Abstract: An organic aluminum sol and a preparation method thereof related to chemical technology fields. Organic mixed acids are used to react with aluminum powder to prepare organic aluminum sol as a precursor for preparing alumina fiber. The aluminum powder, formic acid, and oxalic acid are used as raw materials, the oxalic acid and the formic acid are firstly mixed to be even according to a preset ratio to obtain a mixed acid solution, and the aluminum powder is then completely reacted with the mixed acid solution to obtain an aluminum carboxylate solution under a condensation reflux condition, and the aluminum carboxylate solution is finally filtered to obtain the aluminum carboxylate sol that is clear and transparent. A chemical formula of a composition of the organic aluminum sol is expressed as: Al(OH)x(HCOO)y(COO—COO)z, wherein 0<x<2, 0<y<2, and 0<z<1.

Abstract: A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second work function layer in the second gate trench, causing the first work function layer in the first gate trench to contain metal dopants that are left from the second work function layer etched in the first gate trench. The method includes forming a first active gate structure and second active gate structure, which include the first work function layer and the metal dopants left from the second work function layer in the first gate trench, and the first work function layer and no metal dopants left behind from the second work function layer, respectively.

Abstract: Semiconductor devices and methods which utilize a treatment process of a bottom anti-reflective layer are provided. The treatment process may be a physical treatment process in which material is added in order to fill holes and pores within the material of the bottom anti-reflective layer or else the treatment process may be a chemical treatment process in which a chemical reaction is used to form a protective layer. By treating the bottom anti-reflective layer the diffusion of subsequently applied chemicals is reduced or eliminated, thereby helping to prevent defects that arise from such diffusion.

Abstract: A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second work function layer in the second gate trench, causing the first work function layer in the first gate trench to contain metal dopants that are left from the second work function layer etched in the first gate trench. The method includes forming a first active gate structure and second active gate structure, which include the first work function layer and the metal dopants left from the second work function layer in the first gate trench, and the first work function layer and no metal dopants left behind from the second work function layer, respectively.

Abstract: A cord divider is positioned on both sides of the cord winder of the control box of a cordless window curtain. Each cord divider is equipped with protrusions and crosspieces. When the cords are pulled out from the cord divider, the cords do not tangle or knot. The cords are wound up on the driving gear set, and the driving cord device prevents the cords from overlapping and causing uneven heights on both sides of the curtain. The use of cylinders in the cord dividers prevents excessive friction of the cords during use. There is no need to change the current cooperation way between the cords and the cord winder.

Abstract: A method for manufacturing a semiconductor device includes forming one or more work function layers over a semiconductor structure. The method includes forming a hardmask layer over the one or more work function layers. The method includes forming an adhesion layer over the hardmask layer. The method includes removing a first portion of a patternable layer that is disposed over the hardmask layer. The adhesion layer comprises an organic acid that concurrently bonds metal atoms of the hardmask layer and phenol groups of the patternable layer, thereby preventing an etchant from penetrating into a second portion of the patternable layer that still remains over the hardmask layer.

Abstract: A method for forming a honeycomb curtain and includes a weaving process, a fixing process, a gluing process, a stacking process and a cutting process. The honeycomb curtain includes multiple netted tubes, and each netted tube includes an upper portion and a lower portion. The central portion of each of the upper and lower portions is woven to form a tight-woven structure. Two sides of each of the central portions are woven to form a sparse-woven structure to form the upper portion to be a breathable first semi-transparent strip and to form the lower portion to be a second semi-transparent strip. The outer corner of each of the upper and lower portions are woven to form another tight-woven structure. The central portions of each of the netted tubes are applied with glue on respective outer face thereof. The netted tubes are stacked and pressed to form a layered structure.

Abstract: An electric curtain includes an upper beam, two curtain ropes, a curtain body and a lower beam. The upper beam includes a rotating shaft, a pivotal member, two rope winders, a controller and a wireless control unit installed inside the controller. The wireless control unit has the technical feature of receiving and matching with a wireless transmission communication protocol originated from the external, thereby allowing the electric curtain to achieve the effect of establishing the most optimal electrical conduction and wireless communication transmission between the two based on the external wireless transmission communication protocol selected and matched.

Abstract: A method for selectively removing a tungsten-including layer includes: forming a tungsten-including layer which has a first portion and a second portion; performing a treatment on a surface region of the first portion of the tungsten-including layer so as to convert tungsten in the surface region into tungsten oxide; and partially removing the tungsten-including layer using an etchant which has a higher etching selectivity to tungsten than tungsten oxide such that the second portion of the tungsten-including layer is fully removed, and the first portion of the tungsten-including layer, having the tungsten oxide in the surface region, is at least partially retained.

Abstract: A method for manufacturing a semiconductor device includes forming one or more work function layers over a semiconductor structure. The method includes forming a hardmask layer over the one or more work function layers. The method includes forming an adhesion layer over the hardmask layer. The method includes removing a first portion of a patternable layer that is disposed over the hardmask layer. The adhesion layer comprises an organic acid that concurrently bonds metal atoms of the hardmask layer and phenol groups of the patternable layer, thereby preventing an etchant from penetrating into a second portion of the patternable layer that still remains over the hardmask layer.

Abstract: A control rope guide device for a window curtain assembly includes a bottom part and a top part. The top part is connected to the top of the bottom part. The control rope guide device is cooperated with the window curtain assembly to separate two control ropes apart from each other so as to smoothly expand or lift the curtain.

Abstract: Disclosed is a method of forming gate structures for n-type and p-type transistors. The method includes: forming an interfacial layer and high-K (HK) dielectric layer for the gate structures; forming an n-type metal layer over the HK dielectric layer; forming a hard capping layer over the n-type metal layer while simultaneously strengthening the HK dielectric layer by fluorine passivation; patterning photo resist (PR) material over the hard capping layer that exposes a portion of the hard capping layer over the p-type transistor; removing the n-type metal layer and the hard capping layer over the p-type transistor via wet etching operations using high selectivity chemicals that are highly selective to the hard capping layer and the n-type metal layer; removing the patterned PR material while insulating, by the hard capping layer, gate structures from aluminum oxidation; and forming a p-type metal layer over the hard capping layer and the p-type transistor.

Abstract: Semiconductor device structures having metal gate structures with tunable work function values are provided. In one example, a first gate structure and a second gate structure formed on a substrate, wherein the first gate structure includes a first work function metal having a first material, and the second gate structure includes a second work function metal having a second material, the first material being different from the second material, wherein the first gate structure further includes a gate dielectric layer, a self-protective layer having metal phosphate, and the first work function metal on the self-protective layer.

Abstract: Methods for, and structures formed by, wet process assisted approaches implemented in a replacement gate process are provided. Generally, in some examples, a wet etch process for removing a capping layer can form a first monolayer on the underlying layer as an adhesion layer and a second monolayer on, e.g., an interfacial dielectric layer between a gate spacer and a fin as an etch protection mechanism. Generally, in some examples, a wet process can form a monolayer on a metal layer, like a barrier layer of a work function tuning layer, as a hardmask for patterning of the metal layer.

Abstract: A safety lift cord assembly for a window blind includes two ladder strings and multiple transverse strings located between the two ladder strings. The two ladder strings are parallel to each other, and the transverse strings control angular status of slats of the window blind. Two sleeves are located on two ends of the ladder unit. Two lift cords respectively extend through the two sleeves. The first end of each lift cord is fixed to a bottom rail, and the second end of each lift cord is connected to a roller in a top rail of the window blind. Two ropes respectively extend through the two sleeves. Multiple retainers are formed between the ladder strings and the ropes. When the lift cords are lifted, the ropes drive the ladder unit, and the sleeves are collected and is not dragged by the retainers to avoid from being torn or damaged.

Abstract: A semiconductor device includes a fin structure disposed over a substrate. The semiconductor device includes a gate dielectric layer disposed over the fin structure. The semiconductor device includes an interfacial layer over a top portion of the gate dielectric layer. A bottom portion of gate dielectric layer is free of contact with the interfacial layer. The semiconductor device includes a gate structure straddling the fin structure.

Abstract: A method for making a semiconductor structure includes forming a first fin and a second fin over a substrate. The method includes forming one or more work function layers over the first and second fins. The method includes forming a nitride-based metal film over the one or more work function layers. The method includes covering the first fin with a patternable layer. The method includes removing a second portion of the nitride-based metal film from the second fin, while leaving a first portion of the nitride-based metal film over the first fin substantially intact.

Abstract: A scrolling system for a window curtain includes a transmission device connected between a shaft to which the curtain is wrapped, and a fixed frame fixed. The transmission device includes a housing in which a first transmission unit and a second transmission unit are accommodated. The first transmission unit includes a first bevel gear which is engaged with a second bevel gear of the second transmission unit. The shaft is connected to the second transmission unit. The first transmission unit includes a loop which is located beyond the housing. A driving rod is hooked to the loop and drives the first bevel gear which drives the second bevel gear so that the second transmission unit is rotated, such that the shaft is rotated to operate the curtain up and down.

Abstract: Semiconductor devices and methods which utilize a treatment process of a bottom anti-reflective layer are provided. The treatment process may be a physical treatment process in which material is added in order to fill holes and pores within the material of the bottom anti-reflective layer or else the treatment process may be a chemical treatment process in which a chemical reaction is used to form a protective layer. By treating the bottom anti-reflective layer the diffusion of subsequently applied chemicals is reduced or eliminated, thereby helping to prevent defects that arise from such diffusion.

Abstract: Provided herein is a potassium-binding polymer prepared by polymerization reaction of a monomer and a crosslinking agent, wherein the monomer is the compound of formula (V), the crosslinking agent is the compound of formula (VI), and/or the compound of formula (VII), wherein the variables are as defined in the specification; to the use thereof for treating or preventing hyperkalemia.