Abstract: A method of manufacturing a semiconductor device is provided. The method includes: providing a substrate; forming a metallization layer on the substrate; forming a first sacrificial layer and a second sacrificial layer; forming a first mask layer and a second mask layer, wherein the first mask layer covers the first sacrificial layer, the second mask layer covers the second sacrificial layer; forming a first width controlling element on a lateral surface of the first mask layer and a second width controlling element on a lateral surface of the second mask layer; removing the first mask layer and the second mask layer; and patterning the metallization layer to form a first word line between the first sacrificial layer and the second sacrificial layer, wherein a dimension of the first word line depends on a dimension of the first width controlling element.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes: providing a substrate; forming a metallization layer on the substrate; forming a first sacrificial layer and a second sacrificial layer; forming a first mask layer and a second mask layer, wherein the first mask layer covers the first sacrificial layer, the second mask layer covers the second sacrificial layer; forming a first width controlling element on a lateral surface of the first mask layer and a second width controlling element on a lateral surface of the second mask layer; removing the first mask layer and the second mask layer; and patterning the metallization layer to form a first word line between the first sacrificial layer and the second sacrificial layer, wherein a dimension of the first word line depends on a dimension of the first width controlling element.

Abstract: An electrode structure of rechargeable battery includes a battery tab stack, an electrode lead, a welding protective layer and a welding seam. The battery tab stack is formed by extension of a plurality of electrode sheets. The electrode lead is joined to one side of the battery tab stack. The welding protective layer is joined to another side of the battery tab stack opposite to the electrode lead. The welding seam extends from the welding protective layer to the electrode lead through the battery tab stack.

Abstract: A method for fabricating a semiconductor device having a substantially undoped channel region includes forming a plurality of fins extending from a substrate. In various embodiments, each of the plurality of fins includes a portion of a substrate, a portion of a first epitaxial layer on the portion of the substrate, and a portion of a second epitaxial layer on the portion of the first epitaxial layer. The portion of the first epitaxial layer of each of the plurality of fins is oxidized, and a liner layer is formed over each of the plurality of fins. Recessed isolation regions are then formed adjacent to the liner layer. The liner layer may then be etched to expose a residual material portion (e.g., Ge residue) adjacent to a bottom surface of the portion of the second epitaxial layer of each of the plurality of fins, and the residual material portion is removed.

Abstract: The present application disclosures a double production line and a rapid prefabrication process of a segmental beam. The double production line including two production machine and a track system provided on the construction ground; the production machine includes a fixed end mold, two side molds, a bottom mold trolley, a middle internal mold trolley and two side internal mold trolley; two side molds are positioned on two sides of the fixed end mold respectively, the fixed end mold and two side molds together define a pouring position with an end opening, two openings of the pouring position are arranged facing each other; the track system includes a transverse track and a longitudinal track communicated with each other, two pouring positions are both positioned in the extension path of the transverse track, and the longitudinal track is positioned between two pouring positions.

Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.

Abstract: Provided are a bispecific antibody and use thereof. The recombinant antibody includes: a CDR Sequence selected from at least one of CD3 antibody variable region CDR sequences: SEQ ID NO: 1 to SEQ ID NO: 6, and B7H6 antibody variable region CDR sequences: SEQ ID NO: 7 to SEQ ID NO: 12; or an amino acid sequence having at least 95% identity thereto. The recombinant antibodies prepared according to the present application can simultaneously target CD3 and B7H6 antigens, and they have a. significantly prolonged half-life, exhibiting a stronger tumor-inhibiting ability than single-target antibodies.

Abstract: Some implementations described herein provide techniques and apparatuses for a stacked semiconductor die package. The stacked semiconductor die package may include an upper semiconductor die package above a lower semiconductor die package. The stacked semiconductor die package includes one or more rows of pad structures located within a footprint of a semiconductor die of the lower semiconductor die package. The one or more rows of pad structures may be used to mount the upper semiconductor die package above the lower semiconductor die package. Relative to another stacked semiconductor die package including a row of dummy connection structures adjacent to the semiconductor die that may be used to mount the upper semiconductor die package, a size of the stacked semiconductor die package may be reduced.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A container feeding device includes a casing and first and second latch members. The casing defines a lower retaining space for receiving a plurality of containers that are stacked on one another. The first latch member is operable to enter the lower retaining space for supporting a bottommost container, or leave the lower retaining space to release the bottommost container. The second latch member enters the lower retaining space to support a second bottommost container when the bottommost container is released by the first latch member.

Abstract: A tool set includes a tool holder, a tool and a tool rack. The tool has a groove unit. The tool holder has a latch unit that engages the groove unit. The tool rack includes a rack body and a blocking member. When the tool holder is moved away from the rack body after the tool is moved into the rack body by the tool holder and after the blocking member moves to a blocking position, the tool is blocked by the blocking member so that the latch unit is separated from the groove unit and that the tool holder is separated from the tool.

Abstract: An assistive device structure for positioning and pressure relief is provided, including a first elastic layer and a second elastic layer, which are attached by using a high-frequency encapsulation process, sealing, bagging, thermoforming, or an integrally molding process. Each of the first and second elastic layers has a bottom surface and an arc surface disposed opposite to each other. The arc surface includes two protrusions and a recess formed there in between. The two protrusions have different heights. A hollow area is disposed in the recess of the first and second elastic layers. Based on such structure, the bottom surfaces of the first and second elastic layers are attached to form the proposed assistive device structure for a user to lean against and providing multiple positioning effects and pressure relief. More than four axial directions of supporting forces are generated to effectively enhance muscle relaxation and stress relief.

Abstract: A transport mechanism of a server rack including a carrier plate, a server rack disposed and fixed onto a top surface of the carrier plate, and multiple supporting assemblies respectively stacked onto a bottom surface of the carrier plate is provided. Each of the supporting assemblies has at least one cushion member. The cushion member has at least one hollow portion, and an opening of the hollow portion is exposed to an environment. The stiffness of the cushion member is smaller than the stiffness of the carrier plate. A pallet structure is also provided.

Abstract: A method of fabrication of a multi-gate semiconductor device that includes providing a fin having a plurality of a first type of epitaxial layers and a plurality of a second type of epitaxial layers. The plurality of the second type of epitaxial layers is oxidized in the source/drain region. A first portion of a first layer of the second type of epitaxial layers is removed in a channel region of the fin to form an opening between a first layer of the first type of epitaxial layer and a second layer of the first type of epitaxial layer. A portion of a gate structure is then formed in the opening.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: A package structure is provided. The package structure includes a first die and a second die, a dielectric layer, a bridge, an encapsulant, and a redistribution layer structure. The dielectric layer is disposed on the first die and the second die. The bridge is electrically connected to the first die and the second die, wherein the dielectric layer is spaced apart from the bridge. The encapsulant is disposed on the dielectric layer and laterally encapsulating the bridge. The redistribution layer structure is disposed over the encapsulant and the bridge. A top surface of the bridge is in contact with the RDL structure.

Abstract: A method for performing a peritoneal dialysis therapy includes performing a plurality of peritoneal dialysis cycles for a patient and tracking an amount of dialysis fluid provided by at least one dialysis fluid pump during the plurality of peritoneal dialysis cycles. The method also includes determining an amount of ultrafiltrate (“UF”) removed from the patient based on the amount of dialysis fluid provided by the at least one dialysis fluid pump. The method further includes updating a UF trend using previous amounts of UF removed from the patient and the amount of UF removed from the patient during the most recent dialysis treatment and generating an alert if the UF trend changes by more than a preset percentage.

Abstract: Disclosed in the embodiments of the present disclosure are a method and apparatus for multimedia resource editing scene, and a device and a storage medium. The method comprises: detecting whether a current time matches a specified time; in response to determining that the current time matches the specified time, presenting prompt information of a target editing template; where the target editing template is associated with a first multimedia resource; content of the first multimedia resource belongs to a content category associated with the specified time; the target editing template instructs to edit a to-be-edited multimedia material into a second multimedia resource in a target editing way; the target editing way is an editing way used by the first multimedia resource; and the prompt information is presentation information of the first multimedia resource.