Abstract: An alternating current (AC) light emitting assembly and an AC light emitting device are disclosed. The AC light emitting assembly includes a substrate; a rectifier unit comprising a plurality of rectifier components arranged in a Wheatstone Bridge, for rectifying an AC signal into a direct current (DC) signal, each of the rectifier components having a high breakdown voltage and a low forward voltage; a light emitting unit electrically connected to the rectifier unit and comprising a plurality of light emitting components formed on the substrate, for emitting light when receiving the DC signal outputted by the rectifier unit; and two conductive electrodes electrically connected to the rectifier unit for receiving and transmitting the AC signal to the rectifier unit. The AC light emitting device includes two stacked and electrically connected AC light emitting assemblies.

Abstract: The present invention relates to a plasma display apparatus and driving method thereof. The plasma display apparatus and driving method thereof according to an embodiment of the present invention changes the number of sustain pulses according to a total operating time of a plasma display panel. The plasma display apparatus and driving method thereof according to an embodiment of the present invention can prevent a decrease in luminance and a decrease in the picture quality, which are incurred by an increase in a total operating time.

Abstract: A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor layer and the p-type semiconductor layer respectively. An AlGaInN thick film is on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface.

Abstract: A white-light LED with omni-directional reflectors includes an LED chip for emitting white-light. A light transmitting material surrounding the LED and phosphor grains is dispersed in order to excite fluorescence via emission of LED. Two omni-directional reflectors are implemented on the top and/or bottom of the LED symmetrically surrounding the light transmitting material and the LED chip. The light from the LED was reflected omni-directionally, via the dielectric omni-directional reflectors, to increasing the efficiency and/or spectral characteristics and uniformity of the visible light emission.

Abstract: A white-light LED with omni-directional reflectors includes an LED chip for emitting white-light. A light transmitting material surrounding the LED and phosphor grains is dispersed in order to excite fluorescence via emission of LED. Two omni-directional reflectors are implemented on the top and/or bottom of the LED symmetrically surrounding the light transmitting material and the LED chip. The light from the LED was reflected omni-directionally, via the dielectric omni-directional reflectors, to increasing the efficiency and/or spectral characteristics and uniformity of the visible light emission.

Abstract: This specification discloses a VCSEL (Vertical Cavity Surface-Emitting Laser) device with single-mode output. This device is given by coating a layer of antireflection-coating (AR-coating) film on a normal VCSEL device with multiple transverse mode output and forming a light-emitting window on the AR-coating film. Since the AR-coating film can lower the reflectivity of the VCSEL device with multiple transverse mode output and the Bragg reflector at the bottom of the AR-coating film, it is easier to form single-mode laser light when the current flows through areas not covered by the AR-coating film, outputting a single-mode laser beam. Through the power-current character curve and the spectrum properties, one can find an optimal electrical current value for controlling single-mode light output.

Abstract: A substrate, preferably silicon, or other suitable material has a layer of glass material disposed thereon. The glass material of the present disclosure has a substantially increased uniformity due to the reduction in bubbles as well as a relatively smooth top surface. By virtue of the reduction in the number and size of the bubbles in the glass the dielectric properties of the glass are more uniform. Additionally, the fact that the surface of the glass is much more smooth reduces the potential of prior structures to have an unacceptably thin glass layer due to the need to grind the surface smooth.

Abstract: A method of forming a glass layer on a substrate of material, for example, silicon, with the glass layer having a coefficient of thermal expansion which substantially matches the substrate. A slurry comprising glass powder and a solvent is applied to the substrate, as for example, by pouring, and a multi-step heating process is carried out with over-pressures of a highly diffusive gas such as hydrogen first, followed by a non-diffusive gas such as nitrogen to thereby create a glass layer having reduced bubbles and fewer bubbles than has heretofore been achieved.

Abstract: Method of producing a silicon structure for fabricating integrated circuit devices therein by forming a plurality of regions of N-type single crystal silicon of high resistivity inset in the surface of silicon of either P-type conductivity or of N-type conductivity of low resistivity. The silicon contiguous with the regions of high resistivity N-type silicon is converted to porous silicon by anodically treating in an aqueous solution of HF. Then, conductivity type imparting material is diffused through the porous silicon into portions of the regions of N-type conductivity to alter their electrical characteristics to P-type or to low resistivity N-type. The porous silicon is then oxidized to silicon oxide, electrically isolating each of the N-type regions and its associated portion.

Abstract: Submicron silicon structures are fabricated by repeat oxidation and stripping the walls of a U-groove leaving thin silicon fingers.This method may be used to fabricate a silicon transistor having an emitter and a collector separated by a channel. The channel is formed in a silicon finger by a Schottky base, which at zero bias pinches off conduction of the channel. A bias voltage on the Schottky base causes conduction. The channel has a very short length making the transistor capable of high frequency operation.

Abstract: A solar cell with improved energy conversion characteristics is formed from ordinary Czochralski or other types of silicon crystals that are sliced parallel to the growth axis or pulling direction. The slices are heat treated at a sufficiently high temperature and for a sufficiently long period of time to activate oxygen donor states in the slices. The heat treatment is of sufficient duration that at periodic maxima of oxygen concentration in the crystal it produces n-type regions where a background p-type dopant is overcompensated. Each n-type region thus formed is adjacent to a p-type region with a p-n junction therebetween. Collector contacts are applied at the faces of the slices to permit collection of carriers.