Abstract: A liquid storage tank includes a housing, a piston located in the housing, a cover, an elastic element, and an outlet pipe. The cover is attached to the housing and has a support post extending toward the piston. The piston, the housing, and the cover define a tank chamber. The tank chamber is filled with cooling liquid. The elastic element is connected with the tank hosing and the piston. The elastic element is free from contact with the cooling liquid. The outlet pipe communicates with the tank chamber. An extension direction of an opening of the outlet pipe is not parallel to a direction of movement of the elastic element. When the cooling liquid is decreased, the piston compressed the tank chamber such that the elastic element is released. The tank chamber is continuously compressed by pairing the elastic element and the piston.

Abstract: A method of preparing polylactic acid (PLA) microsphere and polylactic-co-glycolic acid (PLGA) microsphere is provided, including the following steps. A first solution is provided, including polylactic acid or polylactic-co-glycolic acid and an organic solvent. A second solution is provided, including polyvinyl alcohol, sodium carboxymethyl cellulose and an aqueous solution. The first solution is added to the second solution and, at the same time, the second solution is agitated until polylactic acid is solidified to form a plurality of polylactic acid microspheres, or until polylactic-co-glycolic acid is solidified to form a plurality of polylactic-co-glycolic acid microspheres. The polylactic acid microspheres or polylactic-co-glycolic acid microspheres are collected.

Abstract: An integrated circuit (IC) device includes a substrate and a circuit region over the substrate. The circuit region includes at least one active region extending along a first direction, at least one gate region extending across the at least one active region and along a second direction transverse to the first direction, and at least one first input/output (IO) pattern configured to electrically couple the circuit region to external circuitry outside the circuit region. The at least one first IO pattern extends along a third direction oblique to both the first direction and the second direction.

Abstract: A memory device includes a substrate, a transistor disposed over the substrate, an interconnect structure disposed over and electrically connected to the transistor, and a memory stack disposed between two adjacent metallization layers of the interconnect structure. The memory stack includes a bottom electrode disposed over the substrate and electrically connected to a bit line, a memory layer disposed over the bottom electrode, a selector layer disposed over the memory layer, and a top electrode disposed over the selector layer and electrically connected to a word line. Besides, at least one moisture-resistant layer is provided adjacent to and in physical contact with the selector layer, and the at least one moisture-resistant layer includes an amorphous material.

Abstract: An optical integrated circuit (IC) structure includes: a substrate including a fiber slot formed in an upper surface of the substrate and extending from an edge of the substrate, and an undercut formed in the upper surface and extending from the fiber slot; a semiconductor layer disposed on the substrate; a dielectric structure disposed on the semiconductor layer; an interconnect structure disposed in the dielectric structure; a plurality of vents that extend through a coupling region of the dielectric structure and expose the undercut; a fiber cavity that extends through the coupling region of dielectric structure and exposes the fiber slot; and a barrier ring disposed in the dielectric structure, the barrier ring surrounding the interconnect structure and routed around the perimeter of the coupling region.

Abstract: A method includes determining a first motion plan and a second motion plan based on inputs and determining a preference for the first motion plan relative to the second motion plan. The method also includes identifying one of the inputs as a sensitive input that causes the preference for the first motion plan over the second motion plan, and presenting, using a display, information that describes the first motion plan. The information includes an explanation indicating the sensitive input as a reason why the first motion plan is preferred over the second motion plan. The method also includes communicating and initiating the preferred motion plan.

Abstract: A device-verification system is configured to verify the authenticity of an electronic device using a digital signature of the electronic device verified by a certificate authority. In some examples, the electronic device includes a NFC tag storing device hardware information, device public and private keys, and a device digital signature ciphertext. A user may utilize a personal device to read the information from the NFC tag and the personal device may include a software application configured to communicate the information to a cloud-based certificate authority. The certificate authority may include a distributed system (e.g., a blockchain ledger) utilized to verify, store, and subsequently retrieve data corresponding to the electronic device. The certificate authority is configured to utilize the device digital signature to verify the authenticity of the device.

Abstract: A knitted component comprising two yarns, forming at least a heel region of an upper for an article of footwear, where one of the yarns comprises a thermoplastic material. The outer surface may include a fused area comprising a first thermoplastic yarn. The inner surface may be at least partially formed with a second yarn and may substantially exclude the thermoplastic material. There may be a transitional area including a reduced amount of thermoplastic material relative to a fused area. The knitted component may include a cushioning material between layers of the knit element.

Abstract: The disclosure provides an electronic device, including a circuit board, multiple semiconductor components, a first light reflecting structure, and a second light reflecting structure. The circuit board includes a substrate, and the substrate may have a first surface and at least one side surface. The multiple semiconductor components are disposed on the first surface. The first light reflecting structure is disposed on the first surface. The second light reflecting structure is disposed on the first surface and the at least one side surface.

Abstract: A method includes bonding a first wafer to a second wafer, with a first plurality of dielectric layers in the first wafer and a second plurality of dielectric layers in the second wafer bonded between a first substrate of the first wafer and a second substrate in the second wafer. A first opening is formed in the first substrate, and the first plurality of dielectric layers and the second wafer are etched through the first opening to form a second opening. A metal pad in the second plurality of dielectric layers is exposed to the second opening. A conductive plug is formed extending into the first and the second openings.

Abstract: A method includes removing a dummy gate stack to form a trench between gate spacers, depositing a gate dielectric extending into the trench, and performing a first treatment process on the gate dielectric. The first treatment process is performed using a fluorine-containing gas. A first drive-in process is then performed to drive fluorine in the fluorine-containing gas into the gate dielectric. The method further includes performing a second treatment process on the gate dielectric, wherein the second treatment process is performed using the fluorine-containing gas, and performing a second drive-in process to drive fluorine in the fluorine-containing gas into the gate dielectric. After the second drive-in process, conductive layers are formed to fill the trench.

Abstract: A memory device includes a substrate, a bottom electrode disposed over the substrate, a top electrode disposed over the bottom electrode, and a phase change layer disposed between the top electrode and bottom electrode. The phase change layer includes a GeSbTe material that contains a Ge content of about 20 at % or less, a Sb content of about 30 at % or more, and a Te content of about 40 at % at or more.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A method includes depositing a high-k gate dielectric layer over and along sidewalls of a semiconductor fin. The method further includes depositing an n-type work function metal layer over the high-k gate dielectric layer and performing a passivation treatment on the high-k gate dielectric layer through the n-type work function metal layer. The passivation treatment comprises a remote plasma process. The method further includes depositing a fill metal over the n-type work function metal layer to form a metal gate stack over the high-k gate dielectric layer. The metal gate stack comprising the n-type work function metal layer and the fill metal.

Abstract: A semiconductor structure includes a substrate, a grating coupler structure over the substrate, a multi-layers film structure over the grating coupler structure. The multi-layers film structure include a first layer including a first refractive index, a second layer over the first layer and including a second refractive index and a third layer over the second layer and including a third refractive index. The second refractive index is greater than the first refractive index and is greater than the third refractive index of the third layer, and a thickness of each layer of the multi-layers film structure is within a range from ?/4 to ?2, ? is a wavelength of light.

Abstract: A coupling system includes an optical fiber configured to carry an optical signal. The coupling system further includes a chip in optical communication with the optical fiber. The chip includes a substrate. The chip further includes a grating on a first side of the substrate, wherein the grating is configured to receive the optical signal. The chip further includes an interconnect structure over the grating on the first side of the substrate, wherein the interconnect structure defines a cavity aligned with the grating. The chip further includes a first polysilicon layer on a second side of the substrate, wherein the second side of the substrate is opposite to the first side of the substrate.

Abstract: A photonic device includes a silicon layer, wherein the silicon layer extends from a waveguide region of the photonic device to a device region of the photonic device, and the silicon layer includes a waveguide portion in the waveguide region. The photonic device further includes a cladding layer over the waveguide portion, wherein the device region is free of the cladding layer. The photonic device further includes a low refractive index layer in direct contact with the cladding layer, wherein the low refractive index layer comprises silicon oxide, silicon carbide, silicon oxynitride, silicon carbon oxynitride, aluminum oxide or hafnium oxide. The photonic device further includes an interconnect structure over the low refractive index layer.

Abstract: A method of preparing polylactic acid (PLA) microsphere and polylactic-co-glycolic acid (PLGA) microsphere is provided, including the following steps. A first solution is provided, including polylactic acid or polylactic-co-glycolic acid and an organic solvent. A second solution is provided, including polyvinyl alcohol, sodium carboxymethyl cellulose and an aqueous solution. The first solution is added to the second solution and, at the same time, the second solution is agitated until polylactic acid is solidified to form a plurality of polylactic acid microspheres, or until polylactic-co-glycolic acid is solidified to form a plurality of polylactic-co-glycolic acid microspheres. The polylactic acid microspheres or polylactic-co-glycolic acid microspheres are collected.

Abstract: A knitted component having a first region located adjacent to a perimeter edge of the article, where the first region of the knitted component includes an inner surface and an outer surface. The outer surface may include a fused area formed with a thermoformed thermoplastic material included with a first yarn. The inner surface may be at least partially formed with the second yarn and may substantially exclude the thermoplastic material.

Abstract: At least one doped silicon region is formed in a silicon layer of a semiconductor substrate, and a silicon oxide layer is formed over the silicon layer. A germanium-containing material portion is formed in the semiconductor substrate to provide a p-n junction or a p-i-n junction including the germanium-containing material portion and one of the at least one doped silicon region. A capping material layer that is free of germanium is formed over the germanium-containing material portion. A first dielectric material layer is formed over the silicon oxide layer and the capping material layer. The first dielectric material layer includes a mesa region that is raised from the germanium-containing material portion by a thickness of the capping material layer. The capping material layer may be a silicon capping layer, or may be subsequently removed to form a cavity. Dark current is reduced for the germanium-containing material portion.