Patents by Inventor Yoichi Ootsuka

Yoichi Ootsuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210134856
    Abstract: The present disclosure relates to an imaging element, a fabrication method, and electronic equipment by which an image having higher picture quality can be imaged. The imaging element includes a first light absorbing film formed in an effective pixel peripheral region, the effective pixel peripheral region being provided so as to enclose an outer side of an effective pixel region in which a plurality of pixels is disposed in a matrix, so as to cover a semiconductor substrate, a microlens layer provided as an upper layer than the first light absorbing film and having a microlens formed so as to condense light for each of the pixels in the effective pixel region, and a second light absorbing film provided as an upper layer than the microlens layer and formed in the effective pixel peripheral region. The present technology can be applied, for example, to a CMOS image sensor.
    Type: Application
    Filed: January 17, 2018
    Publication date: May 6, 2021
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Yoichi OOTSUKA
  • Publication number: 20210020546
    Abstract: Provided is a semiconductor device having high planarity in an in-plane direction. This semiconductor device includes a semiconductor substrate, a first plating film pattern, a second plating film pattern, and an insulating layer. The semiconductor substrate has a first surface, and a second surface on a side opposite to the first surface. The first plating film pattern includes a first portion that covers a first regional portion of the first surface, and a second portion that is stacked to cover a portion of the first portion. The second plating film pattern includes a third portion that covers a second regional portion different from the first regional portion of the first surface, and also includes a fourth portion that is stacked to cover a portion of the third portion. A portion between the second portion and the fourth portion is filled with the insulating layer.
    Type: Application
    Filed: February 18, 2019
    Publication date: January 21, 2021
    Inventors: TAKAHIRO KAMEI, YOICHI OOTSUKA
  • Publication number: 20200395400
    Abstract: The present disclosure relates to a solid-state image-capturing device, a semiconductor apparatus, an electronic apparatus, and a manufacturing method that enable improvement in reliability of through electrodes and increase in density of through electrodes. A common opening portion is formed including a through electrode formation region that is a region in which the plurality of through electrodes electrically connected respectively to a plurality of electrode pads provided on a joint surface side from a device formation surface of a semiconductor substrate is formed. Then, a plurality of through portions is formed so as to penetrate to the plurality of respective electrode pads in the common opening portion, and wiring is formed along the common opening portion and the through portions from the electrode pads to the device formation surface corresponding to the respective through electrodes. The present technology can be applied to a layer-type solid-state image-capturing device, for example.
    Type: Application
    Filed: March 8, 2019
    Publication date: December 17, 2020
    Inventor: YOICHI OOTSUKA
  • Patent number: 10868052
    Abstract: The present disclosure relates to an imaging element, a manufacturing method, and an electronic apparatus which enable an image having higher image quality to be captured. In a valid pixel region in which a plurality of pixels is arranged in a matrix, a plurality of microlenses for condensing light is formed in a corresponding relation with the pixels, and in a valid pixel peripheral region which is provided so as to surround an outside of the valid pixel region, a plurality of slit type light diffraction gratings is formed such that a longitudinal direction thereof extends in a direction orthogonal to a side direction of the valid pixel region. Then, an anti-reflection film is deposited on the microlenses and the slit type light diffraction gratings. The present technology, for example, can be applied to a CMOS image sensor.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: December 15, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Yoichi Ootsuka
  • Publication number: 20200258924
    Abstract: The present disclosure relates to a backside illumination type solid-state imaging device, a manufacturing method for a backside illumination type solid-state imaging device, an imaging apparatus, and electronic equipment by which the manufacturing cost can be reduced. A singulated memory circuit and a singulated logic circuit are laid out in a horizontal direction and are embedded by an oxide film and flattened, and then are stacked so as to be contained in a plane direction under a solid-state imaging element. The present disclosure can be applied to an imaging apparatus.
    Type: Application
    Filed: October 16, 2018
    Publication date: August 13, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Taizo TAKACHI, Yuichi YAMAMOTO, Suguru SAITO, Satoru WAKIYAMA, Yoichi OOTSUKA, Naoki KOMAI, Kaori TAKIMOTO, Tadashi IIJIMA, Masaki HANEDA, Masaya NAGATA
  • Publication number: 20200243589
    Abstract: The present disclosure relates to a solid-state imaging device, a manufacturing method thereof, and an electronic apparatus, in which both oblique light characteristics and sensitivity can be improved. The solid-state imaging device includes pixel array unit in which a plurality of pixels is two-dimensionally arranged in a matrix and multi-stage light shielding walls are provided between the pixels. The present disclosure is applicable to, for example, a back-illuminated type solid-state imaging device and the like.
    Type: Application
    Filed: April 17, 2020
    Publication date: July 30, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Ippei YOSHIBA, Yoichi OOTSUKA
  • Patent number: 10658408
    Abstract: The present disclosure relates to a solid-state imaging device, a manufacturing method thereof, and an electronic apparatus, in which both oblique light characteristics and sensitivity can be improved. The solid-state imaging device includes pixel array unit in which a plurality of pixels is two-dimensionally arranged in a matrix and multi-stage light shielding walls are provided between the pixels. The present disclosure is applicable to, for example, a back-illuminated type solid-state imaging device and the like.
    Type: Grant
    Filed: January 4, 2016
    Date of Patent: May 19, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Ippei Yoshiba, Yoichi Ootsuka
  • Publication number: 20200075653
    Abstract: Image quality of an imaging element having a configuration in which pixels having color filters are arranged two-dimensionally is prevented from being lowered._An imaging element includes a plurality of pixels and incident light attenuation sections. The pixel includes a color filter transmitting incident light having a predetermined wavelength, and a photoelectric conversion section that produces an electric charge according to the light transmitted through the color filter. The incident light attenuation section is disposed between the color filters of the adjacent pixels, is configured to be different in surface height from the color filters, and attenuates light not transmitted through the color filter but incident on the photoelectric conversion section of the pixel where the color filter is disposed.
    Type: Application
    Filed: May 2, 2018
    Publication date: March 5, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yuichi SEKI, Yoichi OOTSUKA
  • Publication number: 20200066776
    Abstract: There is provided an image pickup element including a non-planar layer having a non-planar light incident surface in a light receiving region, and a microlens of an inorganic material which is provided on a side of the light incident surface of the non-planar layer, and collects incident light.
    Type: Application
    Filed: October 3, 2019
    Publication date: February 27, 2020
    Inventors: Yoichi OOTSUKA, Atsushi YAMAMOTO, Kensaku MAEDA
  • Patent number: 10490586
    Abstract: Provided is a solid-state imaging device that includes: a semiconductor substrate having photodiodes formed for respective pixels, the photodiodes performing photoelectric conversion; color filters that pass light in the colors corresponding to the respective pixels, the color filters being stacked on the light incident surface side of the semiconductor substrate; and a light shielding film provided between the color filters of the respective pixels, the light shielding film being formed by stacking a first light shielding film and a second light shielding film, the first light shielding film and the second light shielding film being formed with two different materials from each other. The first light shielding film is formed with a metal having a light shielding effect, and the second light shielding film is formed with a resin having photosensitivity. The present technology can be applied to back-illuminated CMOS image sensors, for example.
    Type: Grant
    Filed: September 18, 2015
    Date of Patent: November 26, 2019
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Yoichi Ootsuka
  • Publication number: 20190348452
    Abstract: The present disclosure relates to an imaging element, a manufacturing method, and an electronic apparatus which enable an image having higher image quality to be captured. In a valid pixel region in which a plurality of pixels is arranged in a matrix, a plurality of microlenses for condensing light is formed in a corresponding relation with the pixels, and in a valid pixel peripheral region which is provided so as to surround an outside of the valid pixel region, a plurality of slit type light diffraction gratings is formed such that a longitudinal direction thereof extends in a direction orthogonal to a side direction of the valid pixel region. Then, an anti-reflection film is deposited on the microlenses and the slit type light diffraction gratings. The present technology, for example, can be applied to a CMOS image sensor.
    Type: Application
    Filed: December 28, 2017
    Publication date: November 14, 2019
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Yoichi OOTSUKA
  • Patent number: 10461107
    Abstract: There is provided an image pickup element including a non-planar layer having a non-planar light incident surface in a light receiving region, and a microlens of an inorganic material which is provided on a side of the light incident surface of the non-planar layer, and collects incident light.
    Type: Grant
    Filed: May 22, 2013
    Date of Patent: October 29, 2019
    Assignee: Sony Corporation
    Inventors: Yoichi Ootsuka, Atsushi Yamamoto, Kensaku Maeda
  • Publication number: 20190312074
    Abstract: A solid-state imaging device includes: a first lens layer; and a second lens layer, wherein the second lens layer is formed at least at a periphery of each first microlens formed based on the first lens layer, and the second lens layer present at a central portion of each of the first microlenses is thinner than the second lens layer present at the periphery of the first microlens or no second lens layer is present at the central portion of each of the first microlenses.
    Type: Application
    Filed: June 13, 2019
    Publication date: October 10, 2019
    Applicant: Sony Corporation
    Inventors: Yoichi Ootsuka, Tomoyuki Yamashita, Kiyotaka Tabuchi, Yoshinori Toumiya, Akiko Ogino
  • Patent number: 10418397
    Abstract: A solid-state imaging device includes pixels each having a photoelectric conversion element for converting incident light to an electric signal, color filters associated with the pixels and having a plurality of color filter components, microlenses converging the incident light through the color filters to the photoelectric conversion elements, a light shielding film disposed between the color filter components of the color filters, and a nonplanarized adhesive film provided between the color filters and the light shielding film.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: September 17, 2019
    Assignee: Sony Corporation
    Inventors: Tomoharu Ogita, Atsushi Yamamoto, Keiji Tatani, Yoichi Ootsuka, Kiyotaka Tabuchi
  • Publication number: 20190244995
    Abstract: A solid-state image pickup device includes: a filter section including filters that are disposed corresponding to respective pixels, and each allowing light of a color that corresponds to corresponding one of the pixels to transmit therethrough, in which the pixels are each configured to receive the light of the predetermined color; and a microlens array section including a plurality of microlenses each configured to collect the light for corresponding one of the pixels, in which the microlenses are stacked with respect to the filter section, and are arranged in an array pattern corresponding to the respective pixels. The microlenses have two or more shapes that are different from one another corresponding to the respective colors of the light to be received by the pixels, and each having an end that is in contact with the end of adjacent one of the microlenses.
    Type: Application
    Filed: April 18, 2019
    Publication date: August 8, 2019
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Yoichi Ootsuka
  • Patent number: 10355038
    Abstract: A solid-state imaging device includes: a first lens layer; and a second lens layer, wherein the second lens layer is formed at least at a periphery of each first microlens formed based on the first lens layer, and the second lens layer present at a central portion of each of the first microlenses is thinner than the second lens layer present at the periphery of the first microlens or no second lens layer is present at the central portion of each of the first microlenses.
    Type: Grant
    Filed: July 19, 2017
    Date of Patent: July 16, 2019
    Assignee: Sony Corporation
    Inventors: Yoichi Ootsuka, Tomoyuki Yamashita, Kiyotaka Tabuchi, Yoshinori Toumiya, Akiko Ogino
  • Patent number: 10297628
    Abstract: A solid-state image pickup device includes: a filter section including filters that are disposed corresponding to respective pixels, and each allowing light of a color that corresponds to corresponding one of the pixels to transmit therethrough, in which the pixels are each configured to receive the light of the predetermined color; and a microlens array section including a plurality of microlenses each configured to collect the light for corresponding one of the pixels, in which the microlenses are stacked with respect to the filter section, and are arranged in an array pattern corresponding to the respective pixels. The microlenses have two or more shapes that are different from one another corresponding to the respective colors of the light to be received by the pixels, and each having an end that is in contact with the end of adjacent one of the microlenses.
    Type: Grant
    Filed: November 30, 2015
    Date of Patent: May 21, 2019
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Yoichi Ootsuka
  • Patent number: 10088608
    Abstract: The present technology relates to a lens array and a manufacturing method therefor, a solid-state imaging apparatus, and an electronic apparatus that can improve the AF performance while suppressing the deterioration of image quality. A lens array includes microlenses that are formed corresponding to phase difference detection pixels that are provided to be mixed in imaging pixels. Each of the microlenses is formed such that a lens surface thereof is a substantially spherical surface, the microlens has a rectangular shape in a planar view and four corners are not substantially rounded, and a bottom surface in vicinity of an opposite-side boundary portion that includes an opposite-side center portion of a pixel boundary portion in a cross-sectional view is higher than a bottom surface in vicinity of a diagonal boundary portion that includes a diagonal boundary portion. The present technology is applicable to a lens array of a CMOS image sensor, for example.
    Type: Grant
    Filed: September 12, 2014
    Date of Patent: October 2, 2018
    Assignee: SONY CORPORATION
    Inventors: Yoichi Ootsuka, Kenju Nishikido, Ippei Yoshiba
  • Patent number: 10008529
    Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: June 26, 2018
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Takashi Nakashikiryo, Yoshiaki Kitano, Yuuji Nishimura, Kouichi Itabasi, Ryou Chiba, Yosuke Takita, Mitsuru Ishikawa, Toyomi Jinwaki, Yuichi Seki, Masaya Shimoji, Yoichi Ootsuka, Takafumi Nishi
  • Patent number: 9985066
    Abstract: There is provided a solid state imaging device including a plurality of imaging pixels arranged two-dimensionally in a matrix configuration and phase difference detecting pixels arranged scatteredly among the imaging pixels, the solid state imaging device including: a first microlens formed for each of the imaging pixels; a planarization film having a lower refractive index than the first microlens and formed on the first microlens; and a second microlens formed only on the planarization film of the phase difference detecting pixel.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: May 29, 2018
    Assignee: Sony Corporation
    Inventors: Shinichiro Noudo, Yoichi Ootsuka