containing feed can be heated to produce a heated feed that can be separated into a vapor and a liquid. At least a portion of the vapor and/or at least a portion of the liquid and a particle stream can be fed into a pyrolysis zone and contacted therein to effect pyrolysis of the hydrocarbons and produce a pyrolysis effluent.

Abstract: A medical device includes a shaft, an end cap, and an electrode. The shaft includes a conductive element. The end cap is coupled to a distal end of the shaft. The electrode is coupled to the distal end of the shaft and passes through the end cap. The electrode includes an electrode shaft and a distal tip, and the electrode is electrically connected to the conductive element. The end cap includes a visualization feature.

Abstract: A memory access method and device are provided for a Non-Uniform Memory Access (NUMA) system including nodes, each node configured to run a predetermined program and including a preset memory allocated for the predetermined program, where a same global physical address corresponds to each of the preset memories of each of the nodes, respectively, the method including: performing an operation on a first preset memory local to a first node of the nodes when the predetermined program is running on the first node; and synchronizing the operation performed on the first preset memory to each preset memory local to each of the nodes, respectively, where each of the nodes is configured to access its local preset memory using the same global physical address when running the predetermined program on the node.

Abstract: A computer-implemented method for determining an adversarial perturbation for input signals, especially sensor signals or features of sensor signals, of a machine learning system. A best perturbation is determined iteratively, wherein the best perturbation is provided as adversarial perturbation after a predefined amount of iterations, wherein at least one iteration includes: sampling a perturbation; applying the sampled perturbation to an input signal thereby determining a potential adversarial example; determining an output signal from the machine learning system for the potential adversarial example, determining a loss value characterizing a deviation of the output signal to a desired output signal, wherein the desired output signal corresponds to the input signal, if the loss value is larger than a previous loss value setting the best perturbation to the sampled perturbation.

Abstract: This application provides a packaging method and apparatus for a point cloud media file, a device and a storage medium. The method includes acquiring target point cloud; encoding the target point cloud to obtain an alternative group of the target point cloud, the alternative group comprising N interchangeable media tracks, and N being an integer greater than 1; adding quality indication information into at least one media track among the N media tracks to obtain a media file of the target point cloud, the quality indication information indicating quality of the media track; and packing the media file with first information, the first information indicating quality information of at least one media track among the N media tracks.

Abstract: A method for manufacturing a semiconductor device includes the following steps. A transition metal layer is formed over a substrate in a reaction chamber; a chalcogen-containing fluid is flowed into the reaction chamber; and a heating process is performed in the reaction chamber over the transition metal layer with the chalcogen-containing fluid to transform the transition metal layer into a two-dimensional (2D) material layer over the substrate.

Abstract: Disclosed is a semiconductor device and semiconductor fabrication method. A semiconductor device includes: a gate structure over a semiconductor substrate, having a low-k dielectric layer, a high-k dielectric layer, a p-type work function metal layer, an n-type work function metal layer, a silicon oxide scap layer, and a glue layer; and a continuous tungsten (W) cap over the gate structure that was formed by the gate structure being pretreated, W material being deposited and etched back, the scap layer being etched, additional W material being deposited, and unwanted W material being removed. A semiconductor fabrication method includes: receiving a gate structure; pretreating the gate structure; depositing W material on the gate structure; etching back the W material; etching the scap layer; depositing additional W material; and removing unwanted W material.

Abstract: Techniques are provided herein to form semiconductor devices on a substrate with an alternative crystallographic surface orientation. The techniques are particularly useful with respect to gate-all-around and forksheet transistor configurations. A substrate having a (110) crystallographic surface orientation forms the basis for the growth of alternating types of semiconductor layers. Both n-channel and p-channel transistors may be fabricated using silicon nanoribbons formed from some of the alternating semiconductor layers. The crystallographic surface orientation of the Si nanoribbons will reflect the same crystallographic surface orientation of the substrate, which leads to a higher hole mobility across the Si nanoribbons of the p-channel devices and an overall improved CMOS device performance.

Abstract: Disclosed is an electrical discharge machining apparatus at least comprising a carrier platform and an electrical discharge machining unit. The carrier platform is used to carry at least one to-be-machined object. The electrical discharge machining unit comprises an electrode, a jig and a power supply unit. When the electrical discharge machining unit performs an electrical discharge machining procedure on a machined target area of the to-be-machined object along a machining direction, an electrical discharge section of the electrode and the machined target area of the to-be-machined object move relatively. The invention is capable of improving a machining procedure, saving an overall machining time and saving a time required for electrode replacement.

Abstract: A method of forming a semiconductor device includes the following steps. A metal layer with at least one silicon-containing pattern therein is provided. A first wet etching process is performed by using a first etching solution, to clean a surface of the metal layer, wherein the first etching solution contains a base and a first oxidant. At least one cycle is performed. Each cycle includes a second wet etching process and a cleaning process. The second wet etching process is performed by using a second etching solution, to remove the metal layer, wherein the second etching solution contains an acid and a second oxidant. A cleaning process is performed.

Abstract: The invention relates to distributed ledger technologies such as consensus-based blockchains. Computer-implemented methods for locking blockchain transactions are described. The invention is implemented using a blockchain network. A first locking script is configured in a blockchain network. The first locking script is executed together with a first unlocking script, based on data obtained by executing the first unlocking script and a set of constraints. Verification that a first set of field values of the unlocking blockchain transaction is obtained by executing the first unlocking script and the set of constraints against the unlocking blockchain transaction. Validating the unlocking blockchain transaction according to the set of constraints. Finally, making the locking blockchain transaction available to one or more nodes of the blockchain network.

Abstract: This application provides encapsulation and decapsulation methods and apparatuses for a point cloud media file, and a storage medium. The methods comprises acquiring a target point cloud and encoding the target point cloud to obtain a bitstream, the target point cloud comprising at least one type of attribute information, each type of attribution information comprising M attribute instances of instance data, and M being a positive integer greater than 1; and encapsulating the bitstream of the target point cloud according to first feature information of at least one attribute instance of M attribute instances to obtain a media file, the media file comprising the first feature information of the at least one attribute instance.

Abstract: A method and apparatus for carrier aggregation is disclosed. In one embodiment, a method performed by a first wireless communication node, comprising: receiving a downlink signal containing first information from a second wireless communication node, and based on at least a portion of the first information, determining first resource information to perform sidelink communication between the first wireless communication node and at least one third wireless communication node.

Abstract: Disclosed is a method comprising: providing at least two structures with a metal layer over each; forming a patterned photolithographic layer over the metal layer over the first structure; removing the metal layer from the second structure via wet etch operations using a chemical etchant that is resistant to penetration into the photolithographic layer; and achieving, after wet etch operations, a remaining metal ratio of a distance X over a distance Y that is less than 179 and greater than 1, wherein X is the distance from a first line extending from an edge of the metal layer over the first structure to a second line extending from an edge of a channel region in the second structure, and Y is a second distance from the first line to a third line extending from an edge of the metal layer formed over the channel region in the first structure.

Abstract: Techniques are provided herein to form non-planar semiconductor devices in a stacked transistor configuration adjacent to stressor materials. In one example, an n-channel device and a p-channel device may both be gate-all-around transistors each having any number of nanoribbons extending in the same direction, where the n-channel device is located vertically above the p-channel device (or vice versa). Source or drain regions are adjacent to both ends of the n-channel device and both ends of the p-channel device. On the opposite side of the stacked source or drain regions (e.g., opposite from the nanoribbons), stressor materials may be used to fill the gate trench in place of additional semiconductor devices. The stressor materials may include, for instance, a compressive stressor material adjacent to the p-channel device and/or a tensile stressor material adjacent to the n-channel device. The stressor material(s) may form or otherwise be part of a diffusion cut structure.

Abstract: Disclosed is a particle algorithm-based method for underwater detection and operation positioning of a reservoir dam system. A water body is stimulated by adopting a smoothed particle hydrodynamics (SPH) method, the ROV is simulated by adopting a discrete element method (DEM) unit formed by a series of particles, an umbilical cable between the ROV and a water surface control unit are simulated by a spring unit, dynamic interaction among the ROV, water flow and the cable are calculated by combining the SPH method and the DEM, and real-time motion positions of the ROV and the cable in complex environments are calculated and obtained; and a relative position between the ROV and the surface control unit can be calculated through the real-time position of the cable, and the real-time underwater positioning of the ROV is realized in combination with an absolute coordinate position of the surface control unit.

Abstract: The subject matter of the present disclosure generally relates to techniques for neuromodulation of a tissue that include applying energy (e.g., ultrasound energy) into the tissue to cause altered activity at a synapse between a neuron and a non-neuronal cell.

Abstract: A method of compressing digital image data is provided that includes selecting an entropy code for encoding a line of pixels in the digital image data, wherein the entropy code is selected from a plurality of variable length entropy codes, using spatial prediction to compute a pixel predictor and a pixel residual for a pixel in the line of pixels, and selectively encoding the pixel residual using one of the entropy code or run mode encoding.