Abstract: A semiconductor device includes a fin structure disposed over a substrate. The semiconductor device includes a first interfacial layer straddling the fin structure. The semiconductor device includes a gate dielectric layer extending along sidewalls of the fin structure. The semiconductor device includes a second interfacial layer overlaying a top surface of the fin structure. The semiconductor device includes a gate structure straddling the fin structure. The first interfacial layer and the gate dielectric layer are disposed between the sidewalls of the fin structure and the gate structure.

Abstract: A method for controlling curtain position of a curtain assembly includes a motor and a control unit. The motor includes a detection unit for detecting the working current of the motor. When the curtain moves upward and stops, the detection unit detects the working current increases. The detection unit sends a signal to a processor of the control unit to judge that the curtain reaches the upper-most position. Then the control unit stops the motor and demands the motor to operate reversely a range to lower the curtain slightly. The curtain that is lowered by operating the motor reversely is defined as at a limited position. When the curtain is lowered by the motor, the lower-most position of the curtain is defined by a pre-set number of revolutions of the motor. The pre-set number of revolutions of the motor is set by the control unit.

Abstract: Semiconductor devices and methods which utilize a treatment process of a bottom anti-reflective layer are provided. The treatment process may be a physical treatment process in which material is added in order to fill holes and pores within the material of the bottom anti-reflective layer or else the treatment process may be a chemical treatment process in which a chemical reaction is used to form a protective layer. By treating the bottom anti-reflective layer the diffusion of subsequently applied chemicals is reduced or eliminated, thereby helping to prevent defects that arise from such diffusion.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a fin structure over a substrate. The method also includes forming a gate structure over the fin structure. The method further includes forming fin spacers over sidewalls of the fin structure and gate spacers over sidewalls of the gate structure. In addition, the method includes forming a source/drain structure over the fin structure and depositing a dummy material layer to cover the source/drain structure. The dummy material layer is removed faster than the gate spacers during the removal of the dummy material layer. The method further includes forming a salicide layer over the source/drain structure and the fin spacers, and forming a contact over the salicide layer. The dummy material layer includes Ge, amorphous silicon or spin-on carbon.

Abstract: A method for stopping motor operation of an electric window curtain which includes a motor, a scrolling unit being driven by the motor, and a controlling member that controls operation of the motor to activate the scrolling unit to operate ropes to move a curtain. The method includes a detector connected to the motor to detect a load current of the motor. When the curtain moves downward and is interfered to stop, the load current for the motor reduces to close to a non-load current, the detector detects the non-load current of the motor, and the controlling member demands the motor to stop to prevent the ropes from being tied.

Abstract: A semiconductor device includes a fin structure disposed over a substrate. The semiconductor device includes a first interfacial layer straddling the fin structure. The semiconductor device includes a gate dielectric layer extending along sidewalls of the fin structure. The semiconductor device includes a second interfacial layer overlaying a top surface of the fin structure. The semiconductor device includes a gate structure straddling the fin structure. The first interfacial layer and the gate dielectric layer are disposed between the sidewalls of the fin structure and the gate structure.

Abstract: A scrolling unit for electric blinds includes a top box. An electric motor and a scrolling unit are located in the top box. The electric motor includes a shaft, a plate extends axially from the shaft. The scrolling unit includes a rotary part, and the plate is inserted into a slit defined axially in the rotary part. Two ropes are spirally wrapped to the rotary part. Multiple frames are located in the top box and separate the ropes apart. The diameter of the shaft of the electric motor is different from the diameter of the rotary part. The ropes are spirally wrapped to the rotary part and do not tangle with each other.

Abstract: A scrolling system for a window curtain includes a transmission device connected between a shaft to which the curtain is wrapped, and a fixed frame fixed. The transmission device includes a housing in which a first transmission unit and a second transmission unit are accommodated. The first transmission unit includes a first bevel gear which is engaged with a second bevel gear of the second transmission unit. The shaft is connected to the second transmission unit. The first transmission unit includes a loop which is located beyond the housing. A driving rod is hooked to the loop and drives the first bevel gear which drives the second bevel gear so that the second transmission unit is rotated, such that the shaft is rotated to operate the curtain up and down.

Abstract: Semiconductor devices and methods which utilize a treatment process of a bottom anti-reflective layer are provided. The treatment process may be a physical treatment process in which material is added in order to fill holes and pores within the material of the bottom anti-reflective layer or else the treatment process may be a chemical treatment process in which a chemical reaction is used to form a protective layer. By treating the bottom anti-reflective layer the diffusion of subsequently applied chemicals is reduced or eliminated, thereby helping to prevent defects that arise from such diffusion.

Abstract: A window curtain includes a rotary tube located in the top rail, and a curtain is connected between the top rail and the bottom rail. A scrolling device is located in the tube and includes a torsion spring mounted to a fixed shaft. A sleeve is connected to the fixed shaft. An adjustment unit is connected to the fixed shaft. The torsion spring is located between the sleeve and the adjustment unit. The adjustment unit includes a housing, a tubular part and a resilient member. The first end of the torsion spring is fixed to the tubular part. The torsion spring is compressed or released by rotating the adjustment unit. The tubular part includes ratchets which are engaged with a pawl in the housing to maintain the tubular part and the torsion spring from rotating reversely.

Abstract: Methods for, and structures formed by, wet process assisted approaches implemented in a replacement gate process are provided. Generally, in some examples, a wet etch process for removing a capping layer can form a first monolayer on the underlying layer as an adhesion layer and a second monolayer on, e.g., an interfacial dielectric layer between a gate spacer and a fin as an etch protection mechanism. Generally, in some examples, a wet process can form a monolayer on a metal layer, like a barrier layer of a work function tuning layer, as a hardmask for patterning of the metal layer.

Abstract: An ultrasonic ranging device includes an ultrasonic transmitter, an ultrasonic transmitting/receiving circuit, and a controller. The ultrasonic transmitter includes transmitting channels arranged in a ring. Each of the transmitting channels transmits a first ultrasonic wave. The first ultrasonic wave is reflected by a target object, the reflection of the first ultrasonic wave is defined as a second ultrasonic wave. Each of the transmitting channels receives the second ultrasonic wave. The ultrasonic transmitting/receiving channel controls the ultrasonic transmitter to transmit the first ultrasonic wave or receive the second ultrasonic wave by switching between working modes. The controller obtains a distance to the target object according to a transmitting time of the first ultrasonic wave and a receiving time of the second ultrasonic wave.

Abstract: A semiconductor device includes a fin structure disposed over a substrate. The semiconductor device includes a first interfacial layer straddling the fin structure. The semiconductor device includes a gate dielectric layer extending along sidewalls of the fin structure. The semiconductor device includes a second interfacial layer overlaying a top surface of the fin structure. The semiconductor device includes a gate structure straddling the fin structure. The first interfacial layer and the gate dielectric layer are disposed between the sidewalls of the fin structure and the gate structure.

Abstract: A motorized window blind includes a top rail, a bottom rail, a plurality of slats assembled between the top rail and the bottom rail, and a driving device received in the bottom rail. The driving device includes a transmission unit, a motor, a first cord and a second cord. A first end of each of the first and second cords is connected to the transmission unit, and a second end of each of the first and second cords extends through the slats and is connected to the top rail. The motor is connected to and drives the transmission unit to lift and lower the slats. The driving device received in the bottom rail is easily maintained. The top rail does not occupy too much space and is easily to be installed.

Abstract: A window curtain includes a top rail, a bottom rail and a curtain between the top and bottom rails. A transmission unit and a scrolling unit are received in the bottom rail. Transmission unit includes a control member, a motor, and a shaft connected to the motor. The scrolling unit includes a case in which a passive part, a first prat and a second part are accommodated. The shaft of the motor drives the scrolling unit. A first rope is connected to the first part. A second rope is connected to the second part. The first and second ropes pass through the curtain and are connected to the top rail via the first and second transition members. The transmission unit and the scrolling unit are received in the bottom rail to reduce the weight of the top rail, and are easily maintained.

Abstract: A motorized window blind includes a top rail, a bottom rail, a plurality of slats assembled between the top rail and the bottom rail, and a control device received in the bottom rail so as to control movement of the slats. The control device includes a transmission unit, a motor, a first cord, a second cord and a power supply. The power supply provides electric power to the motor which is connected to the transmission unit. The first and second cords are respectively connected to the transmission unit, and extend through the slats, and are connected to the top rail. The transmission unit is driven by the motor to lift and lower the slats. The control device includes a detection unit and an angle detection member. The slats are lowered when the detection unit detects the power supply is low. The angle detection member angularly controls the salts status.

Abstract: Methods for, and structures formed by, wet process assisted approaches implemented in a replacement gate process are provided. Generally, in some examples, a wet etch process for removing a capping layer can form a first monolayer on the underlying layer as an adhesion layer and a second monolayer on, e.g., an interfacial dielectric layer between a gate spacer and a fin as an etch protection mechanism. Generally, in some examples, a wet process can form a monolayer on a metal layer, like a barrier layer of a work function tuning layer, as a hardmask for patterning of the metal layer.

Abstract: A securing device includes an attachment plate and a holder. The attachment plate includes a first face attached to a wall or ceiling, and at least one bolt protrudes from the second face of the attachment plate. The holder includes a first part and a second part, wherein the first part is connected to the at least one bolt which is connected with a nut. The second part includes a first arm and a second arm. The first and second arms hold the curtain top rail. The wall of ceiling is not damaged while curtain top rail is held by the holder.

Abstract: Provided is a metal gate structure and related methods that include performing a metal gate cut process. The metal gate cut process includes a plurality of etching steps. For example, a first anisotropic dry etch is performed, a second isotropic dry etch is performed, and a third wet etch is performed. In some embodiments, the second isotropic etch removes a residual portion of a metal gate layer including a metal containing layer. In some embodiments, the third etch removes a residual portion of a dielectric layer.

Abstract: Embodiments of the present disclosure provide a method of cleaning a lanthanum containing substrate without formation of undesired lanthanum compounds during processing. In one embodiment, the cleaning method includes treating the lanthanum containing substrate with an acidic solution prior to cleaning the lanthanum containing substrate with a HF solution. The cleaning method permits using lanthanum doped high-k dielectric layer to modulate effective work function of the gate stack, thus, improving device performance.