Abstract: In an embodiment, a memory controller in an integrated circuit may generate refreshes for one or more DRAMs coupled to the integrated circuit according to a refresh rate. The integrated circuit may include one or more temperature sensors. A rate of change of the temperature may be determined from the temperature sensors. If the rate is greater than a threshold, the memory controller may generate refreshes according to a refresh rate specified by the DRAMs. If the rate is less than the threshold, the memory controller may generate refreshes at a reduced refresh rate.

Abstract: Microelectronic modules are described. In an embodiment, a microelectronic module includes a module substrate, a chip mounted onto the module substrate, and a semiconductor-based integrated passive device between the chip and the module substrate. The semiconductor-based integrated passive device may include an upper RDL stack-up with thicker wiring layers than a lower BEOL stack-up. The semiconductor-based integrated passive device may be further solder bonded or hybrid bonded with the chip.

Abstract: A temperature control apparatus is disclosed. An integrated circuit (IC) includes a plurality of temperature sensors, a first thermal control loop, and a second thermal control loop. The first thermal control loop is configured to control temperature of the IC by reducing a frequency of a clock signal provided to the IC in response to a temperature at one of the plurality of temperature sensors reaching a first temperature threshold. The second thermal control loop is configured to control temperature of the IC by dithering the clock signal provided to the IC in response to a temperature at one of the plurality of temperature sensors reaching a second temperature threshold that is greater than the first temperature threshold.

Abstract: In an embodiment, a memory controller in an integrated circuit may generate refreshes for one or more DRAMs coupled to the integrated circuit according to a refresh rate. The integrated circuit may include one or more temperature sensors. A rate of change of the temperature may be determined from the temperature sensors. If the rate is greater than a threshold, the memory controller may generate refreshes according to a refresh rate specified by the DRAMs. If the rate is less than the threshold, the memory controller may generate refreshes at a reduced refresh rate.

Abstract: A temperature control apparatus is disclosed. An integrated circuit (IC) includes a plurality of temperature sensors, a first thermal control loop, and a second thermal control loop. The first thermal control loop is configured to control temperature of the IC by reducing a frequency of a clock signal provided to the IC in response to a temperature at one of the plurality of temperature sensors reaching a first temperature threshold. The second thermal control loop is configured to control temperature of the IC by dithering the clock signal provided to the IC in response to a temperature at one of the plurality of temperature sensors reaching a second temperature threshold that is greater than the first temperature threshold.

Abstract: An inductor is disclosed, including a first wire, a non-conductive material, and a shell. The non-conductive material may cover the first wire, with a portion of each end of the first wire uncovered. The shell may include a top portion and a bottom portion and include at least one magnetized layer and at least one gap between the first portion and the second portion. The shell may also surround a portion of the non-conductive material.

Abstract: An inductor is disclosed, including a first wire, a non-conductive material, and a shell. The non-conductive material may cover the first wire, with a portion of each end of the first wire uncovered. The shell may include a top portion and a bottom portion and include at least one magnetized layer and at least one gap between the first portion and the second portion. The shell may also surround a portion of the non-conductive material.

Abstract: In an embodiment, a memory controller in an integrated circuit may generate refreshes for one or more DRAMs coupled to the integrated circuit according to a refresh rate. The integrated circuit may include one or more temperature sensors. A rate of change of the temperature may be determined from the temperature sensors. If the rate is greater than a threshold, the memory controller may generate refreshes according to a refresh rate specified by the DRAMs. If the rate is less than the threshold, the memory controller may generate refreshes at a reduced refresh rate.

Abstract: In an embodiment, a memory controller in an integrated circuit may generate refreshes for one or more DRAMs coupled to the integrated circuit according to a refresh rate. The integrated circuit may include one or more temperature sensors. A rate of change of the temperature may be determined from the temperature sensors. If the rate is greater than a threshold, the memory controller may generate refreshes according to a refresh rate specified by the DRAMs. If the rate is less than the threshold, the memory controller may generate refreshes at a reduced refresh rate.

Abstract: In an embodiment, a memory controller in an integrated circuit may generate refreshes for one or more DRAMs coupled to the integrated circuit according to a refresh rate. The integrated circuit may include one or more temperature sensors. A rate of change of the temperature may be determined from the temperature sensors. If the rate is greater than a threshold, the memory controller may generate refreshes according to a refresh rate specified by the DRAMs. If the rate is less than the threshold, the memory controller may generate refreshes at a reduced refresh rate.

Abstract: In an embodiment, a memory controller in an integrated circuit may generate refreshes for one or more DRAMs coupled to the integrated circuit according to a refresh rate. The integrated circuit may include one or more temperature sensors. A rate of change of the temperature may be determined from the temperature sensors. If the rate is greater than a threshold, the memory controller may generate refreshes according to a refresh rate specified by the DRAMs. If the rate is less than the threshold, the memory controller may generate refreshes at a reduced refresh rate.

Abstract: In an embodiment, a memory controller in an integrated circuit may generate refreshes for one or more DRAMs coupled to the integrated circuit according to a refresh rate. The integrated circuit may include one or more temperature sensors. A rate of change of the temperature may be determined from the temperature sensors. If the rate is greater than a threshold, the memory controller may generate refreshes according to a refresh rate specified by the DRAMs. If the rate is less than the threshold, the memory controller may generate refreshes at a reduced refresh rate.

Abstract: An inductor is disclosed, including a first wire, a non-conductive material, and a shell. The non-conductive material may cover the first wire, with a portion of each end of the first wire uncovered. The shell may include a top portion and a bottom portion and include at least one magnetized layer and at least one gap between the first portion and the second portion. The shell may also surround a portion of the non-conductive material.

Abstract: Techniques are disclosed relating to power management of an integrated circuit. In one embodiment, an integrated circuit includes a plurality of temperature sensors configured to measure a plurality of temperatures at different locations in the integrated circuit. The integrated circuit further includes a power management circuit configured to determine a set of guard bands based on a temperature difference determined using the plurality of temperatures. The power management circuit is configured to adjust, using the set of guard bands, a particular one of the plurality of temperatures, and to use the adjusted particular temperature to manage power consumption of the integrated circuit. In some embodiments, the power management circuit is configured to manage the power consumption by adjusting a voltage supplied to the integrated circuit, the adjusted voltage being based on the adjusted particular temperature.

Abstract: Packages and methods of formation are described. In an embodiment, a system in package (SiP) includes first and second redistribution layers (RDLs), stacked die between the first and second RDLs, and conductive pillars extending between the RDLs. A molding compound may encapsulate the stacked die and conductive pillars between the first and second RDLs.

Abstract: In some embodiments, a method may be provided for calibrating integrated circuit temperature sensors. The method may include sensing a first temperature using a first temperature sensor and a second temperature using a second temperature sensor. The first temperature sensor may be calibrated and is external to a package of the integrated circuit. The second temperature sensor may be included in the integrated circuit. The method may include increasing a temperature of the integrated circuit. The method may include allowing the integrated circuit and the package to thermally equilibrate over a first period of time. The method may include sensing a first slope of a temperature decay by the first temperature sensor. The method may include sensing a second slope of a temperature decay by the second temperature sensor. The method may include calibrating the second temperature sensor responsive to a difference between the first and second temperatures and the first and second slopes.

Abstract: Packages and methods of formation are described. In an embodiment, a system in package (SiP) includes first and second redistribution layers (RDLs), stacked die between the first and second RDLs, and conductive pillars extending between the RDLs. A molding compound may encapsulate the stacked die and conductive pillars between the first and second RDLs.

Abstract: A method of assembling a semiconductor chip device is provided that includes placing an interposer on a first semiconductor chip. The interposer includes a first surface seated on the first semiconductor chip and a second surface adapted to thermally contact a heat spreader. The second surface includes a first aperture. A second semiconductor chip is placed in the first aperture.

Abstract: In some embodiments, a semiconductor device package assembly may include a first substrate. The semiconductor device package assembly may include a first die electrically connected to the first substrate such that the first die is directly bonded to the first substrate. The semiconductor device package assembly may include a second substrate directly bonded to a surface of the first die. The semiconductor device package assembly may include an electronic memory module. The electronic memory module may be directly bonded to the second substrate. The semiconductor device package assembly may include a thermally conductive material directly applied to the electronic memory module. The semiconductor device package assembly may include a heat spreader directly bonded to the thermally conductive material. The heat spreader may function to transfer heat from the first die and the electronic memory module through the heat spreader from the first side to the second side.

Abstract: Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.