Abstract: There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.

Abstract: An electrical connector assembly has an insulative housing (2) defining a number of receiving spaces (24) and a number of contact modules (4) inserted in the receiving spaces. Each contact module comprises a first substrate (41) having a pair of substrate halves (411), and a pair of conductive units respectively mounted on corresponding substrate halves. The first substrate has a number of circuit traces formed thereon and one electronic component (415) disposed on one substrate half. The circuit traces is electrically connected with the pair of conductive units and the electronic component. The pair of conductive units share the electronic component commonly via the circuit traces.

Abstract: A flip chip-type nitride semiconductor light emitting diode includes a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.

Abstract: Disclosed herein is an aqueous coating composition for plastic automotive interiors, including 1) a component selected from the group consisting of aqueous polyurethane resins, aqueous acrylic resins, and mixtures thereof, 2) an aqueous polyurethane resin having a hydroxyl group, 3) a micronized silica dispersant having an average particle size of 10˜30 ?m, 4) a polyethylene paraffin wax dispersant having an average particle size of 30˜100 nm, 5) a polysiloxane surface controlling agent, 6) a polyoxyethylene sorbitan monooleate stabilizer, 7) capsulated aromatic particles, and 8) a trifunctional hexamethlylenediisocyanate curing agent having a hydrophilic group.

Abstract: A modular jack (100) has a housing (10), a magnetic module (200) having a printed circuit board (21), a first and a second set of terminals (26, 221) mounted to the printed circuit board. The magnetic module includes a set of toroidal coil units (2) having a first core (23), a second core (24) and a third core (25), a number of first wires (233) wound around the first core and the third core, and a second wire (243) wound around the second core and the third core.

Abstract: An electrical connector (100) in accordance with the present invention includes an insulative housing (10) and a terminal module (20) received in the insulative housing. The terminal module includes a daughter board (21), a choke group, a number of mating terminals (24) mounted on a first side of the daughter board, and a connecting module (22) mounted on a second side the daughter board and having a number of connecting terminals (221). The choke group has a number of transformer chokes (23) mounted to the second side of the daughter board, and a number of surface mount device chokes (25) adapted for being applied in automatic manufacture and mounted the second side of the daughter board.

Abstract: A modular jack (3) has an insulative housing (6), a printed circuit board (92), a number of cores (931-934) and a magnetic core (935), a number of conductive wires (936-939) respectively wind around the cores and then around the magnetic core together, and a number of grounding wires. The grounding wires has a first grounding wire having one end connected to the conductive wire and another end winding around the magnetic core for grounding, and other grounding wires respectively having one end load connected to the corresponding conductive wire and opposite end load directly connected to the first grounding wire.

Abstract: A method of cutting carbon nanotubes and carbon nanotubes prepared by the same are disclosed. The cutting method includes preparing a ?-stacking complex including a doping metal, a non-polar molecule, and a bipolar solvent, adding carbon nanotubes to the ?-stacking complex, followed by stirring at room temperature to prepare a metal-doped carbon nanotube solution, washing and drying the metal-doped carbon nanotube solution to prepare a metal-doped carbon nanotube powder, and performing nitric acid treatment to the metal-doped carbon nanotube powder, followed by cutting and washing with distilled water. Carbon nanotubes having a short and uniform length and open terminals can be produced in mass via a simple process, thereby expanding the uses and applications of carbon nanotubes.

Abstract: There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.

Abstract: The present invention provides an electrical connector (100) including a magnetic module (200) for noise-filtering. The magnetic module (200) includes an interior printed circuit board (21), a common mode choke and a number of transformers mounted on the interior printed circuit board (21). Each of said common mode choke and transformers has a magnetic core (20,22) and a number of magnetic wires (23) winding around the magnetic cores (20,22), wherein the magnetic core (20) of the common mode choke defines two holes (203,205) parallel extending therethrough and forms a center wall (201) therebetween. The magnetic wires (23) of the common mode choke wind around the center wall (201) and through said two holes (203,205) in a same direction.

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured using the same. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention includes: forming a mask layer on a substrate; removing a portion of the mask layer to form openings provided as regions where light emitting structures are formed; forming a light emitting structure by sequentially growing a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer on the substrate through each of the openings of the mask layer; and forming first and second electrodes to be electrically connected to the first and second conductivity type nitride semiconductor layers, respectively.

Abstract: A nitride semiconductor light emitting device and a method of manufacturing the same, which can prevent crystal defects such as dislocation while ensuring uniform current spreading into an active layer. The nitride semiconductor light emitting device includes a first n-nitride semiconductor layer formed on a substrate, a first intermediate pattern layer formed on the first n-nitride semiconductor layer, the first intermediate pattern layer having a nanoscale dot structure made of Si compound, a second n-nitride semiconductor layer formed on the first n-nitride semiconductor layer, a second intermediate pattern layer formed on the second n-nitride semiconductor layer, the second intermediate pattern layer having a nanoscale dot structure made of Si compound, which is electrically insulating, a third n-nitride semiconductor layer formed on the second n-nitride semiconductor layer, an active layer formed on the third n-nitride semiconductor layer, and a p-nitride semiconductor layer formed on the active layer.

Abstract: A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlxGayIn1-x-yN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.

Abstract: There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency.

Abstract: The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlxGayIn(1-x-y)N layer, an active layer and a p-doped AlmGanIn(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlmGanIn(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.

Abstract: In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are capable of changing light inclination at the upper and lower surfaces of the substrate to decrease total reflection at the interfaces, thereby improving light emitting efficiency.

Abstract: A nitride-based semiconductor LED which is flip-chip bonded on a lead pattern of a sub-mount through a bump ball comprises a substrate; a light-emitting structure formed on the substrate; an electrode formed on the light-emitting structure; a protective film formed on the resulting structure having the electrode formed therein, the protective film exposing the electrode surface corresponding to a portion which is connected to the lead pattern of the sub-mount through a bump ball; and a grid-shape buffer film formed on the electrode surface exposed through the protective film.

Abstract: A Low Density Parity Check (LDPC) code encoding apparatus for a communication system is provided. The encoding apparatus receives information bits, and generates an LDPC code by encoding the information bits using an interleaving scheme. The interleaving scheme is generated such that when the LDPC code is punctured, there is no short-length cycle in a Tanner graph of the punctured LDPC code.