Abstract: A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removing target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate in the peripheral portion is reduced; and removing the peripheral portion starting from the peripheral modification layer. A first crack is developed from the peripheral modification layer toward the second substrate. The peripheral modification layer is formed such that a lower end of the first crack is located above the non-bonding region and an inner end of the non-bonding region is located at a diametrically outer side than the first crack.

Abstract: There is provided a solid-state imaging device including: a first semiconductor layer including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated; a pixel separation section that is provided in the first semiconductor layer, and partitions a plurality of the pixels from each other; a second semiconductor layer that is provided with a pixel transistor and is stacked on the first semiconductor layer, the pixel transistor that reads the signal electric charge of the electric charge accumulation section; and a first shared coupling section that is provided between the second semiconductor layer and the first semiconductor layer, and is provided to straddle the pixel separation section and is electrically coupled to a plurality of the electric charge accumulation sections.

Abstract: Semiconductor devices and corresponding methods of manufacture are disclosed. The method includes forming a first device structure on a first substrate, a first laser liftoff layer on the first device structure, a protective layer on the first laser liftoff layer, and a second substrate on the protective layer. The method includes de-attaching, through applying radiation on the first laser liftoff layer, the protective layer from the first laser liftoff layer, with a first surface of the second substrate remaining in contact with a second surface of the protective layer. The protective layer is transparent to the radiation.

Abstract: A method of processing a substrate that includes: forming an infrared (IR) absorbing separation layer over a first substrate; forming one or more layers over the IR absorbing separation layer; bonding the first substrate and a second substrate at a bonding interface between the one or more layers and the second substrate using a direct bonding technique to form a wafer stack; exposing the wafer stack to an infrared (IR) light irradiation to separate the first substrate from the one or more layers.

Abstract: A grommet (20) includes a tubular portion (21). The tubular portion extends along a first direction (DR1), and has a tip end (21a) and a base end (21b) located opposite to the tip end in the first direction. The tubular portion is provided with a through hole (21c) extending in the first direction and opening at the tip end and the base end of the tubular portion. When the tubular portion is viewed from the tip end along the first direction, a first opening edge (21d) has a first portion (21da), the first opening edge being an opening edge of the through hole at the tip end of the tubular portion.

Abstract: A bat includes a handle having a proximate end and a distal end, a barrel having a hollow portion that accommodates the distal end, and a first damping section at least partially sandwiched between the handle and the barrel in the interior of the hollow portion. The first damping section includes a first portion in contact with each of the handle and the barrel in the interior of the hollow portion, and a second portion disposed closer to the proximate end than the first portion, the second portion being in contact with an inner peripheral surface of the barrel and not being in contact with an outer peripheral surface of the handle. In a cross section along a center axis of the barrel, the barrel has a depression depressed relative to the inner peripheral surface in the cross section, the second portion has a protrusion fitted in the depression.

Abstract: A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removing target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate in the peripheral portion is reduced; and removing the peripheral portion starting from the peripheral modification layer. A first crack is developed from the peripheral modification layer toward the second substrate. The peripheral modification layer is formed such that a lower end of the first crack is located above the non-bonding region and an inner end of the non-bonding region is located at a diametrically outer side than the first crack.

Abstract: A processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removal target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate at the peripheral portion is reduced; forming a reference modification layer, which serves as a determination reference of a formation position of either the peripheral modification layer or the non-bonding region, at a non-bonding surface of the first substrate not bonded to the second substrate; and removing the peripheral portion starting from the peripheral modification layer.

Abstract: A processing apparatus includes a controller configured to control an operation of forming condensing points in a processing target object. In forming the condensing points by radiating a laser light to an inside of the processing target object periodically from a modifying device while rotating the processing target object held by a holder relative to the modifying device by a rotating mechanism and, also, by moving the modifying device in a diametrical direction relative to the holder by a moving mechanism, the controller controls a number and an arrangement of the condensing points, which are simultaneously formed at different positions in a plane direction of the processing target object, based on a relative rotation number of the processing target object and a radiation pitch of the laser light.

Abstract: A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other is provided. A device layer including multiple devices is formed on a front surface side of the first substrate. The substrate processing method includes forming a light leakage prevention layer by radiating first laser light to an oxygen-containing film formed between the device layer and a position where a modification layer serving as a starting point for separation of the first substrate is formed; forming the modification layer by radiating second laser light to an inside of the first substrate after the forming of the light leakage prevention layer; and separating the first substrate starting from the modification layer to thin the first substrate.

Abstract: In forming modification layers by radiating laser light to an inside of a processing target object from a modifying device periodically while rotating the processing target object held by a holder relative to the modifying device by a rotating mechanism and by moving the modifying device relative to the holder in a diametrical direction by a moving mechanism, a boundary position of the laser light in the diametrical direction is calculated, the boundary position being a position where a circumferential distance between the modification layers becomes a required threshold value, and a diametrical distance between the modification layers is reduced in a moving direction of the modifying device from the boundary position and/or a frequency of the laser light is reduced.

Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate and a second substrate are bonded to each other includes a substrate holder configured to hold the combined substrate; a laser radiating unit configured to radiate laser light in a pulse shape to a laser absorbing layer formed between the first substrate and the second substrate; a moving mechanism configured to move the substrate holder and the laser radiating unit relative to each other; and a controller configured to control the laser radiating unit and the moving mechanism. The controller sets an interval of the laser light radiated to the laser absorbing layer based on a thickness of the laser absorbing layer.

Abstract: A racket frame includes a face portion. The face portion includes an inner circumferential surface, an outer circumferential surface, a first end portion (tip end portion), a second end portion (rear end portion), and a side end portion. The face portion is provided with a plurality of through holes in a circumferential direction of the face portion. Each of the plurality of through holes penetrates the inner circumferential surface and the outer circumferential surface of the face portion. The plurality of through holes include a first hole and a second hole adjacent to each other. The first hole and the second hole are arranged in at least one of the first end portion (tip end portion), the second end portion (rear end portion), and the side end portion, and are inclined such that a distance therebetween becomes shorter from the outer circumferential surface toward the inner circumferential surface.

Abstract: A processing apparatus includes a controller configured to control an operation of forming condensing points in a processing target object. In forming the condensing points by radiating a laser light to an inside of the processing target object periodically from a modifying device while rotating the processing target object held by a holder relative to the modifying device by a rotating mechanism and, also, by moving the modifying device in a diametrical direction relative to the holder by a moving mechanism, the controller controls a number and an arrangement of the condensing points, which are simultaneously formed at different positions in a plane direction of the processing target object, based on a relative rotation number of the processing target object and a radiation pitch of the laser light.

Abstract: Provided is a laser processing apparatus configured to irradiate a substrate including a first main surface and a second main surface opposite to the first main surface with processing laser light. The laser processing apparatus includes: a processing irradiation unit configured to irradiate the substrate with the processing laser light from the second main surface side; an observation irradiation unit configured to irradiate the substrate with observation transmission light from the second main surface side; an imaging element configured to image the observation transmission light from the substrate; and a controller configured to execute a processing process of irradiating the substrate with the processing laser light by controlling the processing irradiation unit, and a characteristic acquisition process of irradiating the substrate with the observation transmission light, imaging the observation transmission light from the substrate.

Abstract: The substrate processing method includes processes (A) to (D). The process (A) prepares a laminated substrate including a first substrate, a first absorption layer that absorbs laser light, a second absorption layer having an absorption coefficient with respect to the laser light higher than that of the first absorption layer, a device layer, and a second substrate in this order. The process (B) irradiates the laser light with respect to the first substrate from a side opposite to the second substrate. The process (C) irradiates the laser light transmitted through the first substrate on the first absorption layer, to form a modified layer in the first absorption layer. The process (D) separates the first substrate and the second substrate from each other using the modified layer as a starting point.

Abstract: A substrate processing apparatus configured to process a substrate by radiating laser light to the substrate includes a substrate holder configured to hold the substrate; a laser radiation lens configured to radiate the laser light to the substrate held by the substrate holder; a laser oscillator configured to emit the laser light toward a space above a substrate holding surface of the substrate holder; a mirror configured to change, above the substrate holder, a direction of the laser light emitted from the laser oscillator into a horizontal direction; and an optical system configured to adjust an output of the laser light incident from the mirror, and guide the laser light to the laser radiation lens.

Abstract: An optical integrated circuit module includes an optical integrated circuit element that includes as optical waveguide that is made by using an organic electro-optical material, and a cover that seals, as vacuum sealing, at least the optical waveguide that is disposed on the optical integrated circuit element. In addition, the optical integrated circuit module includes an oxygen getter that is provided in an inner part of the cover and that absorbs oxygen contained in the inner part of the cover.

Abstract: A stacked substrate manufacturing method includes (A) to (D) described below. (A) forming a bonding layer, which includes an oxide layer, on a surface of a first semiconductor substrate. (B) bringing the oxide layer of the bonding layer into contact with a second semiconductor substrate, and bonding the first semiconductor substrate and the second semiconductor substrate with the bonding layer therebetween. (C) forming, after the bonding of the first semiconductor substrate and the second semiconductor substrate, a modification layer with a laser beam on a first division plane along which the first semiconductor substrate is to be divided in a thickness direction thereof. (D) thinning the first semiconductor substrate bonded to the second semiconductor substrate with the bonding layer therebetween by dividing the first semiconductor substrate starting from the modification layer formed at the first division plane.

Abstract: A semiconductor chip manufacturing method includes (A) to (E) described below. (A) preparing a stacked substrate including a first semiconductor substrate, a device layer, a separation layer, and a third semiconductor substrate in this order. (B) dicing the first semiconductor substrate, the device layer, and the separation layer. (C) attaching the diced stacked substrate to a tape from an opposite side to the third semiconductor substrate, and mounting the diced stacked substrate to a frame with the tape therebetween. (D) radiating, after mounting the stacked substrate to the frame, a laser beam penetrating the third semiconductor substrate to the separation layer to form a modification layer at an interface between the third semiconductor substrate and the separation layer, or at an inside of the separation layer. (E) separating the third semiconductor substrate and the separation layer starting from the modification layer.