Abstract: Disclosed are a binder for a secondary battery anode including styrene-butadiene-based rubber with a core-shell structure and nitrile-butadiene-based rubber with a gel content of 15% or more, wherein a weight ratio of the styrene-butadiene-based rubber and the nitrile-butadiene-based rubber is 65:35 to 99:1, an anode mixture for a secondary battery, and an anode and a secondary battery including the same.

Abstract: A light emitting device for a display according to an exemplary embodiment includes a first LED stack, a second LED stack located under the first LED stack, and a third LED stack located under the second LED stack. The light emitting device further includes a first bonding layer, a second bonding layer, a first planarization layer, a second planarization layer, lower buried vias, and upper buried vias. The first planarization layer is recessed inwardly to expose an edge of the second LED stack.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: Provided is a negative electrode active material for a lithium secondary battery which includes: a silicon-silicon oxide-magnesium silicate composite comprising a silicon oxide (SiOx, 0<x?2) matrix; and silicon (Si) crystal grains, MgSiO3 crystal grains and Mg2SiO4 crystal grains present in the silicon oxide matrix, wherein the MgSiO3 crystal grains have a crystal size of 5-30 nm and the Mg2SiO4 crystal grains have a crystal size of 20-100 nm in the silicon-silicon oxide-magnesium silicate composite, and the content ratio of MgSiO3 crystal grains to Mg2SiO4 crystal grains is 2:1-1:1 on the weight basis. A method for preparing the negative electrode active material for a lithium secondary battery is also provided.

Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.

Abstract: A method for estimating information on a golf swing is provided. The method includes the steps of: specifying at least one analysis target posture from among a plurality of golf swing-related postures; detecting at least one of at least one joint of a user and a golf club using an artificial neural network model from a video of the user's golf swing captured by a video capture module, and providing the user with information on the user's analysis target posture estimated with reference to at least one of a position of the at least one joint and a position of the golf club; and controlling the video capture module to capture the video of the user's golf swing again after a predetermined time elapses from when the information on the analysis target posture is provided.

Abstract: A method for estimating information on a golf swing posture is provided. The method includes the steps of: adjusting a determination criterion for a golf swing of a user on the basis of information associated with the user's golf swing; and estimating information on a golf swing posture of the user on the basis of the adjusted determination criterion, wherein the information associated with the user's golf swing includes at least one of a photographed image of the user's golf swing and information on a swing posture of a comparison target golfer selected by the user.

Abstract: A method for displaying a graphic object on an image is provided. The method includes the steps of: acquiring, with respect to a first graphic object inputted by a user onto a first image of a person's posture, attribute information of the first graphic object that defines the first graphic object; deriving, on the basis of a feature point detected from each of the first image and a second image of a person's posture, a transformation model that defines a transformation relationship between the attribute information of the first graphic object and attribute information of a second graphic object to be displayed on the second image in correspondence to the first graphic object; and displaying, on the basis of the transformation model, the second graphic object at a position on the second image corresponding to a position of the first graphic object on the first image.

Abstract: A method for estimating information on a golf swing is provided. The method includes the steps of: when a photographed image of a user's golf swing is acquired, detecting at least one joint of the user from the photographed image using an artificial neural network model; comparing the user's golf swing and a golf swing of a comparison target with reference to a position of the at least one detected joint; and estimating information on the user's golf swing on the basis of a result of the comparison.

Abstract: A method for estimating information on a golf swing is provided. The method includes the steps of: estimating a three-dimensional position of at least one joint of a user, when two or more two-dimensional photographed images of the user's golf swing taken from different directions are acquired, by deriving probability information on a two-dimensional position of the at least one joint of the user from each of the two or more two-dimensional photographed images using an artificial neural network model, and combining the derived probability information on the two-dimensional position of the at least one joint; and estimating information on the user's golf swing with reference to the estimated three-dimensional position of the at least one joint.

Abstract: A method for estimating information on a golf swing is provided. The method includes the steps of: when a photographed image of a user's golf swing is acquired, detecting at least one joint of the user from the photographed image using an artificial neural network model; and estimating information on the user's golf swing with reference to a position of the at least one detected joint.

Abstract: A method of processing a medical image includes acquiring a three-dimensional (3D) medical image indicating a blood vessel and a two-dimensional (2D) medical image indicating the blood vessel, determining a blood vessel area in the 3D medical image corresponding to a partial area of the blood vessel in the 2D medical image, and matching the blood vessel area with the partial area in the 2D medical image.

Abstract: A method of processing a medical image includes acquiring a three-dimensional (3D) medical image indicating a blood vessel and a two-dimensional (2D) medical image indicating the blood vessel, determining a blood vessel area in the 3D medical image corresponding to a partial area of the blood vessel in the 2D medical image, and matching the blood vessel area with the partial area in the 2D medical image.

Abstract: Disclosed is a method for manufacturing a back side illumination image sensor. The method includes defining a pixel area by forming a first isolation area in a first substrate; forming a photo detecting unit buried in the pixel area; forming an ion implantation layer on the photo detecting unit; growing a second substrate on the first substrate having the ion implantation layer; forming a logic unit electrically connected to the first substrate on the second substrate; forming an insulting layer and an interconnection on the second substrate; and exposing the photo detecting unit by grinding a backside of the first substrate.

Abstract: Disclosed is a method for placing dummy patterns in a semiconductor device layout. More specifically, the method places the dummy patterns densely between main patterns in accordance with a sequence and configuration. The method includes placing vertical dummies having a greater length than width in a region other than main patterns to form a first layout, removing the vertical dummies within a first distance from the main patterns to form a second layout, placing horizontal dummies having a greater length than width in a vacant space of the second layout to form a third layout, and removing the horizontal dummies within a second distance from the main patterns in the third layout. The method prevents and/or inhibits pattern deformation.

Abstract: Disclosed are a non-volatile semiconductor memory device capable of simplifying the complicated structure of a transistor, and a fabrication method for the same.

Abstract: Disclosed is a method for manufacturing a back side illumination image sensor. The method includes defining a pixel area by forming a first isolation area in a first substrate; forming a photo detecting unit buried in the pixel area; forming an ion implantation layer on the photo detecting unit; growing a second substrate on the first substrate having the ion implantation layer; forming a logic unit electrically connected to the first substrate on the second substrate; forming an insulting layer and an interconnection on the second substrate; and exposing the photo detecting unit by grinding a backside of the first substrate.

Abstract: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device can include a semiconductor substrate including a trench, a first oxide layer in the trench, a second oxide layer filled in the trench to form an insulating layer, and a silicon nitride layer interposed between the first and second oxide layers. The silicon nitride layer can be etched such that the silicon nitride layer is recessed from top surfaces of the semiconductor substrate and the second oxide layer, thereby forming a divot at a top corner of the trench.

Abstract: Disclosed are a non-volatile semiconductor memory device capable of simplifying the complicated structure of a transistor, and a fabrication method for the same.

Abstract: A method for fabricating a MOS transistor is suitable for modifying the configuration of a gate electrode. The method includes coating a first oxide layer on a semiconductor substrate and removing a predetermined width of the first oxide layer; forming an LDD region in the substrate; forming a gate spacer on the substrate; forming a channel in the LDD region, forming a gate oxide layer; forming a polysilicon gate electrode; and forming source/drain diffusion regions. Accordingly, a line width of the gate electrode can be reduced without employing lithography of high precision, and an area reserved for salicide can be maximally secured on the gate and source/drain regions.