Patents by Inventor Yoichi Nogami

Yoichi Nogami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10407645
    Abstract: A coated ?-sulfofatty acid alkyl ester salt particle group containing ?-sulfofatty acid alkyl ester salt particles (A) and a zeolite particle group-containing coating component (B) with which the particles (A) are coated, in which the zeolite particle group is a zeolite particle group (b1) having a mean particle size of equal to or greater than 0.8 ?m and less than 3.8 ?m.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: September 10, 2019
    Assignee: Lion Corporation
    Inventors: Yoichi Ebashi, Yohei Nogami, Takashi Kobayashi, Kensuke Itakura, Kenji Morimura, Masashi Hara, Hideaki Watanabe
  • Patent number: 10242928
    Abstract: A semiconductor device includes: a semiconductor substrate having a main plane; a semiconductor element provided on the main plane of the semiconductor substrate; an electrode pad provided on the main plane of the semiconductor substrate and connected to the semiconductor element; a guard ring surrounding the semiconductor element and the electrode pad, and provided on the main plane of the semiconductor substrate; and an insulating film covering all region of a semiconductor of the main plane of the semiconductor substrate exposed inside the guard ring, wherein the insulating film is made of a water impermeable material.
    Type: Grant
    Filed: July 10, 2015
    Date of Patent: March 26, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventor: Yoichi Nogami
  • Patent number: 10147661
    Abstract: A semiconductor device includes: a semiconductor substrate having a main plane; a semiconductor element provided on the main plane of the semiconductor substrate; an electrode pad provided on the main plane of the semiconductor substrate and connected to the semiconductor element; a guard ring surrounding the semiconductor element and the electrode pad, and provided on the main plane of the semiconductor substrate; and an insulating film covering all region of a semiconductor of the main plane of the semiconductor substrate exposed inside the guard ring, wherein the insulating film is made of a water impermeable material.
    Type: Grant
    Filed: July 12, 2017
    Date of Patent: December 4, 2018
    Assignee: Mitsubishi Electric Corporation
    Inventor: Yoichi Nogami
  • Publication number: 20170309535
    Abstract: A semiconductor device includes: a semiconductor substrate having a main plane; a semiconductor element provided on the main plane of the semiconductor substrate; an electrode pad provided on the main plane of the semiconductor substrate and connected to the semiconductor element; a guard ring surrounding the semiconductor element and the electrode pad, and provided on the main plane of the semiconductor substrate; and an insulating film covering all region of a semiconductor of the main plane of the semiconductor substrate exposed inside the guard ring, wherein the insulating film is made of a water impermeable material.
    Type: Application
    Filed: July 12, 2017
    Publication date: October 26, 2017
    Applicant: Mitsubishi Electric Corporation
    Inventor: Yoichi NOGAMI
  • Patent number: 9741634
    Abstract: A semiconductor device includes: a semiconductor substrate having a main plane; a semiconductor element provided on the main plane of the semiconductor substrate; an electrode pad provided on the main plane of the semiconductor substrate and connected to the semiconductor element; a guard ring surrounding the semiconductor element and the electrode pad, and provided on the main plane of the semiconductor substrate; and an insulating film covering all region of a semiconductor of the main plane of the semiconductor substrate exposed inside the guard ring, wherein the insulating film is made of a water impermeable material.
    Type: Grant
    Filed: July 27, 2016
    Date of Patent: August 22, 2017
    Assignee: Mitsubishi Electric Corporation
    Inventor: Yoichi Nogami
  • Patent number: 9716185
    Abstract: A field effect transistor includes: a semiconductor substrate having a main surface; a plurality of source electrodes and a plurality of drain electrodes alternately disposed and ohmic-connected with the main surface of the semiconductor substrate; a plurality of gate electrodes Schottky-connected with the main surface of the semiconductor substrate and respectively disposed between the plurality of source electrodes and the plurality of drain electrodes; and a Schottky electrode Schottky-connected with the main surface of the semiconductor substrate, wherein each of the plurality of drain electrodes has first and second portions separated from each other, a sum of widths of the first and second portions of each drain electrode is smaller than a width of one source electrode, the Schottky electrode is disposed between the first portion and the second portion of the drain electrode.
    Type: Grant
    Filed: January 21, 2016
    Date of Patent: July 25, 2017
    Assignee: Mitsubishi Electric Corporation
    Inventors: Yoichi Nogami, Kenichi Horiguchi, Norio Higashisaka, Shinsuke Watanabe, Toshiaki Kitano
  • Patent number: 9508564
    Abstract: A plurality of semiconductor element is formed on a substrate. A plurality of sealing windows and a support portion supporting the plurality of sealing windows are formed on a SOI substrate. The SOI substrate is pressured against the substrate by using a pressurizing member and the plurality of sealing windows of the SOI substrate is bonded to the substrate via a low melting point glass member arranged around the plurality of semiconductor elements. The support portion is separated from the plurality of sealing windows bonded to the substrate.
    Type: Grant
    Filed: July 19, 2013
    Date of Patent: November 29, 2016
    Assignee: Mitsubishi Electric Corporation
    Inventors: Yoshinori Yokoyama, Kazuyo Endo, Jun Fujita, Shinnosuke Soda, Kazuyasu Nishikawa, Yoichi Nogami, Yoshitsugu Yamamoto, Akira Inoue
  • Publication number: 20160336250
    Abstract: A semiconductor device includes: a semiconductor substrate having a main plane; a semiconductor element provided on the main plane of the semiconductor substrate; an electrode pad provided on the main plane of the semiconductor substrate and connected to the semiconductor element; a guard ring surrounding the semiconductor element and the electrode pad, and provided on the main plane of the semiconductor substrate; and an insulating film covering all region of a semiconductor of the main plane of the semiconductor substrate exposed inside the guard ring, wherein the insulating film is made of a water impermeable material.
    Type: Application
    Filed: July 27, 2016
    Publication date: November 17, 2016
    Applicant: Mitsubishi Electric Corporation
    Inventor: Yoichi NOGAMI
  • Publication number: 20160322487
    Abstract: A field effect transistor includes: a semiconductor substrate having a main surface; a plurality of source electrodes and a plurality of drain electrodes alternately disposed and ohmic-connected with the main surface of the semiconductor substrate; a plurality of gate electrodes Schottky-connected with the main surface of the semiconductor substrate and respectively disposed between the plurality of source electrodes and the plurality of drain electrodes; and a Schottky electrode Schottky-connected with the main surface of the semiconductor substrate, wherein each of the plurality of drain electrodes has first and second portions separated from each other, a sum of widths of the first and second portions of each drain electrode is smaller than a width of one source electrode, the Schottky electrode is disposed between the first portion and the second portion of the drain electrode.
    Type: Application
    Filed: January 21, 2016
    Publication date: November 3, 2016
    Applicant: Mitsubishi Electric Corporation
    Inventors: Yoichi NOGAMI, Kenichi HORIGUCHI, Norio HIGASHISAKA, Shinsuke WATANABE, Toshiaki KITANO
  • Publication number: 20160099193
    Abstract: A semiconductor device includes: a semiconductor substrate having a main plane; a semiconductor element provided on the main plane of the semiconductor substrate; an electrode pad provided on the main plane of the semiconductor substrate and connected to the semiconductor element; a guard ring surrounding the semiconductor element and the electrode pad, and provided on the main plane of the semiconductor substrate; and an insulating film covering all region of a semiconductor of the main plane of the semiconductor substrate exposed inside the guard ring, wherein the insulating film is made of a water impermeable material.
    Type: Application
    Filed: July 10, 2015
    Publication date: April 7, 2016
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventor: Yoichi NOGAMI
  • Publication number: 20150243530
    Abstract: A plurality of semiconductor element is formed on a substrate. A plurality of sealing windows and a support portion supporting the plurality of sealing windows are formed on a SOI substrate. The SOI substrate is pressured against the substrate by using a pressurizing member and the plurality of sealing windows of the SOI substrate is bonded to the substrate via a low melting point glass member arranged around the plurality of semiconductor elements. The support portion is separated from the plurality of sealing windows bonded to the substrate.
    Type: Application
    Filed: July 19, 2013
    Publication date: August 27, 2015
    Applicant: Mitsubishi Electric Corporation
    Inventors: Yoshinori Yokoyama, Kazuyo Endo, Jun Fujita, Shinnosuke Soda, Kazuyasu Nishikawa, Yoichi Nogami, Yoshitsugu Yamamoto, Akira Inoue
  • Patent number: 9117896
    Abstract: A semiconductor device includes: a Si substrate having first and second major surfaces facing in opposite directions; a buffer layer of AlxGa1-xN (0?x?1) on the first major surface of the Si substrate; an epitaxially grown crystalline layer of AlyGa1-yN (0?y?1, x?y) on the buffer layer; a transistor on the epitaxially grown crystalline layer; and a filler of AlxGa1-xN and having the same x as the buffer layer. A through hole in the Si substrate extends from the second major surface to the buffer layer, and the through hole is filled with the filler.
    Type: Grant
    Filed: June 4, 2014
    Date of Patent: August 25, 2015
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Hiroyuki Okazaki, Yoshitaka Kamo, Yoichi Nogami, Hidetoshi Koyama, Shinichi Miyakuni
  • Publication number: 20150084103
    Abstract: A semiconductor device includes: a Si substrate having first and second major surfaces facing in opposite directions; a buffer layer of AlxGa1-xN (0?x?1) on the first major surface of the Si substrate; an epitaxially grown crystalline layer of AlyGa1-yN (0?y?1, x?y) on the buffer layer; a transistor on the epitaxially grown crystalline layer; and a filler of AlxGa1-xN and having the same x as the buffer layer. A through hole in the Si substrate extends from the second major surface to the buffer layer, and the through hole is filled with the filler.
    Type: Application
    Filed: June 4, 2014
    Publication date: March 26, 2015
    Applicant: Mitsubishi Electric Corporation
    Inventors: Hiroyuki Okazaki, Yoshitaka Kamo, Yoichi Nogami, Hidetoshi Koyama, Shinichi Miyakuni
  • Patent number: 8816493
    Abstract: A semiconductor device includes: a substrate; a semiconductor element on the substrate; an interconnection on the substrate and electrically connected to the semiconductor element; a window frame member on the substrate, surrounding the semiconductor element, and in contact with the interconnection; and a sealing window bonded to the window frame member and encapsulating the semiconductor element. The window frame member is a low melting glass and has a sheet resistance of 106-1010 ?/?.
    Type: Grant
    Filed: June 19, 2013
    Date of Patent: August 26, 2014
    Assignee: Mitsubishi Electric Corporation
    Inventors: Yoichi Nogami, Yoshitsugu Yamamoto, Akira Inoue, Yoshinori Yokoyama, Jun Fujita, Kazuyo Endo, Shinnosuke Soda, Kazuyasu Nishikawa
  • Publication number: 20140175615
    Abstract: A method for manufacturing a semiconductor device includes: forming a semiconductor element on a main surface of a substrate; forming a low melting glass film having a melting point of 450° C. or less on the main surface and the semiconductor element; heat treating the substrate while pressing the low melting glass film toward the main surface of the substrate with a pressurizing jig that is insulating or semi-insulating, and sintering the low melting glass film; and leaving the pressurizing jig on the low melting glass film after sintering the low melting glass film.
    Type: Application
    Filed: September 25, 2013
    Publication date: June 26, 2014
    Applicant: Mitsubishi Electric Corporation
    Inventors: Yoichi Nogami, Yoshitsugu Yamamoto, Yoshinori Yokoyama, Shinnosuke Soda
  • Publication number: 20140077280
    Abstract: A semiconductor device includes: a substrate; a semiconductor element on the substrate; an interconnection on the substrate and electrically connected to the semiconductor element; a window frame member on the substrate, surrounding the semiconductor element, and in contact with the interconnection; and a sealing window bonded to the window frame member and encapsulating the semiconductor element. The window frame member is a low melting glass and has a sheet resistance of 106-1010 ?/?.
    Type: Application
    Filed: June 19, 2013
    Publication date: March 20, 2014
    Inventors: Yoichi Nogami, Yoshitsugu Yamamoto, Akira Inoue, Yoshinori Yokoyama, Jun Fujita, Kazuyo Endo, Shinnosuke Soda, Kazuyasu Nishikawa
  • Patent number: 8519440
    Abstract: A semiconductor device includes: a semiconductor substrate of a compound semiconductor material; a buffer layer, a channel layer, and a Schottky junction forming layer sequentially disposed on the semiconductor substrate, the buffer layer, the channel layer, and the Schottky junction forming layer each being compound semiconductor materials; a source electrode and a drain electrode located on the Schottky junction forming layer; and a gate electrode disposed between the source and drain electrodes and forming a Schottky junction with the Schottky junction forming layer. The carrier density in the channel layer varies with distance from a top surface of the channel layer and is inversely proportional to the third power of depth into the channel layer from the top surface of the channel layer. The buffer layer has a lower electron affinity than the channel layer and is a different compound semiconductor material from the channel layer.
    Type: Grant
    Filed: May 1, 2012
    Date of Patent: August 27, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventor: Yoichi Nogami
  • Publication number: 20120217557
    Abstract: A semiconductor device includes: a semiconductor substrate of a compound semiconductor material; a buffer layer, a channel layer, and a Schottky junction forming layer sequentially disposed on the semiconductor substrate, the buffer layer, the channel layer, and the Schottky junction forming layer each being compound semiconductor materials; a source electrode and a drain electrode located on the Schottky junction forming layer; and a gate electrode disposed between the source and drain electrodes and forming a Schottky junction with the Schottky junction forming layer. The carrier density in the channel layer varies with distance from a top surface of the channel layer and is inversely proportional to the third power of depth into the channel layer from the top surface of the channel layer. The buffer layer has a lower electron affinity than the channel layer and is a different compound semiconductor material from the channel layer.
    Type: Application
    Filed: May 1, 2012
    Publication date: August 30, 2012
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventor: Yoichi NOGAMI
  • Patent number: 8193566
    Abstract: A semiconductor device includes: a compound semiconductor substrate; a buffer layer, a channel layer, and a Schottky junction forming layer sequentially disposed on the compound semiconductor substrate, the buffer layer, the channel layer, and the Schottky junction forming layer each being compound semiconductor materials; a source electrode and a drain electrode located on the Schottky junction forming layer; and a gate electrode disposed between the source and drain electrodes and forming a Schottky junction with the Schottky junction forming layer. The dopant impurity concentration in the channel layer is inversely proportional to the third power of depth into the channel layer from a top surface of the channel layer. The gate electrode has a gate length in a range from 0.2 ?m to 0.6 ?m.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: June 5, 2012
    Assignee: Mitsubishi Electric Corporation
    Inventor: Yoichi Nogami
  • Publication number: 20120007153
    Abstract: A semiconductor device includes: a compound semiconductor substrate; a buffer layer, a channel layer, and a Schottky junction forming layer sequentially disposed on the compound semiconductor substrate, the buffer layer, the channel layer, and the Schottky junction forming layer each being compound semiconductor materials; a source electrode and a drain electrode located on the Schottky junction forming layer; and a gate electrode disposed between the source and drain electrodes and forming a Schottky junction with the Schottky junction forming layer. The dopant impurity concentration in the channel layer is inversely proportional to the third power of depth into the channel layer from a top surface of the channel layer. The gate electrode has a gate length in a range from 0.2 ?m to 0.6 ?m.
    Type: Application
    Filed: September 21, 2011
    Publication date: January 12, 2012
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventor: Yoichi NOGAMI