Patents by Inventor Ying-Hsun CHEN

Ying-Hsun CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230066841
    Abstract: A micro-electromechanical system (MEMS) device includes a movable comb structure located in a cavity within an enclosure, and a stationary structure affixed to the enclosure. The movable comb structure includes a comb shaft portion and movable comb fingers laterally protruding from the comb shaft portion. The movable comb structure includes a metallic material portion. The movable structure and the stationary structure are configured to generate an electrical output signal based on lateral movement of the movable structure relative to the stationary structure.
    Type: Application
    Filed: August 27, 2021
    Publication date: March 2, 2023
    Inventors: Tao-Cheng LIU, Chen-Hsuan YEN, Ying-Hsun CHEN
  • Publication number: 20230043634
    Abstract: A photonic structure is provided. The photonic structure includes a guiding region, a sensing region, and logic region. The guiding region has a first side and a second side opposite to the first side. The sensing region is disposed on the second side of the guiding region. The logic region is disposed on a side of the sensing region opposite to the guiding region. The guiding region, the sensing region, and the logic region are stacked along a vertical direction. A method for manufacturing the photonic structure is also provided.
    Type: Application
    Filed: February 15, 2022
    Publication date: February 9, 2023
    Inventors: TAO-CHENG LIU, YING-HSUN CHEN
  • Publication number: 20220392945
    Abstract: A method is provided that includes forming a cavity in a substrate. The cavity is formed to extend into the substrate from a first surface to a second surface. Sidewall spacers are formed on sidewalls of the substrate in the cavity. A semiconductor layer is formed on the second surface in the cavity of the substrate, and the semiconductor layer abuts the sidewall spacers in the cavity.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 8, 2022
    Inventors: Tsai-Hao Hung, Tao-Cheng Liu, Ying-Hsun Chen
  • Publication number: 20220352158
    Abstract: A complementary metal oxide semiconductor (CMOS) device and method of making including a transistor of a first type formed on a first substrate and a transistor of a second type formed on a second substrate.
    Type: Application
    Filed: April 28, 2021
    Publication date: November 3, 2022
    Inventors: Chung-Liang CHENG, Ying-Hsun CHEN
  • Publication number: 20220310679
    Abstract: The present disclosure describes a method for the formation of mirror micro-structures on radiation-sensing regions of image sensor devices. The method includes forming an opening within a front side surface of a substrate; forming a conformal implant layer on bottom and sidewall surfaces of the opening; growing a first epitaxial layer on the bottom and the sidewall surfaces of the opening; depositing a second epitaxial layer on the first epitaxial layer to fill the opening, where the second epitaxial layer forms a radiation-sensing region. The method further includes depositing a stack on exposed surfaces of the second epitaxial layer, where the stack includes alternating pairs of a high-refractive index material layer and a low-refractive index material layer.
    Type: Application
    Filed: June 6, 2022
    Publication date: September 29, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Yu Liao, Tsai-Hao Hung, Ying-Hsun Chen
  • Publication number: 20220238591
    Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.
    Type: Application
    Filed: April 18, 2022
    Publication date: July 28, 2022
    Inventors: Chun-Wei HSU, Tsai-Hao HUNG, Chung-Yu LIN, Ying-Hsun CHEN
  • Patent number: 11355544
    Abstract: The present disclosure describes a method for the formation of mirror micro-structures on radiation-sensing regions of image sensor devices. The method includes forming an opening within a front side surface of a substrate; forming a conformal implant layer on bottom and sidewall surfaces of the opening; growing a first epitaxial layer on the bottom and the sidewall surfaces of the opening; depositing a second epitaxial layer on the first epitaxial layer to fill the opening, where the second epitaxial layer forms a radiation-sensing region. The method further includes depositing a stack on exposed surfaces of the second epitaxial layer, where the stack includes alternating pairs of a high-refractive index material layer and a low-refractive index material layer.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: June 7, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Yu Liao, Tsai-Hao Hung, Ying-Hsun Chen
  • Patent number: 11309347
    Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: April 19, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Wei Hsu, Tsai-Hao Hung, Chung-Yu Lin, Ying-Hsun Chen
  • Patent number: 11227958
    Abstract: An integrated circuit includes a photodetector. The photodetector includes a circular optical grating formed in an annular trench in a semiconductor substrate. The circular optical grating includes dielectric fins and photosensitive fins positioned in the annular trench. The circular optical grating is configured to receive incident light and to direct the incident light around the annular trench through the dielectric fins and the photosensitive fins until the light is absorbed by one of the photosensitive fins.
    Type: Grant
    Filed: April 30, 2020
    Date of Patent: January 18, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tao-Cheng Liu, Tsai-Hao Hung, Ying-Hsun Chen
  • Publication number: 20210351221
    Abstract: Photonic devices and methods having an increased quantum effect length are provided. In some embodiments, a photonic device includes a substrate having a first surface. A cavity extends into the substrate from the first surface to a second surface. A semiconductor layer is disposed on the second surface in the cavity of the substrate, and a cover layer is disposed on the semiconductor layer. The semiconductor layer is configured to receive incident radiation through the substrate and to totally internally reflect the radiation at an interface between the semiconductor layer and the cover layer.
    Type: Application
    Filed: May 6, 2020
    Publication date: November 11, 2021
    Inventors: Tsai-Hao HUNG, Tao-Cheng LIU, Ying-Hsun CHEN
  • Publication number: 20210343883
    Abstract: An integrated circuit includes a photodetector. The photodetector includes a circular optical grating formed in an annular trench in a semiconductor substrate. The circular optical grating includes dielectric fins and photosensitive fins positioned in the annular trench. The circular optical grating is configured to receive incident light and to direct the incident light around the annular trench through the dielectric fins and the photosensitive fins until the light is absorbed by one of the photosensitive fins.
    Type: Application
    Filed: April 30, 2020
    Publication date: November 4, 2021
    Inventors: Tao-Cheng LIU, Tsai-Hao HUNG, Ying-Hsun CHEN
  • Publication number: 20210305291
    Abstract: The present disclosure describes a method for the formation of mirror micro-structures on radiation-sensing regions of image sensor devices. The method includes forming an opening within a front side surface of a substrate; forming a conformal implant layer on bottom and sidewall surfaces of the opening; growing a first epitaxial layer on the bottom and the sidewall surfaces of the opening; depositing a second epitaxial layer on the first epitaxial layer to fill the opening, where the second epitaxial layer forms a radiation-sensing region. The method further includes depositing a stack on exposed surfaces of the second epitaxial layer, where the stack includes alternating pairs of a high-refractive index material layer and a low-refractive index material layer.
    Type: Application
    Filed: March 26, 2020
    Publication date: September 30, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yu LIAO, Tsai-Hao HUNG, Ying-Hsun CHEN
  • Publication number: 20210249464
    Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. The configuration of the dielectric structures and the photosensitive material promote total internal reflection of light within a passivation layer.
    Type: Application
    Filed: February 11, 2020
    Publication date: August 12, 2021
    Inventors: Chun-Wei HSU, Tsai-Hao HUNG, Chung-Yu LIN, Ying-Hsun CHEN
  • Patent number: 10424549
    Abstract: A method of forming a trench structure is provided. The method includes depositing a silicon carbide (SiC) layer on a top metal layer, forming a first passivation layer on the SiC layer, removing a portion of the first passivation layer to form a first opening, forming a second passivation layer on the first passivation layer, the second passivation layer including a first portion in the first opening, and forming a second opening by removing a part of the first portion of the second passivation layer. The forming the second opening exposes the top metal layer.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: September 24, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fu-Chiang Kuo, Shih-Chi Kuo, Tsung-Hsien Lee, Ying-Hsun Chen
  • Publication number: 20190067215
    Abstract: A method of forming a trench structure is provided. The method includes depositing a silicon carbide (SiC) layer on a top metal layer, forming a first passivation layer on the SiC layer, removing a portion of the first passivation layer to form a first opening, forming a second passivation layer on the first passivation layer, the second passivation layer including a first portion in the first opening, and forming a second opening by removing a part of the first portion of the second passivation layer. The forming the second opening exposes the top metal layer.
    Type: Application
    Filed: October 29, 2018
    Publication date: February 28, 2019
    Inventors: Fu-Chiang KUO, Shih-Chi KUO, Tsung-Hsien LEE, Ying-Hsun CHEN
  • Patent number: 10115679
    Abstract: A trench structure includes a top metal layer, a silicon carbide (SiC) layer on the top metal layer, a first passivation layer overlying the SiC layer, and a second passivation layer overlying the first passivation layer. The trench structure also includes a first sidewall and a second sidewall that, together with the top metal layer, form a trench. At least one of the first sidewall or the second sidewall includes a sidewall of the second passivation layer and a sidewall of the SiC layer.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: October 30, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fu-Chiang Kuo, Shih-Chi Kuo, Tsung-Hsien Lee, Ying-Hsun Chen
  • Patent number: 9659874
    Abstract: A method of forming a deep trench in a semiconductor substrate includes: forming a first mask pattern over the semiconductor substrate, in which the first mask pattern has a first opening exposing a portion of the semiconductor substrate; forming a second mask pattern over the first mask pattern, in which the second mask pattern has a second opening substantially aligned with the first opening to expose the portion of the semiconductor substrate, and the second opening has a width greater than a width of the first opening to further expose a portion of the first mask pattern; and removing the portion of the semiconductor substrate, the portion of first mask pattern and another portion of the semiconductor substrate beneath the portion of the first mask pattern to form the deep trench.
    Type: Grant
    Filed: October 14, 2015
    Date of Patent: May 23, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Fu-Chiang Kuo, Ying-Hsun Chen, Shih-Chi Kuo, Tsung-Hsien Lee
  • Publication number: 20170110409
    Abstract: A method of forming a deep trench in a semiconductor substrate includes: forming a first mask pattern over the semiconductor substrate, in which the first mask pattern has a first opening exposing a portion of the semiconductor substrate; forming a second mask pattern over the first mask pattern, in which the second mask pattern has a second opening substantially aligned with the first opening to expose the portion of the semiconductor substrate, and the second opening has a width greater than a width of the first opening to further expose a portion of the first mask pattern; and removing the portion of the semiconductor substrate, the portion of first mask pattern and another portion of the semiconductor substrate beneath the portion of the first mask pattern to form the deep trench.
    Type: Application
    Filed: October 14, 2015
    Publication date: April 20, 2017
    Inventors: Fu-Chiang KUO, Ying-Hsun CHEN, Shih-Chi KUO, Tsung-Hsien LEE