Patents by Inventor Ying-Hsun CHEN
Ying-Hsun CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11955501Abstract: The present disclosure describes a method for the formation of mirror micro-structures on radiation-sensing regions of image sensor devices. The method includes forming an opening within a front side surface of a substrate; forming a conformal implant layer on bottom and sidewall surfaces of the opening; growing a first epitaxial layer on the bottom and the sidewall surfaces of the opening; depositing a second epitaxial layer on the first epitaxial layer to fill the opening, where the second epitaxial layer forms a radiation-sensing region. The method further includes depositing a stack on exposed surfaces of the second epitaxial layer, where the stack includes alternating pairs of a high-refractive index material layer and a low-refractive index material layer.Type: GrantFiled: June 6, 2022Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Yu Liao, Tsai-Hao Hung, Ying-Hsun Chen
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Patent number: 11923396Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.Type: GrantFiled: April 18, 2022Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Wei Hsu, Tsai-Hao Hung, Chung-Yu Lin, Ying-Hsun Chen
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Publication number: 20230411391Abstract: A complementary metal oxide semiconductor (CMOS) device includes a transistor of a first type formed over a first substrate, and a transistor of a second type formed over a second substrate. The CMOS device is formed when the transistor of the first type formed on the first substrate is bonded to the transistor of the second type formed over the second substrate.Type: ApplicationFiled: August 7, 2023Publication date: December 21, 2023Inventors: Chung-Liang CHENG, Ying-Hsun CHEN
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Publication number: 20230326979Abstract: A semiconductor device and method of forming the semiconductor device are disclosed. The method includes forming first and second conductive structures on a semiconductor substrate, forming one or more dielectric layers between the first and second conductive structures, covering the one or more dielectric layers with a first masking layer, forming a first opening in the first masking layer, depositing a conductive material in the first opening to form a field plate structure, and electrically connecting the field plate structure to another conductor.Type: ApplicationFiled: April 7, 2022Publication date: October 12, 2023Inventors: Tao-Cheng Liu, Ying-Hsun Chen
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Patent number: 11688754Abstract: Photonic devices and methods having an increased quantum effect length are provided. In some embodiments, a photonic device includes a substrate having a first surface. A cavity extends into the substrate from the first surface to a second surface. A semiconductor layer is disposed on the second surface in the cavity of the substrate, and a cover layer is disposed on the semiconductor layer. The semiconductor layer is configured to receive incident radiation through the substrate and to totally internally reflect the radiation at an interface between the semiconductor layer and the cover layer.Type: GrantFiled: May 6, 2020Date of Patent: June 27, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsai-Hao Hung, Tao-Cheng Liu, Ying-Hsun Chen
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MICRO-ELECTROMECHANICAL SYSTEM DEVICE USING A METALLIC MOVABLE PART AND METHODS FOR FORMING THE SAME
Publication number: 20230066841Abstract: A micro-electromechanical system (MEMS) device includes a movable comb structure located in a cavity within an enclosure, and a stationary structure affixed to the enclosure. The movable comb structure includes a comb shaft portion and movable comb fingers laterally protruding from the comb shaft portion. The movable comb structure includes a metallic material portion. The movable structure and the stationary structure are configured to generate an electrical output signal based on lateral movement of the movable structure relative to the stationary structure.Type: ApplicationFiled: August 27, 2021Publication date: March 2, 2023Inventors: Tao-Cheng LIU, Chen-Hsuan YEN, Ying-Hsun CHEN -
Publication number: 20230066352Abstract: A first-tier capacitor assembly is formed, which includes a first alternating layer stack embedded within a first substrate and including at least two first metallic electrode layers interlaced with at least one first node dielectric layer, and first metallic bonding pads located on a first front surface. A second-tier capacitor assembly is formed, which includes a second alternating layer stack embedded within a second substrate and including at least two second metallic electrode layers interlaced with at least one second node dielectric layers, and second metallic bonding pads located on a second backside surface. The second metallic bonding pads are bonded to the first metallic bonding pads such that each of the at least two first metallic electrode layers contacts a respective one of the at least two second metallic electrode layers. A capacitor with increased capacitance is provided.Type: ApplicationFiled: August 27, 2021Publication date: March 2, 2023Inventors: Tao-Cheng Liu, Ying-Hsun Chen
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Publication number: 20230043634Abstract: A photonic structure is provided. The photonic structure includes a guiding region, a sensing region, and logic region. The guiding region has a first side and a second side opposite to the first side. The sensing region is disposed on the second side of the guiding region. The logic region is disposed on a side of the sensing region opposite to the guiding region. The guiding region, the sensing region, and the logic region are stacked along a vertical direction. A method for manufacturing the photonic structure is also provided.Type: ApplicationFiled: February 15, 2022Publication date: February 9, 2023Inventors: TAO-CHENG LIU, YING-HSUN CHEN
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Publication number: 20220392945Abstract: A method is provided that includes forming a cavity in a substrate. The cavity is formed to extend into the substrate from a first surface to a second surface. Sidewall spacers are formed on sidewalls of the substrate in the cavity. A semiconductor layer is formed on the second surface in the cavity of the substrate, and the semiconductor layer abuts the sidewall spacers in the cavity.Type: ApplicationFiled: August 9, 2022Publication date: December 8, 2022Inventors: Tsai-Hao Hung, Tao-Cheng Liu, Ying-Hsun Chen
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Publication number: 20220352158Abstract: A complementary metal oxide semiconductor (CMOS) device and method of making including a transistor of a first type formed on a first substrate and a transistor of a second type formed on a second substrate.Type: ApplicationFiled: April 28, 2021Publication date: November 3, 2022Inventors: Chung-Liang CHENG, Ying-Hsun CHEN
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Publication number: 20220310679Abstract: The present disclosure describes a method for the formation of mirror micro-structures on radiation-sensing regions of image sensor devices. The method includes forming an opening within a front side surface of a substrate; forming a conformal implant layer on bottom and sidewall surfaces of the opening; growing a first epitaxial layer on the bottom and the sidewall surfaces of the opening; depositing a second epitaxial layer on the first epitaxial layer to fill the opening, where the second epitaxial layer forms a radiation-sensing region. The method further includes depositing a stack on exposed surfaces of the second epitaxial layer, where the stack includes alternating pairs of a high-refractive index material layer and a low-refractive index material layer.Type: ApplicationFiled: June 6, 2022Publication date: September 29, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Yu Liao, Tsai-Hao Hung, Ying-Hsun Chen
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Publication number: 20220238591Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.Type: ApplicationFiled: April 18, 2022Publication date: July 28, 2022Inventors: Chun-Wei HSU, Tsai-Hao HUNG, Chung-Yu LIN, Ying-Hsun CHEN
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Patent number: 11355544Abstract: The present disclosure describes a method for the formation of mirror micro-structures on radiation-sensing regions of image sensor devices. The method includes forming an opening within a front side surface of a substrate; forming a conformal implant layer on bottom and sidewall surfaces of the opening; growing a first epitaxial layer on the bottom and the sidewall surfaces of the opening; depositing a second epitaxial layer on the first epitaxial layer to fill the opening, where the second epitaxial layer forms a radiation-sensing region. The method further includes depositing a stack on exposed surfaces of the second epitaxial layer, where the stack includes alternating pairs of a high-refractive index material layer and a low-refractive index material layer.Type: GrantFiled: March 26, 2020Date of Patent: June 7, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Yu Liao, Tsai-Hao Hung, Ying-Hsun Chen
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Patent number: 11309347Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.Type: GrantFiled: February 11, 2020Date of Patent: April 19, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Wei Hsu, Tsai-Hao Hung, Chung-Yu Lin, Ying-Hsun Chen
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Patent number: 11227958Abstract: An integrated circuit includes a photodetector. The photodetector includes a circular optical grating formed in an annular trench in a semiconductor substrate. The circular optical grating includes dielectric fins and photosensitive fins positioned in the annular trench. The circular optical grating is configured to receive incident light and to direct the incident light around the annular trench through the dielectric fins and the photosensitive fins until the light is absorbed by one of the photosensitive fins.Type: GrantFiled: April 30, 2020Date of Patent: January 18, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tao-Cheng Liu, Tsai-Hao Hung, Ying-Hsun Chen
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Publication number: 20210351221Abstract: Photonic devices and methods having an increased quantum effect length are provided. In some embodiments, a photonic device includes a substrate having a first surface. A cavity extends into the substrate from the first surface to a second surface. A semiconductor layer is disposed on the second surface in the cavity of the substrate, and a cover layer is disposed on the semiconductor layer. The semiconductor layer is configured to receive incident radiation through the substrate and to totally internally reflect the radiation at an interface between the semiconductor layer and the cover layer.Type: ApplicationFiled: May 6, 2020Publication date: November 11, 2021Inventors: Tsai-Hao HUNG, Tao-Cheng LIU, Ying-Hsun CHEN
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Publication number: 20210343883Abstract: An integrated circuit includes a photodetector. The photodetector includes a circular optical grating formed in an annular trench in a semiconductor substrate. The circular optical grating includes dielectric fins and photosensitive fins positioned in the annular trench. The circular optical grating is configured to receive incident light and to direct the incident light around the annular trench through the dielectric fins and the photosensitive fins until the light is absorbed by one of the photosensitive fins.Type: ApplicationFiled: April 30, 2020Publication date: November 4, 2021Inventors: Tao-Cheng LIU, Tsai-Hao HUNG, Ying-Hsun CHEN
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Publication number: 20210305291Abstract: The present disclosure describes a method for the formation of mirror micro-structures on radiation-sensing regions of image sensor devices. The method includes forming an opening within a front side surface of a substrate; forming a conformal implant layer on bottom and sidewall surfaces of the opening; growing a first epitaxial layer on the bottom and the sidewall surfaces of the opening; depositing a second epitaxial layer on the first epitaxial layer to fill the opening, where the second epitaxial layer forms a radiation-sensing region. The method further includes depositing a stack on exposed surfaces of the second epitaxial layer, where the stack includes alternating pairs of a high-refractive index material layer and a low-refractive index material layer.Type: ApplicationFiled: March 26, 2020Publication date: September 30, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Yu LIAO, Tsai-Hao HUNG, Ying-Hsun CHEN
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Publication number: 20210249464Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. The configuration of the dielectric structures and the photosensitive material promote total internal reflection of light within a passivation layer.Type: ApplicationFiled: February 11, 2020Publication date: August 12, 2021Inventors: Chun-Wei HSU, Tsai-Hao HUNG, Chung-Yu LIN, Ying-Hsun CHEN
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Patent number: 10424549Abstract: A method of forming a trench structure is provided. The method includes depositing a silicon carbide (SiC) layer on a top metal layer, forming a first passivation layer on the SiC layer, removing a portion of the first passivation layer to form a first opening, forming a second passivation layer on the first passivation layer, the second passivation layer including a first portion in the first opening, and forming a second opening by removing a part of the first portion of the second passivation layer. The forming the second opening exposes the top metal layer.Type: GrantFiled: October 29, 2018Date of Patent: September 24, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Fu-Chiang Kuo, Shih-Chi Kuo, Tsung-Hsien Lee, Ying-Hsun Chen