Abstract: A vertical gallium-nitrate-based LED and method of making a vertical gallium-nitrate-based LED using a stop layer is provided. Embodiments of the present invention use mechanical thinning and a plurality of superhard stop points to remove epitaxial layers with a high level of certainty. According one embodiment, the method of making a vertical LED includes forming a plurality of layers on a sapphire substrate, forming a plurality of stop points in the plurality of layers, removing the sapphire substrate and part of a u-GaN layer using mechanical thinning, wherein the mechanical thinning stops at an end of the plurality of stop points, selectively etching the u-GaN layer and exposing at least a part of the highly doped stop layer, and forming an n-electrode on the highly doped stop layer.

Abstract: An agent of a storage area network generates a first checksum value for a first set of zone configuration data used to at least initially configure the storage area network. At a later time, after a potential change to the first zone configuration data of the storage area network, the agent generates a checksum value based on current zone configuration data presently used to configure the zone in the storage area network. The agent then compares the first checksum value and the second checksum value to identify whether there has been a change to the first zone configuration data. That is, if the first checksum value does not equal the second checksum value, the agent flags that there has been a change to zone configuration data of the storage area network. Users can control behavior of zoning importation and activation depending on whether current zone configuration data has been changed.

Abstract: A method of making a thin gallium-nitride (GaN)-based semiconductor structure is provided. According to one embodiment of the invention, the method includes the steps of providing a substrate; sequentially forming one or more semiconductor layers on the substrate; etching a pattern in the one or more semiconductor layers; depositing a dielectrics layer; forming a photoresist on a portion of the dielectrics layer, wherein the portion of the dielectrics layer is deposited on the one or more semiconductor layers; depositing a primer; removing the photoresist layer, wherein the primer on the photoresist is also removed; depositing a superhard material, wherein the superhard material forms in the pattern; and removing the substrate. Accordingly, the superhard material may be selectively deposited in only areas where the superhard material is desired. Vertical GaN-based light emitting devices may then be formed by cutting the semiconductor structure.

Abstract: A vertical gallium-nitrate-based LED and method of making a vertical gallium-nitrate-based LED using a stop layer is provided. Embodiments of the present invention use mechanical thinning and a plurality of superhard stop points to remove epitaxial layers with a high level of certainty. According one embodiment, the method of making a vertical LED includes forming a plurality of layers on a sapphire substrate, forming a plurality of stop points in the plurality of layers, removing the sapphire substrate and part of a u-GaN layer using mechanical thinning, wherein the mechanical thinning stops at an end of the plurality of stop points, selectively etching the u-GaN layer and exposing at least a part of the highly doped stop layer, and forming an n-electrode on the highly doped stop layer.

Abstract: The present invention relates to a method of forming a two-dimensional pattern, which includes: dispersing a plurality of spheres on a substrate; using the spheres to form a mask on the substrate; etching the substrate; and removing the mask from the substrate. In addition, the present invention further relates to a method of processing a surface of a substrate, which includes: dispersing a plurality of spheres on the surface of the substrate; depositing a substance among the spheres; and removing the spheres to leave the deposited substance on the surface of the substrate. The method of the present invention achieves a quicker and simpler process with a lower cost. In addition, a light emitting device manufactured through the method of the present invention has preferred light extraction efficiency and a variable radiation field pattern.

Abstract: The present invention provides a method of super flat chemical mechanical polishing (SF-CMP) technology, which is a method characterized in replacing laser lift-off in a semiconductor fabricating process. SF-CMP has a main step of planting a plurality of polishing stop points before polishing the surface, which is characterized by hardness of the polishing stop points material being larger than hardness of the surface material. Therefore, the present method can achieve super flat polishing surface without removing polishing stop points.

Abstract: A light source for a lighting device has a reflector for receiving one or more light emitting diode devices. The reflector has reflective sides and a light exit. There is a side emitting LED device located in the reflector such that its primary light emitting direction towards the reflective sides such that light emitted from the LED device are reflected towards the light exit.

Abstract: A method of fabricating AlGaN/GaN enhancement-mode heterostructure field-effect transistors (HFET) using fluorine-based plasma immersion or ion implantation. The method includes: 1) generating gate patterns; 2) exposing the AlGaN/GaN heterostructure in the gate region to fluorine-based plasma treatment with photoresist as the treatment mask in a self-aligned manner; 3) depositing the gate metal to the plasma treated AlGaN/GaN heterostructure surface; 4) lifting off the metal except the gate electrode; and 5) high temperature post-gate annealing of the sample. This method can be used to shift the threshold voltage of a HFET toward a more positive value, and ultimately convert a depletion-mode HFET to an enhancement-mode HFET (E-HFET).

Abstract: A method for and devices utilizing monolithic integration of enhancement-mode and depletion-mode AlGaN/GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the enhancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing of the sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment. This method provides a complete planar process for GaN-based integrated circuits favored in high-density and high-speed applications.

Abstract: A nanoparticle ion detector includes an ion trap that receives charged particles ejected from a mass selection device. A laser beam illuminates the particles to induce fluorescence, which is detected by the photon detector. Particles are periodically dumped from the ion trap. A mass spectrum of the charged particles can be obtained by comparing signals from the photon detector with the particle ejection characteristics of the mass selection device.

Abstract: The present invention is to provide an apparatus for improving communication quality of PHS handset and method thereof, which enables any two PHS handsets to be extensions and communicate directly by utilizing a fixed private telephone or a fixed public telephone having a wireless communication exchange module as a main telephone, so that the PHS handsets are able to not only communicate directly therebetween but also make or receive a call through the connections among the fixed telephones and operate normally in an environment without having the external cell stations.

Abstract: The present invention discloses a personal handphone system (PHS) handset for children, which comprises a plurality of indicating lamps, a plurality of drawings corresponding to the indicating lamps, a plurality of arrow keys and an enter key for selecting the indicating lamp, a lit indicating lamp being selected by controlling the arrow keys, and a telephone number corresponding to an indicating lamp being stored in a memory of the handset, so that when a phone call is dialed from the handset by pressing the arrow keys to move the lit indicating lamp next to a drawing corresponding to the desired telephone number and pressing the enter key, a microprocessor of the handset reads the telephone number corresponding to the code of the indicating lamp from the memory and dials that telephone number directly.

Abstract: The present invention is to provide a system of increasing communication quality of a PHS handset in a PHS-based communication network including a plurality of PHS handsets each including a first bluetooth module, an indoor Internet phone including a second bluetooth module and a gateway coupled to the second bluetooth module and two different protocols. When the first bluetooth module is connecting to the second bluetooth module, signals received from the network by the Internet phone are transmitted to the gateway and then converted into signals complying with a bluetooth protocol, enabling the second bluetooth module to transmit the same to the PHS handset. The PHS handset is also able to transmit signals complying with the bluetooth protocol to the Internet phone, enabling the gateway to convert the same into the PHS signals and transmit them over the network.

Abstract: A nanoparticle ion detector includes an ion trap that receives charged particles ejected from a mass selection device. A laser beam illuminates the particles to induce fluorescence, which is detected by the photon detector. Particles are periodically dumped from the ion trap. A mass spectrum of the charged particles can be obtained by comparing signals from the photon detector with the particle ejection characteristics of the mass selection device.

Abstract: A mass spectrometer that includes an ion source, an ion trap, and a light detection module. The ion trap has two end-cap electrodes and a ring electrode. The ring electrode is positioned relative to the end-cap electrodes to confine a charged particle from the ion source within a confinement region when an audio frequency voltage having a first amplitude is applied between the ring electrode and the two end-cap electrodes. The charged particle is ejected from the ion trap when the audio frequency voltage increases to a second amplitude. The light detection module includes a light source that illuminates the ejected particle and a light detector that detects light scattered from the ejected particle.

Abstract: A modem having embedded network transmission protocols is provided. A fax/voice/high-speed data transmission 3-way modem is provided with an additional built-in Internet transmission protocol communication module. The communication module includes various Internet protocols (such as PPP, TCP/IP, UDP, HTTP, FTP, POP3, SMTP, etc) and various Internet application services that support those protocols. Moreover, the communication module can also connect to computers through either an internal line-connection end or a parallel/serial port. Furthermore, the network functions of network connection and the desired operations are established in advance under the support of the corresponding BIOS drivers, making the communication module capable of connecting to the network operations independently.

Abstract: A mass spectrometer that includes an ion source, an ion trap, and a light detection module. The ion trap has two end-cap electrodes and a ring electrode. The ring electrode is positioned relative to the end-cap electrodes to confine a charged particle from the ion source within a confinement region when an audio frequency voltage having a first amplitude is applied between the ring electrode and the two end-cap electrodes. The charged particle is ejected from the ion trap when the audio frequency voltage increases to a second amplitude. The light detection module includes a light source that illuminates the ejected particle and a light detector that detects light scattered from the ejected particle.

Abstract: A modem having embedded network transmission protocols is disclosed, that is, a fax/voice high-speed 3-ways data transmission modem having an additional inbuilt Internet transmission protocol communication module is presented. This communication module comprises various Internet protocols (such as PPP, TCP/IP, UDP, HTTP, FTP, POP3, SMTP, etc) and various Internet application services that support those protocols. Moreover, the communication module can also connect to computers through either an internal line-connection end or a parallel/serial port. Furthermore, the network functions of network connection and the desired operations are set out in advance under the support of the corresponding BIOS drivers, hence, making the module capable of connecting to the network operations independently.

Abstract: A system, a device and their relative methods for displaying the latest messages from an E-mail account under the conditions where there is no need to take the initiative in turning on a computer are disclosed. The incoming E-mail displaying system comprises: a displaying device for displaying new mails arrived from an E-mail box; a mail message service device responsive for searching a mail message in Internet, and responsive for transmitting the mail message through a transmission path; and a switching device responsive to the transmission path for receiving the mail message from the mail message service device and transmitting the mail message to the displaying device. Moreover, the displaying device can be further designed to comprise an input module, a telephone interface end, a displaying module, and a modem having embedded TCP/IP and E-mail client application et cetera functions. That is, enabling the displaying device to make a direct connection to Internet.