Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.

Abstract: A battery pack including at least one battery cell; a pack case configured to accommodate the battery cell and having a cooling hole formed therethrough; a flow meter provided at an outer side of the pack case and disposed adjacent to the cooling hole; and an opening and closing unit configured to open or close the cooling hole according to a temperature change inside the pack case.

Abstract: An energy storage device includes: a battery rack fixedly installed in a building or a container and having a partitioned space; and a plurality of battery modules installed in the partitioned space of the battery rack, wherein each of the plurality of battery modules is inserted into the battery rack in a sliding manner, wherein a front surface of each of the plurality of battery modules is fixed to the battery rack with a bolt, and wherein a rear surface of each of the plurality of battery modules is fixed to the battery rack with a hook.

Abstract: A board to board connector may include: a first shell coupled to a first board, and including a protruding extension part extended upward in a longitudinal direction and having one end protruding in a radial direction; and a second shell including an elastic rotating part extended downward in the longitudinal direction toward between a cover part and the protruding extension part, and having one end protruding in the radial direction so as to be engaged with and fixed to the protruding extension part. The elastic rotating part may be spaced apart from the cover part, made of an elastic material, and rotatable from side to side in a movement space formed between the elastic rotating part and the cover part.

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a magnetic layer on the light-emitting structure. The magnetic layer may have at least one magnetization direction that is parallel to an upper surface of the active layer. The magnetic layer may generate a magnetic field that is parallel to the upper surface of the active layer. The magnetic layer may include multiple structures that may have different magnetization directions. Multiple magnetic layers may be included on the light-emitting structure. A magnetic layer may be on a contact electrode. A magnetic layer may be isolated from a pad electrode.

Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.

Abstract: A semiconductor light emitting device includes a first light emitting portion including a first semiconductor stack, as well as a first lower dispersion Bragg reflector (DBR) layer and a first upper dispersion Bragg reflector (DBR) layer, disposed above and below the first semiconductor stack, a second light emitting portion including a second semiconductor stack, as well as a second lower dispersion Bragg reflector (DBR) layer and a second upper dispersion Bragg reflector (DBR) layer, disposed above and below the second semiconductor stack, a third light emitting portion including a third semiconductor stack, as well as a third lower dispersion Bragg reflector (DBR) layer and a third upper dispersion Bragg reflector (DBR) layer, disposed above and below the third semiconductor stack, a first bonding layer disposed between the first light emitting portion and the second light emitting portion, and a second bonding layer disposed between the second light emitting portion and the third light emitting portion.

Abstract: A battery module includes a cell stack having pouch-type battery cells provided to stand side by side and stacked in a horizontal direction, and a module housing configured to accommodate the cell stack. The module housing includes a lower plate provided in a rectangular plate form to support the cell stack at a lower portion of the cell stack; and a first left pressing plate and a first right pressing plate having elasticity and extending upwards at both side edge regions of the lower plate, which are provided side by side, to form an acute angle with respect to a vertically upper direction so that a gap between the first left pressing plate and the first right pressing plate becomes narrowed upwards. The first left pressing plate and the first right pressing plate are elastically biased to press both side surfaces of the cell stack.

Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

Abstract: A chip mounting method includes providing a first substrate including a light transmissive substrate having first and second surfaces, a sacrificial layer provided on the first surface, and a plurality of chips bonded to the sacrificial layer, obtaining first mapping data by testing the chips, the first mapping data defining coordinates of normal chips and defective chips among the chips, disposing a second substrate below the first surface, disposing the normal chips on the second substrate by radiating a first laser beam to positions of the sacrificial layer corresponding to the coordinates of the normal chips, based on the first mapping data, to remove portions of the sacrificial layer thereby separating the normal chips from the light transmissive substrate, and mounting the normal chips on the second substrate by radiating a second laser beam to a solder layer of the second substrate.

Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other.

Abstract: A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.

Abstract: A light emitting device package includes a first wavelength conversion portion and a second wavelength conversion portion to provide a wavelength of incident light to provide light having a converted wavelength, a light-transmissive partition structure extending along side surfaces of the first and second wavelength conversion portions along a thickness direction to separate the first and second wavelength conversion portions part from each other along a direction crossing the thickness direction, and a cell array including a first light emitting device, a second light emitting device and a third light emitting device, overlapping the first wavelength conversion portion, the second wavelength conversion portion and the light-transmissive partition structure, respectively, along the thickness direction.

Abstract: A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substra

Abstract: A receptacle connector capable of preventing a damage caused by an insertion of a plug connector having a different standard. The receptacle connector may include: a receptacle shell; a contact pin coupling part into which a contact pin of a plug connector is inserted; and a plug shell coupling part providing an insertion space for a plug shell of the plug connector, between the receptacle shell and the contact pin coupling part. The plug shell coupling part may include: a fixed part fixed to the receptacle shell; and extension parts. A part of the extension parts may be first extension parts, the other part of the extension parts may be second extension parts, and distal end parts of the first and second extension parts may be extended on a plane perpendicular to the central axis of the fixed part, while being separated from each other.

Abstract: A method for manufacturing a flexible printed circuit board includes preliminarily thermally deforming s substrate through heating, forming a circuit pattern with a conductive paste on the preliminarily thermally deformed substrate, and firing the circuit pattern. A flexible printed circuit board includes a substrate, and a circuit pattern formed by firing a conductive paste on a first surface of the substrate. The substrate is preliminarily thermally deformed and, thus, a shrinkage variation thereof before and after firing the conductive paste is zero. Dimensional stability when firing the circuit pattern printed with the conductive paste can be ensured, deterioration of adhesion between the circuit pattern and the substrate attributable to film deformation upon firing can be prevented, and stable adhesion of the circuit pattern can be maintained even after firing.

Abstract: A flexible display device including; a base film; a display sheet formed over the base film; and a structural pattern formed below the base film for moving a neutral plane with respect to a bending stress applied to the display sheet to a layer having relatively low rupture point among the layers consisting of the display sheet. The neutral plane is moved to a layer having a relative low rupture point in a flexible display device by forming the structural patterns so that the bending stress applying to the layer having a relative low rupture point can be minimized.

Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter.

Abstract: A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.

Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.