Patents by Inventor YING-CHENG TSENG

YING-CHENG TSENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220123706
    Abstract: A common-mode noise filter is provided, and comprises a first transmission structure and a second transmission structure. At least one first transmission unit is connected between a first signal input end and a first signal output end of the first transmission structure in series. At least one second transmission unit is connected between a second signal input end and a second signal output end of the second transmission structure in series. Two first capacitors are connected between the first signal input end and the second signal input end in series, and connected at a first node together. A first common-mode noise suppression unit is connected between the first node and a reference potential, and comprises a second capacitor and a first lossy element connected to the second capacitor in series or parallel. The first common-mode noise suppression unit can absorb a common-mode noise via the first lossy element.
    Type: Application
    Filed: June 21, 2021
    Publication date: April 21, 2022
    Inventors: YANG-CHIH HUANG, YING-CHENG TSENG, CHIN-YI LIN
  • Publication number: 20210375765
    Abstract: A semiconductor package includes a lower encapsulated semiconductor device, a lower redistribution structure, an upper encapsulated semiconductor device, and an upper redistribution structure. The lower redistribution structure is disposed over and electrically connected to the lower encapsulated semiconductor device. The upper encapsulated semiconductor device is disposed over the lower encapsulated semiconductor device and includes a sensor die having a pad and a sensing region, an upper encapsulating material at least laterally encapsulating the sensor die, and an upper conductive via extending through the upper encapsulating material and connected to the lower redistribution structure. The upper redistribution structure is disposed over the upper encapsulated semiconductor device. The upper redistribution structure covers the pad of the sensor die and has an opening located on the sensing region of the sensor die.
    Type: Application
    Filed: May 26, 2020
    Publication date: December 2, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ying-Cheng Tseng, Hao-Yi Tsai, Yu-Chih Huang, Chia-Hung Liu
  • Patent number: 11164819
    Abstract: A semiconductor package includes a first wafer, a second wafer, and an interconnect. The first wafer includes a first die, a first encapsulating material encapsulating the first die, and a first redistribution structure disposed over the first die and the first encapsulating material. The second wafer includes a second die, a second encapsulating material encapsulating the second die, and a second redistribution structure disposed over the second die and the second encapsulating material, wherein the second redistribution structure faces the first redistribution structure. The interconnect is disposed between the first wafer and the second wafer and electrically connecting the first redistribution structure and the second redistribution structure, wherein the interconnect includes a substrate and a plurality of through vias extending through the substrate for connecting the first redistribution structure and the second redistribution structure.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: November 2, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ying-Cheng Tseng, Hao-Yi Tsai, Tin-Hao Kuo, Chia-Hung Liu, Chi-Hui Lai
  • Patent number: 11158555
    Abstract: A package structure including a semiconductor die, an insulating encapsulant, and a redistribution layer is provided. The semiconductor die includes a semiconductor substrate, a plurality of metallization layers disposed on the semiconductor substrate, and a passivation layer disposed on the plurality of metallization layers. The passivation layer has a first opening that partially expose a topmost layer of the plurality of metallization layers. The insulating encapsulant is encapsulating the semiconductor die. The redistribution layer includes at least a first dielectric layer and a first conductive layer stacked on the first dielectric layer. The first dielectric layer has a second opening that overlaps with the first opening, and a width ratio of the second opening to the first opening is in a range of 2.3:1 to 12:1. The first conductive layer is electrically connected to the topmost layer of the plurality of metallization layers through the first and second openings.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: October 26, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Ting Kuo, Chih-Hua Chen, Hao-Yi Tsai, Yu-Chih Huang, Chia-Hung Liu, Chih-Hsuan Tai, Ying-Cheng Tseng
  • Publication number: 20210280511
    Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.
    Type: Application
    Filed: May 10, 2021
    Publication date: September 9, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Tsung-Hsien Chiang, Yu-Chih Huang, Chia-Hung Liu, Ban-Li Wu, Ying-Cheng Tseng, Po-Chun Lin
  • Publication number: 20210272941
    Abstract: A package structure including a first redistribution layer, a semiconductor die, through insulator vias, an insulating encapsulant and a second redistribution layer. The first redistribution layer includes a dielectric layer, a conductive layer, and connecting portions electrically connected to the conductive layer. The dielectric layer has first and second surfaces, the connecting portions has a first side, a second side, and sidewalls joining the first side to the second side. The first side of the connecting portions is exposed from and coplanar with the first surface of the dielectric layer. The semiconductor die is disposed on the second surface of the dielectric layer. The through insulator vias are connected to the conductive layer. The insulating encapsulant is disposed on the dielectric layer and encapsulating the semiconductor die and the through insulator vias. The second redistribution layer is disposed on the semiconductor die and over the insulating encapsulant.
    Type: Application
    Filed: May 17, 2021
    Publication date: September 2, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Yu-Chih Huang, Chia-Hung Liu, Ting-Ting Kuo, Ban-Li Wu, Ying-Cheng Tseng, Chi-Hui Lai
  • Publication number: 20210242159
    Abstract: A package structure including at least one semiconductor die and a redistribution structure is provided. The semiconductor die is laterally encapsulated by an encapsulant, and the redistribution structure is disposed on the semiconductor die and the encapsulant and electrically connected with the semiconductor die. The redistribution structure includes signal lines and a pair of repair lines. The signal lines include a pair of first signal lines located at a first level, and each first signal line of the pair of first signal lines has a break that split each first signal line into separate first and second fragments. The pair of repair lines is located above the pair of first signal lines and located right above the break. Opposite ending portions of each repair line are respectively connected with the first and second fragments with each repair line covering the break in each first signal line.
    Type: Application
    Filed: June 10, 2020
    Publication date: August 5, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Yuan Teng, Hao-Yi Tsai, Kuo-Lung Pan, Sen-Kuei Hsu, Tin-Hao Kuo, Yi-Yang Lei, Ying-Cheng Tseng, Chi-Hui Lai
  • Patent number: 11049850
    Abstract: A semiconductor package includes a semiconductor device including a first UBM structure, wherein the first UBM structure includes multiple first conductive strips, the first conductive strips extending in a first direction, multiple second conductive strips separated from and interleaved with the multiple first conductive strips, the second conductive strips extending in the first direction, wherein the multiple first conductive strips are offset in the first direction from the multiple second conductive strips by a first offset distance, and a substrate including a second UBM structure, the second UBM structure including multiple third conductive strips, each one of the multiple third conductive strips bonded to one of the multiple first conductive strips or one of the multiple second conductive strips.
    Type: Grant
    Filed: May 18, 2020
    Date of Patent: June 29, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsuan Tai, Chi-Hui Lai, Ying-Cheng Tseng, Ban-Li Wu, Ting-Ting Kuo, Yu-Chih Huang, Chiahung Liu, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
  • Patent number: 11011501
    Abstract: A package structure including a first redistribution layer, a semiconductor die, through insulator vias, an insulating encapsulant and a second redistribution layer. The first redistribution layer includes a dielectric layer, a conductive layer, and connecting portions electrically connected to the conductive layer. The dielectric layer has first and second surfaces, the connecting portions has a first side, a second side, and sidewalls joining the first side to the second side. The first side of the connecting portions is exposed from and coplanar with the first surface of the dielectric layer. The semiconductor die is disposed on the second surface of the dielectric layer. The through insulator vias are connected to the conductive layer. The insulating encapsulant is disposed on the dielectric layer and encapsulating the semiconductor die and the through insulator vias. The second redistribution layer is disposed on the semiconductor die and over the insulating encapsulant.
    Type: Grant
    Filed: August 14, 2018
    Date of Patent: May 18, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Yu-Chih Huang, Chia-Hung Liu, Ting-Ting Kuo, Ban-Li Wu, Ying-Cheng Tseng, Chi-Hui Lai
  • Patent number: 11004786
    Abstract: A package structure includes a die, a TIV, a first encapsulant, a RDL structure, a thermal dissipation structure and a second encapsulant. The die has a first surface and a second surface opposite to each other. The TIV is laterally aside the die. The first encapsulant encapsulates sidewalls of the die and sidewalls of the TIV. The RDL structure is disposed on the first surface of the die and on the first encapsulant, electrically connected to the die and the TIV. The thermal dissipation structure is disposed over the second surface of die and electrically connected to the die through the TIV and the RDL structure. The second encapsulant encapsulates sidewalls of the thermal dissipation structure.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: May 11, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Tsung-Hsien Chiang, Yu-Chih Huang, Chia-Hung Liu, Ban-Li Wu, Ying-Cheng Tseng, Po-Chun Lin
  • Publication number: 20210098636
    Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.
    Type: Application
    Filed: January 20, 2020
    Publication date: April 1, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Yu-Chih Huang, Chih-Hao Chang, Chia-Hung Liu, Ban-Li Wu, Ying-Cheng Tseng, Po-Chun Lin
  • Publication number: 20210091065
    Abstract: A semiconductor device includes passive electrical components in a substrate; and an interconnect structure over the passive electrical components, conductive features of the interconnect structure being electrically coupled to the passive electrical components. The conductive features of the interconnect structure includes a first conductive line over the substrate; a conductive bump over the first conductive line, where in a plan view, the conductive bumps has a first elongated shape and is entirely disposed within boundaries of the first conductive line; and a first via between the first conductive line and the conductive bump, the first via electrically connected to the first conductive line and the conductive bump, where in the plan view, the first via has a second elongated shape and is entirely disposed within boundaries of the conductive bump.
    Type: Application
    Filed: December 7, 2020
    Publication date: March 25, 2021
    Inventors: Ying-Cheng Tseng, Yu-Chih Huang, Chih-Hsuan Tai, Ting-Ting Kuo, Chi-Hui Lai, Ban-Li Wu, Chiahung Liu, Hao-Yi Tsai
  • Publication number: 20210074694
    Abstract: A semiconductor package includes an integrated passive device (IPD) including one or more passive devices over a first substrate; and metallization layers over and electrically coupled to the one or more passive devices, where a topmost metallization layer of the metallization layers includes a first plurality of conductive patterns; and a second plurality of conductive patterns interleaved with the first plurality of conductive patterns. The IPD also includes a first under bump metallization (UBM) structure over the topmost metallization layer, where the first UBM structure includes a first plurality of conductive strips, each of the first plurality of conductive strips electrically coupled to a respective one of the first plurality of conductive patterns; and a second plurality of conductive strips interleaved with the first plurality of conductive strips, each of the second plurality of conductive strips electrically coupled to a respective one of the second plurality of conductive patterns.
    Type: Application
    Filed: November 16, 2020
    Publication date: March 11, 2021
    Inventors: Yu-Chih Huang, Chi-Hui Lai, Ban-Li Wu, Ying-Cheng Tseng, Ting-Ting Kuo, Chih-Hsuan Tai, Hao-Yi Tsai, Chuei-Tang Wang, Chung-Shi Liu, Chen-Hua Yu, Chiahung Liu
  • Publication number: 20210057302
    Abstract: In an embodiment, a device includes: a sensor die having a first surface and a second surface opposite the first surface, the sensor die having an input/output region and a first sensing region at the first surface; an encapsulant at least laterally encapsulating the sensor die; a conductive via extending through the encapsulant; and a front-side redistribution structure on the first surface of the sensor die, the front-side redistribution structure being connected to the conductive via and the sensor die, the front-side redistribution structure covering the input/output region of the sensor die, the front-side redistribution structure having a first opening exposing the first sensing region of the sensor die.
    Type: Application
    Filed: November 9, 2020
    Publication date: February 25, 2021
    Inventors: Tsung-Hsien Chiang, Yu-Chih Huang, Ting-Ting Kuo, Chih-Hsuan Tai, Ban-Li Wu, Ying-Cheng Tseng, Chi-Hui Lai, Chiahung Liu, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
  • Publication number: 20200410198
    Abstract: A fingerprint sensor includes a die, a plurality of conductive structures, an encapsulant, a plurality of conductive patterns, a first dielectric layer, a second dielectric layer, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The conductive structures surround the die. The encapsulant encapsulates the die and the conductive structures. The conductive patterns are over the die and are electrically connected to the die and the conductive structures. Top surfaces of the conductive patterns are flat. The first dielectric layer is over the die and the encapsulant. A top surface of the first dielectric layer is coplanar with top surfaces of the conductive patterns. The second dielectric layer covers the first dielectric layer and the conductive patterns. The redistribution structure is over the rear surface of the die.
    Type: Application
    Filed: September 10, 2020
    Publication date: December 31, 2020
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsuan Tai, Chih-Hua Chen, Hao-Yi Tsai, Yu-Chih Huang, Chia-Hung Liu, Ting-Ting Kuo, Ying-Cheng Tseng
  • Patent number: 10861841
    Abstract: A semiconductor device includes passive electrical components in a substrate; and an interconnect structure over the passive electrical components, conductive features of the interconnect structure being electrically coupled to the passive electrical components. The conductive features of the interconnect structure includes a first conductive line over the substrate; a conductive bump over the first conductive line, where in a plan view, the conductive bumps has a first elongated shape and is entirely disposed within boundaries of the first conductive line; and a first via between the first conductive line and the conductive bump, the first via electrically connected to the first conductive line and the conductive bump, where in the plan view, the first via has a second elongated shape and is entirely disposed within boundaries of the conductive bump.
    Type: Grant
    Filed: December 10, 2018
    Date of Patent: December 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ying-Cheng Tseng, Yu-Chih Huang, Chih-Hsuan Tai, Ting-Ting Kuo, Chi-Hui Lai, Ban-Li Wu, Chiahung Liu, Hao-Yi Tsai
  • Publication number: 20200381362
    Abstract: A semiconductor package includes a first wafer, a second wafer, and an interconnect. The first wafer includes a first die, a first encapsulating material encapsulating the first die, and a first redistribution structure disposed over the first die and the first encapsulating material. The second wafer includes a second die, a second encapsulating material encapsulating the second die, and a second redistribution structure disposed over the second die and the second encapsulating material, wherein the second redistribution structure faces the first redistribution structure. The interconnect is disposed between the first wafer and the second wafer and electrically connecting the first redistribution structure and the second redistribution structure, wherein the interconnect includes a substrate and a plurality of through vias extending through the substrate for connecting the first redistribution structure and the second redistribution structure.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 3, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ying-Cheng Tseng, Hao-Yi Tsai, Tin-Hao Kuo, Chia-Hung Liu, Chi-Hui Lai
  • Patent number: 10840227
    Abstract: A semiconductor package includes an integrated passive device (IPD) including one or more passive devices over a first substrate; and metallization layers over and electrically coupled to the one or more passive devices, where a topmost metallization layer of the metallization layers includes a first plurality of conductive patterns; and a second plurality of conductive patterns interleaved with the first plurality of conductive patterns. The IPD also includes a first under bump metallization (UBM) structure over the topmost metallization layer, where the first UBM structure includes a first plurality of conductive strips, each of the first plurality of conductive strips electrically coupled to a respective one of the first plurality of conductive patterns; and a second plurality of conductive strips interleaved with the first plurality of conductive strips, each of the second plurality of conductive strips electrically coupled to a respective one of the second plurality of conductive patterns.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: November 17, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chih Huang, Chi-Hui Lai, Ban-Li Wu, Ying-Cheng Tseng, Ting-Ting Kuo, Chih-Hsuan Tai, Hao-Yi Tsai, Chuei-Tang Wang, Chung-Shi Liu, Chen-Hua Yu, Chiahung Liu
  • Patent number: 10832985
    Abstract: In an embodiment, a device includes: a sensor die having a first surface and a second surface opposite the first surface, the sensor die having an input/output region and a first sensing region at the first surface; an encapsulant at least laterally encapsulating the sensor die; a conductive via extending through the encapsulant; and a front-side redistribution structure on the first surface of the sensor die, the front-side redistribution structure being connected to the conductive via and the sensor die, the front-side redistribution structure covering the input/output region of the sensor die, the front-side redistribution structure having a first opening exposing the first sensing region of the sensor die.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: November 10, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsung-Hsien Chiang, Yu-Chih Huang, Ting-Ting Kuo, Chih-Hsuan Tai, Ban-Li Wu, Ying-Cheng Tseng, Chi-Hui Lai, Chiahung Liu, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
  • Publication number: 20200294912
    Abstract: A package structure includes a die, a TIV, a first encapsulant, a RDL structure, a thermal dissipation structure and a second encapsulant. The die has a first surface and a second surface opposite to each other. The TIV is laterally aside the die. The first encapsulant encapsulates sidewalls of the die and sidewalls of the TIV. The RDL structure is disposed on the first surface of the die and on the first encapsulant, electrically connected to the die and the TIV. The thermal dissipation structure is disposed over the second surface of die and electrically connected to the die through the TIV and the RDL structure. The second encapsulant encapsulates sidewalls of the thermal dissipation structure.
    Type: Application
    Filed: March 15, 2019
    Publication date: September 17, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Tsung-Hsien Chiang, Yu-Chih Huang, Chia-Hung Liu, Ban-Li Wu, Ying-Cheng Tseng, Po-Chun Lin