Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: A multi-gate semiconductor device is formed that provides a first fin element extending from a substrate. A gate structure extends over a channel region of the first fin element. The channel region of the first fin element includes a plurality of channel semiconductor layers each surrounded by a portion of the gate structure. A source/drain region of the first fin element is adjacent the gate structure. The source/drain region includes a first semiconductor layer, a dielectric layer over the first semiconductor layer, and a second semiconductor layer over the dielectric layer.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: The disclosure relates to a method for making a photocatalytic structure, the method comprising: providing a carbon nanotube structure comprising a plurality of carbon nanotubes intersected with each other; a plurality of openings being defined by the plurality of carbon nanotubes; forming a photocatalytic active layer on the surface of the carbon nanotube structure; applying a metal layer pre-form on the surface of the photocatalytic active layer; and annealing the metal layer pre-form.

Abstract: A method for making an infrared light absorber is provided, and the method includes following steps: providing a first carbon nanotube array on a substrate; truncating the carbon nanotube array by irradiating a top surface of the carbon nanotube array by a laser beam in two directions, the top surface being away from the substrate, wherein the two directions being at an angle, the angle is in a range of 30 degrees to 90 degrees.

Abstract: The disclosure relates to a photocatalytic structure. The photocatalytic structure includes a substrate, a photocatalytic active layer, and a metal layer. The substrate, the photocatalytic active layer, and the metal layer are arranged in succession. The substrate includes a base and a patterned bulge layer on a surface of the base. The patterned bulge layer is a net-like structure comprising a plurality of strip-shaped bulges intersected with each other and a plurality of indents defined by the plurality of strip-shaped bulges. The plurality of strip-shaped bulges is an integrated structure. The photocatalytic active layer is on the surface of the patterned bulge layer. The metal layer includes a plurality of nanoparticles located on the surface of the photocatalytic active layer away from the substrate.

Abstract: A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a nano-scale semiconductor structure. The second electrode is located on the second end.

Abstract: An infrared detector is provided, and the infrared detector includes: a thermoelectric element; an infrared light absorber, located on and in contact with the thermoelectric element, and configured to absorb infrared light and convert infrared light into heat; an electrical signal detector, electrically connected to the thermoelectric element and configured to detect a change in electrical performance of the thermoelectric element; wherein the infrared light absorber includes a carbon nanotube array, the carbon nanotube array includes a plurality of carbon nanotubes, a height of the plurality of carbon nanotubes are substantially the same, and the plurality of carbon nanotubes are perpendicular to the thermoelectric element.

Abstract: The disclosure relates to a method for making carrier for use in single molecule detection. The method includes: providing a rigid substrate; coating a polymer layer on a surface of the rigid substrate, the polymer layer is in semisolid state; transferring a nano-scaled pattern of a template on a surface of the polymer layer by pressing the template on the surface of the polymer layer; obtaining a flexible substrate by removing the template; and applying a metal layer on the flexible substrate. The carrier for use in single molecule detection has a relative higher SERS and can enhance the Raman scattering.

Abstract: The disclosure relates to a method for making a photocatalytic structure, the method comprising: providing a carbon nanotube structure comprising a plurality of carbon nanotubes intersected with each other; a plurality of openings being defined by the plurality of carbon nanotubes; forming a photocatalytic active layer on the surface of the carbon nanotube structure; applying a metal layer pre-form on the surface of the photocatalytic active layer; and annealing the metal layer pre-form.

Abstract: The disclosure relates to a photocatalytic structure. The photocatalytic structure includes a carbon nanotube structure, a photocatalytic active layer coated on the carbon nanotube structure, and a metal layer including a plurality of nanoparticles located on the surface of the photocatalytic active layer. The carbon nanotube structure comprises a plurality of intersected carbon nanotubes and defines a plurality of openings, and the photocatalytic active layer is coated on the surface of the plurality of carbon nanotubes. The metal layer includes a plurality of nanoparticles located on the surface of the photocatalytic active layer.

Abstract: A molecular detection device is related. The device includes a carrier, a detector and a control computer. The carrier includes a substrate, a middle layer and a metal layer. The middle layer is sandwiched between the substrate and the middle layer. The detector is configured to detect molecules on a surface of the carrier. The control computer is connected to the detector and configured to analyze a detection result. The middle layer includes a base and a patterned bulge on the base, and the patterned bulge includes a plurality of strip-shaped bulges, the metal layer is on the patterned bulge.

Abstract: A carrier for single molecule detection is related. The carrier includes a substrate; a middle layer, on the substrate; and a metal layer, on the middle layer; wherein the substrate is a flexible substrate, the middle layer includes a base and a patterned bulge on the base, the patterned bulge includes a plurality of strip-shaped bulges, the metal layer is on the patterned bulge.

Abstract: A method for detecting molecular is related. The method includes providing a sample, in which a sample surface is distributed with analyte molecules; providing a carrier including a substrate, a middle layer and a metal layer, in which the middle layer is sandwiched between the substrate and the metal layer, the middle layer includes a base and a patterned bulge on a surface of the base, the patterned bulge includes a plurality of strip-shaped bulges intersected with each other to form a net and define a number of holes, and the metal layer is on the patterned bulge; placing the carrier on the sample surface to make the metal layer being attached to the sample surface, in which parts of the analyte molecules are formed on the metal layer; detecting the analyte molecules on the metal layer with a detector.

Abstract: The disclosure relates to a photocatalytic structure. The photocatalytic structure includes a carbon nanotube structure, a photocatalytic active layer coated on the carbon nanotube structure, and a metal layer including a plurality of nanoparticles located on the surface of the photocatalytic active layer. The carbon nanotube structure comprises a plurality of intersected carbon nanotubes and defines a plurality of openings, and the photocatalytic active layer is coated on the surface of the plurality of carbon nanotubes. The metal layer includes a plurality of nanoparticles located on the surface of the photocatalytic active layer.

Abstract: The disclosure relates to a photocatalytic structure. The photocatalytic structure includes a substrate, a photocatalytic active layer, and a metal layer. The substrate, the photocatalytic active layer, and the metal layer are arranged in succession. The substrate includes a base and a patterned bulge layer on a surface of the base. The patterned bulge layer is a net-like structure comprising a plurality of strip-shaped bulges intersected with each other and a plurality of indents defined by the plurality of strip-shaped bulges. The plurality of strip-shaped bulges is an integrated structure. The photocatalytic active layer is on the surface of the patterned bulge layer. The metal layer includes a plurality of nanoparticles located on the surface of the photocatalytic active layer away from the substrate.

Abstract: A method for making an infrared light absorber is provided, and the method includes following steps: providing a first carbon nanotube array on a substrate; truncating the carbon nanotube array by irradiating a top surface of the carbon nanotube array by a laser beam in two directions, the top surface being away from the substrate, wherein the two directions being at an angle, the angle is in a range of 30 degrees to 90 degrees.