Patents by Inventor Ying LONG

Ying LONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9290847
    Abstract: The present invention provides an Al2O3 coated Si3N4 cutting tool comprising a Si3N4 based substrate body and a coating layer on the substrate body, wherein the coating layer has at least one Al2O3 coating layer consisting of amorphous Al2O3 or nanocrystalline ?-, ?-, or ?-Al2O3. The hard and wear resistant refractory coating is deposited onto the Si3N4-based substrate body by reactive sputtering using bipolar pulsed DMS technique or dual magnetron sputtering method at substrate temperatures of 300-700° C. During the deposition, preferably, the substrate temperature is controlled to achieve the desired crystal structure of the coating. To form amorphous Al2O3 coating on the surface of the substrates, the deposition temperature can be controlled from 300 to 500° C.; on the other hand, to form nanocrystalline ?-, ?-, or ?-Al2O3, the deposition temperature can be controlled in the range of 500-700° C.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: March 22, 2016
    Assignee: GUANGDONG UNIVERSITY OF TECHNOLOGY
    Inventors: Shanghua Wu, Ying Long, Qimin Wang, Chengyong Wang
  • Publication number: 20140178659
    Abstract: The present invention provides an Al2O3 coated Si3N4 cutting tool comprising a Si3N4 based substrate body and a coating layer on the substrate body, wherein the coating layer has at least one Al2O3 coating layer consisting of amorphous Al2O3 or nanocrystalline ?-, ?-, or ?-Al2O3. The hard and wear resistant refractory coating is deposited onto the Si3N4-based substrate body by reactive sputtering using bipolar pulsed DMS technique or dual magnetron sputtering method at substrate temperatures of 300-700° C. During the deposition, preferably, the substrate temperature is controlled to achieve the desired crystal structure of the coating. To form amorphous Al2O3 coating on the surface of the substrates, the deposition temperature can be controlled from 300 to 500° C.; on the other hand, to form nanocrystalline ?-, ?-, or ?-Al2O3, the deposition temperature can be controlled in the range of 500-700° C.
    Type: Application
    Filed: December 23, 2013
    Publication date: June 26, 2014
    Inventors: Shanghua WU, Ying LONG, Qimin WANG, Chengyong WANG
  • Patent number: 7978829
    Abstract: A voice file retrieval method comprising the steps of: inputting a word; determining if voicing of the word is needed or not; obtaining a storage home address of a voice file corresponding to the word from a voice field of the word if the voice of the word is needed; and retrieving the voice file from the storage home address. By providing a voice field of the word, the storage home address of the voice file can be directly obtained. Hence, the retrieval speed can be increased, and the time to wait for an articulation of the word can be shortened.
    Type: Grant
    Filed: December 13, 2006
    Date of Patent: July 12, 2011
    Assignee: Inventec Appliances Corp.
    Inventor: Ying-Long Mao
  • Publication number: 20070280440
    Abstract: A voice file retrieval method comprising the steps of: inputting a word; determining if voicing of the word is needed or not; obtaining a storage home address of a voice file corresponding to the word from a voice field of the word if the voice of the word is needed; and retrieving the voice file from the storage home address. By providing a voice field of the word, the storage home address of the voice file can be directly obtained. Hence, the retrieval speed can be increased, and the time to wait for an articulation of the word can be shortened.
    Type: Application
    Filed: December 13, 2006
    Publication date: December 6, 2007
    Inventor: Ying-Long Mao
  • Patent number: 6602560
    Abstract: A method of removing residual fluorine present in a HDP-CVD chamber which includes a high pressure seasoning process, a dry-cleaning process, and a low-pressure deposition process.
    Type: Grant
    Filed: July 16, 2002
    Date of Patent: August 5, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Yi-Lung Cheng, Wen-Kung Cheng, Ming-Hwa Yoo, Szu-An Wu, Ying-Long Wang, Pei-Fen Chou