Abstract: The embodiments of the disclosure provide an analysing method for gratings, an electronic device, and a computer readable storage medium. The method includes: determining candidate gratings; determining grating combinations based on the candidate gratings, wherein each of the grating combinations includes at least one of the candidate gratings, and the at least one of the candidate gratings in each grating combination is different from each other; determining a first diffraction response map of a first multiplexing grating corresponding to a first grating combination of the grating combinations; determining a first luminous intensity map of the first multiplexing grating corresponding to the first grating combination via modifying the first diffraction response map based on at least one parameter of a light engine; and determining a first reconstruction image corresponding to the light engine via processing a template image based on the first luminous intensity map.

Abstract: A semiconductor device includes a fin structure that protrudes vertically out of a substrate, wherein the fin structure contains silicon germanium (SiGe). An epi-silicon layer is disposed on a sidewall of the fin structure. The epi-silicon layer contains nitrogen. One or more dielectric liner layers are disposed on the epi-silicon layer. A dielectric isolation structure is disposed over the one or more dielectric liner layers.

Abstract: An electronic device includes: a substrate; a color filter layer disposed on the substrate, wherein the color filter layer includes a light shielding unit and a plurality of color filter units adjacent to the light shielding unit, and the plurality of color filter units includes a first color filter unit, a second color filter unit and a third color filter unit; and a first refractive index-matching layer disposed between the substrate and the color filter layer, wherein the first refractive index-matching layer comprises an opening, and the opening and at least one of the light shielding unit, the first color filter unit, the second color filter unit and the third color filter unit are overlapped in a top view of the substrate.

Abstract: Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.

Abstract: An analysis cartridge and an analysis method, the analysis cartridge includes a first cover, a second cover, containers, a fluid tunnels and a rotary valve. The second cover has two opposite surfaces, a plurality of first through holes and a second through hole individually penetrate through the two opposite surfaces, and the first cover is attached to the second cover. The plurality of containers are disposed between the first cover and the second cover, with each of the containers being aligned to and filled in the first through holes. The plurality of the fluid tunnels is disposed on the first cover, and each of which is individually connected with a first pipette. The rotary valve is rotably disposed between the first cover and the second cover to correspond to the second through hole, and a flow channel disposed on the rotary valve is connected with the containers individually.

Abstract: A backlight module and a display device are provided, and the backlight module includes: a substrate; a plurality of light-emitting elements arranged in an array on the substrate; and a reflective supporting structure on the substrate, wherein the reflective supporting structure has a plurality of openings, the plurality of openings correspond to the plurality of light-emitting elements one-to-one, and each of the plurality of light-emitting elements is accommodated in one of the plurality of openings, wherein the reflective supporting structure is configured to reflect light from the plurality of light-emitting elements, so that an angle between an exit direction of the reflected light and a first direction perpendicular to the substrate is less than a predetermined angle.

Abstract: The present disclosure relates to methods, systems, and apparatuses for providing electronic communications to client devices based on clustering and filtering candidates for inclusion in the electronic communications based on programmatically generated correlation metrics and thresholds associated with the clustering.

Abstract: In an embodiment, a method includes: etching a trench in a substrate; depositing a liner material in the trench with an atomic layer deposition process; depositing a flowable material on the liner material and in the trench with a contouring flowable chemical vapor deposition process; converting the liner material and the flowable material to a solid insulation material, a portion of the trench remaining unfilled by the solid insulation material; and forming a hybrid fin in the portion of the trench unfilled by the solid insulation material.

Abstract: A method of forming a semiconductor device includes etching trenches in a substrate to form fin structures, depositing a liner layer to line the trenches, filling the trenches with an insulating layer, performing an ion implantation process to the insulating layer, after performing the ion implantation process, recessing the insulating layer to form shallow trench isolation (STI) regions adjacent the fin structures, and forming a gate crossing the fin structures.

Abstract: An IC device includes first through third active areas extending in a first direction and a first gate structure extending perpendicular to and overlying each of the first through third active areas. Each of the first through third active areas includes a first portion adjacent to the first gate structure in the first direction and a second portion adjacent to the first portion and including an endpoint of the corresponding active area, the first active area is positioned between the second and third active areas and includes the endpoint positioned under the first gate structure, and each of the second and third active areas includes the endpoint positioned away from the gate structure in a second direction opposite to the first direction.

Abstract: An ESD protection device protects a circuit from TLPs between a first terminal and a second terminal. The device includes an NPN discharge structure and a PNP triggering device. The first terminal is coupled to the p-doped emitter and the n-doped base of the PNP triggering device and also the n-doped emitter of the NPN discharge structure. The second terminal is coupled to the n-doped collector of the NPN discharge structure. The p-doped collector of the PNP triggering device is coupled to the p-doped base of the NPN discharge structure. A TLP causes base-collector junction breakdown in the PNP triggering device, which results in a current through the PNP triggering device. That current is injected into the base of the NPN discharge structure, which results in a larger discharge current through the NPN discharge structure. The device provides high holding voltage ESD protection device with snapback.

Abstract: The present invention is for an acidic cleaning composition which has excellent cleaning performance, low toxicity and good antimicrobial efficacy. The inventive acidic cleaning compositions are capable of sanitizing or disinfecting a variety of hard surfaces. The inventive acidic cleaning compositions can take a variety of forms, such as: disinfecting wipes, all-purpose disinfecting sprays, kitchen cleaners, bathroom cleaners, toilet cleaners, etc. The inventive acidic cleaning compositions have good cleaning properties and low residue.

Abstract: A semiconductor device includes a first power rail configured to supply a first voltage, a second power rail configured to supply a second voltage different from the first voltage, and a first cell arranged in a first row between the first and second power rails. The first cell has a first first-type active region and a first second-type active region. The semiconductor device further includes a second cell having a second first-type active region and a second second-type active region, wherein the second first-type active region extends in a second row and a third row on a first side of the first row. The semiconductor device also includes a third cell including a first portion and a second portion, wherein the first portion and the second portion are arranged on two sides of the first cell.

Abstract: A semiconductor device includes an active layer having an active region, a source electrode, a drain electrode, a gate electrode, a source metal layer, a drain metal layer, and a source pad. The source metal layer and the drain metal layer are electrically connected to the source electrode and the drain electrode, respectively. An orthogonal projection of the drain metal layer on the active layer each forms a drain metal layer region. The source pad is electrically connected to the source metal layer. An orthogonal projection of the source pad on the active layer forms a source pad region overlapping the drain metal layer. An area of an overlapping region between the source pad region and the drain metal layer region is smaller than or equal to 40% of an area of the drain metal layer region.

Abstract: Compositions and methods for visualizing tissue under illumination with near-infrared radiation, including compounds comprising near-infrared, closed chain, sulfo-cyanine dyes and prostate specific membrane antigen ligands are disclosed.

Abstract: The present disclosure relates to data transmission methods and apparatuses. In one example method, a receiving end obtains a transmission resource, and feeds back first information to a transmitting end based on the transmission resource. The first information is determined based on a channel state of a first channel, and the first information indicates whether retransmission is required or indicates whether a transmission mode is to be adjusted.

Abstract: Embodiments of this application provide a wireless communication method, and an apparatus. The method includes: A first communication apparatus receives first satellite information from a second communication apparatus, where the first satellite information includes a floating-point value of a satellite parameter; the first communication apparatus determines second satellite information based on a reference value of the satellite parameter and the first satellite information; and communicates with the second communication apparatus based on the second satellite information. The second satellite information is a complete value of the satellite parameter. The satellite parameter is represented as the reference value and the floating-point value.

Abstract: This application relates to the field of wireless communications technologies, and discloses an encoding method and apparatus, to improve accuracy of reliability calculation and ordering for polarized channels. The method includes: obtaining a first sequence used to encode K to-be-encoded bits, where the first sequence includes sequence numbers of N polarized channels, the first sequence is same as a second sequence or a subset of the second sequence, the second sequence comprises sequence numbers of Nmax polarized channels, and the second sequence is the sequence shown in Sequence Q11 or Table Q11, K is a positive integer, N is a positive integer power of 2, n is equal to or greater than 5, K?N, Nmax=1024; selecting sequence numbers of K polarized channels from the first sequence; and performing polar code encoding on K the to-be-encoded bits based on the selected sequence numbers of the K polarized channels.

Abstract: The chelation crosslinked polymers include a polymer backbone having one or more chelation crosslinking group(s) at least partially bonded to one or more cation(s). The chelation crosslinking groups may be within a polymer backbone and/or pendant from the polymer backbone. The chelation crosslinked polymers may be chelation crosslinked polyesters. The chelation crosslinked polymers can be used in tissue engineering applications to form tissue grafts and scaffolds.

Abstract: A method of generating an IC layout diagram includes abutting first and second cells to define a first active region including first and second anti-fuse bits, abutting third and fourth cells to define a second active region including third and fourth anti-fuse bits, and defining a third active region including fifth and sixth anti-fuse bits adjacent to the first through fourth anti-fuse bits. The first cell includes first and second via regions overlapping first and second gate regions shared by respective structures and transistors of the first, third, and fifth anti-fuse bits, the fourth cell includes third and fourth via regions overlapping third and fourth gate regions shared by respective transistors and structures of the second, fourth, and sixth anti-fuse bits, the third cell includes fifth and sixth via regions overlapping the first gate region, and the second cell includes seventh and eighth via regions overlapping the fourth gate region.