Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A thermal plastic polyurethane with a stress more than 2.5 MPa, its preparing formulation and making process are disclosed. In particular, the thermal plastic polyurethane with a stress more than 2.5 MPa is prepared from a formulation comprises a polycarbonate derivative and a chain extender.

Abstract: A thermoset epoxy resin, its preparing composition and making process are disclosed. In particular, the thermoset epoxy resin is glycidyl ether of diphenolic bis-carbamate and formed by curing a one component epoxy composition and has a general structure as shown in formula (1).

Abstract: An organic-inorganic hybrid material is disclosure. The organic inorganic hybrid material contains 5˜50 wt % of inorganic compounds and has a characteristic peak at 1050±50 cm?1 in FTIR spectrum. Furthermore, the invention also provides a fabricating process of the organic-inorganic hybrid material as well as its starting material “isocyanates”. In particular, the isocyanates are prepared from carbonate containing compounds and amines.

Abstract: Prediction of an affinity between a drug and a target is disclosed. The drug and the target for interacting with the drug are acquired. An interaction is caused between the drug and the target to determine the compound. Topological structure graphs for labeling spatial characteristics of atoms in the compound are computed. An affinity between the drug and the target based on the topological structure graphs is determined.

Abstract: A tire maintenance means (1) is provided, which includes a monitoring module (2) for monitoring the status of a tire; an inflating module (4) for inflating or deflating the tire; a repairing module (5) for filling a sealant to the tire; a control module (3) for maintaining the tire based on a signal from the monitoring module (2). A method of maintaining a tire is also provided.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A breathable and waterproof non-woven fabric is manufactured by a manufacturing method including the following steps. Performing a kneading process on 87 to 91 parts by weight of a polyester, 5 to 7 parts by weight of a water repellent, and 3 to 6 parts by weight of a flow promoter to form a mixture, in which the polyester has a melt index between 350 g/10 min and 1310 g/10 min at a temperature of 270° C., and the mixture has a melt index between 530 g/10 min and 1540 g/10 min at a temperature of 270° C. Performing a melt-blowing process on the mixture, such that the flow promoter is volatilized and a melt-blown fiber is formed, in which the melt-blown fiber has a fiber body and the water repellent disposed on the fiber body with a particle size (D90) between 350 nm and 450 nm.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: An example redundant power supply system comprises a power supply input to receive power from a power supply; a buck-boost converter coupled to the power supply input; and a controller coupled to the buck-boost converter. The controller is to receive a power supply identification signal from the power supply. The controller is also to enable or disable the buck-boost converter based on the power supply identification signal.

Abstract: A waste lithium battery recovery system includes a feeding device, a steam generating device, a supercharger, a water ion generating device, a lithium battery processing device, a condensate tank, a plasma exhaust device, and a recovery processing device. In practice, the steam generating device produces saturated steam. The supercharger heats the saturated steam into superheated steam. The water ion generating device transforms the superheated steam into water ions. The lithium battery processing device performs reactions of molecular scission, pyrolysis and carbonization, and electrolytes and separators of the waste lithium batteries are treated by the water ions to form carbon residues, gas-liquid wastes, and inorganic wastes. The gas-liquid wastes are processed by the condensate tank and the plasma exhaust device to form harmless gases and liquids. The inorganic wastes are processed by the recovery processing device to produce the metals.

Abstract: Systems and methods for intelligent fan identification are described. In some embodiments, an Information Handling System (IHS) may include: an embedded controller (EC); and a memory coupled to the EC, the memory having program instructions stored thereon that, upon execution by the EC, cause the IHS to: detect a cooling fan configuration issue; determine that a number of cooling fans in the IHS has not changed between a previous configuration and a current configuration; and in response to the determination, abstain from identifying the cooling fan configuration issue as a cooling fan error.

Abstract: The present invention provides a PTX3 monoclonal antibody or antibody Fab fragment thereof and use thereof. The aforementioned monoclonal antibody or antibody Fab fragment thereof specifically inhibit or slow down the binding of PTX3 to the PTX3 receptor, and may be used for a kit and method for detecting PTX3, and a pharmaceutical composition which inhibits or slows down diseases or symptoms associated with PTX3 and PTX3 receptor binding, and a use thereof.

Abstract: The present application discloses a method, device, and system for processing a medical image. The method includes obtaining a source spinal image, identifying one or more vertebral bodies and one or more intervertebral discs comprised in the source spinal image, determining the vertebral body recognition results corresponding to the one or more vertebral bodies and the intervertebral disc recognition results corresponding to the one or more intervertebral discs, and determining target recognition results corresponding to the source spinal image based at least in part one on one or more of the vertebral body recognition results and the intervertebral disc recognition results.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: Various techniques are provided for generating reports of three dimensional (3D) images. The techniques include identifying a plurality of volume features in a 3D image using a first machine learning (ML) module trained with annotated 3D images, and identifying a plurality of semantic representations associated with the 3D image using a second ML module trained with the annotated 3D images and reports associated with the annotated 3D images. The techniques further include generating a report of the 3D image based on the volume features and the semantic representations using a third ML module trained with the reports and outputs generated by the first ML module and the second ML module using the annotated 3D images and the reports.

Abstract: A supporting mechanism with a rotating function is applied to a camera apparatus and includes a casing, a holder, an inner structural component and a damping component. The casing has a first opening. The inner structural component can be rotated relative to the casing. The holder is movably disposed inside the inner structural component and passes through the first opening. The damping component is disposed between the casing and the inner structural component.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A thermoset epoxy resin, its preparing composition and making process are disclosed. In particular, the thermoset epoxy resin is glycidyl ether of diphenolic bis-carbamate and formed by curing a one component epoxy composition and has a general structure as shown in formula (1).

Abstract: A sub-pixel array and a display are provided. The sub-pixel structure includes a driving module, a first selection module, a second selection module, a switch module, a first light-emitting element, and a second light-emitting element. The first selection module is configured to control conduction between the driving module and an anode of the first light-emitting element or conduction between the driving module and an anode of the second light-emitting element through a first control signal. The second selection module is configured to control grounding of a cathode of the first light-emitting element or grounding of a cathode of the second light-emitting element through a second control signal.