Abstract: A PoP (package-on-package) package includes a bottom package coupled to a top package. Terminals on the top of the bottom package are coupled to terminals on the bottom of the top package with an electrically insulating material located between the upper surface of the bottom package and the lower surface of the top package. The bottom package and the top package are coupled during a process that applies force to bring the packages together while heating the packages.

Abstract: In some embodiments, a semiconductor device package assembly may include a first substrate. The semiconductor device package assembly may include a first die electrically connected to the first substrate such that the first die is directly bonded to the first substrate. The semiconductor device package assembly may include a second substrate directly bonded to a surface of the first die. The semiconductor device package assembly may include an electronic memory module. The electronic memory module may be directly bonded to the second substrate. The semiconductor device package assembly may include a thermally conductive material directly applied to the electronic memory module. The semiconductor device package assembly may include a heat spreader directly bonded to the thermally conductive material. The heat spreader may function to transfer heat from the first die and the electronic memory module through the heat spreader from the first side to the second side.

Abstract: A PoP (package-on-package) package includes a bottom package coupled to a top package. Terminals on the top of the bottom package are coupled to terminals on the bottom of the top package with an electrically insulating material located between the upper surface of the bottom package and the lower surface of the top package. The bottom package and the top package are coupled during a process that applies force to bring the packages together while heating the packages.

Abstract: In some embodiments, a method may be provided for calibrating integrated circuit temperature sensors. The method may include sensing a first temperature using a first temperature sensor and a second temperature using a second temperature sensor. The first temperature sensor may be calibrated and is external to a package of the integrated circuit. The second temperature sensor may be included in the integrated circuit. The method may include increasing a temperature of the integrated circuit. The method may include allowing the integrated circuit and the package to thermally equilibrate over a first period of time. The method may include sensing a first slope of a temperature decay by the first temperature sensor. The method may include sensing a second slope of a temperature decay by the second temperature sensor. The method may include calibrating the second temperature sensor responsive to a difference between the first and second temperatures and the first and second slopes.

Abstract: A PoP (package-on-package) package includes a bottom package coupled to a top package. Terminals on the top of the bottom package are coupled to terminals on the bottom of the top package with an electrically insulating material located between the upper surface of the bottom package and the lower surface of the top package. The bottom package and the top package are coupled during a process that applies force to bring the packages together while heating the packages.

Abstract: A PoP (package-on-package) package includes a bottom package coupled to a top package. Terminals on the top of the bottom package are coupled to terminals on the bottom of the top package with an electrically insulating material located between the upper surface of the bottom package and the lower surface of the top package. The bottom package and the top package are coupled during a process that applies force to bring the packages together while heating the packages.

Abstract: Embodiments of systems and methods for improved measurement of transient thermal responses in electronic systems are described herein. Embodiments of the disclosure use the known thermal transfer function of an electronic system to generate an equivalent resistor-capacitor (RC) network having a dynamic response that is identical to a given power excitation as the actual electronic system would have to that power excitation. Using the analogy between thermal and electrical systems, a Foster RC network is constructed, comprising a plurality of RC stages in which resistors and capacitors are connected in parallel. Subsequently, the analog thermal RC network is converted into an infinite impulse response (IIR) digital filter, whose coefficients can be obtained the Z-transform of the analog thermal RC network. This IIR digital filter establishes the recursive relationship between temperature output at the current time step and measured power input at the previous time step.

Abstract: Embodiments of systems and methods for improved measurement of transient thermal responses in electronic systems are described herein. Embodiments of the disclosure use the known thermal transfer function of an electronic system to generate an equivalent resistor-capacitor (RC) network having a dynamic response that is identical to a given power excitation as the actual electronic system would have to that power excitation. Using the analogy between thermal and electrical systems, a Foster RC network is constructed, comprising a plurality of RC stages in which resistors and capacitors are connected in parallel. Subsequently, the analog thermal RC network is converted into an infinite impulse response (IIR) digital filter, whose coefficients can be obtained the Z-transform of the analog thermal RC network. This IIR digital filter establishes the recursive relationship between temperature output at the current time step and measured power input at the previous time step.

Abstract: A method of assembling a semiconductor chip device is provided that includes placing an interposer on a first semiconductor chip. The interposer includes a first surface seated on the first semiconductor chip and a second surface adapted to thermally contact a heat spreader. The second surface includes a first aperture. A second semiconductor chip is placed in the first aperture.

Abstract: Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.

Abstract: Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.

Abstract: A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.

Abstract: Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.

Abstract: A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.