Abstract: Polymer is removed from the backside of a wafer held on a support pedestal in a reactor using an arcuate side gas injection nozzle extending through the reactor side wall with a curvature matched to the wafer edge and supplied with plasma by-products from a remote plasma source.

Abstract: The invention relates to a system and a method for error reporting in software applications. A system in accordance with an embodiment includes: a dummy document generating unit for generating a dummy document from an original document, wherein the dummy document maintains a skeleton of the original document and contains dummy data as its content; and a dummy document reporting unit for sending the generated dummy document in an error report.

Abstract: Disclosed are a method, apparatus and system for instant message routing. The method includes: receiving a communication request from a source client to a destination client; acquiring the context associated with the source client and the destination client; and selecting a sub-user of the destination client for communication using a policy according to the context. When a source client requests communication with a virtual user, the method can route the communication request using a policy according to the context, to a sub-user of the virtual user which once communicated with the source client.

Abstract: A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet through the sidewall of the chamber, and backside polymer is removed by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer backside. For front side photoresist removal, the wafer is positioned away from the ceiling and below the side outlet of the localized plasma source, and front side photoresist is remove by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer front side.

Abstract: A method and apparatus for confining a plasma are provided herein. In one embodiment, an apparatus for confining a plasma includes a substrate support and a magnetic field forming device for forming a magnetic field proximate a boundary between a first region disposed at least above the substrate support, where a plasma is to be formed, and a second region, where the plasma is to be selectively restricted. The magnetic field has b-field components perpendicular to a direction of desired plasma confinement that selectively restrict movement of charged species of the plasma from the first region to the second region dependent upon the process conditions used to form the plasma.

Abstract: A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution.

Abstract: Systems and methods for facilitating a user's navigation through the contents in a viewer window are disclosed. In one embodiment a method is provided comprising receiving a user request to perform a navigation of displayed contents in a viewer window; determining if the navigation is associated with a content jump following a receipt of the user request. The described method further comprises generating an index mark in response to a determination that the navigation is associated with a content jump; and storing the index mark within an index mark queue to facilitate user navigation utilizing the contents thereof.

Abstract: A method for removing residues from a substrate. The residue is removed by exposing the substrate to a hydrogen-based plasma. After the substrate is exposed to the hydrogen-based plasma, the substrate may optionally be immersed in an aqueous solution including hydrogen fluoride.

Abstract: A method of etching an aluminum (Al) layer comprising forming an &agr;-carbon (i.e., inorganic amorphous carbon) mask, plasma etching the aluminum layer using the &agr;-carbon mask, and plasma stripping the &agr;-carbon mask. In one embodiment, the method is performed on a single processing platform as an integrated solution for etching aluminum.

Abstract: A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution.