Abstract: A semiconductor device includes a substrate, a trench in the substrate, the trench having an inclined sidewall, a reflective layer over the inclined sidewall, a grating structure over the substrate, and a waveguide in the trench. The waveguide is configured to guide optical signals between the grating structure and the reflective layer.

Abstract: A bio-chip package comprises a substrate a first layer over the substrate comprising an image sensor. The bio-chip package also comprises a second layer over the first layer. The second layer comprises a waveguide system a grating coupler. The bio-chip package also comprises a third layer arranged to accommodate a fluid between a first-third layer portion and a second-third layer portion, and to allow the fluid to pass from a first side of the third layer to a second side of the third layer. The third layer comprises a material having a predetermined transparency with respect to a wavelength of a received source light, the waveguide system is configured to direct the received source light to the grating coupler, and the image sensor is configured to determine a change in the wavelength of the source light caused by a coupling between the source light and the fluid.

Abstract: A semiconductor device includes a first chip, a dielectric layer over the first chip, and a second chip over the dielectric layer. A conductive layer is embedded in the dielectric layer and is electrically coupled to the first chip and the second chip. The second chip includes an optical component. The first chip and the second chip are arranged on opposite sides of the dielectric layer in a thickness direction of the dielectric layer.

Abstract: The present disclosure, in some embodiments, relates to a semiconductor package. The semiconductor package includes a first chip attached to a first substrate and a thermal conductivity layer attached to the first chip. A molding compound encapsulates the chip and the thermal conductivity layer. Electrical connectors are arranged between the first substrate and a board. The molding compound covers upper surfaces of the thermal conductivity layer facing away from the electrical connectors.

Abstract: A method of making a grating in a waveguide includes forming a waveguide material over a substrate, the waveguide material having a thickness less than or equal to about 100 nanometers (nm). The method further includes forming a photoresist over the waveguide material and patterning the photoresist. The method further includes forming a first set of openings in the waveguide material through the patterned substrate and filling the first set of openings with a metal material.

Abstract: Some embodiments relate to a semiconductor package. The package includes a substrate having an upper surface and a lower surface. A first chip is disposed over a first portion of the upper surface of the substrate. A second chip is disposed over a second portion of the upper surface of the substrate. A first plurality of carbon nano material pillars are disposed over an uppermost surface of the first chip, and a second plurality of carbon nano material pillars are disposed over an uppermost surface of the second chip. A molding compound is disposed above the substrate, and encapsulates the first chip, the first plurality of carbon nano material pillars, the second chip, and the second plurality of carbon nano material pillars.

Abstract: A method of forming a semiconductor package includes providing a substrate, wherein the substrate has at least one chip attached on an upper surface of the substrate. An insulating barrier layer is deposited above the substrate, wherein the at least one chip is at least partially embedded within the insulating barrier layer. A thermally conductive layer is formed over the insulating barrier layer to at least partially encapsulate the at least one chip.

Abstract: The present disclosure, in some embodiments, relates to a method of forming a semiconductor package. The method may be performed by attaching a first thermal conductivity layer to an upper surface of a first chip, and attaching a second thermal conductivity layer to an upper surface of a second chip. A first support substrate is attached to lower surfaces of the first chip and the second chip. A molding compound is formed over the first support substrate and laterally surrounds the first chip and the second chip. The first support substrate is replaced with a package substrate after forming the molding compound over the first support substrate.

Abstract: A method of forming a semiconductor package includes providing a substrate, wherein the substrate has at least one chip attached on an upper surface of the substrate. An insulating barrier layer is deposited above the substrate, wherein the at least one chip is at least partially embedded within the insulating barrier layer. A thermally conductive layer is formed over the insulating barrier layer to at least partially encapsulate the at least one chip.

Abstract: A semiconductor device includes a substrate, a trench in the substrate, the trench having an inclined sidewall, a reflective layer over the inclined sidewall, a grating structure over the substrate, and a waveguide in the trench. The waveguide is configured to guide optical signals between the grating structure and the reflective layer.

Abstract: A semiconductor device, a package structure, and methods of forming the same are disclosed. An embodiment is a semiconductor device comprising a first optical device over a first substrate, a vertical waveguide on a top surface of the first optical device, and a second substrate over the vertical waveguide. The semiconductor device further comprises a lens capping layer on a top surface of the second substrate, wherein the lens capping layer is aligned with the vertical waveguide, and a second optical device over the lens capping layer.

Abstract: A semiconductor device includes a first chip, a dielectric layer over the first chip, and a second chip over the dielectric layer. A conductive layer is embedded in the dielectric layer and is electrically coupled to the first chip and the second chip. The second chip includes an optical component. The first chip and the second chip are arranged on opposite sides of the dielectric layer in a thickness direction of the dielectric layer.

Abstract: A method of forming a semiconductor package includes attaching a thermal conductivity layer to a chip. The chip has a first surface and a second surface. The thermal conductivity layer is attached to the first surface of the chip. The thermal conductivity layer provides a path through which heat generated from the chip is dissipated to the ambient. A substrate is attached to the second surface of the chip after attaching the thermal conductivity layer to the chip. A molding compound is formed to encapsulate the chip and the thermal conductivity layer.

Abstract: A bio-chip package comprises a substrate a first layer over the substrate comprising an image sensor. The bio-chip package also comprises a second layer over the first layer. The second layer comprises a waveguide system a grating coupler. The bio-chip package also comprises a third layer arranged to accommodate a fluid between a first-third layer portion and a second-third layer portion, and to allow the fluid to pass from a first side of the third layer to a second side of the third layer. The third layer comprises a material having a predetermined transparency with respect to a wavelength of a received source light, the waveguide system is configured to direct the received source light to the grating coupler, and the image sensor is configured to determine a change in the wavelength of the source light caused by a coupling between the source light and the fluid.

Abstract: A backside-illuminated photodetector structure includes a first reflecting region, a second reflecting region and a semiconductor region. The semiconductor region is between the first reflecting region and the second reflecting region. The semiconductor region comprises a first doped region and a second doped region.

Abstract: A method of making a grating in a waveguide includes forming a waveguide material over a substrate, the waveguide material having a thickness less than or equal to about 100 nanometers (nm). The method further includes forming a photoresist over the waveguide material and patterning the photoresist. The method further includes forming a first set of openings in the waveguide material through the patterned substrate and filling the first set of openings with a metal material.

Abstract: Some embodiments relate to a semiconductor package. The package includes a substrate having an upper surface and a lower surface. A first chip is disposed over a first portion of the upper surface of the substrate. A second chip is disposed over a second portion of the upper surface of the substrate. A first plurality of carbon nano material pillars are disposed over an uppermost surface of the first chip, and a second plurality of carbon nano material pillars are disposed over an uppermost surface of the second chip. A molding compound is disposed above the substrate, and encapsulates the first chip, the first plurality of carbon nano material pillars, the second chip, and the second plurality of carbon nano material pillars.

Abstract: A backside-illuminated photodetector structure includes a first reflecting region, a second reflecting region and a semiconductor region. The semiconductor region is between the first reflecting region and the second reflecting region. The semiconductor region comprises a first doped region and a second doped region.

Abstract: A system and method for manufacturing semiconductor devices is provided. An embodiment comprises using an etchant to remove a portion of a substrate to form an opening with a 45° angle with a major surface of the substrate. The etchant comprises a base, a surfactant, and an oxidant. The oxidant may be hydrogen peroxide.

Abstract: In some embodiments, the present disclosure relates to a package for holding a plurality of integrated circuits. The package includes a first conductive pad disposed over a first substrate and a second conductive pad disposed over a second substrate. The second conductive pad is a multi-layer structure having an uppermost metal layer including titanium or nickel. A molding structure surrounds the first substrate and the second substrate. A conductive structure is over the first substrate and the second substrate. The conductive structure is conductively coupled to the second conductive pad.