Abstract: The present disclosure relates to a method and apparatus for modeling a photovoltaic power curve, and a computer device and a storage medium thereof. The method includes: acquiring photovoltaic data at various time points within a specified time period; dividing the photovoltaic data at the various time points into at least two photovoltaic data packets; and establishing, according to the respective photovoltaic data of the at least two photovoltaic data packets, packet photovoltaic power curves respectively corresponding to the at least two photovoltaic data packets. By the method, the photovoltaic data is fitted in different time periods during the photovoltaic curve modeling process, thereby reducing the influence of the difference between photoelectric conversion efficiencies in different time periods on photovoltaic curve modeling, and improving the accuracy of photovoltaic curve modeling.

Abstract: Disclosed is a method for processing an irradiation forecast. The method includes: acquiring irradiation forecast data corresponding to a target time period; calling a stacked generalization model including a first-layer generalizer and a second-layer generalizer; determining, using the first-layer generalizer, intermediate forecast data based on the irradiation forecast data corresponding to the target time period; and determining, using the second-layer generalizer, an output forecast value corresponding to the target time period based on the intermediate forecast data. In a technical solution according to an embodiment of the present disclosure, a method for processing an irradiation forecast is achieved.

Abstract: A semiconductor device includes first and second metal-insulator-metal structures. The first metal-insulator-metal structure includes a first bottom conductor plate, a first portion of a first dielectric layer, a first middle conductor plate, a first portion of a second dielectric layer, and a first top conductor plate stacked up one over another. The second metal-insulator-metal structure includes a second bottom conductor plate, a second portion of the first dielectric layer, a second middle conductor plate, a second portion of the second dielectric layer, and a second top conductor plate stacked up one over another. In a cross-sectional view, the first bottom conductor plate is wider than the first middle conductor plate that is wider than the first top conductor plate, and the second bottom conductor plate is narrower than the second middle conductor plate that is narrower than the first top conductor plate.

Abstract: A semiconductor device includes a metal-insulator-metal (MIM) capacitor. The MIM capacitor includes: electrodes including one or more first electrodes and one or more second electrodes; and one or more insulating layers disposed between adjacent electrodes. The MIM capacitor is disposed in an interlayer dielectric (ILD) layer disposed over a substrate. The one or more first electrodes are connected to a side wall of a first via electrode disposed in the ILD layer, and the one or more second electrodes are connected to a side wall of a second via electrode disposed in the ILD layer. In one or more of the foregoing or following embodiments, the one or more insulating layers include a high-k dielectric material.

Abstract: A device structure, along with methods of forming such, are described. The device structure includes a structure, a first passivation layer disposed on the structure, a buffer layer disposed on the first passivation layer, a barrier layer disposed on a first portion of the buffer layer, a redistribution layer disposed over the barrier layer, an adhesion layer disposed on the barrier layer and on side surfaces of the redistribution layer, and a second passivation layer disposed on a second portion of the buffer layer. The second passivation layer is in contact with the barrier layer, the adhesion layer, and the redistribution layer.

Abstract: In a method of manufacturing a semiconductor device, an opening is formed in a first dielectric layer so that a part of a lower conductive layer is exposed at a bottom of the opening, one or more liner conductive layers are formed over the part of the lower conductive layer, an inner sidewall of the opening and an upper surface of the first dielectric layer, a main conductive layer is formed over the one or more liner conductive layers, a patterned conductive layer is formed by patterning the main conductive layer and the one or more liner conductive layers, and a cover conductive layer is formed over the patterned conductive layer. The main conductive layer which is patterned is wrapped around by the cover conductive layer and one of the one or more liner conductive layers.

Abstract: Disclosed are a method for controlling an Internet of Things (IoT) device, and a terminal device. The method is applied to a terminal device and includes: acquiring parameter information of a triggered key of a mouse; determining a target device and target operation information acting on the target device based on the parameter information; and sending device information of the target device and the target operation information to a server.

Abstract: A method for preparing a cover substrate is provided. The method includes the following steps: providing a substrate with an anti-reflection film formed thereon, wherein the anti-reflection film comprises a first layer with low refractive index; and treating the first layer of the anti-reflection film with fluoride-based plasma to form a hydrophobic layer on the first layer.

Abstract: A method for coating a curved substrate is disclosed, which includes: providing a coating device including: a chamber, a carrying platform, a sputtering mechanism, and a position-adjusting mechanism, wherein the carrying platform is disposed in the chamber and has a first surface, the sputtering mechanism is disposed in the chamber and is disposed corresponding to the carrying platform, and the position-adjusting mechanism is disposed in the chamber; providing a curved substrate, wherein the curved substrate is disposed on the first surface of the carrying platform and the curved substrate has a second surface; adjusting the sputtering mechanism to different positions by the position-adjusting mechanism; and sputtering a coating material to different parts of the second surface of the curved substrate by the sputtering mechanism at the different positions.

Abstract: A chemical mechanical polishing slurry, including silicon dioxide particles, a nitrogen-containing heterocyclic compound having one or more carboxy group(s), and an ethoxylated butoxylated alky alcohol, and use of the chemical mechanical polishing slurry in the polishing silicon oxide, polysilicon, and silicon nitride. Polishing rate for silicon nitride using the polishing slurry is much higher than that for silicon oxide and polysilicon. The polishing slurry can be applied to chemical mechanical polishing in which silicon oxide/polysilicon is used as the stop layer, and can be used to control the amount of oxide and polysilicon removed from the substrate surface during polishing.

Abstract: A pressure chamber has a chamber wall. The chamber wall includes a sensor integrated within the chamber wall, wherein the sensor integrated in the chamber wall comprises defects. A method of determining an effect of pressure on a material is further described. The method includes applying pressure to a material within a pressure chamber and to a pressure chamber wall of the pressure chamber, where the pressure chamber wall has defects. A signal from the defects is sensed while the material and the pressure chamber wall are under pressure. A property of the material is determined based on the sensed signal.

Abstract: The present invention discloses a chemical mechanical polishing slurry, the chemical mechanical polishing slurry comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizer, and at least one kind of polyacrylic acid anionic surfactant. The polishing slurry of the present invention can decrease the removal rate of tantalum while increasing the removal rate of copper, and reduce copper dishing and dielectric erosion after polish.

Abstract: The present invention pertains to: a p-boronophenylalanine derivative that comprises a polymer to which a group represented by formula (I) is linked directly or via a linker; a composition containing same; and a kit for producing said derivative and composition.

Abstract: A display device having a display region and a peripheral region surrounding the display region is provided. The display device includes a first adhesion layer sandwiched between a display unit and a protective structure. The protective structure includes a first protective layer having a first length in a first direction. The protective structure also includes a second adhesion layer disposed on the first protective layer. The protective structure further includes a second protective layer disposed on the second adhesion layer, and the second protective layer has a second length in the first direction, wherein the difference between the first length and the second length is between 0 and 1 mm, and wherein the second protective layer is on the outermost side of the display device.

Abstract: A display device having a display region and a peripheral region surrounding the display region is provided. The display device includes a first adhesion layer sandwiched between a display unit and a protective structure. The protective structure includes a first protective layer having a first length in a first direction. The protective structure also includes a second adhesion layer disposed on the first protective layer. The protective structure further includes a second protective layer disposed on the second adhesion layer, and the second protective layer has a second length in the first direction, wherein the difference between the first length and the second length is between 0 and 1 mm, and wherein the second protective layer is on the outermost side of the display device.

Abstract: A display device having a display region and a peripheral region surrounding the display region is provided. The display device includes a first adhesion layer sandwiched between a display unit and a protective structure. The protective structure includes a first protective layer having a first length in a first direction. The protective structure also includes a second adhesion layer disposed on the first protective layer. The protective structure further includes a second protective layer disposed on the second adhesion layer, and the second protective layer has a second length in the first direction, wherein the difference between the first length and the second length is between 0 and 1 mm, and wherein the second protective layer is on the outermost side of the display device.

Abstract: A chemical mechanical polishing slurry and an application thereof are described herein. The polishing slurry includes: (a) grinding particles, (b) aminosilane coupling agent, (c) azole compound, (d) complexing agent, (e) organic phosphoric acid, (f) oxidizing agent, and (g) water. The chemical mechanical polishing slurry can be used for polishing through-silicon vias (TSV) and IC blocking layers, and is capable of meeting the requirements with respect to polishing rates and selection ratio for various materials. The polishing slurry has a strong correcting ability for a surface of a silicon wafer device, can achieve rapid planarization, and prevent local and overall corrosion that occurs in the metal polishing process, thus improving work efficiency and reducing production cost.

Abstract: A circuit with co-matching topology for transmitting and receiving RF signals, said circuit comprising: a first sub-circuit comprising a first inductive component and a first capacitive component to form a low-pass filter for transmitting a first RF signal from a first amplifier to an antenna, wherein the first inductive component is coupled to a ground via a first switch; and a second sub-circuit comprising a second inductive component and a second capacitive component for receiving a second RF signal from the antenna to an input terminal of a second amplifier, wherein said input terminal of the second amplifier is coupled to the ground via a second switch; wherein when the first amplifier is transmitting the first RF signal, the first switch is turned off and the second switch is turned on, and wherein when the second amplifier is receiving the second RF signal, the first switch is turned on and the second switch is turned off.

Abstract: A display device having a display region and a peripheral region surrounding the display region is provided. The display device includes a first adhesion layer sandwiched between a display unit and a protective structure. The protective structure includes a first protective layer having a first length in a first direction. The protective structure also includes a second adhesion layer disposed on the first protective layer. The protective structure further includes a second protective layer disposed on the second adhesion layer, and the second protective layer has a second length in the first direction, wherein the difference between the first length and the second length is between 0 and 1 mm, and wherein the second protective layer is on the outermost side of the display device.