Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Abstract: A multi-gate semiconductor device is formed that provides a first fin element extending from a substrate. A gate structure extends over a channel region of the first fin element. The channel region of the first fin element includes a plurality of channel semiconductor layers each surrounded by a portion of the gate structure. A source/drain region of the first fin element is adjacent the gate structure. The source/drain region includes a first semiconductor layer, a dielectric layer over the first semiconductor layer, and a second semiconductor layer over the dielectric layer.

Abstract: A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: An optical water-quality detection apparatus includes a detection device, a biofilm-inhibition light source, a detection light source and a sensor. The detection device includes a detection chamber. The biofilm-inhibition light source is disposed outside the detection chamber and configured to emit biofilm-inhibition light. The detection light source is disposed outside the detection chamber and configured to emit detection light. The sensor is configured to sense the detection light penetrating the detection chamber. A beam of the detection light and a beam of the inhibition light overlaps as penetrating the detection chamber.

Abstract: Methods, non-transitory machine readable media, and computing devices that more efficiently and effectively manage storage quota enforcement are disclosed. With this technology, a quota ticket comprising a tally generation number (TGN) and a local allowed usage amount (AUA) are obtained. The local AUA comprises a portion of a global AUA associated with a quota rule. The local AUA is increased following receipt of another portion of the global AUA in a response from a cluster peer, when another TGN in the response matches the TGN and the local AUA is insufficient to execute a received storage operation associated with the quota rule. The local AUA is decreased by an amount corresponding to, and following execution of, the storage operation, when the increased local AUA is sufficient to execute the storage operation.

Abstract: An embodiment system, configured to clean a semiconductor package assembly, may include a sprayer device including a plurality of nozzles configured to direct a pressurized cleaning fluid toward the semiconductor package assembly; a conveyor configured to move the semiconductor package assembly relative to the sprayer device along a first direction; and a dryer spatially displaced from the sprayer device and configured to direct a pressurized gas flow toward the semiconductor package assembly to remove cleaning fluid introduced by the sprayer device. Each of the plurality of nozzles may be displaced from one another along a second direction to thereby generate respective separate spray distribution patterns. Adjacent nozzles may be further displaced from one another along a third direction to thereby a reduce an overlap of adjacent spray distribution patterns relative to a configuration in which the adjacent nozzles are not displaced from one another along the third direction.

Abstract: An under boat support (UBS) includes an electrostatic discharge (ESD) safe ceramic body and a conductive body. The ESD safe ceramic body is coupled to a surface of the conductive body by an adhesive, which may be resistant to high temperatures. A plurality of springs are present within the adhesive and extend from the surface of the conductive body to a surface of the ESD safe ceramic body. For example, first ends of the plurality of springs are electrically coupled to the surface of the conductive body, and second ends of the plurality of springs, which are opposite to corresponding ones of the first ends of the plurality of springs, are electrically coupled to the surface of the ESD safe ceramic body. The plurality of springs form electrical pathways such that the ESD safe ceramic body is electrically coupled to the conductive body.

Abstract: An apparatus for cleaning a package device is provided. The apparatus includes a package device loader; a package device unloader; a first cleaning area disposed between the package device loader and the package device unloader; and a conveyor. The conveyor includes a frame extending from the package device loader to the package device unloader and through the first cleaning area; and a belt wrapping the frame, wherein the belt includes a movable upper surface between the package device loader and the package device unloader, wherein the movable upper surface is configured to move relative to and over the frame, and a first distance between the movable upper surface and the frame in the first cleaning area increases in a direction from the package device loader to the package device unloader.

Abstract: A method includes forming a package component, the package component comprising an integrated circuit die, attaching the package component to a package substrate; placing a heat spreader over the package component and the package substrate to form an integrated circuit package, wherein a height of the integrated circuit package is in a range from 2.5 mm to 6 mm, and performing a first automatic optical inspection (AOI) process on the integrated circuit package using an AOI apparatus to determine if the orientation and alignment of the heat spreader with regards to the package substrate is within specification, wherein the AOI apparatus comprises a lens that has a maximum depth of field that is greater than the height of the integrated circuit package, and wherein during the first AOI process the depth of field encompasses an entirety of the height of the integrated circuit package.

Abstract: An embodiment system, configured to clean a semiconductor package assembly, may include a sprayer device including a plurality of nozzles configured to direct a pressurized cleaning fluid toward the semiconductor package assembly; a conveyor configured to move the semiconductor package assembly relative to the sprayer device along a first direction; and a dryer spatially displaced from the sprayer device and configured to direct a pressurized gas flow toward the semiconductor package assembly to remove cleaning fluid introduced by the sprayer device. Each of the plurality of nozzles may be displaced from one another along a second direction to thereby generate respective separate spray distribution patterns. Adjacent nozzles may be further displaced from one another along a third direction to thereby a reduce an overlap of adjacent spray distribution patterns relative to a configuration in which the adjacent nozzles are not displaced from one another along the third direction.

Abstract: An optical water-quality detection apparatus includes a detection device, a biofilm-inhibition light source, a detection light source and a sensor. The detection device includes a detection chamber. The biofilm-inhibition light source is disposed outside the detection chamber and configured to emit biofilm-inhibition light. The detection light source is disposed outside the detection chamber and configured to emit detection light. The sensor is configured to sense the detection light penetrating the detection chamber. A beam of the detection light and a beam of the inhibition light overlaps as penetrating the detection chamber.

Abstract: The present disclosure relates a lithographic substrate marking tool. The tool includes a first electromagnetic radiation source disposed within a housing and configured to generate a first type of electromagnetic radiation. A radiation guide is configured to provide the first type of electromagnetic radiation to a photosensitive material over a substrate. A second electromagnetic radiation source is disposed within the housing and is configured to generate a second type of electromagnetic radiation that is provided to the photosensitive material.

Abstract: Methods, non-transitory machine readable media, and computing devices that more efficiently and effectively manage storage quota enforcement are disclosed. With this technology, a quota ticket comprising a tally generation number (TGN) and a local allowed usage amount (AUA) are obtained. The local AUA comprises a portion of a global AUA associated with a quota rule. The local AUA is increased following receipt of another portion of the global AUA in a response from a cluster peer, when another TGN in the response matches the TGN and the local AUA is insufficient to execute a received storage operation associated with the quota rule. The local AUA is decreased by an amount corresponding to, and following execution of, the storage operation, when the increased local AUA is sufficient to execute the storage operation.

Abstract: Methods, non-transitory machine readable media, and computing devices that more efficiently and effectively manage storage quota enforcement are disclosed. With this technology, a quota ticket comprising a tally generation number (TGN) and a local allowed usage amount (AUA) are obtained. The local AUA comprises a portion of a global AUA associated with a quota rule. The local AUA is increased following receipt of another portion of the global AUA in a response from a cluster peer, when another TGN in the response matches the TGN and the local AUA is insufficient to execute a received storage operation associated with the quota rule. The local AUA is decreased by an amount corresponding to, and following execution of, the storage operation, when the increased local AUA is sufficient to execute the storage operation.

Abstract: A microneedle electroporation device is provided, including a housing, a positioning member, an intermediate plate, a first microneedle assembly, a second microneedle assembly, a socket, a first wire, and a second wire. The positioning member is connected to the housing and the intermediate plate. The intermediate plate includes a plurality of first holes and a plurality of second holes. The first microneedle assembly includes a plurality of first microneedles and a first metal connecting portion connected to the first microneedles. The first microneedles pass through the first holes. The second microneedle assembly includes a plurality of second microneedles and a second metal connecting portion connected to the second microneedles. The second microneedles pass through the second holes. The first microneedle assembly and the second microneedle assembly are electrically independent of each other. The first wire connects the socket to the first metal connecting portion.

Abstract: A residual toxicant detection device for testing residual toxicant in an aqueous solution is disclosed, which includes a first space cavity, a second space cavity, a connecting frame and a sensing cavity. The first space cavity includes a light source and a lens. The second space cavity includes a photo sensor and a circuit module. The connecting frame is configured to connect the first space cavity and the second space cavity. The sensing cavity for receiving an aqueous solution is formed between the first space cavity and the second space cavity and at one side of the connecting frame. The light source emits a light with a wavelength range. The photo sensor receives the sensing signal of the light passing through the sensing cavity. The circuit module is configured to calculate the absorbance and the variation in absorbance of the residual toxicants in the aqueous solution.

Abstract: A residual toxicant detection device for testing residual toxicant in an aqueous solution is disclosed, which includes a first space cavity, a second space cavity, a connecting frame and a sensing cavity. The first space cavity includes a light source and a lens. The second space cavity includes a photo sensor and a circuit module. The connecting frame is configured to connect the first space cavity and the second space cavity. The sensing cavity for receiving an aqueous solution is formed between the first space cavity and the second space cavity and at one side of the connecting frame. The light source emits a light with a wavelength range. The photo sensor receives the sensing signal of the light passing through the sensing cavity. The circuit module is configured to calculate the absorbance and the variation in absorbance of the residual toxicants in the aqueous solution.

Abstract: Various embodiments of the present application are directed towards an edge-exposure tool with a light emitting diode (LED), as well as a method for edge exposure using a LED. In some embodiments, the edge-exposure tool comprises a process chamber, a workpiece table, a LED, and a controller. The workpiece table is in the process chamber and is configured to support a workpiece covered by a photosensitive layer. The LED is in the process chamber and is configured to emit radiation towards the workpiece. A controller is configured to control the LED to expose an edge portion of the photosensitive layer, but not a center portion of the photosensitive layer, to the radiation emitted by the LED. The edge portion of the photosensitive layer extends along an edge of the workpiece in a closed path to enclose the center portion of the photosensitive layer.