Abstract: Methods of forming patterns in semiconductor devices are provided including forming first patterns spaced apart from one another on an object structure. A first sacrificial layer is formed conformally on the first patterns and the object structure. A second pattern is formed on a sidewall of the first sacrificial layer, the second pattern having a height smaller than that of the first pattern from an upper surface of the object structure. The first patterns are selectively removed to form an opening that exposes the object structure. A third pattern is formed on a sidewall of the opening.

Abstract: A semiconductor device includes a device isolation layer defining a plurality of active regions of a semiconductor substrate, floating gates and a control gate electrode in which the lowermost part of the electrode is constituted by a metal layer. The control gate electrode crosses over the active regions. The floating gates are disposed between the control gate electrode and the active regions. The tops of the floating gates are disposed at a level above the level of the top of the device isolation layer such that a gap is defined between adjacent ones of the floating gates. A region of the gap is filled with the metal layer of the control gate electrode.

Abstract: A method of controlling a cooking apparatus which includes a main body having at least one heating unit, a control panel installed on the main body, and a temperature display unit that is provided on the control panel, displaying a temperature of the heating unit through change in color, and having a plurality of light emitting elements, includes determining whether or not the heating unit is in operation; detecting a current temperature of the heating unit when the heating unit is in operation; and displaying a temperature section, to which the detected current temperature of the heating unit belongs, among a plurality of preset temperature sections through the change in the color of the temperature display unit.

Abstract: Methods of forming patterns in semiconductor devices are provided including forming first patterns spaced apart from one another on an object structure. A first sacrificial layer is formed conformally on the first patterns and the object structure. A second pattern is formed on a sidewall of the first sacrificial layer, the second pattern having a height smaller than that of the first pattern from an upper surface of the object structure. The first patterns are selectively removed to form an opening that exposes the object structure. A third pattern is formed on a sidewall of the opening.

Abstract: Provided is a method of manufacturing a semiconductor device using double patterning. The method includes: forming a first material layer pattern having recesses in a first direction on an object layer and a second material layer pattern formed on the first material layer pattern; selectively etching the second material layer pattern and the first material layer pattern in a direction perpendicular to the first direction to form an etching mask; and etching the object layer to form minute patterns.

Abstract: A memory device includes a memory cell that includes a storage node, a first electrode, and a second electrode, the storage node stores an electrical charge, and the first electrode moves to connect to the storage node when the second electrode is energized.

Abstract: A method of manufacturing a semiconductor device having buried gates may include forming a stacked structure of sequentially stacked first mask patterns and second mask patterns with equal widths to expose active regions and isolation regions of a semiconductor substrate. After forming reduced first mask patterns by decreasing the width only of the first mask patterns, trenches may be formed in the active regions and the isolation regions by etching the exposed portions of the semiconductor substrate using the second mask patterns as an etch mask. Then, gate insulating films may be formed on inner walls of the trenches in the active regions, and a conductive material may be buried into the trenches in the active regions and the isolation regions to form gates.

Abstract: A double pattern method of forming a plurality of contact holes in a material layer formed on a substrate is disclosed. The method forms a parallel plurality of first hard mask patterns separated by a first pitch in a first direction on the material layer, a self-aligned parallel plurality of second hard mask patterns interleaved with the first hard mask patterns and separated from the first hard mask patterns by a buffer layer to form composite mask patterns, and a plurality of upper mask patterns in a second direction intersecting the first direction to mask selected portions of the buffer layer in conjunction with the composite mask patterns. The method then etches non-selected portions of the buffer layer using the composite hard mask patterns and the upper mask patterns as an etch mask to form a plurality of hard mask holes exposing selected portions of the material layer, and then etches the selected portions of the material layer to form the plurality of contact holes.

Abstract: A cooking apparatus and a method of controlling steam cleaning thereof realize optimal cleaning performance by maintaining an internal temperature of a cooking chamber at a temperature suitable for steam condensation at the time of cleaning the inside of the cooking chamber using steam. The cooking apparatus includes a cooking chamber, a steam supplying unit to supply steam into the cooking chamber, a temperature sensing unit to sense an internal temperature of the cooking chamber, and a control unit to compare the sensed internal temperature with a reference temperature and operate the steam supplying unit if the internal temperature of the cooking chamber is less than the reference temperature.

Abstract: A metal panel, a manufacturing method thereof and a cooking device using the metal panel capable of improving an external appearance of edges, enhancing efficiency of a manufacturing process and reducing the manufacturing cost. The manufacturing method of a metal panel includes cutting a metal plate to form a cutaway portion at a specified area of a border, bending the border on opposite sides of the cutaway portion, and coupling a bracket to a cutaway groove formed at the border by the bending.

Abstract: A cooking apparatus and a method of controlling the same utilize the operations of measuring a temperature of a cooking chamber, and periodically turning on and off a convection fan, which circulates air in the cooking chamber, when the temperature of the cooking chamber reaches a target temperature.

Abstract: Provided is a method of manufacturing a semiconductor device using double patterning. The method includes: forming a first material layer pattern having recesses in a first direction on an object layer and a second material layer pattern formed on the first material layer pattern; selectively etching the second material layer pattern and the first material layer pattern in a direction perpendicular to the first direction to form an etching mask; and etching the object layer to form minute patterns.

Abstract: In a semiconductor device including a transistor having an embedded gate, and methods of manufacturing the same, a substrate is divided into first and second regions. A gate trench is formed in the first region, a first gate structure partially fills the gate trench and a passivation layer pattern is provided inside the gate trench and positioned on the first gate structure. A first source/drain is provided adjacent to sidewalls of the first gate structure. A second gate structure is provided in the second region and has a silicon oxide layer, a conductive layer pattern and a metal silicide layer pattern stacked on the conductive layer pattern. A second source/drain is provided adjacent to sidewalls of the second gate structure. Defects due to formation of reactants may be reduced in a formation process of the above-described semiconductor device, improving reliability and operating characteristics.

Abstract: A method of manufacturing a semiconductor device having buried gates may include forming a stacked structure of sequentially stacked first mask patterns and second mask patterns with equal widths to expose active regions and isolation regions of a semiconductor substrate. After forming reduced first mask patterns by decreasing the width only of the first mask patterns, trenches may be formed in the active regions and the isolation regions by etching the exposed portions of the semiconductor substrate using the second mask patterns as an etch mask. Then, gate insulating films may be formed on inner walls of the trenches in the active regions, and a conductive material may be buried into the trenches in the active regions and the isolation regions to form gates.

Abstract: A double pattern method of forming a plurality of contact holes in a material layer formed on a substrate is disclosed. The method forms a parallel plurality of first hard mask patterns separated by a first pitch in a first direction on the material layer, a self-aligned parallel plurality of second hard mask patterns interleaved with the first hard mask patterns and separated from the first hard mask patterns by a buffer layer to form composite mask patterns, and a plurality of upper mask patterns in a second direction intersecting the first direction to mask selected portions of the buffer layer in conjunction with the composite mask patterns. The method then etches non-selected portions of the buffer layer using the composite hard mask patterns and the upper mask patterns as an etch mask to form a plurality of hard mask holes exposing selected portions of the material layer, and then etches the selected portions of the material layer to form the plurality of contact holes.

Abstract: A method of forming a semiconductor device is provided. The method includes preparing a semiconductor substrate to include a cell region and a peripheral region and forming a first mask layer on the semiconductor substrate. First hard mask patterns that are configured to expose the first mask layer are formed on the first mask layer in the cell region. A second mask layer that is configured to conformably cover the first hard mask patterns is formed. A second hard mask pattern is formed between the first hard mask patterns, wherein the second hard mask pattern is configured to contact a lateral surface of the second mask layer. The second mask layer interposed between the first hard mask patterns and the second hard mask pattern is removed. A plurality of trenches are etched in the semiconductor substrate of the cell region using the first hard mask patterns and the second hard mask pattern as a mask.

Abstract: A bread maker comprising: a main body; an oven having a surface coated with a ceramic material, and being accommodated in the main body; a door provided in a front of the main body to open and close the oven; and upper heaters and lower heaters respectively disposed in upper and lower parts of the oven and the door. The oven is coated with a ceramic material so that an inner surface of the oven does not become deformed due to a high temperatures, and so that an inner surface of the oven that is stained or coated with bread ingredients can be easily cleaned. The upper heaters are inclined downward, thereby enhancing heating efficiency. Further, the oven components are detachable so that a damaged part of the oven can be separately replaced.

Abstract: Provided is a heating cooker which allows a door on a cooking chamber to be opened without direct handling of the door by a user. The heating cooker includes a body having a cooking chamber defined therein, a door hingably mounted to the body to open and close the cooking chamber, a door holder positioned in the body to hold the door and keep the cooking chamber closed by the door, and a hinge part connected between the door and the body to guide rotation of the door such that when the door is released from the door holder, the door is automatically opened.

Abstract: Disclosed are a cooking apparatus and a method of controlling the same, which are capable of easily recognizing change in temperature of one of an oven and a cooktop through change in color corresponding to the temperature change at a position remote from the cooking apparatus, and which are capable of easily recognizing the temperature of the cooktop through a temperature display unit at a position that is somewhat lower than the cooktop by installing a temperature display unit at a position higher than the cooktop. To this end, the cooking apparatus includes a main body having at least one heating unit, a control panel installed on an upper surface of the main body, and a temperature display unit that is provided on the control panel, which displays a temperature of the heating unit through change in color.

Abstract: Provided is a heating cooker which includes a body constituting an appearance thereof, an upper panel on which a cooking container is laid, a heater positioned under the upper panel to heat the cooking container laid on the upper panel, a fan housing liftably positioned at one side of the body to be raised above the upper panel and having an air intake port and an air discharge port, a blast fan and a fan motor positioned in the fan housing to forcibly blow air toward a surface of the upper panel, a fan housing lifter to raise and lower the fan housing, a temperature sensor to detect the temperature of the upper panel, and a controller to control the heater, the fan motor, and the fan housing lifter. The upper panel heated by the heater can be forcibly cooled by air from the fan housing.