Abstract: A memory is provided. The memory includes: a storage array that includes multiple bit lines, each of the multiple bit lines is connected to multiple storage cells in the storage array; multiple column select signal units that are connected to sensitive amplifiers, the sensitive amplifiers and the multiple bit lines are disposed in one-to-one correspondence; local data buses that are divided into local data buses O and local data buses E, adjacent bit lines are electrically connected to a respective local data bus O and a respective local data bus E, respectively, through a respective sensitive amplifier and a respective column select signal unit; and a first error checking and correcting unit and a second error checking and correcting unit that are configured to check and correct errors of data.

Abstract: An optical system is provided. The optical system is used for disposing on an electronic device. The optical system includes a movable portion, a fixed portion, a first driving assembly, and a support module. The movable portion is used for connecting to an optical module. The fixed portion is affixed on the electronic device, and the movable portion is movable relative to the fixed portion. The first driving assembly is used for driving the movable portion to move relative to the fixed portion. The movable portion is movably connected to the fixed portion through the support module.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A breathable and waterproof non-woven fabric is manufactured by a manufacturing method including the following steps. Performing a kneading process on 87 to 91 parts by weight of a polyester, 5 to 7 parts by weight of a water repellent, and 3 to 6 parts by weight of a flow promoter to form a mixture, in which the polyester has a melt index between 350 g/10 min and 1310 g/10 min at a temperature of 270° C., and the mixture has a melt index between 530 g/10 min and 1540 g/10 min at a temperature of 270° C. Performing a melt-blowing process on the mixture, such that the flow promoter is volatilized and a melt-blown fiber is formed, in which the melt-blown fiber has a fiber body and the water repellent disposed on the fiber body with a particle size (D90) between 350 nm and 450 nm.

Abstract: A novel additive for recycling thermoset materials, its related recyclable thermoset composition and its application are disclosed. Specifically, the composition of the additive comprises at least one copolymer that has at least one carbamate group, at least one carbonate group and/or at least one urea group, and a number-average molecular weight of the copolymer is between 100 and 50,000 Da.

Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.

Abstract: A method includes forming a gate stack, which includes a first portion over a portion of a first semiconductor fin, a second portion over a portion of a second semiconductor fin, and a third portion connecting the first portion to the second portion. An anisotropic etching is performed on the third portion of the gate stack to form an opening between the first portion and the second portion. A footing portion of the third portion remains after the anisotropic etching. The method further includes performing an isotropic etching to remove a metal gate portion of the footing portion, and filling the opening with a dielectric material.

Abstract: A semiconductor device includes a fin structure disposed over a substrate. The semiconductor device includes a first interfacial layer straddling the fin structure. The semiconductor device includes a gate dielectric layer extending along sidewalls of the fin structure. The semiconductor device includes a second interfacial layer overlaying a top surface of the fin structure. The semiconductor device includes a gate structure straddling the fin structure. The first interfacial layer and the gate dielectric layer are disposed between the sidewalls of the fin structure and the gate structure.

Abstract: A method of manufacturing an electronic device, including the following steps, is provided. A first dielectric layer and a second dielectric layer are provided. The first dielectric layer has a first surface and a second surface opposite to each other, and the second dielectric layer has a third surface and a fourth surface opposite to each other. A first unit is formed on the first surface or the second surface of the first dielectric layer. The first dielectric layer and the second dielectric layer are combined to form a substrate structure. The second surface of the first dielectric layer faces the third surface of the second dielectric layer. A dielectric loss of the first unit is less than a dielectric loss of the first dielectric layer. The method of manufacturing the electronic device of the embodiment of the disclosure can reduce the dielectric loss by using the unit.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: Systems and methods of automatic screen mapping are presented. In one exemplary embodiment, a method is performed by a controller device that is coupled to at least one of a set of display devices that are spatially arranged so that each display device is positioned adjacent to at least one other display device and wherein each display device includes a screen structure having a set of presence sensitive sensors. Each display device is operable, for each presence sensitive sensor of the corresponding screen structure, to detect a presence signal and to radiate a presence signal. The method includes receiving an indication that a second display device of the set of display devices has detected a presence signal radiated from a presence sensitive sensor of a first display device of the set of display devices so as to determine a spatial arrangement of the first and second display devices.

Abstract: A Projected Capacitive (PCAP) display including multiple arrays of conductive electrodes performs a dual function. In a first function, the PCAP display uses the conductive electrode arrays to generate an electrostatic field and determines the presence and position of a conductive object based on small changes it detects in the capacitance of that electrostatic field. In a second function, the PCAP display uses the same conductive electrode arrays to generate a magnetic field. As a user swipes the card across the surface of the PCAP display, it causes small changes in the generated magnetic field. The PCAP display retrieves the data magnetically encoded onto the magnetic stripe card based on the changes it detects in the magnetic field.

Abstract: A device, apparatus, and method for semiconductor transfer are provided. A transfer substrate is controlled to be moved to be above the target substrate. An infrared emitting portion emits infrared signals to position a semiconductor on a target substrate. After a second magnetic portion picks up the semiconductor from the target substrate, a controller outputs a first control current to a first electromagnetic portion to cause the first electromagnetic portion to generate an electromagnetic force, to control the second magnetic portion to adjust a position of the picked-up semiconductor relative to the welding position on the target substrate, where adjusting the position of the picked up semiconductor includes horizontal adjustment.

Abstract: A method for manufacturing a semiconductor structure includes: forming a patterned structure which includes a first semiconductor portion and a second semiconductor portion, the first and second semiconductor portions having different materials; and performing an oxide formation process to oxidize the first and second semiconductor portions such that a first oxidation layer formed on the first semiconductor portion has a thickness less than that of a second oxidation layer formed on the second semiconductor portion.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes an epitaxial structure and a metal silicide layer. The epitaxial structure includes a semiconductor material. The metal silicide layer is disposed on the epitaxial structure. The metal silicide layer includes the semiconductor material, a first metal material and a second metal material. An atomic size of the first metal material is greater than an atomic size of the second metal material, and a concentration of the first metal material in the metal silicide layer varies along a thickness direction.

Abstract: The present application discloses a method, device, and system for processing a medical image. The method includes obtaining a source spinal image, identifying one or more vertebral bodies and one or more intervertebral discs comprised in the source spinal image, determining the vertebral body recognition results corresponding to the one or more vertebral bodies and the intervertebral disc recognition results corresponding to the one or more intervertebral discs, and determining target recognition results corresponding to the source spinal image based at least in part one on one or more of the vertebral body recognition results and the intervertebral disc recognition results.

Abstract: An example redundant power supply system comprises a power supply input to receive power from a power supply; a buck-boost converter coupled to the power supply input; and a controller coupled to the buck-boost converter. The controller is to receive a power supply identification signal from the power supply. The controller is also to enable or disable the buck-boost converter based on the power supply identification signal.

Abstract: An organic-inorganic hybrid material is disclosure. The organic-inorganic hybrid material contains 5˜50 wt % of inorganic compounds and has a characteristic peak at 1050±50 cm?1 in FTIR spectrum. Furthermore, the invention also provides a fabricating process of the organic-inorganic hybrid material as well as its starting material “isocyanates”. In particular, the isocyanates are prepared from carbonate containing compounds and amines.

Abstract: A temperature control apparatus is disposed in a first environment and a second environment. The temperature control apparatus includes a heat exchanging unit and a working fluid. The heat exchanging unit is independently disposed and divided into a first heat exchanging portion and a second heat exchanging portion. The heat exchanging unit includes a pipe and a plurality of heat-dissipating fins for cooling the pipe. Two ends of the pipe are connected to from a closed pipe. The pipe runs in the first and the second heat exchanging portions alternately. The heat-dissipating fins are not continuously disposed in the first heat exchanging portion and the second heat exchanging portion. The first heat exchanging portion is correspondingly disposed at the first environment. The second heat exchanging portion is correspondingly disposed at the second environment. The working fluid flows in the pipe.

Abstract: Embodiments of the disclosure provide methods, apparatuses, and computer-readable media for generating image reports. In one embodiment, the method includes: obtaining an image to be analyzed; determining at least one reference image corresponding to the image to be analyzed, the at least one reference image corresponding to a respective reference image report; and generating, based on the reference image report, an image report corresponding to the image to be analyzed. In the method for generating an image report provided by the embodiments, by obtaining an image to be analyzed is obtained, at least one reference image corresponding to the image to be analyzed is determined; and an image report corresponding to the image to be analyzed is generated based on a respective reference image report corresponding to the at least one reference image.