Abstract: Embodiments of the present disclosure are directed to techniques and configurations for an integrated circuit (IC) package having an underfill layer with filler particles arranged in a generally random distribution pattern. In some embodiments, a generally random distribution pattern of filler particles may be obtained by reducing an electrostatic charge on one or more components of the IC package assembly, by applying a surface treatment to filler to reduce filler electrical charge, by applying an electric force against the filler particles of the underfill material in a direction opposite to a direction of gravitational force, by using an underfill material with a relatively low maximum filler particle size, and/or by snap curing the underfill layer at a relatively low temperature. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure are directed to techniques and configurations for an integrated circuit (IC) package having an underfill layer with filler particles arranged in a generally random distribution pattern. In some embodiments, a generally random distribution pattern of filler particles may be obtained by reducing an electrostatic charge on one or more components of the IC package assembly, by applying a surface treatment to filler to reduce filler electrical charge, by applying an electric force against the filler particles of the underfill material in a direction opposite to a direction of gravitational force, by using an underfill material with a relatively low maximum filler particle size, and/or by snap curing the underfill layer at a relatively low temperature. Other embodiments may be described and/or claimed.

Abstract: Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods and structures may include modifying an underfill material with one of a thiol adhesion promoter, an azole coupling agent, surface modified filler, and peroxide based cross-linking polymer chemistries to greatly enhance adhesion in package structures utilizing the embodiments herein.

Abstract: An underfill composition comprises a curable resin, a plurality of filler particles loaded within the resin, the filler particles comprising at least 50 weight % of the underfill composition. The filler particles comprise first filler particles having a particle size of from 0.1 micrometers to 15 micrometers and second filler particles having a particle size of less than 100 nanometers. A viscosity of the underfill composition is less than a viscosity of a corresponding composition not including the second filler particles.

Abstract: Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods and structures may include modifying an underfill material with one of a thiol adhesion promoter, an azole coupling agent, surface modified filler, and peroxide based cross-linking polymer chemistries to greatly enhance adhesion in package structures utilizing the embodiments herein.

Abstract: An underfill composition comprises a curable resin, a plurality of filler particles loaded within the resin, the filler particles comprising at least 50 weight % of the underfill composition. The filler particles comprise first filler particles having a particle size of from 0.1 micrometers to 15 micrometers and second filler particles having a particle size of less than 100 nanometers. A viscosity of the underfill composition is less than a viscosity of a corresponding composition not including the second filler particles.

Abstract: Embodiments of the present description include methods for attaching a microelectronic device to a microelectronic substrate with interconnection structures after disposing of an underfill material on the microelectronic device, wherein filler particless within the underfill material may be repelled away from the interconnection structures prior to connecting the microelectronic device to the microelectronic structure. These methods may include inducing a charge on the interconnection structures and may include placing the interconnection structures between opposing plates and producing a bias between the opposing plates after depositing the underfill material on the interconnection structures.

Abstract: Embodiments of the present description include methods for attaching a microelectronic device to a microelectronic substrate with interconnection structures after disposing of an underfill material on the microelectronic device, wherein filler particless within the underfill material may be repelled away from the interconnection structures prior to connecting the microelectronic device to the microelectronic structure. These methods may include inducing a charge on the interconnection structures and may include placing the interconnection structures between opposing plates and producing a bias between the opposing plates after depositing the underfill material on the interconnection structures.

Abstract: An underfill composition comprises a curable resin, a plurality of filler particles loaded within the resin, the filler particles comprising at least 50 weight % of the underfill composition. The filler particles comprise first filler particles having a particle size of from 0.1 micrometers to 15 micrometers and second filler particles having a particle size of less than 100 nanometers. A viscosity of the underfill composition is less than a viscosity of a corresponding composition not including the second filler particles.

Abstract: Embodiments of the present description include methods for attaching a microelectronic device to a microelectronic substrate with interconnection structures after disposing of an underfill material on the microelectronic device, wherein filler particles within the underfill material may be repelled away from the interconnection structures prior to connecting the microelectronic device to the microelectronic structure. These methods may include inducing a charge on the interconnection structures and may include placing the interconnection structures between opposing plates and producing a bias between the opposing plates after depositing the underfill material on the interconnection structures.

Abstract: Embodiments of the present description include methods for attaching a microelectronic device to a microelectronic substrate with interconnection structures after disposing of an underfill material on the microelectronic device, wherein filler particles within the underfill material may be repelled away from the interconnection structures prior to connecting the microelectronic device to the microelectronic structure. These methods may include inducing a charge on the interconnection structures and may include placing the interconnection structures between opposing plates and producing a bias between the opposing plates after depositing the underfill material on the interconnection structures.

Abstract: Epoxy-amine underfill materials for semiconductor packages and semiconductor packages having an epoxy-amine underfill material are described. In an example, a semiconductor apparatus includes a semiconductor die having a surface with an integrated circuit thereon. A semiconductor package substrate has a surface with a plurality of contact pads thereon. A plurality of conductive contacts couples the surface of the semiconductor die to the surface of the semiconductor package substrate. An epoxy-amine underfill material is disposed between the surface of the semiconductor die and the surface of the semiconductor package substrate and surrounds the plurality of conductive contacts. The epoxy-amine underfill has high adhesion and is based on a low volatility multi-functional amine species.

Abstract: Epoxy-amine underfill materials for semiconductor packages and semiconductor packages having an epoxy-amine underfill material are described. In an example, a semiconductor apparatus includes a semiconductor die having a surface with an integrated circuit thereon. A semiconductor package substrate has a surface with a plurality of contact pads thereon. A plurality of conductive contacts couples the surface of the semiconductor die to the surface of the semiconductor package substrate. An epoxy-amine underfill material is disposed between the surface of the semiconductor die and the surface of the semiconductor package substrate and surrounds the plurality of conductive contacts. The epoxy-amine underfill has high adhesion and is based on a low volatility multi-functional amine species.

Abstract: Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods and structures may include modifying an underfill material with one of a thiol adhesion promoter, an azole coupling agent, surface modified filler, and peroxide based cross-linking polymer chemistries to greatly enhance adhesion in package structures utilizing the embodiments herein.

Abstract: Embodiments of the present disclosure are directed to techniques and configurations for an integrated circuit (IC) package having an underfill layer with filler particles arranged in a generally random distribution pattern. In some embodiments, a generally random distribution pattern of filler particles may be obtained by reducing an electrostatic charge on one or more components of the IC package assembly, by applying a surface treatment to filler to reduce filler electrical charge, by applying an electric force against the filler particles of the underfill material in a direction opposite to a direction of gravitational force, by using an underfill material with a relatively low maximum filler particle size, and/or by snap curing the underfill layer at a relatively low temperature. Other embodiments may be described and/or claimed.

Abstract: Some embodiments of the present invention include apparatuses and methods relating to integrated micro-channels for removing heat from 3D through silicon architectures.

Abstract: Some embodiments of the present invention include apparatuses and methods relating to integrated micro-channels for removing heat from 3D through silicon architectures.

Abstract: Some embodiments of the present invention include apparatuses and methods relating to integrated micro-channels for removing heat from 3D through silicon architectures.

Abstract: Some embodiments of the present invention include apparatuses and methods relating to integrated micro-channels for removing heat from 3D through silicon architectures.