Abstract: A method of controlling a smart key, including a low frequency (LF) receiver receiving an LF signal from a vehicle, a radio frequency (RF) transmitter transmitting an RF signal to the vehicle in response to the LF signal, a sensor unit sensing a motion, and a micro control unit controlling operations of the LF receiver, the RF transmitter, and the sensor unit, includes receiving, by the LF receiver, the LF signal from the vehicle and controlling, by the micro control unit, a turn-on/off operation of each of the LF receiver, the RF transmitter, and the sensor unit on the basis of the received LF signal.

Abstract: A method of removing a direct current component at an output terminal of an MMC converter according to the present invention includes a detection step of individually detecting charging voltages charged in capacitors of a plurality of sub-modules connected in series to each other in the MMC converter; outputting an average value of the individually detected charging voltages; delaying the outputted average value by a predetermined phase to output a phase-delayed average value; outputting the average value and the phase-delayed average value as a q-axis component voltage by using a predetermined dq conversion unit; calculating an error between the q-axis component voltage and a three-phase average voltage for the q-axis component voltage; and outputting, through a pre-determined first PI control unit, an offset voltage for reducing the error.

Abstract: A vertical field effect transistor (VFET) including a first source/drain region, a channel structure upwardly protruding from the first source/drain region and configured to serve as a channel, the channel structure having a two-dimensional structure in a plan view, the channel structure having an opening at at least one side thereof, the channel structure including one or two first portions and one or more second portions, the one or two first portion extending in a first direction, and the one or more second portions connected to corresponding one or more of the one or more first portions and extending in a second direction, the second direction being different from the first direction, a gate structure horizontally surrounding the channel structure, and a second source/drain region upwardly on the channel structure may be provided.

Abstract: Vertical field-effect transistor (VFET) devices and methods of forming the devices are provided. The methods may include forming a channel region including a first channel region and a second channel region, forming a first cavity in the substrate, forming a first bottom source/drain in the first cavity, forming a second cavity in the substrate, and forming a second bottom source/drain in the second cavity. The first cavity may expose a lower surface of the first channel region, and the second cavity may expose a lower surface of the second channel region. The method may also include after forming the first bottom source/drain and the second bottom source/drain, removing a portion of the channel region between the first channel region and the second channel region to separate the first channel region from the second channel region.

Abstract: A vertical tunnel field effect transistor (VTFET) including a fin structure protruding from a substrate including a source/drain region, an epitaxially-grown source/drain structure on the fin structure, a cap including pillar portions, the pillar portions covering side surfaces of the epitaxially-grown source/drain structure and partially covering side surfaces of a top portion of the fin structure, a gate insulator covering remaining portions of the side surfaces of the fin structure under the pillar portions of the cap, a work function metal gate on the gate insulator, and a separation pattern surrounding a bottom portion of a fin structure such that the work function metal gate is vertically between the cap and the separation pattern, the separation pattern electrically isolating the work function metal gate from the source/drain region, and a method of manufacturing the same may be provided.

Abstract: Proposed is a power supply device for a submodule controller of a modular multilevel converter (MMC) connected to a high voltage direct current (HVDC) system, which generates and supplies power through by hydraulic turbine generation using coolant flowing through a heat sink that cools a submodule. The power supply device includes a heat sink disposed inside the submodule of the MMC converter to cool the submodule using coolant; a pipe having an inlet configured to supply the coolant to the heat sink and an outlet configured to discharge the coolant to outside of the heat sink and configured to form a flow path to cause the coolant supplied through the inlet to flow to the heat sink; and a hydraulic turbine generator disposed at one side of the pipe to generate power by the coolant flowing through the pipe and supply the power to the submodule controller.

Abstract: A method of controlling a smart key, including a low frequency (LF) receiver receiving an LF signal from a vehicle, a radio frequency (RF) transmitter transmitting an RF signal to the vehicle in response to the LF signal, a sensor unit sensing a motion, and a micro control unit controlling operations of the LF receiver, the RF transmitter, and the sensor unit, includes receiving, by the LF receiver, the LF signal from the vehicle and controlling, by the micro control unit, a turn-on/off operation of each of the LF receiver, the RF transmitter, and the sensor unit on the basis of the received LF signal.

Abstract: Vertical field-effect transistor (VFET) devices and methods of forming the devices are provided. The methods may include forming a channel region including a first channel region and a second channel region, forming a first cavity in the substrate, forming a first bottom source/drain in the first cavity, forming a second cavity in the substrate, and forming a second bottom source/drain in the second cavity. The first cavity may expose a lower surface of the first channel region, and the second cavity may expose a lower surface of the second channel region. The method may also include after forming the first bottom source/drain and the second bottom source/drain, removing a portion of the channel region between the first channel region and the second channel region to separate the first channel region from the second channel region.

Abstract: VFET devices are provided. A VFET device includes a substrate including first and second protruding portions. The VFET device includes an isolation region between the first and second protruding portions. The VFET device includes first and second silicide regions on the first and second protruding portions, respectively. Moreover, the VFET device includes a contact on the first and second silicide regions. Related methods of forming a VFET device are also provided.

Abstract: A vertical field effect transistor (VFET) including a first source/drain region, a channel structure upwardly protruding from the first source/drain region and configured to serve as a channel, the channel structure having a two-dimensional structure in a plan view, the channel structure having an opening at at least one side thereof, the channel structure including one or two first portions and one or more second portions, the one or two first portion extending in a first direction, and the one or more second portions connected to corresponding one or more of the one or more first portions and extending in a second direction, the second direction being different from the first direction, a gate structure horizontally surrounding the channel structure, and a second source/drain region upwardly on the channel structure may be provided.

Abstract: A vertical bipolar transistor including a substrate including a first well of a first conductivity type and a second well of a second conductivity type different from the first conductivity type, the first well adjoining the second well, a first fin extending, from the first well, a second fin extending from the first well, a third fin extending from the second well, a first conductive region on the first fin, having the second conductivity type and configured to serve as an emitter of the vertical bipolar transistor, a second conductive region on the second fin, having the first conductivity type, and configured to serve as a base of the vertical bipolar transistor, and a third conductive region on the third fin, having the second conductivity type, and configured to serve as a collector of the vertical bipolar transistor may be provided.

Abstract: A vertical field effect transistor (VFET) including a first source/drain region, a channel structure upwardly protruding from the first source/drain region and configured to serve as a channel, the channel structure having a two-dimensional structure in a plan view, the channel structure having an opening at at least one side thereof, the channel structure including one or two first portions and one or more second portions, the one or two first portion extending in a first direction, and the one or more second portions connected to corresponding one or more of the one or more first portions and extending in a second direction, the second direction being different from the first direction, a gate structure horizontally surrounding the channel structure, and a second source/drain region upwardly on the channel structure may be provided.

Abstract: A multi-optic vision device includes a dark-vision lighting apparatus illuminating a defect on a subject and leaving regions that surround the defect dark. A bright-vision lighting apparatus illuminates the subject and the regions that surround the defect and leaving the defect dark. A differential-vision lighting apparatus illuminates the subject so as to stereoscopically show the defect on the subject. An area scan camera continuously imaging the subject as the dark-vision lighting apparatus, the bright-vision lighting apparatus, and the differential-vision lighting apparatus simultaneously and respectively provide light. A controller processes the image to respectively obtain a dark-vision image, a bright-vision image, and a differential-vision image of the subject.

Abstract: Vertical field-effect transistor (VFET) devices and methods of forming the devices are provided. The methods may include forming a channel region including a first channel region and a second channel region, forming a first cavity in the substrate, forming a first bottom source/drain in the first cavity, forming a second cavity in the substrate, and forming a second bottom source/drain in the second cavity. The first cavity may expose a lower surface of the first channel region, and the second cavity may expose a lower surface of the second channel region. The method may also include after forming the first bottom source/drain and the second bottom source/drain, removing a portion of the channel region between the first channel region and the second channel region to separate the first channel region from the second channel region.

Abstract: A power supply for a submodule controller of an MMC converter, which supplies driving power to a submodule controller of an MMC connected to an HVDC system. The power supply includes: a bridge circuit unit including an energy storage unit storing a DC voltage of a series-connected submodule of the MMC converter, and multiple power semiconductor devices connected in parallel to the energy storage unit in a bridge form; a first resistor unit connected in parallel to the energy storage unit, and configured with at least one series-connected resistor; a second resistor unit connected in series to the first resistor unit; a switch unit connected in parallel to the first resistor unit; and a DC/DC converter converting a voltage output from output terminals formed in both ends of the second resistor unit into a low voltage, and supplying the same to the submodule controller.

Abstract: VFET devices are provided. A VFET device includes a substrate including first and second protruding portions. The VFET device includes an isolation region between the first and second protruding portions. The VFET device includes first and second silicide regions on the first and second protruding portions, respectively. Moreover, the VFET device includes a contact on the first and second silicide regions. Related methods of forming a VFET device are also provided.

Abstract: The present invention provides a method of MMC for HVDC. According to the present invention, there is provided a redundancy control method of an MMC for HVDC, wherein the MMC includes multiple converter arms each has multiple submodules in operation and redundancy modules for spares, the method including: checking whether a breakdown of a submodule in operation of a first converter arm among the multiple converter arms occurs in a case where the all redundancy modules of the first converter arm are applied in operation; and lowering an output voltage of each submodule of other converter arms in such a manner that a DC link voltage of each of the other converter arms is controlled to be equal to a DC link voltage of the first converter arm when the breakdown of the submodule of the first converter arm occurs.

Abstract: Provided herein is an audio processing apparatus including: a controller configured to determine an initialization mode for processing video and audio signals provided from an audio provision apparatus of among a plurality of initialization modes, and to perform an initialization process differently according to the result of determination; and an audio processor configured to process the audio signal and output the processed audio signal, when the initialization process is performed.

Abstract: High efficiency seawater evaporation apparatus comprises showering unit installed at the saltpan; and evaporation rope module wherein multiple evaporation ropes are collected in group by the holder and the respective evaporation modules are extended along the upper and lower direction in the state each other separated in a predetermined interval and wherein, when the seawater is supplied to the respective evaporation ropes by the showering unit, the seawater may flow down along the surface of the respective evaporation ropes and the evaporation of the seawater may be accelerated.

Abstract: Provided a salt production automation system utilizing three-dimensionally structured evaporation fields. The salt production automation system utilizing three-dimensionally structured evaporation fields includes: evaporation fields which have collection pools (SWT) and are installed in at least two separate places; a plurality of evaporation members which are three-dimensionally arranged in the evaporation fields to make seawater flow downwards; and a seawater supply unit which supplies seawater to the evaporation members so that seawater can flow downwards from the evaporation members, wherein among the evaporation fields, the number of evaporation members gradually decreases from the first stage evaporation field to the final stage evaporation field.