Abstract: A thin film transistor including a first polycrystalline semiconductor layer disposed on a substrate, a second polycrystalline semiconductor layer disposed on the first polycrystalline semiconductor layer, and metal catalysts configured to adjoin the first polycrystalline semiconductor layer and spaced apart from one another at specific intervals.

Abstract: An organic light-emitting display apparatus for forming a frame by utilizing a plurality of subfields to display gradation. The organic light-emitting display apparatus includes a light-emitting pixel on a display area, a dummy pixel on a dummy area adjacent to the display area, and a repair line coupled to the dummy pixel. The light-emitting pixel is configured to emit light according to a logic level of a data signal applied during each of the subfields, and to adjust an emission time. The repair line is configured to couple the dummy pixel to a light-emitting element when the light-emitting element is separated from the light-emitting pixel, to provide a path to control a light emission of the light-emitting element according to a logic level of a dummy data signal applied to the dummy pixel.

Abstract: A thin film transistor (TFT) array substrate, an organic light-emitting display apparatus, and a manufacturing method thereof are disclosed. One inventive aspect includes a first gate line formed on a substrate and a second gate line formed on the first gate line. A third gate line is formed on the second gate line and covers a top surface of the second gate line and the side portions of the first and second gate lines.

Abstract: A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Abstract: A display apparatus includes an active layer that overlaps a substrate and comprises a channel region. The display apparatus further includes an insulating layer disposed on the substrate and the active layer. The display apparatus further includes a gate electrode disposed on the insulating layer, overlapping the channel region, and comprising a first gate electrode layer and a second gate electrode layer, wherein the first gate electrode layer is formed of a first material and is disposed between the insulating layer and the second electrode layer, and wherein the second gate electrode layer is formed of a second material that is different from the first material. The display apparatus further includes a contact portion disposed on the insulating layer and comprising a first contact layer that is formed of the first material. The display apparatus further includes a pixel electrode that contacts the first contact layer.

Abstract: An organic light emitting diode display device is disclosed. The device includes, for example, a thin film transistor with an active layer on a substrate, a gate electrode, a source electrode, and a drain electrode, a pixel electrode formed on the same layer as the gate electrode, an electrode pattern partially exposing the pixel electrode and formed on the pixel electrode, a pixel electrode contact formed between the electrode pattern and the drain electrode and electrically connected to the drain electrode, a pixel defining film exposing the pixel electrode and formed to cover the drain electrode and the source electrode, an intermediate layer formed on the exposed pixel electrode and comprising an emissive layer, and an opposite electrode formed opposite the pixel electrode to at least partially cover the intermediate layer. A method of manufacturing the device is also disclosed.

Abstract: Provided is an organic light-emitting display apparatus including a substrate; and a plurality of pixels on the substrate, wherein each of the pixels comprise: an organic light-emitting device comprising a first electrode, a second electrode, and an intermediate layer between the first electrode and the second electrode, wherein the intermediate layer comprises an organic emission layer; a driving transistor configured to drive the organic light-emitting device; and a switching transistor electrically coupled to the driving transistor, wherein the gate electrode of the driving transistor comprises a first conductive layer, and a second conductive layer between the first conductive layer and the active layer of the driving transistor and has a smaller size than the first conductive layer, and the gate electrode of the switching transistor comprises a same material as the first conductive layer.

Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Abstract: A method of forming a polysilicon film includes: forming an amorphous silicon film on a substrate; adsorbing a metal catalyst on the amorphous silicon film, crystallizing the amorphous silicon film through heat treatment to form the polysilicon film, the polysilicon film including a grain internal region and a grain boundary where the metal catalyst remains, providing an etchant having different oxidation selectivities with respect to the grain internal region and the grain boundary, and etching a surface of the polysilicon film by the etchant to remove the metal catalyst remaining on the grain boundary.

Abstract: A thin film transistor including: an active layer formed on a substrate; a gate insulating layer pattern formed on a predetermined region of the active layer; a gate electrode formed on a predetermined region of the gate insulating layer pattern; an etching preventing layer pattern covering the gate insulating layer pattern and the gate electrode; and a source member and a drain member formed on the active layer and the etching preventing layer pattern.

Abstract: A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

Abstract: An organic light-emitting display device having an improved manufacturing procedure and an improved emission efficiency, and a method of manufacturing the organic light-emitting display device.

Abstract: A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes.

Abstract: A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

Abstract: A method of crystallizing a silicon layer and a method of manufacturing a thin film transistor using the same, the method of crystallizing the silicon layer including forming an amorphous silicon layer on a substrate; performing a hydrophobicity treatment on a surface of the amorphous silicon layer so as to obtain a hydrophobic surface thereon; forming a metallic catalyst on the amorphous silicon layer that has been subjected to the hydrophobicity treatment; and heat-treating the amorphous silicon layer including the metallic catalyst thereon to crystallize the amorphous silicon layer into a polycrystalline silicon layer.

Abstract: A thin film transistor includes a substrate, a semiconductor layer provided on the substrate and crystallized by using a metal catalyst, a gate electrode insulated from and disposed on the semiconductor layer, and a getter layer disposed between the semiconductor layer and the gate electrode and formed with a metal oxide having a diffusion coefficient that is less than that of the metal catalyst in the semiconductor layer.

Abstract: A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes.

Abstract: A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.

Abstract: A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes.