Abstract: A method used in forming memory circuitry comprises forming transistors individually comprising one source/drain region and another source/drain region. A channel region is between the one and the another source/drain regions. A conductive gate is operatively proximate the channel region. Digitline structures are formed that are individually directly electrically coupled to the another source/drain regions of multiple of the transistors. The digitline structures individually comprise a conductive digitline and an insulator material thereatop. The insulator material has a top. First insulating material is formed directly above the tops of the insulator material and laterally-over longitudinal sides of the digitline structures and covers across the one source/drain regions laterally-between immediately-adjacent of the digitline structures. Second insulating material is formed over the first insulating material.

Abstract: Methods, apparatuses, and systems related to a semiconductor nitridation passivation are described. An example method includes performing a dry etch process on a semiconductor structure on a wafer in a semiconductor fabrication process. The method further includes performing a dry strip process on the semiconductor structure. The method further includes performing a first wet strip clean process on the semiconductor. The method further includes performing a second wet strip clean process on the semiconductor. The method further includes performing a nitridation passivation on the semiconductor structure to avoid oxidization of the semiconductor structure. The method further performing a spacer material deposition on the semiconductor structure.

Abstract: Disclosed are a method, apparatus and system for instant message routing. The method includes: receiving a communication request from a source client to a destination client; acquiring the context associated with the source client and the destination client; and selecting a sub-user of the destination client for communication using a policy according to the context. When a source client requests communication with a virtual user, the method can route the communication request using a policy according to the context, to a sub-user of the virtual user which once communicated with the source client.

Abstract: Methods, apparatuses, and systems related to a semiconductor nitridation passivation are described. An example method includes performing a dry etch process on a semiconductor structure on a wafer in a semiconductor fabrication process. The method further includes performing a dry strip process on the semiconductor structure. The method further includes performing a first wet strip clean process on the semiconductor. The method further includes performing a second wet strip clean process on the semiconductor. The method further includes performing a nitridation passivation on the semiconductor structure to avoid oxidization of the semiconductor structure. The method further performing a spacer material deposition on the semiconductor structure.

Abstract: Systems, apparatuses, and methods related to atom implantation for reduction of compressive stress are described. An example method may include patterning a working surface of a semiconductor, the working surface having a hard mask material formed over a dielectric material and forming a material having a lower refractive index (RI), relative to a RI of the hard mask material, over the hard mask material. The method may further include implanting atoms through the lower RI material and into the hard mask material to reduce the compressive stress in the hard mask material.

Abstract: A method used in fabrication of integrated circuitry comprises forming metal material outwardly of a substrate. At least a majority (i.e., up to and including 100%) of the metal material contains ruthenium in at least one of elemental-form, metal compound-form, or alloy-form. A masking material is formed outwardly of the ruthenium-containing metal material. The masking material comprises at least one of nine specifically enumerated materials or category of materials. The masking material is used as a mask while etching through an exposed portion of the ruthenium-containing metal material to form a feature of integrated circuitry that comprises the ruthenium-containing metal material.

Abstract: Systems, apparatuses, and methods related to atom implantation for reduction of compressive stress are described. An example method may include patterning a working surface of a semiconductor, the working surface having a hard mask material formed over a dielectric material and forming a material having a lower refractive index (RI), relative to a RI of the hard mask material, over the hard mask material. The method may further include implanting atoms through the lower RI material and into the hard mask material to reduce the compressive stress in the hard mask material.

Abstract: A method used in fabrication of integrated circuitry comprises forming metal material outwardly of a substrate. At least a majority (i.e., up to and including 100%) of the metal material contains ruthenium in at least one of elemental-form, metal compound-form, or alloy-form. A masking material is formed outwardly of the ruthenium-containing metal material. The masking material comprises at least one of nine specifically enumerated materials or category of materials. The masking material is used as a mask while etching through an exposed portion of the ruthenium-containing metal material to form a feature of integrated circuitry that comprises the ruthenium-containing metal material.

Abstract: In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

Abstract: In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

Abstract: In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

Abstract: In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

Abstract: In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

Abstract: In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

Abstract: According to various embodiments, a method and apparatus for providing a virtual appliance are described. The method includes: obtaining metadata of a specific virtual appliance based on a received request for obtaining the specific virtual appliance, the metadata describing information about virtual machines involved in the specific virtual appliance, determining an association relationship between the specific virtual appliance and at least one other virtual appliance according to the metadata, and providing resource information for obtaining the specific virtual appliance according to the association relationship, the resource information including a plurality of resource addresses, at least one of the plurality of resource addresses pointing to a storage location of the at least one other virtual appliance.

Abstract: Disclosed are a method, apparatus and system for instant message routing. The method includes: receiving a communication request from a source client to a destination client; acquiring the context associated with the source client and the destination client; and selecting a sub-user of the destination client for communication using a policy according to the context. When a source client requests communication with a virtual user, the method can route the communication request using a policy according to the context, to a sub-user of the virtual user which once communicated with the source client.

Abstract: Disclosed are a method, apparatus and system for instant message routing. The method includes: receiving a communication request from a source client to a destination client; acquiring the context associated with the source client and the destination client; and selecting a sub-user of the destination client for communication using a policy according to the context. When a source client requests communication with a virtual user, the method can route the communication request using a policy according to the context, to a sub-user of the virtual user which once communicated with the source client.

Abstract: According to various embodiments, a method and apparatus for providing a virtual appliance are described. The method includes: obtaining metadata of a specific virtual appliance based on a received request for obtaining the specific virtual appliance, the metadata describing information about virtual machines involved in the specific virtual appliance, determining an association relationship between the specific virtual appliance and at least one other virtual appliance according to the metadata, and providing resource information for obtaining the specific virtual appliance according to the association relationship, the resource information including a plurality of resource addresses, at least one of the plurality of resource addresses pointing to a storage location of the at least one other virtual appliance.

Abstract: Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.

Abstract: In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.