Abstract: Semiconductor devices and methods which utilize a treatment process of a bottom anti-reflective layer are provided. The treatment process may be a physical treatment process in which material is added in order to fill holes and pores within the material of the bottom anti-reflective layer or else the treatment process may be a chemical treatment process in which a chemical reaction is used to form a protective layer. By treating the bottom anti-reflective layer the diffusion of subsequently applied chemicals is reduced or eliminated, thereby helping to prevent defects that arise from such diffusion.

Abstract: Semiconductor packages and methods of fabricating semiconductor packages include an interposer, at least one semiconductor integrated circuit (IC) die mounted on a first surface of the interposer, a package substrate bonded to a second surface of the interposer, and a molding portion contacting the second surface of the interposer and laterally surrounding the package substrate. The package substrate may be laterally-confined with respect to the interposer such that at least one horizontal dimension of the package substrate may be less than the corresponding horizontal dimension of the interposer. In various embodiments, reliability of the bonding connections between the interposer and the package substrate may be improved thereby providing increased yields and improved package performance.

Abstract: A light adjustment device includes a first substrate and a second substrate that are arranged opposite to each other, a light adjustment module, and an ultraviolet light blocking layer. The light adjustment module is located between the first substrate and the second substrate. The ultraviolet light blocking layer is located between the first substrate and the light adjustment module or located inside the light adjustment module. A refractive index of the ultraviolet light blocking layer is greater than a refractive index of the first substrate.

Abstract: The present disclosure provides a dimming glass and a method for manufacturing the dimming glass. The dimming glass includes: at least one dimming functional layer sandwiched between two glass substrates, where a plurality of conductive leads is connected to a bonding circuit board, and a sealant filled between sealant regions of the two glass substrates. Each conductive lead includes a connecting end, a protruding end and an extension segment. The connecting end is connected to the bonding circuit board, the protruding end extends out of an outer side of an edge of the glass substrate, at least a part of the extension segment extends in a first direction which is an extension direction of an edge of the bonding side of the dimming functional layer, and the extension segment is located in the sealant region and is secured through the sealant.

Abstract: A chassis device is provided and includes a case and an operating assembly. The case is for installing a detachable module and includes a first pivoting component pivotally connected to the detachable module, a second pivoting component pivotally connected to the first pivoting component, and a first engaging component movably disposed on the first pivoting component and for removably engaging with a second engaging component of the detachable module. The first pivoting component is restrained from pivoting when the first engaging component engages with the second engaging component of the detachable module, and when the second pivoting component pivots, the second pivoting component pushes the first engaging component, so that the first engaging component disengages from the second engaging component of the detachable module for allowing the first pivoting component to pivot. Furthermore, a related electronic apparatus and a related operating assembly are also provided.

Abstract: A titanium precursor is used to selectively form a titanium silicide (TiSix) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSixNy) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.

Abstract: A semiconductor structure includes a circuit substrate, at least one semiconductor package, at least one semiconductor device, and a ring structure. The at least one semiconductor package is disposed on the circuit substrate, and the semiconductor package includes a plurality of integrated circuit structures. The at least one semiconductor device, disposed on the circuit substrate and aside the semiconductor package. The ring structure is disposed on the circuit board. The ring structure includes at least one opening pattern corresponding to the semiconductor device.

Abstract: An emotion perceiving artificial intelligence mask includes a processing circuit, a sensing circuit and a display circuit. The processing circuit includes a display control module and an artificial intelligence calculation module. The sensing circuit receives an emotion perceiving message and transmits the emotion perceiving message to the artificial intelligence calculation module. The artificial intelligence calculation module calculates and analyzes the emotion perceiving message to generate a multidimensional emotion perceiving index factor and transmit the multidimensional emotion perceiving index factor to the display control module. The display control module generates a dynamic display picture message according to the multidimensional emotion perceiving index factor. The display circuit receives the dynamic display picture message transmitted by the display control module and relatively displays an emotion perceiving dynamic picture.

Abstract: A display module is provided, including a display panel and a flexible printed circuit (FPC) bonded to the display panel; the display panel includes a display area and a non-display area disposed at the periphery of the display area, the non-display area includes a bonding area disposed on one side of the display area, and a driver integrated circuit (IC) is disposed in the bonding area; the FPC includes a main body part, an orthographic projection of the main body part onto the display panel is in the bonding area, and a first accommodating groove for accommodating the driver IC is provided in a first surface of the FPC close to the display panel; a heat dissipation structure extending from within the first accommodating groove to outside the FPC is further disposed between the FPC and the bonding area. A display device is further provided.

Abstract: A circuit board assembly in a camera module for blocking unwanted light when images are captured includes a circuit board, a sensor, and an optical blocking body connecting the circuit board and the sensor. The circuit board includes a base board and a photomask. The photomask is arranged on a surface of the base board, the base board includes conductive circuit layers and dielectric layers, the conductive circuit layers and the dielectric layers are alternately arranged, the sensor being electronically connected to the conductive layers. The optical blocking body, the photomask, and the dielectric layers block ambient light entering the camera module other than through the lens assembly of the camera module.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a device layer, and a metallization structure. The substrate has a first surface. The device layer is over the first surface of the substrate. The device layer includes a plurality of passive component units. The metallization structure is over the device layer. The metallization structure includes a conductive bridge portion electrically connecting two adjacent passive component units.

Abstract: A light-adjusting glass is provided to include: a first toughened glass layer, a first adhesive layer, a first substrate, a second substrate, a second adhesive layer, a second toughened glass layer and supporting spacers between the first and second substrates, which are sequentially stacked; materials of the first and second adhesive layers are melted under the conditions that a temperature is in a range of 130° C. to 150° C. and a pressure is in a range of 12 bar to 14 bar, and are solidified after being cooled; the light-adjusting glass further includes an edge sealing structure around the first and second substrates, and the edge sealing structure, the first and second substrates are enclosed to form a gap filled with a liquid crystal; the edge sealing structure includes a liquid crystal pouring port therein; a sealing glue is at an opening of the liquid crystal pouring port and seals the opening.

Abstract: A method of forming a semiconductor structure includes forming a conductive capping layer over a conductive feature, forming a dielectric layer over the conductive capping layer, forming an opening in the dielectric layer to expose a top surface of the conductive capping layer, forming an inhibitor film at the top surface of the conductive capping layer, depositing a barrier layer on sidewalls of the opening, removing the inhibitor film to expose the top surface of the conductive capping layer, depositing a supplementary liner on the barrier layer and the top surface of the conductive capping layer, and depositing a conductive material on the supplementary liner and filling the opening.

Abstract: A multi-disulfide-bond long-chain peptide with neuroprotective activity can reduce cellular calcium influx by inhibiting glutamate receptors to protect cortical neurons from excitotoxicity induced by glutamate. It can be an effective neuroprotective agent.

Abstract: A method for customizing an appearance of a merchandise which is suitable for being performed by a computing device in order to customize a customized choice result selected by a user includes a designed image and a merchandise information. The method includes receiving the designed image, receiving the merchandise information, overlappingly displaying the designed image on a virtual merchandise image corresponding to the merchandise information, receiving at least one edit operation for at least one designed element in the designed image, and editing for the designed element in the designed image according to the edit operation and then generating a customizing virtual image. Thereby, the method can be used for customizing an appearance of a merchandise and directly customize the designed image that has been arranged. In addition, a computing device and a non-transitory computer-readable recording medium for customizing the appearance of the merchandise are also provided.

Abstract: A method for wireless channel frequency hopping synchronization in a PLC-RF integrated network having a first node, a second node, at least one PLC media and a RF media includes one of following characteristics: the first node uses the PLC media to transmit first frequency hopping data, and the second node receives the first frequency hopping data and then uses the first frequency hopping data to transmit or receive a packet on the RF media; the first node uses the PLC media to transmit second frequency hopping data, and the second node receives the second frequency hopping data and then transmits the second frequency hopping data on the PLC media; and the first node uses the RF media to transmit third frequency hopping data, and the second node receives the third frequency hopping data and then transmits the third frequency hopping data on the PLC media.

Abstract: A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second work function layer in the second gate trench, causing the first work function layer in the first gate trench to contain metal dopants that are left from the second work function layer etched in the first gate trench. The method includes forming a first active gate structure and second active gate structure, which include the first work function layer and the metal dopants left from the second work function layer in the first gate trench, and the first work function layer and no metal dopants left behind from the second work function layer, respectively.

Abstract: A cord divider is positioned on both sides of the cord winder of the control box of a cordless window curtain. Each cord divider is equipped with protrusions and crosspieces. When the cords are pulled out from the cord divider, the cords do not tangle or knot. The cords are wound up on the driving gear set, and the driving cord device prevents the cords from overlapping and causing uneven heights on both sides of the curtain. The use of cylinders in the cord dividers prevents excessive friction of the cords during use. There is no need to change the current cooperation way between the cords and the cord winder.

Abstract: A method for manufacturing a semiconductor device includes forming one or more work function layers over a semiconductor structure. The method includes forming a hardmask layer over the one or more work function layers. The method includes forming an adhesion layer over the hardmask layer. The method includes removing a first portion of a patternable layer that is disposed over the hardmask layer. The adhesion layer comprises an organic acid that concurrently bonds metal atoms of the hardmask layer and phenol groups of the patternable layer, thereby preventing an etchant from penetrating into a second portion of the patternable layer that still remains over the hardmask layer.

Abstract: A method for forming a honeycomb curtain and includes a weaving process, a fixing process, a gluing process, a stacking process and a cutting process. The honeycomb curtain includes multiple netted tubes, and each netted tube includes an upper portion and a lower portion. The central portion of each of the upper and lower portions is woven to form a tight-woven structure. Two sides of each of the central portions are woven to form a sparse-woven structure to form the upper portion to be a breathable first semi-transparent strip and to form the lower portion to be a second semi-transparent strip. The outer corner of each of the upper and lower portions are woven to form another tight-woven structure. The central portions of each of the netted tubes are applied with glue on respective outer face thereof. The netted tubes are stacked and pressed to form a layered structure.