Patents by Inventor YING-CHENG TSENG

YING-CHENG TSENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210057302
    Abstract: In an embodiment, a device includes: a sensor die having a first surface and a second surface opposite the first surface, the sensor die having an input/output region and a first sensing region at the first surface; an encapsulant at least laterally encapsulating the sensor die; a conductive via extending through the encapsulant; and a front-side redistribution structure on the first surface of the sensor die, the front-side redistribution structure being connected to the conductive via and the sensor die, the front-side redistribution structure covering the input/output region of the sensor die, the front-side redistribution structure having a first opening exposing the first sensing region of the sensor die.
    Type: Application
    Filed: November 9, 2020
    Publication date: February 25, 2021
    Inventors: Tsung-Hsien Chiang, Yu-Chih Huang, Ting-Ting Kuo, Chih-Hsuan Tai, Ban-Li Wu, Ying-Cheng Tseng, Chi-Hui Lai, Chiahung Liu, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
  • Publication number: 20210035620
    Abstract: A method for forming a semiconductor structure is disclosed. A substrate having a logic device region and a memory device region is provided. A first dielectric layer is formed on the substrate. Plural memory stack structures are formed on the first dielectric layer on the memory device region. An insulating layer is formed and conformally covers the memory stack structures and the first dielectric layer. An etching back process is performed to remove a portion of the insulating layer without exposing any portion of the memory stack structures. After the etching back process, a second dielectric layer is formed on the insulating layer and completely fills the spaces between the memory stack structures.
    Type: Application
    Filed: August 29, 2019
    Publication date: February 4, 2021
    Inventors: Hui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Jing-Yin Jhang, Chien-Ting Lin
  • Patent number: 10910553
    Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.
    Type: Grant
    Filed: August 5, 2019
    Date of Patent: February 2, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, Jun Xie
  • Publication number: 20210020828
    Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.
    Type: Application
    Filed: August 5, 2019
    Publication date: January 21, 2021
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, JUN XIE
  • Publication number: 20210020691
    Abstract: A magnetoresistive random access memory (MRAM), including multiple cell array regions, multiple MRAM cells disposed in the cell array region, a silicon nitride liner conformally covering on the MRAM cells, an atomic layer deposition dielectric layer covering on the silicon nitride liner in the cell array region, wherein the surface of atomic layer deposition dielectric layer is a curved surface concave downward to the silicon nitride liner at the boundary of MRAM cells, and an ultra low-k dielectric layer covering on the atomic layer deposition dielectric layer.
    Type: Application
    Filed: August 6, 2019
    Publication date: January 21, 2021
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Ying-Cheng Liu, Yi-Hui Lee, Chin-Yang Hsieh, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang
  • Publication number: 20200410198
    Abstract: A fingerprint sensor includes a die, a plurality of conductive structures, an encapsulant, a plurality of conductive patterns, a first dielectric layer, a second dielectric layer, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The conductive structures surround the die. The encapsulant encapsulates the die and the conductive structures. The conductive patterns are over the die and are electrically connected to the die and the conductive structures. Top surfaces of the conductive patterns are flat. The first dielectric layer is over the die and the encapsulant. A top surface of the first dielectric layer is coplanar with top surfaces of the conductive patterns. The second dielectric layer covers the first dielectric layer and the conductive patterns. The redistribution structure is over the rear surface of the die.
    Type: Application
    Filed: September 10, 2020
    Publication date: December 31, 2020
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsuan Tai, Chih-Hua Chen, Hao-Yi Tsai, Yu-Chih Huang, Chia-Hung Liu, Ting-Ting Kuo, Ying-Cheng Tseng
  • Publication number: 20200393642
    Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.
    Type: Application
    Filed: June 12, 2020
    Publication date: December 17, 2020
    Inventors: Chao-Chang HU, Liang-Ting HO, Chen-Er HSU, Yi-Liang CHAN, Fu-Lai TSENG, Fu-Yuan WU, Chen-Chi KUO, Ying-Jen WANG, Wei-Han HSIA, Yi-Hsin TSENG, Wen-Chang LIN, Chun-Chia LIAO, Shou-Jen LIU, Chao-Chun CHANG, Yi-Chieh LIN, Shang-Yu HSU, Yu-Huai LIAO, Shih-Wei HUNG, Sin-Hong LIN, Kun-Shih LIN, Yu-Cheng LIN, Wen-Yen HUANG, Wei-Jhe SHEN, Chih-Shiang WU, Sin-Jhong SONG, Che-Hsiang CHIU, Sheng-Chang LIN
  • Patent number: 10861841
    Abstract: A semiconductor device includes passive electrical components in a substrate; and an interconnect structure over the passive electrical components, conductive features of the interconnect structure being electrically coupled to the passive electrical components. The conductive features of the interconnect structure includes a first conductive line over the substrate; a conductive bump over the first conductive line, where in a plan view, the conductive bumps has a first elongated shape and is entirely disposed within boundaries of the first conductive line; and a first via between the first conductive line and the conductive bump, the first via electrically connected to the first conductive line and the conductive bump, where in the plan view, the first via has a second elongated shape and is entirely disposed within boundaries of the conductive bump.
    Type: Grant
    Filed: December 10, 2018
    Date of Patent: December 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ying-Cheng Tseng, Yu-Chih Huang, Chih-Hsuan Tai, Ting-Ting Kuo, Chi-Hui Lai, Ban-Li Wu, Chiahung Liu, Hao-Yi Tsai
  • Publication number: 20200381362
    Abstract: A semiconductor package includes a first wafer, a second wafer, and an interconnect. The first wafer includes a first die, a first encapsulating material encapsulating the first die, and a first redistribution structure disposed over the first die and the first encapsulating material. The second wafer includes a second die, a second encapsulating material encapsulating the second die, and a second redistribution structure disposed over the second die and the second encapsulating material, wherein the second redistribution structure faces the first redistribution structure. The interconnect is disposed between the first wafer and the second wafer and electrically connecting the first redistribution structure and the second redistribution structure, wherein the interconnect includes a substrate and a plurality of through vias extending through the substrate for connecting the first redistribution structure and the second redistribution structure.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 3, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ying-Cheng Tseng, Hao-Yi Tsai, Tin-Hao Kuo, Chia-Hung Liu, Chi-Hui Lai
  • Publication number: 20200373478
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first liner on the MTJ; forming a second liner on the first liner; forming an inter-metal dielectric (IMD) layer on the MTJ, and forming a metal interconnection in the IMD layer, the second liner, and the first liner to electrically connect the MTJ. Preferably, the first liner and the second liner are made of different materials.
    Type: Application
    Filed: June 12, 2019
    Publication date: November 26, 2020
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Patent number: 10840227
    Abstract: A semiconductor package includes an integrated passive device (IPD) including one or more passive devices over a first substrate; and metallization layers over and electrically coupled to the one or more passive devices, where a topmost metallization layer of the metallization layers includes a first plurality of conductive patterns; and a second plurality of conductive patterns interleaved with the first plurality of conductive patterns. The IPD also includes a first under bump metallization (UBM) structure over the topmost metallization layer, where the first UBM structure includes a first plurality of conductive strips, each of the first plurality of conductive strips electrically coupled to a respective one of the first plurality of conductive patterns; and a second plurality of conductive strips interleaved with the first plurality of conductive strips, each of the second plurality of conductive strips electrically coupled to a respective one of the second plurality of conductive patterns.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: November 17, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chih Huang, Chi-Hui Lai, Ban-Li Wu, Ying-Cheng Tseng, Ting-Ting Kuo, Chih-Hsuan Tai, Hao-Yi Tsai, Chuei-Tang Wang, Chung-Shi Liu, Chen-Hua Yu, Chiahung Liu
  • Patent number: 10832985
    Abstract: In an embodiment, a device includes: a sensor die having a first surface and a second surface opposite the first surface, the sensor die having an input/output region and a first sensing region at the first surface; an encapsulant at least laterally encapsulating the sensor die; a conductive via extending through the encapsulant; and a front-side redistribution structure on the first surface of the sensor die, the front-side redistribution structure being connected to the conductive via and the sensor die, the front-side redistribution structure covering the input/output region of the sensor die, the front-side redistribution structure having a first opening exposing the first sensing region of the sensor die.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: November 10, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsung-Hsien Chiang, Yu-Chih Huang, Ting-Ting Kuo, Chih-Hsuan Tai, Ban-Li Wu, Ying-Cheng Tseng, Chi-Hui Lai, Chiahung Liu, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
  • Patent number: 10781266
    Abstract: An antibody, or an antigen-binding fragment there, binding human ENO1 (GenBank: AAH506421.1) is provided. Methods for treating an ENO1 protein-related disease or disorder, inhibiting cancer invasion and diagnosis of cancer are also provided.
    Type: Grant
    Filed: March 19, 2018
    Date of Patent: September 22, 2020
    Assignees: DEVELOPMENT CENTER FOR BIOTECHNOLOGY, NATIONAL HEALTH RESEARCH INSTITUTES
    Inventors: Shih-Chong Tsai, Ta-Tung Yuan, Shih-Chi Tseng, Jiann-Shiun Lai, Chia-Cheng Wu, Po-Yin Lin, Ya-Wei Tsai, Chao-Yang Huang, Ying-Yung Lok, Chung-Hsiun Wu, Hsien-Yu Tsai, Neng-Yao Shih, Ko-Jiunn Liu, Li-Tzong Chen
  • Publication number: 20200294912
    Abstract: A package structure includes a die, a TIV, a first encapsulant, a RDL structure, a thermal dissipation structure and a second encapsulant. The die has a first surface and a second surface opposite to each other. The TIV is laterally aside the die. The first encapsulant encapsulates sidewalls of the die and sidewalls of the TIV. The RDL structure is disposed on the first surface of the die and on the first encapsulant, electrically connected to the die and the TIV. The thermal dissipation structure is disposed over the second surface of die and electrically connected to the die through the TIV and the RDL structure. The second encapsulant encapsulates sidewalls of the thermal dissipation structure.
    Type: Application
    Filed: March 15, 2019
    Publication date: September 17, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Tsung-Hsien Chiang, Yu-Chih Huang, Chia-Hung Liu, Ban-Li Wu, Ying-Cheng Tseng, Po-Chun Lin
  • Publication number: 20200279837
    Abstract: A semiconductor package includes a semiconductor device including a first UBM structure, wherein the first UBM structure includes multiple first conductive strips, the first conductive strips extending in a first direction, multiple second conductive strips separated from and interleaved with the multiple first conductive strips, the second conductive strips extending in the first direction, wherein the multiple first conductive strips are offset in the first direction from the multiple second conductive strips by a first offset distance, and a substrate including a second UBM structure, the second UBM structure including multiple third conductive strips, each one of the multiple third conductive strips bonded to one of the multiple first conductive strips or one of the multiple second conductive strips.
    Type: Application
    Filed: May 18, 2020
    Publication date: September 3, 2020
    Inventors: Chih-Hsuan Tai, Chi-Hui Lai, Ying-Cheng Tseng, Ban-Li Wu, Ting-Ting Kuo, Yu-Chih Huang, Chiahung Liu, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
  • Patent number: 10762319
    Abstract: A fingerprint sensor includes a die, a plurality of conductive structures, an encapsulant, a plurality of conductive patterns, a first dielectric layer, a second dielectric layer, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The conductive structures surround the die. The encapsulant encapsulates the die and the conductive structures. The conductive patterns are over the die and are electrically connected to the die and the conductive structures. Top surfaces of the conductive patterns are flat. The first dielectric layer is over the die and the encapsulant. A top surface of the first dielectric layer is coplanar with top surfaces of the conductive patterns. The second dielectric layer covers the first dielectric layer and the conductive patterns. The redistribution structure is over the rear surface of the die.
    Type: Grant
    Filed: January 30, 2018
    Date of Patent: September 1, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Hsuan Tai, Chih-Hua Chen, Hao-Yi Tsai, Yu-Chih Huang, Chia-Hung Liu, Ting-Ting Kuo, Ying-Cheng Tseng
  • Publication number: 20200266335
    Abstract: A semiconductor device preferably includes a metal-oxide semiconductor (MOS) transistor disposed on a substrate, an interlayer dielectric (ILD) layer disposed on the MOS transistor, and a magnetic tunneling junction (MTJ) disposed on the ILD layer. Preferably, a top surface of the MTJ includes a reverse V-shape while the top surface of the MTJ is also electrically connected to a source/drain region of the MOS transistor.
    Type: Application
    Filed: March 10, 2019
    Publication date: August 20, 2020
    Inventors: Hui-Lin Wang, Ying-Cheng Liu, Yi-An Shih, Yi-Hui Lee, Chen-Yi Weng, Chin-Yang Hsieh, I-Ming Tseng, Jing-Yin Jhang, Yu-Ping Wang
  • Patent number: 10727397
    Abstract: A magneto-resistive random access memory (MRAM) cell includes a substrate having a dielectric layer disposed thereon, a conductive via disposed in the dielectric layer, and a cylindrical stack disposed on the conductive via. The cylindrical stack includes a bottom electrode, a magnetic tunneling junction (MTJ) layer on the bottom electrode, and a top electrode on the MTJ layer. A spacer layer is disposed on a sidewall of the cylindrical stack. The top electrode protrudes from a top surface of the spacer layer.
    Type: Grant
    Filed: January 29, 2019
    Date of Patent: July 28, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Yi-Wei Tseng, Meng-Jun Wang, Chen-Yi Weng, Chin-Yang Hsieh, Jing-Yin Jhang, Yu-Ping Wang, Chien-Ting Lin, Ying-Cheng Liu, Yi-An Shih, Yi-Hui Lee, I-Ming Tseng
  • Publication number: 20200227473
    Abstract: An MRAM structure includes a dielectric layer. A contact hole is disposed in the dielectric layer. A contact plug fills in the contact hole and protrudes out of the dielectric layer. The contact plug includes a lower portion and an upper portion. The lower portion fills in the contact hole. The upper portion is outside of the contact hole. The upper portion has a top side and a bottom side greater than the top side. The top side and the bottom side are parallel. The bottom side is closer to the contact hole than the top side. An MRAM is disposed on the contact hole and contacts the contact plug.
    Type: Application
    Filed: February 19, 2019
    Publication date: July 16, 2020
    Inventors: Yi-Hui Lee, I-Ming Tseng, Ying-Cheng Liu, Yi-An Shih, Yu-Ping Wang
  • Publication number: 20200227625
    Abstract: A magneto-resistive random access memory (MRAM) cell includes a substrate having a dielectric layer disposed thereon, a conductive via disposed in the dielectric layer, and a cylindrical stack disposed on the conductive via. The cylindrical stack includes a bottom electrode, a magnetic tunneling junction (MTJ) layer on the bottom electrode, and a top electrode on the MTJ layer. A spacer layer is disposed on a sidewall of the cylindrical stack. The top electrode protrudes from a top surface of the spacer layer.
    Type: Application
    Filed: January 29, 2019
    Publication date: July 16, 2020
    Inventors: Hui-Lin Wang, Yi-Wei Tseng, Meng-Jun Wang, Chen-Yi Weng, Chin-Yang Hsieh, Jing-Yin Jhang, Yu-Ping Wang, Chien-Ting Lin, Ying-Cheng Liu, Yi-An Shih, Yi-Hui Lee, I-Ming Tseng