Patents by Inventor Yoichi Ueda
Yoichi Ueda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948958Abstract: The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.Type: GrantFiled: June 9, 2022Date of Patent: April 2, 2024Assignee: SONY GROUP CORPORATIONInventors: Hideyuki Honda, Tetsuya Uchida, Toshifumi Wakano, Yusuke Tanaka, Yoshiharu Kudoh, Hirotoshi Nomura, Tomoyuki Hirano, Shinichi Yoshida, Yoichi Ueda, Kosuke Nakanishi
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Publication number: 20240088184Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.Type: ApplicationFiled: November 16, 2023Publication date: March 14, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Tetsuya UCHIDA, Ryoji SUZUKI, Hisahiro ANSAI, Yoichi Ueda, Shinichi YOSHIDA, Yukari TAKEYA, Tomoyuki HIRANO, Hiroyuki MORI, Hirotoshi NOMURA, Yoshiharu KUDOH, Masashi OHURA, Shin IWABUCHI
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Patent number: 11888008Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.Type: GrantFiled: September 29, 2021Date of Patent: January 30, 2024Assignee: Sony Semiconductor Solutions CorporationInventors: Tetsuya Uchida, Ryoji Suzuki, Hisahiro Ansai, Yoichi Ueda, Shinichi Yoshida, Yukari Takeya, Tomoyuki Hirano, Hiroyuki Mori, Hirotoshi Nomura, Yoshiharu Kudoh, Masashi Ohura, Shin Iwabuchi
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Publication number: 20230307469Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.Type: ApplicationFiled: April 3, 2023Publication date: September 28, 2023Inventors: HIROSHI TAYANAKA, KENTARO AKIYAMA, YORITO SAKANO, TAKASHI OINOUE, YOSHIYA HAGIMOTO, YUSUKE MATSUMURA, NAOYUKI SATO, YUKI MIYANAMI, YOICHI UEDA, RYOSUKE MATSUMOTO
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Patent number: 11637135Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.Type: GrantFiled: December 3, 2021Date of Patent: April 25, 2023Assignee: SONY GROUP CORPORATIONInventors: Hiroshi Tayanaka, Kentaro Akiyama, Yorito Sakano, Takashi Oinoue, Yoshiya Hagimoto, Yusuke Matsumura, Naoyuki Sato, Yuki Miyanami, Yoichi Ueda, Ryosuke Matsumoto
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Publication number: 20220302185Abstract: The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.Type: ApplicationFiled: June 9, 2022Publication date: September 22, 2022Applicant: SONY GROUP CORPORATIONInventors: Hideyuki HONDA, Tetsuya UCHIDA, Toshifumi WAKANO, Yusuke TANAKA, Yoshiharu KUDOH, Hirotoshi NOMURA, Tomoyuki HIRANO, Shinichi YOSHIDA, Yoichi UEDA, Kosuke NAKANISHI
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Patent number: 11437001Abstract: Provided are an image processing apparatus, a program and an image processing method capable of avoiding interference with the function of another program. An image processing apparatus includes a position information detection unit configured to detect position information indicating a position on a display, a region position setting unit configured to set the position of the region of interest on the display based on the position information, and an image processing unit configured to perform image process on at least one image among an image inside of the region of interest and an image outside of the region of interest. The region position setting unit, when the position information is changed with the image process, sets the position of the region of interest based on the position information immediately before the change.Type: GrantFiled: January 10, 2018Date of Patent: September 6, 2022Assignee: EIZO CorporationInventors: Yuji Haruki, Ikumi Arai, Naoaki Hirata, Yoichi Ueda, Tomoharu Yachikami
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Patent number: 11398515Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.Type: GrantFiled: May 18, 2020Date of Patent: July 26, 2022Assignee: SONY CORPORATIONInventors: Hideyuki Honda, Tetsuya Uchida, Toshifumi Wakano, Yusuke Tanaka, Yoshiharu Kudoh, Hirotoshi Nomura, Tomoyuki Hirano, Shinichi Yoshida, Yoichi Ueda, Kosuke Nakanishi
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Patent number: 11329078Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.Type: GrantFiled: September 2, 2020Date of Patent: May 10, 2022Assignee: SONY CORPORATIONInventors: Rena Suzuki, Hiroki Tojinbara, Ryoto Yoshita, Yoichi Ueda
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Publication number: 20220093655Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.Type: ApplicationFiled: December 3, 2021Publication date: March 24, 2022Inventors: HIROSHI TAYANAKA, KENTARO AKIYAMA, YORITO SAKANO, TAKASHI OINOUE, YOSHIYA HAGIMOTO, YUSUKE MATSUMURA, NAOYUKI SATO, YUKI MIYANAMI, YOICHI UEDA, RYOSUKE MATSUMOTO
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Publication number: 20220020799Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.Type: ApplicationFiled: September 29, 2021Publication date: January 20, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Tetsuya UCHIDA, Ryoji SUZUKI, Hisahiro ANSAI, Yoichi Ueda, Shinichi YOSHIDA, Yukari TAKEYA, Tomoyuki HIRANO, Hiroyuki MORI, Hirotoshi NOMURA, Yoshiharu KUDOH, Masashi OHURA, Shin IWABUCHI
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Patent number: 11217612Abstract: The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.Type: GrantFiled: November 14, 2019Date of Patent: January 4, 2022Assignee: SONY CORPORATIONInventors: Hiroshi Tayanaka, Kentaro Akiyama, Yorito Sakano, Takashi Oinoue, Yoshiya Hagimoto, Yusuke Matsumura, Naoyuki Sato, Yuki Miyanami, Yoichi Ueda, Ryosuke Matsumoto
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Patent number: 11171167Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.Type: GrantFiled: February 22, 2018Date of Patent: November 9, 2021Assignee: Sony Semiconductor Solutions CorporationInventors: Tetsuya Uchida, Ryoji Suzuki, Hisahiro Ansai, Yoichi Ueda, Shinichi Yoshida, Yukari Takeya, Tomoyuki Hirano, Hiroyuki Mori, Hirotoshi Nomura, Yoshiharu Kudoh, Masashi Ohura, Shin Iwabuchi
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Publication number: 20210143196Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.Type: ApplicationFiled: February 22, 2018Publication date: May 13, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Tetsuya UCHIDA, Ryoji SUZUKI, Hisahiro ANSAI, Yoichi Ueda, Shinichi YOSHIDA, Yukari TAKEYA, Tomoyuki HIRANO, Hiroyuki MORI, Hirotoshi NOMURA, Yoshiharu KUDOH, Masashi OHURA, Shin IWABUCHI
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Publication number: 20200403015Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.Type: ApplicationFiled: September 2, 2020Publication date: December 24, 2020Applicant: Sony CorporationInventors: Rena Suzuki, Hiroki Tojinbara, Ryoto Yoshita, Yoichi Ueda
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Patent number: 10818722Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.Type: GrantFiled: July 12, 2019Date of Patent: October 27, 2020Assignee: Sony CorporationInventors: Rena Suzuki, Hiroki Tojinbara, Ryoto Yoshita, Yoichi Ueda
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Publication number: 20200286937Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.Type: ApplicationFiled: May 18, 2020Publication date: September 10, 2020Applicant: SONY CORPORATIONInventors: Hideyuki HONDA, Tetsuya UCHIDA, Toshifumi WAKANO, Yusuke TANAKA, Yoshiharu KUDOH, Hirotoshi NOMURA, Tomoyuki HIRANO, Shinichi YOSHIDA, Yoichi UEDA, Kosuke NAKANISHI
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Patent number: 10700114Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.Type: GrantFiled: April 11, 2017Date of Patent: June 30, 2020Assignee: Sony CorporationInventors: Hideyuki Honda, Tetsuya Uchida, Toshifumi Wakano, Yusuke Tanaka, Yoshiharu Kudoh, Hirotoshi Nomura, Tomoyuki Hirano, Shinichi Yoshida, Yoichi Ueda, Kosuke Nakanishi
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Publication number: 20200083262Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.Type: ApplicationFiled: November 14, 2019Publication date: March 12, 2020Inventors: HIROSHI TAYANAKA, KENTARO AKIYAMA, YORITO SAKANO, TAKASHI OINOUE, YOSHIYA HAGIMOTO, YUSUKE MATSUMURA, NAOYUKI SATO, YUKI MIYANAMI, YOICHI UEDA, RYOSUKE MATSUMOTO
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Publication number: 20200020306Abstract: Provided are an image processing apparatus, a program and an image processing method capable of avoiding interference with the function of another program. An image processing apparatus includes a position information detection unit configured to detect position information indicating a position on a display, a region position setting unit configured to set the position of the region of interest on the display based on the position information, and an image processing unit configured to perform image process on at least one image among an image inside of the region of interest and an image outside of the region of interest. The region position setting unit, when the position information is changed with the image process, sets the position of the region of interest based on the position information immediately before the change.Type: ApplicationFiled: January 10, 2018Publication date: January 16, 2020Applicant: EIZO CorporationInventors: Yuji HARUKI, Ikumi ARAI, Naoaki HIRATA, Yoichi UEDA, Tomoharu YACHIKAMI