Patents by Inventor Ying Hsu

Ying Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240201458
    Abstract: An optical integrated circuit (IC) structure includes: a substrate including a fiber slot formed in an upper surface of the substrate and extending from an edge of the substrate, and an undercut formed in the upper surface and extending from the fiber slot; a semiconductor layer disposed on the substrate; a dielectric structure disposed on the semiconductor layer; an interconnect structure disposed in the dielectric structure; a plurality of vents that extend through a coupling region of the dielectric structure and expose the undercut; a fiber cavity that extends through the coupling region of dielectric structure and exposes the fiber slot; and a barrier ring disposed in the dielectric structure, the barrier ring surrounding the interconnect structure and routed around the perimeter of the coupling region.
    Type: Application
    Filed: February 27, 2024
    Publication date: June 20, 2024
    Inventors: Chen-Hao Huang, Sui-Ying Hsu, YuehYing Lee, Chia-Ping Lai, Chien-Ying Wu, Hau-Yan Lu
  • Publication number: 20240192597
    Abstract: A polymer is formed by a reaction of phenolic epoxy resin or bisphenol epoxy resin and carboxylic acid, wherein the phenolic epoxy resin has a chemical structure of wherein W is H, alkyl group, or halogen. R1 is methylene, methylene diphenyl, dimethylene benzene, tetrahydrodicyclopentadiene, or n=1 to 8. The bisphenol epoxy resin has a chemical structure of wherein Z is H or alkyl group; R4 is methylene, methylmethylene, dimethylmethylene, ethylmethylmethylene, bi(trifluoromethyl)methylene, fluorenylidene, or sulfonyl group; and p=1 to 10. The carboxylic acid has a chemical structure of HOOC—Ar—(—X)m, HOOC—R2, or a combination thereof, wherein Ar is benzene or naphthalene; X is hydroxy group, alkoxy group, or alkyl group, and at least one X is hydroxy group; m=1 to 3, wherein R2 is C3-7 alkyl group.
    Type: Application
    Filed: October 25, 2023
    Publication date: June 13, 2024
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yu-Ying HSU, Yao-Jheng HUANG, Ming-Tzung WU, Chin-Hua CHANG, Te-Yi CHANG
  • Patent number: 11964811
    Abstract: A liquid storage tank includes a housing, a piston located in the housing, a cover, an elastic element, and an outlet pipe. The cover is attached to the housing and has a support post extending toward the piston. The piston, the housing, and the cover define a tank chamber. The tank chamber is filled with cooling liquid. The elastic element is connected with the tank hosing and the piston. The elastic element is free from contact with the cooling liquid. The outlet pipe communicates with the tank chamber. An extension direction of an opening of the outlet pipe is not parallel to a direction of movement of the elastic element. When the cooling liquid is decreased, the piston compressed the tank chamber such that the elastic element is released. The tank chamber is continuously compressed by pairing the elastic element and the piston.
    Type: Grant
    Filed: June 21, 2022
    Date of Patent: April 23, 2024
    Assignee: DELTA ELECTRONICS, INC.
    Inventors: Yu-Jei Huang, Wei-Fang Wu, Chia-Ying Hsu, Chih-Chieh Lu
  • Publication number: 20240122856
    Abstract: A method of preparing polylactic acid (PLA) microsphere and polylactic-co-glycolic acid (PLGA) microsphere is provided, including the following steps. A first solution is provided, including polylactic acid or polylactic-co-glycolic acid and an organic solvent. A second solution is provided, including polyvinyl alcohol, sodium carboxymethyl cellulose and an aqueous solution. The first solution is added to the second solution and, at the same time, the second solution is agitated until polylactic acid is solidified to form a plurality of polylactic acid microspheres, or until polylactic-co-glycolic acid is solidified to form a plurality of polylactic-co-glycolic acid microspheres. The polylactic acid microspheres or polylactic-co-glycolic acid microspheres are collected.
    Type: Application
    Filed: December 27, 2023
    Publication date: April 18, 2024
    Inventors: Ming-Thau SHEU, Yu-Ying HSU, Yu-De SU, Yu-Hsuan LIU, Pu-Sheng WEI
  • Patent number: 11940659
    Abstract: An optical integrated circuit (IC) structure includes: a substrate including a fiber slot formed in an upper surface of the substrate and extending from an edge of the substrate, and an undercut formed in the upper surface and extending from the fiber slot; a semiconductor layer disposed on the substrate; a dielectric structure disposed on the semiconductor layer; an interconnect structure disposed in the dielectric structure; a plurality of vents that extend through a coupling region of the dielectric structure and expose the undercut; a fiber cavity that extends through the coupling region of dielectric structure and exposes the fiber slot; and a barrier ring disposed in the dielectric structure, the barrier ring surrounding the interconnect structure and routed around the perimeter of the coupling region.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chen-Hao Huang, Hau-Yan Lu, Sui-Ying Hsu, Yuehying Lee, Chien-Ying Wu, Chia-Ping Lai
  • Publication number: 20240084487
    Abstract: A knitted component comprising two yarns, forming at least a heel region of an upper for an article of footwear, where one of the yarns comprises a thermoplastic material. The outer surface may include a fused area comprising a first thermoplastic yarn. The inner surface may be at least partially formed with a second yarn and may substantially exclude the thermoplastic material. There may be a transitional area including a reduced amount of thermoplastic material relative to a fused area. The knitted component may include a cushioning material between layers of the knit element.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Inventors: Jessica Green, Chun-Ying Hsu, Jaroslav J. Lupinek, Darryl Matthews, William C. McFarland, II, Chun-Yao Tu, Yi-Ning Yang, Cheng-Ying Han
  • Publication number: 20240045141
    Abstract: A semiconductor structure includes a substrate, a grating coupler structure over the substrate, a multi-layers film structure over the grating coupler structure. The multi-layers film structure include a first layer including a first refractive index, a second layer over the first layer and including a second refractive index and a third layer over the second layer and including a third refractive index. The second refractive index is greater than the first refractive index and is greater than the third refractive index of the third layer, and a thickness of each layer of the multi-layers film structure is within a range from ?/4 to ?2, ? is a wavelength of light.
    Type: Application
    Filed: August 3, 2022
    Publication date: February 8, 2024
    Inventors: CHIH-TSUNG SHIH, WEI-KANG LIU, SUI-YING HSU, JING-HWANG YANG, YINGKIT FELIX TSUI
  • Patent number: 11892678
    Abstract: A photonic device includes a silicon layer, wherein the silicon layer extends from a waveguide region of the photonic device to a device region of the photonic device, and the silicon layer includes a waveguide portion in the waveguide region. The photonic device further includes a cladding layer over the waveguide portion, wherein the device region is free of the cladding layer. The photonic device further includes a low refractive index layer in direct contact with the cladding layer, wherein the low refractive index layer comprises silicon oxide, silicon carbide, silicon oxynitride, silicon carbon oxynitride, aluminum oxide or hafnium oxide. The photonic device further includes an interconnect structure over the low refractive index layer.
    Type: Grant
    Filed: August 26, 2021
    Date of Patent: February 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chien-Ying Wu, Yuehying Lee, Sui-Ying Hsu, Chen-Hao Huang, Chien-Chang Lee, Chia-Ping Lai
  • Patent number: 11892681
    Abstract: A coupling system includes an optical fiber configured to carry an optical signal. The coupling system further includes a chip in optical communication with the optical fiber. The chip includes a substrate. The chip further includes a grating on a first side of the substrate, wherein the grating is configured to receive the optical signal. The chip further includes an interconnect structure over the grating on the first side of the substrate, wherein the interconnect structure defines a cavity aligned with the grating. The chip further includes a first polysilicon layer on a second side of the substrate, wherein the second side of the substrate is opposite to the first side of the substrate.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: February 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Hao Huang, Hau-Yan Lu, Sui-Ying Hsu, Yuehying Lee, Chien-Ying Wu, Chien-Chang Lee, Chia-Ping Lai
  • Patent number: 11883536
    Abstract: A method of preparing polylactic acid (PLA) microsphere and polylactic-co-glycolic acid (PLGA) microsphere is provided, including the following steps. A first solution is provided, including polylactic acid or polylactic-co-glycolic acid and an organic solvent. A second solution is provided, including polyvinyl alcohol, sodium carboxymethyl cellulose and an aqueous solution. The first solution is added to the second solution and, at the same time, the second solution is agitated until polylactic acid is solidified to form a plurality of polylactic acid microspheres, or until polylactic-co-glycolic acid is solidified to form a plurality of polylactic-co-glycolic acid microspheres. The polylactic acid microspheres or polylactic-co-glycolic acid microspheres are collected.
    Type: Grant
    Filed: March 31, 2021
    Date of Patent: January 30, 2024
    Assignees: TAIPEI MEDICAL UNIVERSITY, PANION & BF BIOTECH INC.
    Inventors: Ming-Thau Sheu, Yu-Ying Hsu, Yu-De Su, Yu-Hsuan Liu, Pu-Sheng Wei
  • Patent number: 11866861
    Abstract: A knitted component having a first region located adjacent to a perimeter edge of the article, where the first region of the knitted component includes an inner surface and an outer surface. The outer surface may include a fused area formed with a thermoformed thermoplastic material included with a first yarn. The inner surface may be at least partially formed with the second yarn and may substantially exclude the thermoplastic material.
    Type: Grant
    Filed: April 29, 2022
    Date of Patent: January 9, 2024
    Assignee: NIKE, Inc.
    Inventors: Jessica Green, Chun-Ying Hsu, Jaroslav J. Lupinek, Darryl Matthews, William C. McFarland, II, Chun-Yao Tu, Yi-Ning Yang, Cheng-Ying Han
  • Patent number: 11848390
    Abstract: At least one doped silicon region is formed in a silicon layer of a semiconductor substrate, and a silicon oxide layer is formed over the silicon layer. A germanium-containing material portion is formed in the semiconductor substrate to provide a p-n junction or a p-i-n junction including the germanium-containing material portion and one of the at least one doped silicon region. A capping material layer that is free of germanium is formed over the germanium-containing material portion. A first dielectric material layer is formed over the silicon oxide layer and the capping material layer. The first dielectric material layer includes a mesa region that is raised from the germanium-containing material portion by a thickness of the capping material layer. The capping material layer may be a silicon capping layer, or may be subsequently removed to form a cavity. Dark current is reduced for the germanium-containing material portion.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: December 19, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chen-Hao Huang, Hau-Yan Lu, Sui-Ying Hsu, YuehYing Lee, Chien-Ying Wu, Chia-Ping Lai
  • Publication number: 20230384527
    Abstract: A method of making a photonic device includes depositing a cladding layer over a silicon layer. The method further includes patterning the cladding layer to expose a first portion of the silicon layer, wherein a second portion of the silicon layer is covered by the patterned cladding layer, and a waveguide portion is in the second portion of the silicon layer. The method further includes depositing a low refractive index layer directly over the patterned cladding layer, wherein a refractive index of the low refractive index layer is less than a refractive index of silicon nitride.
    Type: Application
    Filed: August 10, 2023
    Publication date: November 30, 2023
    Inventors: Chien-Ying WU, Yuehying LEE, Sui-Ying HSU, Chen-Hao HUANG, Chien-Chang LEE, Chia-Ping LAI
  • Publication number: 20230384528
    Abstract: A method of using a coupling system includes aligning an optical fiber with a cavity in a chip, wherein aligning the optical fiber comprises orienting the fiber within an angle ranging from about 88-degrees to about 92-degrees with respect to a top surface of the chip. The method further includes emitting an optical signal from the optical fiber. The method further includes redirecting the optical signal into a waveguide using a grating positioned on an opposite side of the cavity from the optical fiber.
    Type: Application
    Filed: August 10, 2023
    Publication date: November 30, 2023
    Inventors: Sui-Ying HSU, Yuehying LEE, Chien-Ying WU, Chen-Hao HUANG, Chien-Chang LEE, Chia-Ping LAI
  • Publication number: 20230384526
    Abstract: A method of making a chip includes depositing a first polysilicon layer on a top surface and a bottom surface of a substrate. The method further includes patterning the first polysilicon layer to define a recess, wherein the first polysilicon layer is completed removed from the recess. The method further includes implanting dopants into the substrate to define an implant region. The method further includes depositing a contact etch stop layer (CESL) in the recess, wherein the CESL covers the implant region. The method further includes patterning the CESL to define a CESL block. The method further includes forming a waveguide and a grating in the substrate. The method further includes forming an interconnect structure over the waveguide, the grating and the CESL block. The method further includes etching the interconnect structure to define a cavity aligned with the grating.
    Type: Application
    Filed: August 10, 2023
    Publication date: November 30, 2023
    Inventors: Chen-Hao HUANG, Hau-Yan LU, Sui-Ying HSU, Yuehying LEE, Chien-Ying WU, Chien-Chang LEE, Chia-Ping LAI
  • Publication number: 20230358959
    Abstract: A photonic device includes an optical coupler, a photodetector, a waveguide structure, a metal-dielectric stack, a contact, an interlayer dielectric layer, and a protection layer. The optical coupler, the photodetector, and the waveguide structure are over a substrate. The waveguide structure is laterally connected to the optical couple. A top of the waveguide structure is lower than a top of the optical coupler. The metal-dielectric stack is over the optical coupler, the photodetector, and the waveguide structure. The metal-dielectric stack has a hole above the optical coupler. The contact connects the photodetector to the metal-dielectric stack. The interlayer dielectric layer is below the metal-dielectric stack and surrounds the contact. The protection layer lines the hole of the metal-dielectric stack. A bottom surface of the protection layer is lower than a top surface of the contact.
    Type: Application
    Filed: July 14, 2023
    Publication date: November 9, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Sui-Ying HSU, Yueh-Ying LEE, Chien-Ying WU, Chen-Hao HUANG, Chien-Chang LEE, Chia-Ping LAI
  • Publication number: 20230313606
    Abstract: An electric curtain includes an upper beam, two curtain ropes, a curtain body and a lower beam. The upper beam includes a rotating shaft, a pivotal member, two rope winders, a controller and a wireless control unit installed inside the controller. The wireless control unit has the technical feature of receiving and matching with a wireless transmission communication protocol originated from the external, thereby allowing the electric curtain to achieve the effect of establishing the most optimal electrical conduction and wireless communication transmission between the two based on the external wireless transmission communication protocol selected and matched.
    Type: Application
    Filed: August 12, 2022
    Publication date: October 5, 2023
    Applicant: CHING FENG HOME FASHIONS CO., LTD.
    Inventors: CHANG-YU HSIEH, SHENG-YING HSU, WEN-YING LIANG
  • Patent number: 11753568
    Abstract: An adhesive composition includes 0.1 to 1 part by weight of nano panicles, 50 to 95 parts by weight of acrylate resin, and 5 to 50 parts by weight of a monomer or oligomer of acrylate or acrylic acid containing multi-functional groups, and the acrylate resin and the monomer or oligomer of acrylate or acrylic acid containing multi-functional groups have a total weight of 100 parts by weight, in which the acrylate resin has a weight average molecular weight of 100,000 to 1,500,000. The nano particle has a shell covering parts of the surface of the core, and acrylate groups grafted to the surface of the core.
    Type: Grant
    Filed: February 28, 2022
    Date of Patent: September 12, 2023
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ming-Tzung Wu, Te-Yi Chang, Yao-Jheng Huang, Yu-Chin Lin, Chen-Cheng Yu, Yu-Ying Hsu, Shuang-Huei Chen
  • Patent number: 11740409
    Abstract: A photonic device includes an optical coupler, a waveguide structure, a metal-dielectric stack, and a protection layer. The optical coupler is over a semiconductor substrate. The waveguide structure is over the semiconductor substrate and laterally connected to the optical coupler. A top of the waveguide structure is lower than a top of the optical coupler. The metal-dielectric stack is over the optical coupler and the waveguide structure. The metal-dielectric stack has a hole above the optical coupler. The protection layer lines the hole of the metal-dielectric stack.
    Type: Grant
    Filed: May 9, 2022
    Date of Patent: August 29, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Sui-Ying Hsu, Yueh-Ying Lee, Chien-Ying Wu, Chen-Hao Huang, Chien-Chang Lee, Chia-Ping Lai
  • Publication number: 20230228757
    Abstract: The invention relates to a method for judging risk of suffering kidney cancer. The method includes detecting a PSMB9 protein concentration value from a test sample. And a risk factor value is obtained after processing the PSMB9 protein concentration value with an age. When the score of the risk factor value is greater than a defined threshold value of the risk factor threshold value, then the test sample is classified as a high risk sample of a of potential kidney cancer patient.
    Type: Application
    Filed: July 5, 2022
    Publication date: July 20, 2023
    Inventors: YI-TING CHEN, RONG-SHING CHANG, YU CHANG, CHIEN-LUN CHEN, KAI-JIE YU, YING-HSU CHANG