Abstract: A device housing is provided. The device housing includes a substrate, a silicon dioxide film formed on the substrate, and a zinc oxide film formed on the silicon dioxide film. The silicon dioxide film has micrometer sized structures. The zinc oxide film has nanometer sized structures. A method for making the device housing is also described there.

Abstract: A process for use in lithography, such as photolithography for patterning a semiconductor wafer, is disclosed. The process includes receiving an incoming semiconductor wafer having various features and layers formed thereon. A unit-induced overlay (uniiOVL) correction is received and a deformation measurement is performed on the incoming semiconductor wafer in an overlay module. A deformation-induced overlay (defiOVL) correction is generated from the deformation measurement results by employing a predetermined algorithm on the deformation measurement results. The defiOVL and uniiOVL corrections are fed-forward to an exposure module and an exposure process is performed on the incoming semiconductor wafer.

Abstract: A coated article includes a bonding layer, a chromium oxynitride layer a boron nitride layer formed on a substrate in that order. The boron nitride layer is made of hexagonal structure boron nitride.

Abstract: A coated article includes a magnesium layer, a magnesium oxynitride layer a titanium nitride layer formed on a substrate in that order. The substrate is made of magnesium alloy.

Abstract: One embodiment relates to a method for semiconductor workpiece processing. In this method, a baseline tool induced shift (TIS) is measured by performing a baseline number of TIS measurements on a first semiconductor workpiece. After the baseline TIS has been determined, the method determines a subsequent TIS based on a subsequent number of TIS measurements taken on a first subsequent semiconductor workpiece. The subsequent number of TIS measurements is less than the baseline number of TIS measurements.

Abstract: The present invention generally relates to reducing the mucoadhesive properties of a particle. In some embodiments, the particle is coated with and/or associated with a (poly(ethylene glycol))-(poly(propylene oxide))-(poly(ethylene glycol)) triblock copolymer. Methods for preparing inventive particles using a poly(ethylene glycol)-vitamin E conjugate as a surfactant are also provided. In some embodiments, methods are provided comprising administering to a subject a composition of particles of the present invention. Such particles with reduced mucoadhesive properties are useful in delivering agents to mucosal tissues such as oral, ophthalmic, gastrointestinal, nasal, respiratory, and genital mucosal tissues.

Abstract: A coated article includes a substrate, a first layer deposited on the substrate, a second layer deposited on the first layer and a third layer deposited on the second layer. The first layer substantially consists of one material selected from the group consisting of Al layer, Al alloy layer, Zn layer or Zn alloy layer. The first layer is white. The second layer substantially includes metal M?, O and N, wherein M? is Al or Zn. The third layer is an aluminum oxide layer or a silicon oxide layer. The third layer has an anti-fingerprint property.

Abstract: A coated article is provided. A coated article includes a substrate having a color layer and a ceramic layer formed thereon, and in that order. The color layer substantially comprises a material elected from the group consisting of aluminum, aluminum alloy, zinc, and zinc alloy. The ceramic layer substantially consists of substance M, elemental O, and elemental N, wherein M is elemental Al or elemental Zn.

Abstract: A process for surface treating iron-based alloy includes providing a substrate made of iron-based alloy. A chromium-oxygen-nitrogen layer is then formed on the substrate by sputtering. An iridium layer is formed on the chromium-oxygen-nitrogen layer by sputtering. A boron-nitrogen layer is next formed on the iridium layer by sputtering.

Abstract: A process for surface treating iron-based alloy includes providing a substrate made of iron-based alloy. A chromium layer is then formed on the substrate by vacuum sputtering. A silicon oxide layer, an alumina layer, and a boron nitride layer are formed in that order by vacuum evaporation.

Abstract: A process for surface treating iron-based alloy includes providing a substrate made of iron-based alloy. A stainless steel layer is then formed on the substrate by sputtering. A silicon-oxygen-nitrogen layer is formed on the stainless steel layer by sputtering. A boron-nitrogen layer is next formed on the silicon-oxygen-nitrogen layer by sputtering.

Abstract: A coated article includes a bonding layer, an iridium layer, a chromium oxynitride layer and a chromium nitride layer formed on a substrate in that order. The substrate is made of die steel.

Abstract: A coated article includes a magnesium layer, a magnesium oxynitride layer a titanium nitride layer formed on a substrate in that order. The substrate is made of magnesium alloy.

Abstract: A coated article includes a bonding layer, a chromium oxynitride layer a boron nitride layer formed on a substrate in that order. The boron nitride layer is made of hexagonal structure boron nitride.

Abstract: The present invention generally relates to reducing the mucoadhesive properties of a particle. In some embodiments, the particle is coated with and/or associated with a (poly(ethylene glycol))-(poly(propylene oxide))-(poly(ethylene glycol)) triblock copolymer. Methods for preparing inventive particles using a poly(ethylene glycol)-vitamin E conjugate as a surfactant are also provided. In some embodiments, methods are provided comprising administering to a subject a composition of particles of the present invention. Such particles with reduced mucoadhesive properties are useful in delivering agents to mucosal tissues such as oral, ophthalmic, gastrointestinal, nasal, respiratory, and genital mucosal tissues.

Abstract: A housing for an electronic device includes a metal substrate and a luminous layer formed on the metal substrate, the luminous layer mainly comprises ZnO mixed with In. The disclosure also described a method to make the housing.

Abstract: A device housing is provided. The device housing includes a substrate, a silicon dioxide film formed on the substrate, and a zinc oxide film formed on the silicon dioxide film. The silicon dioxide film has micrometer sized structures. The zinc oxide film has nanometer sized structures. A method for making the device housing is also described there.

Abstract: A new method of forming a bi-layer photoresist mask with a reduced critical dimension bias between isolated and dense lines and reduced edge roughness is described. A layer to be etched is provided on a semiconductor substrate wherein the surface of the layer has an uneven topography. The layer to be etched is coated with a first planarized photoresist layer which is baked. The first photoresist layer is coated with a second silicon-containing photoresist layer which is baked. Portions of the second photoresist layer not covered by a mask are exposed to actinic light. The exposed portions of the second photoresist layer are developed away. Then, portions of the first photoresist layer not covered by the second photoresist layer remaining are developed away in a dry development step wherein sufficient SO2 gas is included in the developing recipe to reduce microloading to form a bi-layer photoresist mask comprising the first and second photoresist layers remaining.

Abstract: A new method of forming a bi-layer photoresist mask with a reduced critical dimension bias between isolated and dense lines and reduced edge roughness is described. A layer to be etched is provided on a semiconductor substrate wherein the surface of the layer has an uneven topography. The layer to be etched is coated with a first planarized photoresist layer which is baked. The first photoresist layer is coated with a second silicon-containing photoresist layer which is baked. Portions of the second photoresist layer not covered by a mask are exposed to actinic light. The exposed portions of the second photoresist layer are developed away. Then, portions of the first photoresist layer not covered by the second photoresist layer remaining are developed away in a dry development step wherein sufficient SO2 gas is included in the developing recipe to reduce microloading to form a bi-layer photoresist mask comprising the first and second photoresist layers remaining.

Abstract: A new method of forming a bi-layer photoresist mask with a reduced critical dimension bias between isolated and dense lines and reduced edge roughness is described. A layer to be etched is provided on a semiconductor substrate wherein the surface of the layer has an uneven topography. The layer to be etched is coated with a first planarized photoresist layer which is baked. The first photoresist layer is coated with a second silicon-containing photoresist layer which is baked. Portions of the second photoresist layer not covered by a mask are exposed to actinic light. The exposed portions of the second photoresist layer are developed away. Then, portions of the first photoresist layer not covered by the second photoresist layer remaining are developed away in a dry development step wherein sufficient SO2 gas is included in the developing recipe to reduce microloading to form a bi-layer photoresist mask comprising the first and second photoresist layers remaining.