Abstract: A chuck and a wafer supported thereon are rotated during a plasma process or a film deposition process to reduce thickness non-uniformity of a film processed or deposited on the wafer.

Abstract: The disclosure relates to a semiconductor device. An exemplary structure for a field effect transistor comprises a substrate comprising a major surface and a cavity below the major surface; a gate stack on the major surface of the substrate; a spacer adjoining one side of the gate stack; a shallow trench isolations (STI) region disposed on the side of the gate stack, wherein the STI region is within the substrate; and a source/drain (S/D) structure distributed between the gate stack and STI region, wherein the S/D structure comprises a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; and a S/D extension disposed between the substrate and strained material, wherein the S/D extension comprises a portion extending below the spacer and substantially vertical to the major surface.

Abstract: A remote radio head unit (RRU) system is disclosed. The present invention is based on the method of adaptive digital predistortion to linearize a power amplifier inside the RRU. The power amplifier characteristics such as variation of linearity and asymmetric distortion of the amplifier output signal are monitored by a wideband feedback path and controlled by the adaptation algorithm in a digital module. Therefore, embodiments of the present invention can compensate for the nonlinearities as well as memory effects of the power amplifier systems and also improve performance, in terms of power added efficiency, adjacent channel leakage ratio and peak-to-average power ratio. The present disclosure enables a power amplifier system to be field reconfigurable and support multi-modulation schemes (modulation agnostic), multi-carriers, multi-frequency bands and multi-channels.

Abstract: A RF-digital hybrid mode power amplifier system for achieving high efficiency and high linearity in wideband communication systems is disclosed. The present invention is based on the method of adaptive digital predistortion to linearize a power amplifier in the RF domain. The present disclosure enables a power amplifier system to be field reconfigurable and support multi-modulation schemes (modulation agnostic), multi-carriers and multi-channels. As a result, the digital hybrid mode power amplifier system is particularly suitable for wireless transmission systems, such as base-stations, repeaters, and indoor signal coverage systems, where baseband I-Q signal information is not readily available.

Abstract: A remote radio head unit (RRU) system is disclosed. The present invention is based on the method of adaptive digital predistortion to linearize a power amplifier inside the RRU. The power amplifier characteristics such as variation of linearity and asymmetric distortion of the amplifier output signal are monitored by a wideband feedback path and controlled by the adaptation algorithm in a digital module. Therefore, embodiments of the present invention can compensate for the nonlinearities as well as memory effects of the power amplifier systems and also improve performance, in terms of power added efficiency, adjacent channel leakage ratio and peak-to-average power ratio. The present disclosure enables a power amplifier system to be field reconfigurable and support multi-modulation schemes (modulation agnostic), multi-carriers, multi-frequency bands and multi-channels.

Abstract: This description relates to a plasma treatment apparatus including a vapor chamber, a gas supply and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having a plurality of holes in a bottom surface thereof and an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle. The plasma treatment apparatus further includes a controller configured to generate a control signal. The at least one controllable valve is configured to be adjusted based on the control signal. A control system and a method of controlling a controllable valve are also described.

Abstract: A wafer handling system with apparatus for transporting wafers between semiconductor fabrication tools. In one embodiment, the apparatus is a loadport bridge mechanism including an enclosure having first and second mounting ends, a docking port at each end configured and dimensioned to interface with a loadport of a semiconductor tool, and at least one wafer transport robot operable to transport a wafer between the docking ports. The wafer transport robot hands off or receives a wafer to/from a tool robot at the loadports of a first and second tool. The bridge mechanism allows one or more wafers to be transferred between loadports of different tools on an individual basis without reliance on the FAB's automated material handling system (AMHS) for bulk wafer transport inside a wafer carrier such as a FOUP or others.

Abstract: A web camera with position adjustment function has a clamping apparatus, an extending arm and a camera module. The clamping apparatus includes a base and a supporting bracket. The supporting bracket is connected pivotally to a rear edge of the base and has a chamber and an open front. The extending arm is disposed inside the chamber of the supporting bracket of the clamping apparatus and is pivotally and slidably connected to the supporting bracket of the clamping apparatus. The camera module is connected pivotally to a front end of the extending arm. The extending arm can be operated to protrude out of the open front of the supporting bracket and then to rotate relative to the clamping apparatus. Therefore, a horizontal position of the camera module is changeable and various camera angles can be achieved.

Abstract: A chuck and a wafer supported thereon are rotated during a plasma process or a film deposition process to reduce thickness non-uniformity of a film processed or deposited on the wafer.

Abstract: A remote radio head unit (RRU) system for achieving high efficiency and high linearity in wideband communication systems is disclosed. The present invention is based on the method of adaptive digital predistortion to linearize a power amplifier inside the RRU. The power amplifier characteristics such as variation of linearity and asymmetric distortion of the amplifier output signal are monitored by a wideband feedback path and controlled by the adaptation algorithm in a digital module. Therefore, embodiments of the present invention can compensate for the nonlinearities as well as memory effects of the power amplifier systems and also improve performance, in terms of power added efficiency, adjacent channel leakage ratio and peak-to-average power ratio. The present disclosure enables a power amplifier system to be field reconfigurable and support multi-modulation schemes (modulation agnostic), multi-carriers, multi-frequency bands and multi-channels.

Abstract: A system and method of controlling a semiconductor wafer fabrication process. The method includes positioning a semiconductor wafer on a wafer support assembly in a wafer processing module. A signal is transmitted from a signal emitter positioned at a predetermined transmission angle relative to an axis normal to the wafer support assembly to check leveling of the wafer in the module, so that the signal is reflected from the wafer. The embodiment includes monitoring for the reflected signal at a predetermined reflectance angle relative to the axis normal to the wafer support assembly at a signal receiver. A warning indication is generated if the reflected signal is not received at the signal receiver.

Abstract: In some embodiments, the present disclosure relates to a plasma etching system having direct and localized plasma sources in communication with a processing chamber. The direct plasma is operated to provide a direct plasma to the processing chamber for etching a semiconductor workpiece. The direct plasma has a high potential, formed by applying a large bias voltage to the workpiece. After etching is completed the bias voltage and direct plasma source are turned off. The localized plasma source is then operated to provide a low potential, localized plasma to a position within the processing chamber that is spatially separated from the workpiece. The spatial separation results in formation of a diffused plasma having a zero/low potential that is in contact with the workpiece. The zero/low potential of the diffused plasma allows for reactive ashing to be performed, while mitigating workpiece damage resulting from ion bombardment caused by positive plasma potentials.

Abstract: The present disclosure relates to a semiconductor body etching apparatus having a multi-zone end point detection system. In some embodiments, the multi-zone end point detection system has a processing chamber that houses a workpiece that is etched according to an etching process. A plurality of end point detector (EPD) probes are located within the processing chamber. Respective EPD probes are located within different zones in the processing chamber, thereby enabling the detection of end point signals from multiple zones within the processing chamber. The detected end point signals are provided from the plurality of EPD probes to an advanced process control (APC) unit. The APC unit is configured to make a tuning knob adjustment to etching process parameters based upon the detected end point signals and to thereby account for etching non-uniformities.

Abstract: An etching method comprises etching an oxide layer with a first dc bias of a plasma chamber, removing a photoresist layer with a second dc bias of the plasma chamber and etching through a liner film with a third dc bias of the plasma chamber. In order to reduce the copper deposition on the wall of the plasma chamber, the third dc bias is set to be less than the first and second dc bias.

Abstract: A remote radio head unit (RRU) system for achieving high efficiency and high linearity in wideband communication systems is disclosed. The present invention is based on the method of adaptive digital predistortion to linearize a power amplifier inside the RRU. The power amplifier characteristics such as variation of linearity and asymmetric distortion of the amplifier output signal are monitored by a wideband feedback path and controlled by the adaptation algorithm in a digital module. Therefore, embodiments of the present invention can compensate for the nonlinearities as well as memory effects of the power amplifier systems and also improve performance, in terms of power added efficiency, adjacent channel leakage ratio and peak-to-average power ratio. The present disclosure enables a power amplifier system to be field reconfigurable and support multi-modulation schemes (modulation agnostic), multi-carriers, multi-frequency bands and multi-channels.

Abstract: A web camera has a clamping apparatus, an extending arm and a camera module. The clamping apparatus includes a base and a supporting bracket. The supporting bracket is connected pivotally to a rear edge of the base and has a chamber and an open front. The extending arm is disposed inside the chamber of the supporting bracket of the clamping apparatus and is pivotally and slidably connected to the supporting bracket of the clamping apparatus. The camera module is connected pivotally to a front end of the extending arm. The extending arm can be operated to protrude out of the open front of the supporting bracket and then to rotate relative to the clamping apparatus. Therefore, a horizontal position of the camera module is changeable and various camera angles can be achieved.

Abstract: A method and apparatus for confining a plasma are provided herein. In one embodiment, an apparatus for confining a plasma includes a substrate support and a magnetic field forming device for forming a magnetic field proximate a boundary between a first region disposed at least above the substrate support, where a plasma is to be formed, and a second region, where the plasma is to be selectively restricted. The magnetic field has b-field components perpendicular to a direction of desired plasma confinement that selectively restrict movement of charged species of the plasma from the first region to the second region dependent upon the process conditions used to form the plasma.

Abstract: Methods for etching a dielectric barrier layer with high selectivity to a dielectric bulk insulating layer are provided. In one embodiment, the method includes providing a substrate having a portion of a dielectric barrier layer exposed through a dielectric bulk insulating layer in a reactor, flowing a gas mixture containing H2 gas, fluorine containing gas, at least an insert gas into the reactor, and etching the exposed portion of the dielectric barrier layer selectively to the dielectric bulk insulating layer.

Abstract: A RF-digital hybrid mode power amplifier system for achieving high efficiency and high linearity in wideband communication systems is disclosed. The present invention is based on the method of adaptive digital predistortion to linearize a power amplifier in the RF domain. The present disclosure enables a power amplifier system to be field reconfigurable and support multi-modulation schemes (modulation agnostic), multi-carriers and multi-channels. As a result, the digital hybrid mode power amplifier system is particularly suitable for wireless transmission systems, such as base-stations, repeaters, and indoor signal coverage systems, where baseband I-Q signal information is not readily available.

Abstract: A method includes measuring a depth of a shallow trench isolation (STI) region below a surface of a substrate. The STI region is filled with an oxide material. The substrate has a nitride layer above the surface. A thickness of the nitride layer is measured. A first chemical vapor etch (CVE) of the oxide material is performed, to partially form a recess in the STI region. The first CVE removes an amount of the oxide material less than the thickness of the nitride layer. The nitride layer is removed by dry etching. A remaining height of the STI region is measured after removing the nitride. A second CVE of the oxide material in the STI region is performed, based on the measured depth and the remaining height, to form at least one fin having a desired fin height above the oxide in the STI region without an oxide fence.