Abstract: The present invention provides compounds, methods for the synthesis thereof and methods for the use thereof in the treatment of various disorders including inflammatory or autoimmune disorders, and disorders involving malignancy or increased angiogenesis.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: An electrical connector (100) includes an insulative housing (11), a terminal module received in the insulative housing and a shielding shell (17) enclosing the insulative housing. The terminal module having an inner circuit board (130) and a number of magnetic coils (132). The inner circuit board defines a groove (1300). Each of magnetic coils includes a core and a number of wires wound on the core and electrically connected with the inner circuit board. Each magnetic coil is at least partially received in the groove to save space for reducing profile of the connector.

Abstract: There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.

Abstract: There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.

Abstract: An electrical connector has a circuit comprising a first side; a second side; a first differential channel located between the first side and the second side and comprising a first positive differential trace and a first negative differential trace for transmitting first differential signal; a second differential channel located between the first side and the second side comprising a second positive differential trace and a second negative differential trace for transmitting second differential signal; and a plurality of mating contacts connected to the second side and comprising a first contact connected to the first positive differential trace, a second contact connected to the first negative differential trace, a third contact connected to the second positive differential trace and a sixth contact connected to the second negative differential trace, the first contact, the second contact, the third second and the sixth contact are arranged one by one.

Abstract: There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.

Abstract: A transformer (100) includes a bar-shaped core (5), a number of coils (7) comprising a first winding group (71, 72) and a second winding group (73, 74) wound around the core, a housing (1) receiving the core and the coils, and a number of conductive terminals (3) being secured in the housing. The first winding group and the second winding group wound around different parts of the core. The coils are soldered to the conductive terminals (3). The coils (7) are wound around the core automatically by an automatic winder. Therefore, the cost of manufacturing the transformer is decreased.

Abstract: A modular jack circuit (100) is diposed between a cable side (10) for connecting with a mating plug and a physical side (20) for connecting with a mother board. The moular jack circuit comprises a first transmitting channel and a second transmitting channel. The moular jack circuit includes a number of filtering electronic elements (2, 3) and a number of relays (1, 4) disposed between the filtering electronic elements and the cable side. The first and second transmitting channels share the filtering electronic elements. The relays control the filtering electronic elements to transmit signals for the first and second channels at different times.

Abstract: A magnetics assembly (100) including a transformer (1) made of litz wire. The transformer includes a toroid core (2) and a bundle of wires (3) winding around the toroid core. The bundle of wires includes a first to eighth wires, and has a central portion with all eight wires twisted together and winding around the toroid core. A first and a second ends of the bundle of wires oppositely extend out from the toroidal core. The ends of the first to eighth wires are connected to form a primary and a secondary coils of the transformer, each of the primary and secondary coils having a central tap (35, 36) and carrying circuit in multiple wires.

Abstract: A modular jack (3) has an insulative housing (6), a printed circuit board (92), a number of cores (931-934) and a magnetic core (935), a number of conductive wires (936-939) respectively wind around the cores and then around the magnetic core together, and a number of grounding wires. The grounding wires has a first grounding wire having one end connected to the conductive wire and another end winding around the magnetic core for grounding, and other grounding wires respectively having one end load connected to the corresponding conductive wire and opposite end load directly connected to the first grounding wire.

Abstract: The present invention provides methods for the use of compounds having formula (I) in the treatment of various disorders including inflammatory or autoimmune disorders, and disorders involving malignancy or increased angiogenesis, wherein R1-R11, t, X, Y, Z, and n are as defined herein.

Abstract: A circuit board (100) includes a first shielding layer (20) extending horizontally, an accessorial shielding layer, a signal circuit layer (3) positioned between the first shielding layer and the accessorial shielding layer, and a circumferential shielding layer (6) surrounding the circuit board and electrically connecting with the first shielding layer and the accessorial shielding layer to improve shielding effect.

Abstract: A mobile terminal and its world time display method are disclosed. The mobile terminal executes a world time display function according to the occurrence of an event. A particular area is selectively received according to the executed world time display function, and time information and representative information of the selected area are obtained and displayed. The time information includes date, a time zone, and information about a time difference between an area where a terminal is currently located and the selected area. The representative information includes a building that represents the selected area, popular tourist attractions, animals and plants, a country code, an area code, traditional costumes, etc. Simple information with respect to the particular area as well as the time information of the particular area can be provided to the user.

Abstract: An electrical connector system includes a substrate (1) connected to PHY side and an electrical connector (3) mounted on the substrate (1), a transformer (5) and a common mode filter (7). The electrical connector (3) is used to mate with a cable assembly and so forms a Cable side. The transformer (5) further includes a first wire (51) having two opposite ends electrically connected to the PHY side and a second wire (53) having two opposite ends. The common mode filter (7) has a third wire (73) and a fourth wire (75) that are physically separated from and electrically connected to opposite ends of the second wire (53).

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.

Abstract: An electrical connector (100) to be mounted on a substrate provides signal channels between a first side and a second side. The electrical connector includes a transformer (210), a common mode filter (327) and a separated filter (328). The transformer includes a first wire (314) having two opposite ends electrically connected to said first side and a second wire (312) having two opposite ends and a center tap (313). The common mode filter includes a third wire (322) and a fourth wire (324), each of the third wire (322) and the fourth wire (324) having an end respectively electrically connected to the two opposite ends of the second wire (312). The separated filter (328) includes a fifth wire (326) separated from the common mode filter (327) and the transformer (310), the fifth wire (326) having an end electrically connected to the center tap (313) of the second wire (312). Opposite ends of the third, the fourth and the fifth wires (322, 324, 326) are electrically connected to the second side.

Abstract: An electrical connector (100) includes an insulative housing (11), a terminal module received in the insulative housing and a shielding shell (17) enclosing the insulative housing. The terminal module having an inner circuit board (130) and a number of magnetic coils (132). The inner circuit board defines a groove (1300). Each of magnetic coils includes a core and a number of wires wound on the core and electrically connected with the inner circuit board. Each magnetic coil is at least partially received in the groove to save space for reducing profile of the connector.

Abstract: A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.