Abstract: This invention includes a first filter (27) connected between a susceptor (21) and ground and having a variable impedance, a sensor (28) for detecting an electrical signal based on the state of a plasma (P) generated in a process chamber (11), and a control means (36) for controlling the impedance of the first filter (27) on the basis of a detection result output from the sensor (28). Thus, a preferable plasma distribution to match the object of the plasma process can be realized.

Abstract: A plasma processing apparatus includes a first high frequency power for outputting a first high frequency, electrically connected to a first electrode disposed inside a depressurizable processing chamber; a heater power supply electrically connected to a heating element provided in the first electrode via filter circuits for reducing noise of the first high frequency. The plasma processing apparatus further includes air core primary inductors provided in primary stages of the filter circuits when seen from the heating element; and a grounded conductive case for surrounding or accommodating the primary inductors.

Abstract: A method inspects a process performance of a capacitively coupled plasma processing apparatus which generates a plasma for a plasma processing by applying a radio frequency power between a first electrode and a second electrode disposed in a processing vessel to face the first electrode in parallel. The method includes measuring an impedance of a radio frequency transmission path ranging from a rear surface of the first electrode to a ground potential part and sweeping a frequency to thereby obtain a frequency characteristic of a real resistance component of the impedance; reading a specific property value of a horn-like peak which appears from the frequency characteristic of the real resistance component; and determining efficaciousness or inferiority of the process performance of the plasma processing apparatus based on the peak property value.

Abstract: An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

Abstract: An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

Abstract: A plasma processing apparatus performs a desired plasma processing on a target substrate by using a plasma generated from a processing gas by forming a high frequency electric field in an evacuable processing chamber having an electrode. The plasma processing apparatus includes a high frequency power supply for outputting a high frequency power; and a central power feeder connected with a central portion of a rear surface of the electrode to supply the high frequency power from the high frequency power supply to the electrode. The plasma processing apparatus further includes a peripheral power feeder connected with a peripheral portion of the rear surface of the electrode in parallel with the central power feeder to supply the high frequency power from the high frequency power supply to the electrode.

Abstract: An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.

Abstract: In the present invention, a probe which detects a time varying magnetic flux density in a direction around a center axis of a processing space is provided in a process vessel of a plasma processing apparatus. The probe detects an induced electromotive force generated in a coil as the time varying magnetic flux density, and a computer calculates an amount of radio-frequency current in the process vessel from the induced electromotive force, based on a predetermined calculation principle.

Abstract: In the present invention, two coil-shaped probes each detecting the intensity of a magnetic field in a direction around a center axis of a processing space are provided in a process vessel of a plasma processing apparatus. Each of the probes detects an induced electromotive force generated in the coil, and a computer calculates an amount of radio-frequency current from the induced electromotive force, based on a predetermined calculation principle. A difference between the amounts of the radio-frequency current detected by the probes is calculated, and a loss radio-frequency current amount passing out of a plasma area between upper and lower electrodes is calculated, whereby the flow of the radio-frequency current in the plasma is known.

Abstract: There is provided a plasma processing apparatus which processes a substrate by generating plasma in a process vessel by supply of radio frequency power from a radio frequency power source to at least one of a pair of vertically opposed electrodes disposed in the process vessel, the apparatus including an impedance varying circuit which is connected to at least one of the pair of electrodes and in which an impedance varying part varying impedance on the electrode side of the plasma generated in the process vessel and a resistor are connected in series.

Abstract: In a plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to at least one of an upper electrode and a lower electrode disposed to vertically face each other in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed, a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is provided in the process vessel in an exposed state, and an impedance varying circuit varying impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is connected to the chemical component emitting member.

Abstract: In a plasma processing apparatus including a vacuum-evacuable processing chamber, a first lower electrode for supporting a substrate to be processed thereon is disposed in the processing chamber and an upper electrode is disposed above the first lower electrode to face the first lower electrode. Further, a second lower electrode is disposed under the first lower electrode while being electrically isolated from the first lower electrode. A processing gas supply unit supplies a processing gas into a space between the upper electrode and the first lower electrode. A first high frequency power supply unit applies a first high frequency power of a first frequency to the first lower electrode, and a second high frequency power supply unit applies a second high frequency power of a second frequency higher than the first frequency to the second lower electrode.

Abstract: A substrate processing apparatus capable of improving the degree of freedom for installation of a deposit monitoring apparatus component used for direct deposit analysis. A deposit monitoring apparatus of the substrate processing apparatus for monitoring deposit in a processing chamber in which a substrate is processed includes an optical fiber having a portion thereof exposed in the processing chamber. Incident light is emitted to the optical fiber from a light-emitting device connected to one end of the optical fiber, and light having passed through the optical fiber is received by a light-receiving device connected to another end of the optical fiber.

Abstract: A substrate processing apparatus enable fouling due to deposit to be monitored in real time. To monitor deposit attached to an inner wall surface of a processing chamber in which processing is carried out on a substrate, a deposit monitoring apparatus of the substrate processing apparatus includes a sensor for measuring a capacitance between two conductors spaced apart from each other and both connected to the sensor. The capacitance between the conductors increases with increase in an mount of deposit and reflects the state of fouling due to deposit.

Abstract: An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a variable DC power supply to apply a DC voltage to the upper electrode, so as to cause the absolute value of a self-bias voltage on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode side to generate predetermined pressed plasma.

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

Abstract: A plasma processing apparatus for processing a substrate by using a plasma includes a processing chamber for accommodating and processing the substrate therein, a lower electrode for mounting the substrate thereon in the processing chamber, an upper electrode disposed to face the lower electrode in the processing chamber, a radio frequency power supply for supplying a radio frequency power to at least one of the lower and the upper electrode, to thereby generate the plasma between the lower and the upper electrode, and an electrical characteristic control unit for adjusting an impedance of a circuit at the side of an electrode to the plasma for a frequency of at least one radio frequency wave present in the processing chamber such that the circuit does not resonate.

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.

Abstract: An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.