Abstract: A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.

Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.

Abstract: A light-emitting diode (LED) package includes: a reflective structure including a cavity, a bottom portion having a through hole, and a sidewall portion surrounding the cavity and the bottom portion and having an inclined inner side surface; an electrode pad inserted into the through hole; an LED on the bottom portion in the cavity, the LED including a light-emitting structure electrically connected to the electrode pad and a phosphor formed on the light-emitting structure; and a lens structure filling the cavity and formed on the reflective structure.

Abstract: Disclosed herein is a method of manufacturing a micro-supercapacitor with an increased storage capacity of electrical energy. The method is a method of manufacturing a high-capacity micro-supercapacitor including an anode and a cathode separated from each other, which includes forming a pair of current collectors by discharging conductive ink on a substrate surface with a 3D printer, and forming an electrode consisting of an anode and a cathode by stacking an electrode constituting material in the form of a plurality of layers on each of the pair of current collectors using the 3D printer.

Abstract: A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.

Abstract: A receptacle connector capable of preventing a damage caused by an insertion of a plug connector having a different standard. The receptacle connector may include: a receptacle shell; a contact pin coupling part into which a contact pin of a plug connector is inserted; and a plug shell coupling part providing an insertion space for a plug shell of the plug connector, between the receptacle shell and the contact pin coupling part. The plug shell coupling part may include: a fixed part fixed to the receptacle shell; and extension parts. A part of the extension parts may be first extension parts, the other part of the extension parts may be second extension parts, and distal end parts of the first and second extension parts may be extended on a plane perpendicular to the central axis of the fixed part, while being separated from each other.

Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.

Abstract: A light emitting diode display device is provided.

Abstract: Provided are a solid composite formulation for oral administration, the solid composite formulation including: an ezetimibe granules-part including ezetimibe, said ezetimibe having a particle size distribution wherein the average particle size d(0.9) for the bottom 90% is about 10 ?m or less; and a rosuvastatin mixture-part including rosuvastatin or a pharmaceutically acceptable salt thereof, and a method of preparing the composite formulation.

Abstract: A light emitting diode display device includes a display board comprising a plurality of unit pixels, a drive circuit board including a plurality of drive circuit regions corresponding to the plurality of unit pixels, and a plurality of bumps interposed between the plurality of unit pixels and the plurality of drive circuit regions. The plurality of unit pixels comprises a first unit pixel including a first P electrode. The plurality of drive circuit regions comprises a first drive circuit region corresponding to the first unit pixel and a first pad connected to a first drive transistor, the plurality of bumps includes a first solder in contact with the first pad, and a first bump on the first solder and including a first filler in contact with the first P electrode, the first solder includes at least one of tin and silver, and the first filler includes copper or nickel.

Abstract: A semiconductor light emitting device includes a wiring board including a mounting surface on which a first wiring electrode and a second wiring electrode are disposed; a semiconductor light emitting diode (LED) chip including a first surface on which a first electrode and a second electrode are disposed, the first surface facing the mounting surface, the semiconductor LED chip further including a second surface positioned opposite to the first surface, and side surfaces positioned between the first and second surfaces, the first and second electrodes being connected to the first and second wiring electrodes, respectively; and a reflective layer disposed on at least one of the second surface and the side surfaces of the semiconductor LED chip.

Abstract: A light-emitting diode (LED) device includes a plurality of light-emitting structures spaced apart from each other; a plurality of electrode layers on first surfaces of the plurality of light-emitting structures, respectively; a protection layer on second surfaces of each of the plurality of light-emitting structures, respectively; a separation layer to electrically insulate the plurality of light-emitting structures from each other and electrically insulate the plurality of electrode layers from each other; a plurality of phosphor layers on second surfaces of the plurality of light-emitting structures, respectively, each of the plurality of the phosphor layers each to output a different color of light; and a partitioning layer between the phosphor layers and separating the plurality of phosphor layers from each other, the partitioning layer including a substrate structure, an insulation structure, or a metal structure.

Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter.

Abstract: Disclosed is a pharmaceutical formulation containing esomeprazole or a pharmaceutically acceptable salt thereof. The pharmaceutical formulation, based on considerably improved pH-dependent drug release characteristics, starts to release the esomeprazole or a pharmaceutically acceptable salt thereof at a target delay time after oral administration, continues the release for a predetermined time, and finishes the release after a predetermined time, thereby providing excellent patient convenience and excellent therapeutic effects, as compared to conventional other formulations.

Abstract: A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.

Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.

Abstract: A semiconductor light emitting device includes a first light emitting portion including a first semiconductor stack, as well as a first lower dispersion Bragg reflector (DBR) layer and a first upper dispersion Bragg reflector (DBR) layer, disposed above and below the first semiconductor stack, a second light emitting portion including a second semiconductor stack, as well as a second lower dispersion Bragg reflector (DBR) layer and a second upper dispersion Bragg reflector (DBR) layer, disposed above and below the second semiconductor stack, a third light emitting portion including a third semiconductor stack, as well as a third lower dispersion Bragg reflector (DBR) layer and a third upper dispersion Bragg reflector (DBR) layer, disposed above and below the third semiconductor stack, a first bonding layer disposed between the first light emitting portion and the second light emitting portion, and a second bonding layer disposed between the second light emitting portion and the third light emitting portion.

Abstract: A light emitting device package includes a first wavelength conversion portion and a second wavelength conversion portion to provide a wavelength of incident light to provide light having a converted wavelength, a light-transmissive partition structure extending along side surfaces of the first and second wavelength conversion portions along a thickness direction to separate the first and second wavelength conversion portions part from each other along a direction crossing the thickness direction, and a cell array including a first light emitting device, a second light emitting device and a third light emitting device, overlapping the first wavelength conversion portion, the second wavelength conversion portion and the light-transmissive partition structure, respectively, along the thickness direction.

Abstract: A light emitting device package comprises a light emitting cell array including a first light emitting cell, a second light emitting cell, and a third light emitting cell, and including a first surface, and a second surface, disposed to oppose the first surface; a plurality of metal pillars disposed on the first surface of the light emitting cell array and electrically connected to the first light emitting cell, the second light emitting cell, and the third light emitting cell; and a molding portion encapsulating the light emitting cell array and the plurality of metal pillars, wherein the plurality of metal pillars include a conductive layer and a bonding layer disposed below the conductive layer, and an interface between the bonding layer and the conductive layer is higher than a lower surface of the molding portion.

Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.