Patents by Inventor Yong-Ho Jeon

Yong-Ho Jeon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10352580
    Abstract: An air conditioner includes a housing having a suction port and a discharge port, a main fan configured to draw air into the housing through the suction port and discharge air from the housing through the discharge port, an auxiliary fan configured to draw, into the housing, air discharged by the main fan and a controller configured to control a rotational speed of the auxiliary fan to change a direction in which air is discharged from the housing.
    Type: Grant
    Filed: May 3, 2016
    Date of Patent: July 16, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-Jin Kim, Ju-Hyun Kang, Young-Jae Kim, Byung Yul So, Yong-Gak Kim, In-Jung Baek, Na Yeong Byeon, Moo Gyo Seo, Hyeong Joon Seo, Seung Cheon Yu, Sang Woo Lee, Hyo Kyu Lee, Jin Ho Lim, Min-Gi Cho, Hyeong Kyu Cho, Jun Hwang, Do Yeon Kim, Hyun Ah Kim, Yong Ho Seo, Woo Seog Song, Hyun-Joo Song, Young Sun Shin, Joon-Ho Yoon, Bu Youn Lee, Jung Dae Lee, Chang Seon Lee, Min Gu Jeon, Hee Jae Jeong
  • Publication number: 20190169176
    Abstract: The present invention relates to a novel amine-based compound represented by Chemical Formula 1 and an organic light emitting device including the same. The compound provides improved efficiency, low driving voltage, and improved lifetime characteristic of the organic light emitting device.
    Type: Application
    Filed: December 21, 2017
    Publication date: June 6, 2019
    Inventors: Yong Bum CHA, Sang Young JEON, Yeon Ho CHO, Yeon Hwan KIM
  • Publication number: 20190157147
    Abstract: A semiconductor device includes an active pattern, a gate electrode, a gate capping pattern, and a gate spacer. The active pattern extends in a first direction parallel to a top surface of the substrate. The gate electrode extends in a second direction parallel to the top surface of the substrate and intersects the active pattern. The gate capping pattern covers a top surface of the gate electrode and extends in a direction crossing the top surface of the substrate to cover a first sidewall of the gate electrode. The gate spacer covers a second sidewall of the gate electrode. The first sidewall and the second sidewall are opposite to each other in the second direction.
    Type: Application
    Filed: January 2, 2019
    Publication date: May 23, 2019
    Inventors: Sungwoo MYUNG, GeumJung SEONG, Jisoo OH, JinWook LEE, Dohyoung KIM, Yong-Ho JEON
  • Publication number: 20190142426
    Abstract: The clipping device includes a connecting portion which is moved while being connected to a wire of the endoscope and has a body broken when tension more than a set value is applied thereto, a body portion which includes a first inside path portion through which the connecting portion moves and has a magnetic force, a cap portion which is located on a side of the body portion, includes a second inside path portion connected to the first inside path portion, and guides movement of the connecting portion, a clipping portion which is connected to the connecting portion protruding through the cap portion and contracts due to movement of the connecting portion to grip body tissue, and a connector which connects the body portion to the cap portion and includes a material biodegradable in a human body.
    Type: Application
    Filed: November 9, 2018
    Publication date: May 16, 2019
    Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Moon Gu LEE, Yong Ho JEON, Byung Kyu KIM, Chang Ho JUNG, Chan Joong KIM
  • Patent number: 10256318
    Abstract: A method of manufacturing a semiconductor device includes forming dummy gate structures including a dummy gate insulating layer and dummy gate electrodes, on a first region of a semiconductor substrate, the first region including a patterning region, forming spacers on two side walls of each of the dummy gate structures, forming an interlayer insulating layer on the semiconductor substrate and the dummy gate structures, forming a protective insulating layer on a second region of the semiconductor substrate, the second region including a non-patterning region, forming a liner layer on the protective insulating layer, planarizing the interlayer insulating layer by using the liner layer as an etching mask to expose top surfaces of the dummy gate structures, forming openings by removing the dummy gate structures to expose the semiconductor substrate between the spacers, and forming gate structures including a gate insulating layer and metal gate electrodes, in the openings.
    Type: Grant
    Filed: January 12, 2017
    Date of Patent: April 9, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-ho Jeon, Dae-hyun Jang, Seung-seok Ha, Young-ju Park, Sun-ki Min
  • Patent number: 10186457
    Abstract: A semiconductor device includes an active pattern, a gate electrode, a gate capping pattern, and a gate spacer. The active pattern extends in a first direction parallel to a top surface of the substrate. The gate electrode extends in a second direction parallel to the top surface of the substrate and intersects the active pattern. The gate capping pattern covers a top surface of the gate electrode and extends in a direction crossing the top surface of the substrate to cover a first sidewall of the gate electrode. The gate spacer covers a second sidewall of the gate electrode. The first sidewall and the second sidewall are opposite to each other in the second direction.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: January 22, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sungwoo Myung, GeumJung Seong, Jisoo Oh, JinWook Lee, Dohyoung Kim, Yong-Ho Jeon
  • Patent number: 10172605
    Abstract: The present subject matter relates to a surgical retractor. The surgical retractor includes: a movable body part which is inserted into a body; a hook part which is connected with the movable body part inside the body and pulls out an object that is inside of the body; and an operating part for operating, from the outside of the body, the movement of the movable body part inside the body.
    Type: Grant
    Filed: June 17, 2013
    Date of Patent: January 8, 2019
    Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Kil Yeon Lee, Moon Gu Lee, Yong Ho Jeon, Chan Woo Lee
  • Publication number: 20180374859
    Abstract: Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.
    Type: Application
    Filed: August 29, 2018
    Publication date: December 27, 2018
    Inventors: Sang-Jine Park, Kee-Sang Kwon, Do-Hyoung Kim, Bo-Un Yoon, Keun-Hee Bai, Kwang-Yong Yang, Kyoung-Hwan Yeo, Yong-Ho Jeon
  • Patent number: 10096605
    Abstract: Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: October 9, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Jine Park, Kee-Sang Kwon, Do-Hyoung Kim, Bo-Un Yoon, Keun-Hee Bai, Kwang-Yong Yang, Kyoung-Hwan Yeo, Yong-Ho Jeon
  • Patent number: 10058316
    Abstract: A surgical traction apparatus according to the present invention includes a moving body portion including a magnetic body and configured to be inserted into a body, a hook portion configured to be connected to the moving body portion inside the body and pull an object inside the body, an operating portion configured to operate the moving body portion to move inside the body while moving outside the body, and a magnet portion configured to be mounted on the operating portion and be with adjustable magnetic strength.
    Type: Grant
    Filed: May 14, 2015
    Date of Patent: August 28, 2018
    Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Moon Gu Lee, Yong Ho Jeon, Kil Yeon Lee, Jae Seung Kim
  • Patent number: 10043889
    Abstract: The inventive concept relates to a semiconductor device and a method for fabricating the same. The semiconductor device comprises active patterns protruding from a substrate, an interlayer dielectric layer disposed on the substrate and including grooves exposing the active patterns, and gate electrodes in the grooves. The grooves include a first groove having a first width and a second groove having a second width greater than the first width. The gate electrodes include a first gate electrode in the first groove, and a second gate electrode in the second groove. Each of the first and second gate electrodes includes a first work function conductive pattern on a bottom surface and sidewalls of corresponding one of the first and second grooves, and a second work function conductive pattern on the first work function conductive pattern.
    Type: Grant
    Filed: October 3, 2017
    Date of Patent: August 7, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: GeumJung Seong, JinWook Lee, Dohyoung Kim, Sungwoo Myung, Jisoo Oh, Yong-Ho Jeon
  • Patent number: 9984925
    Abstract: A semiconductor device, including a first fin-type pattern; a first gate spacer on the first fin-type pattern, intersecting the first fin-type pattern, and including an upper portion and a lower portion; a second gate spacer on the first fin-type pattern, intersecting the first fin-type pattern, and being spaced apart from the first gate spacer; a first trench defined by the first gate spacer and the second gate spacer; a first gate electrode partially filling the first trench; a first capping pattern on the first gate electrode and filling the first trench; and an interlayer insulating layer covering an upper surface of the capping pattern, a width of the upper portion of the first gate spacer decreasing as a distance from an upper surface of the first fin-type pattern increases, and an outer sidewall of the upper portion of the first gate spacer contacting the interlayer insulating layer.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: May 29, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong-Ho Jeon, Sang-Su Kim, Cheol Kim, Yong-Suk Tak, Myung-Geun Song, Gi-Gwan Park
  • Patent number: 9947672
    Abstract: Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.
    Type: Grant
    Filed: December 7, 2016
    Date of Patent: April 17, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Jine Park, Kee-Sang Kwon, Do-Hyoung Kim, Bo-Un Yoon, Keun-Hee Bai, Kwang-Yong Yang, Kyoung-Hwan Yeo, Yong-Ho Jeon
  • Publication number: 20180061958
    Abstract: A semiconductor device includes an active pattern, a gate electrode, a gate capping pattern, and a gate spacer. The active pattern extends in a first direction parallel to a top surface of the substrate. The gate electrode extends in a second direction parallel to the top surface of the substrate and intersects the active pattern. The gate capping pattern covers a top surface of the gate electrode and extends in a direction crossing the top surface of the substrate to cover a first sidewall of the gate electrode. The gate spacer covers a second sidewall of the gate electrode. The first sidewall and the second sidewall are opposite to each other in the second direction.
    Type: Application
    Filed: October 26, 2017
    Publication date: March 1, 2018
    Inventors: Sungwoo MYUNG, GeumJung SEONG, Jisoo OH, JinWook LEE, Dohyoung KIM, Yong-Ho JEON
  • Publication number: 20180033867
    Abstract: The inventive concept relates to a semiconductor device and a method for fabricating the same. The semiconductor device comprises active patterns protruding from a substrate, an interlayer dielectric layer disposed on the substrate and including grooves exposing the active patterns, and gate electrodes in the grooves. The grooves include a first groove having a first width and a second groove having a second width greater than the first width. The gate electrodes include a first gate electrode in the first groove, and a second gate electrode in the second groove. Each of the first and second gate electrodes includes a first work function conductive pattern on a bottom surface and sidewalls of corresponding one of the first and second grooves, and a second work function conductive pattern on the first work function conductive pattern.
    Type: Application
    Filed: October 3, 2017
    Publication date: February 1, 2018
    Inventors: GeumJung SEONG, JinWook LEE, Dohyoung KIM, Sungwoo MYUNG, Jisoo OH, Yong-Ho JEON
  • Publication number: 20170345825
    Abstract: Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.
    Type: Application
    Filed: August 18, 2017
    Publication date: November 30, 2017
    Inventors: Sang-Jine Park, Kee-Sang Kwon, Do-Hyoung Kim, Bo-Un Yoon, Keun-Hee Bai, Kwang-Yong Yang, Kyoung-Hwan Yeo, Yong-Ho Jeon
  • Patent number: 9806168
    Abstract: The inventive concept relates to a semiconductor device and a method for fabricating the same. The semiconductor device comprises active patterns protruding from a substrate, an interlayer dielectric layer disposed on the substrate and including grooves exposing the active patterns, and gate electrodes in the grooves. The grooves include a first groove having a first width and a second groove having a second width greater than the first width. The gate electrodes include a first gate electrode in the first groove, and a second gate electrode in the second groove. Each of the first and second gate electrodes includes a first work function conductive pattern on a bottom surface and sidewalls of corresponding one of the first and second grooves, and a second work function conductive pattern on the first work function conductive pattern.
    Type: Grant
    Filed: January 6, 2016
    Date of Patent: October 31, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: GeumJung Seong, JinWook Lee, Dohyoung Kim, Sungwoo Myung, Jisoo Oh, Yong-Ho Jeon
  • Patent number: 9806166
    Abstract: A semiconductor device includes an active pattern, a gate electrode, a gate capping pattern, and a gate spacer. The active pattern extends in a first direction parallel to a top surface of the substrate. The gate electrode extends in a second direction parallel to the top surface of the substrate and intersects the active pattern. The gate capping pattern covers a top surface of the gate electrode and extends in a direction crossing the top surface of the substrate to cover a first sidewall of the gate electrode. The gate spacer covers a second sidewall of the gate electrode. The first sidewall and the second sidewall are opposite to each other in the second direction.
    Type: Grant
    Filed: January 9, 2017
    Date of Patent: October 31, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sungwoo Myung, GeumJung Seong, Jisoo Oh, JinWook Lee, Dohyoung Kim, Yong-Ho Jeon
  • Publication number: 20170309724
    Abstract: A method of manufacturing a semiconductor device includes forming dummy gate structures including a dummy gate insulating layer and dummy gate electrodes, on a first region of a semiconductor substrate, the first region including a patterning region, forming spacers on two side walls of each of the dummy gate structures, forming an interlayer insulating layer on the semiconductor substrate and the dummy gate structures, forming a protective insulating layer on a second region of the semiconductor substrate, the second region including a non-patterning region, forming a liner layer on the protective insulating layer, planarizing the interlayer insulating layer by using the liner layer as an etching mask to expose top surfaces of the dummy gate structures, forming openings by removing the dummy gate structures to expose the semiconductor substrate between the spacers, and forming gate structures including a gate insulating layer and metal gate electrodes, in the openings.
    Type: Application
    Filed: January 12, 2017
    Publication date: October 26, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yong-ho JEON, Dae-hyun JANG, Seung-seok HA, Young-ju Park, Sun-ki Min
  • Publication number: 20170258301
    Abstract: A towing device for endoscopy including a connecting portion connected to a wire of an endoscope to be moved, wherein a body of the connecting portion is broken when a set amount of tension or more is applied to the connecting portion; a guide portion including an inner path through which the connecting portion moves; a clip portion positioned at an opposite direction of the wire with respect to the guide portion and hooked by the connecting portion to be closed and grip body tissues; and an extension portion configured to move together with the guide portion and having a magnetic force.
    Type: Application
    Filed: March 10, 2017
    Publication date: September 14, 2017
    Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Moon Gu LEE, Chang Ho JUNG, Yong Ho JEON, Yun Ho JUNG